KR101476463B1 - 스케일러블 메모리 시스템 - Google Patents

스케일러블 메모리 시스템 Download PDF

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Publication number
KR101476463B1
KR101476463B1 KR1020097005767A KR20097005767A KR101476463B1 KR 101476463 B1 KR101476463 B1 KR 101476463B1 KR 1020097005767 A KR1020097005767 A KR 1020097005767A KR 20097005767 A KR20097005767 A KR 20097005767A KR 101476463 B1 KR101476463 B1 KR 101476463B1
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KR
South Korea
Prior art keywords
memory
memory device
data
packet
instruction
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020097005767A
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English (en)
Korean (ko)
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KR20090045366A (ko
Inventor
진기 김
학준 오
홍범 편
스티븐 프르지빌스키
Original Assignee
컨버전트 인텔렉츄얼 프로퍼티 매니지먼트 인코포레이티드
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Publication date
Priority claimed from US11/840,692 external-priority patent/US7904639B2/en
Application filed by 컨버전트 인텔렉츄얼 프로퍼티 매니지먼트 인코포레이티드 filed Critical 컨버전트 인텔렉츄얼 프로퍼티 매니지먼트 인코포레이티드
Publication of KR20090045366A publication Critical patent/KR20090045366A/ko
Application granted granted Critical
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1042—Read-write modes for single port memories, i.e. having either a random port or a serial port using interleaving techniques, i.e. read-write of one part of the memory while preparing another part
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
KR1020097005767A 2006-08-22 2007-08-22 스케일러블 메모리 시스템 Expired - Fee Related KR101476463B1 (ko)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US83932906P 2006-08-22 2006-08-22
US60/839,329 2006-08-22
US86877306P 2006-12-06 2006-12-06
US60/868,773 2006-12-06
US90200307P 2007-02-16 2007-02-16
US60/902,003 2007-02-16
US89270507P 2007-03-02 2007-03-02
US60/892,705 2007-03-02
US11/840,692 2007-08-17
US11/840,692 US7904639B2 (en) 2006-08-22 2007-08-17 Modular command structure for memory and memory system

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020127021608A Division KR101476515B1 (ko) 2006-08-22 2007-08-22 스케일러블 메모리 시스템

Publications (2)

Publication Number Publication Date
KR20090045366A KR20090045366A (ko) 2009-05-07
KR101476463B1 true KR101476463B1 (ko) 2014-12-24

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KR1020097005767A Expired - Fee Related KR101476463B1 (ko) 2006-08-22 2007-08-22 스케일러블 메모리 시스템
KR1020127021608A Expired - Fee Related KR101476515B1 (ko) 2006-08-22 2007-08-22 스케일러블 메모리 시스템

Family Applications After (1)

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Country Status (7)

Country Link
EP (1) EP2062261A4 (enrdf_load_stackoverflow)
JP (2) JP5575474B2 (enrdf_load_stackoverflow)
KR (2) KR101476463B1 (enrdf_load_stackoverflow)
CN (2) CN101506895B (enrdf_load_stackoverflow)
CA (1) CA2659828A1 (enrdf_load_stackoverflow)
TW (1) TWI437577B (enrdf_load_stackoverflow)
WO (1) WO2008022454A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
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US11995343B2 (en) 2021-12-07 2024-05-28 SK Hynix Inc. Storage device and operating method thereof

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US8467486B2 (en) 2007-12-14 2013-06-18 Mosaid Technologies Incorporated Memory controller with flexible data alignment to clock
US8781053B2 (en) 2007-12-14 2014-07-15 Conversant Intellectual Property Management Incorporated Clock reproducing and timing method in a system having a plurality of devices
WO2010037205A1 (en) * 2008-09-30 2010-04-08 Mosaid Technologies Incorporated Serial-connected memory system with output delay adjustment
US7957173B2 (en) * 2008-10-14 2011-06-07 Mosaid Technologies Incorporated Composite memory having a bridging device for connecting discrete memory devices to a system
WO2010069045A1 (en) * 2008-12-18 2010-06-24 Mosaid Technologies Incorporated Error detection method and a system including one or more memory devices
US20110002169A1 (en) 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
US20110258366A1 (en) * 2010-04-19 2011-10-20 Mosaid Technologies Incorporated Status indication in a system having a plurality of memory devices
WO2011134051A1 (en) * 2010-04-26 2011-11-03 Mosaid Technologies Incorporated Serially connected memory having subdivided data interface
US8856482B2 (en) * 2011-03-11 2014-10-07 Micron Technology, Inc. Systems, devices, memory controllers, and methods for memory initialization
US9239806B2 (en) * 2011-03-11 2016-01-19 Micron Technology, Inc. Systems, devices, memory controllers, and methods for controlling memory
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
CN102508797B (zh) * 2011-10-27 2015-02-11 忆正存储技术（武汉）有限公司 闪存控制扩展模块、控制器、存储系统及其数据传输方法
TWI581267B (zh) * 2011-11-02 2017-05-01 諾瓦晶片加拿大公司 快閃記憶體模組及記憶體子系統
US8825967B2 (en) 2011-12-08 2014-09-02 Conversant Intellectual Property Management Inc. Independent write and read control in serially-connected devices
US8966151B2 (en) * 2012-03-30 2015-02-24 Spansion Llc Apparatus and method for a reduced pin count (RPC) memory bus interface including a read data strobe signal
US9760149B2 (en) 2013-01-08 2017-09-12 Qualcomm Incorporated Enhanced dynamic memory management with intelligent current/power consumption minimization
KR20150110918A (ko) 2014-03-21 2015-10-05 에스케이하이닉스 주식회사 반도체 메모리 장치
US9792227B2 (en) * 2014-08-19 2017-10-17 Samsung Electronics Co., Ltd. Heterogeneous unified memory
JP6453718B2 (ja) * 2015-06-12 2019-01-16 東芝メモリ株式会社 半導体記憶装置及びメモリシステム
KR102296740B1 (ko) * 2015-09-16 2021-09-01 삼성전자 주식회사 메모리 장치 및 그것을 포함하는 메모리 시스템
FR3041806B1 (fr) * 2015-09-25 2017-10-20 Stmicroelectronics Rousset Dispositif de memoire non volatile, par exemple du type eeprom, ayant une capacite memoire importante, par exemple 16mbits
KR102457820B1 (ko) 2016-03-02 2022-10-24 한국전자통신연구원 메모리 인터페이스 장치
KR102532528B1 (ko) * 2016-04-07 2023-05-17 에스케이하이닉스 주식회사 메모리 장치 및 이의 동작 방법
KR102731614B1 (ko) * 2016-08-26 2024-11-21 삼성전자주식회사 시리얼 통신으로 메모리를 제공하기 위한 장치 및 방법
KR102669694B1 (ko) * 2016-09-28 2024-05-28 삼성전자주식회사 서로 직렬로 연결된 스토리지 장치들 중 애플리케이션 프로세서에 직접 연결되지 않는 스토리지 장치를 리셋시키는 전자 기기 및 그것의 동작 방법
KR102514717B1 (ko) * 2016-10-24 2023-03-27 삼성전자주식회사 메모리 컨트롤러 및 이를 포함하는 메모리 시스템
KR102336666B1 (ko) * 2017-09-15 2021-12-07 삼성전자 주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
KR20190112546A (ko) * 2018-03-26 2019-10-07 에스케이하이닉스 주식회사 메모리 시스템 및 그것의 동작 방법
US10372330B1 (en) * 2018-06-28 2019-08-06 Micron Technology, Inc. Apparatuses and methods for configurable memory array bank architectures
US11043488B2 (en) * 2019-01-24 2021-06-22 Western Digital Technologies, Inc. High voltage protection for high-speed data interface
KR102708771B1 (ko) 2020-05-25 2024-09-20 삼성전자주식회사 디스플레이 구동 장치 및 디스플레이 구동 장치를 포함하는 디스플레이 장치
JPWO2023089778A1 (enrdf_load_stackoverflow) * 2021-11-19 2023-05-25

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US20060031593A1 (en) * 2004-08-09 2006-02-09 Sinclair Alan W Ring bus structure and its use in flash memory systems

Cited By (2)

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Publication number Priority date Publication date Assignee Title
US11995343B2 (en) 2021-12-07 2024-05-28 SK Hynix Inc. Storage device and operating method thereof
US12386547B2 (en) 2021-12-07 2025-08-12 SK Hynix Inc. Storage device and operating method for supporting high-speed input/output thereof

Also Published As

Publication number Publication date
EP2062261A4 (en) 2010-01-06
JP2012226786A (ja) 2012-11-15
EP2062261A1 (en) 2009-05-27
CN101506895B (zh) 2012-06-27
CN101506895A (zh) 2009-08-12
KR101476515B1 (ko) 2014-12-24
TW200828338A (en) 2008-07-01
JP2010501916A (ja) 2010-01-21
KR20090045366A (ko) 2009-05-07
JP5575474B2 (ja) 2014-08-20
KR20120110157A (ko) 2012-10-09
TWI437577B (zh) 2014-05-11
CA2659828A1 (en) 2008-02-28
CN102760476A (zh) 2012-10-31
WO2008022454A1 (en) 2008-02-28

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