KR101476442B1 - Organic Light Emitting Display - Google Patents

Abstract

The present invention provides a semiconductor device comprising: a substrate; A transistor portion including an active layer, a gate, a source, and a drain located on the substrate; A first electrode located on the transistor portion and connected to a source or a drain; An opaque bank layer located on the transistor portion and having an opening that covers at least the active layer and exposes a portion of the first electrode; A light emitting layer disposed on the first electrode exposed through the opening; And a second electrode disposed on the light emitting layer.

Organic electroluminescence display, photoreficiency, bank layer

Description

[0001] The present invention relates to an organic light emitting display,

The present invention relates to an organic light emitting display.

An organic electroluminescent device used in an organic electroluminescent display device is a self-luminous device in which a light emitting layer is formed between two electrodes.

An organic electroluminescent device is a device in which electrons and holes are injected into the light emitting layer from an electron injection cathode and an anode, respectively, and excitons, in which injected electrons and holes are combined, And emits light when it is dropped to the ground state.

The organic light emitting display device using the organic electroluminescent device has a top-emission type and a bottom-emission type according to a direction in which light is emitted, and a passive matrix type ) And active matrix (Active Matrix).

The organic electroluminescence display device is formed through a fabrication process in which a deposition process, an etching process, and the like are performed in parallel to form a transistor, a capacitor, and an organic light emitting diode on a substrate.

On the other hand, when the gate included in the transistor of the organic light emitting display device using the conventional top emission type is a bottom gate, the active layer is exposed to external light to generate a display quality due to photo leakage current There was a problem of degradation.

In order to prevent such a problem, the conventional organic electroluminescent display device has a pixel reflector to cover the channel region of the active layer or to form a black matrix (BM). When the channel region of the active layer is covered or the black matrix is separately formed, additional steps are required, and the process steps are complicated, thereby lowering the production yield.

It is an object of the present invention to solve the problems of the background art described above, to prevent photorelay current generated in the active layer of the transistor portion and to improve display quality and production yield of the organic light emitting display.

According to the present invention, there is provided a semiconductor device comprising: a substrate; A transistor portion including an active layer, a gate, a source, and a drain located on the substrate; A first electrode located on the transistor portion and connected to a source or a drain; An opaque bank layer located on the transistor portion and having an opening that covers at least the active layer and exposes a portion of the first electrode; A light emitting layer disposed on the first electrode exposed through the opening; And a second electrode disposed on the light emitting layer.

The opaque bank layer may include a resin having light shielding properties.

The opaque bank layer may have a black-based color.

And a data wiring connected to the source and the drain, the opaque bank layer covering a part of the scan wiring and the data wiring located in the region adjacent to the transistor portion.

The transistor portion includes a gate located on the substrate, a first insulating film located on the gate, an active layer located on the first insulating film, a source and a drain located on the gate insulating film and respectively in contact with the active layer, And a third insulating film which is located on the drain and exposes the source or the drain, and a third insulating film which is located on the second insulating film and exposes the source or the drain.

The transistor portion includes an active layer located on the substrate, a first insulating film located on the active layer, a gate located on the first insulating film, a second insulating film located on the gate, and a second insulating film located on the second insulating film And a fourth insulating film which is located on the third insulating film and exposes the source or the drain and which is located on the source and drain and which exposes the source or the drain, .

And a reflective member located on the transistor portion and located under the first electrode.

The first electrode may be a transparent electrode.

The present invention simplifies the process by replacing the conventional method of forming the black matrix and the bank layer with one layer of the opaque bank layer and prevents the photorelike current generated in the active layer of the transistor portion, Thereby improving the quality and production yield.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic plan view of an organic light emitting display according to an embodiment of the present invention.

As shown in FIG. 1, an organic light emitting display may include a display unit AA on which a plurality of subpixels P are disposed. The plurality of subpixels P located on the substrate 110 are vulnerable to moisture or oxygen.

Thus, the substrate 110 and the sealing substrate 190 can be sealed by providing the sealing substrate 190 and forming the adhesive member SL on the outer substrate 110 of the display portion AA. The plurality of subpixels P may be driven by a driver DRV positioned on the substrate 110 to display an image.

The driving unit DRV can generate a scan signal, a data signal, and the like corresponding to various signals supplied from the outside, and can supply the generated signals to the display unit AA.

The driving unit DRV may include a scan driver for supplying the scan signals to the plurality of subpixels P and a data driver for supplying the data signals to the plurality of subpixels P. [ The scan driver and the data driver may be separately disposed outside the substrate 110 or the substrate 110. The scan driver and the data driver may be formed on the same substrate, have.

Hereinafter, the connection relationship of the subpixels will be described in more detail through an exemplary circuit configuration of the subpixel P. FIG.

FIG. 2 is a diagram illustrating a circuit configuration of the subpixel shown in FIG. 1. FIG.

2, the subpixel may include a switching transistor S1 whose gate is connected to the scan line SCAN, one end is connected to the data line DATA and the other end is connected to the first node A have. The organic light emitting diode D may include a first power supply line VDD connected to the first electrode and a second node B connected to the second electrode. The driving transistor T1 may include a gate connected to the first node A, a first end connected to the second electrode of the organic light emitting diode D, and a second end connected to the second node B. And may include a capacitor Cst having one end connected to the first node A and the other end connected to the second node B and the second power supply line VSS.

In the circuit configuration of the sub-pixel described above, the transistors S1 and T1 may be N-type transistors as shown, but are not limited thereto.

The power supply voltage supplied through the first power supply line VDD may be higher than the ground voltage supplied through the second power supply line VSS and may be supplied through the first power supply line VDD and the second power supply line VSS The voltage level can be switched according to the driving method.

In the above-described sub-pixel, the switching transistor S1 may be turned on when a scan signal is supplied through the scan line SCAN. Next, when the data signal supplied through the data line DATA is supplied to the first node A through the turned-on switching transistor S1, the capacitor Cst can store the data signal as a data voltage. Next, when the scan signal is cut off and the switching transistor S1 is turned off, the driving transistor T1 can be driven in response to the data voltage stored in the capacitor Cst. Next, the power supply voltage supplied through the first power supply line VDD flows through the second power supply line VSS, and the organic light emitting diode D can emit light. However, the present invention is not limited to such an example.

Hereinafter, the cross-sectional structure of the subpixel P according to an embodiment of the present invention will be described in more detail.

3 is a cross-sectional exemplary view of a subpixel according to an embodiment of the present invention.

The subpixel P includes a transistor portion including a switching transistor, a driving transistor and a capacitor located on a substrate and a first electrode connected to a source or a drain of the driving transistor, And an organic light emitting diode including a light emitting layer and a second electrode disposed on the light emitting layer. Hereinafter, with reference to FIG. 3, each structure will be described in order of being stacked on a substrate.

The buffer layer 105 may be located on the substrate 110. The buffer layer 105 may use to form to protect the transistor to be formed in a subsequent process from impurities, a silicon oxide (SiO _2), silicon nitride (SiNx), etc., such as alkali ions leaked from the substrate 110, optionally .

Here, the substrate 110 may be glass, plastic, metal, or the like.

Gates 106 and 107 can be located on the buffer layer 105. [ The gates 106 and 107 are formed from a group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) And may be made of any one selected or an alloy thereof. The gates 106 and 107 are made of a metal such as molybdenum (Mo), aluminum (Al), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) And may be a multilayer composed of any one or an alloy thereof. In addition, the gates 106 and 107 can be a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

Here, the gate "106" may be the gate of the driving transistor and the gate "107" may be the scanning wiring connected to the gate of the switching transistor. Each of the two gates 106 and 107 located on the substrate 110 is formed as a double layer structure having first gates 106a and 107a and second gates 106b and 107b.

The first insulating layer 115 may be located on the gates 106 and 107. The first insulating layer 115 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto. On the other hand, the lower electrodes of the capacitors may be located on the same layer as the gates 106 and 107.

The active layer 120 and the data line 125 may be disposed on the first insulating layer 115. The active layer 120 may include amorphous silicon, crystallized polycrystalline silicon, or the like. The active layer 120 may include a source region and a drain region including p-type or n-type impurities, and may include a channel region other than the source region and the drain region.

A source 121 and a drain 122 may be positioned in a source region and a drain region of the active layer 120, respectively. When the source 121 and the drain 122 are a single layer, the source 121 and the drain 122 may be formed of Mo, Al, Cr, (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). When the source 121 and the drain 122 are multi-layered, they may be formed of a triple layer of molybdenum / aluminum-neodymium, molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum.

Here, not only the data line 125 but also the capacitor upper electrode and the power supply line may be located on the same layer as the source 121 and the drain 122. The power wiring including the data wiring 125 may be a single layer or a multilayer and may be made of molybdenum (Mo), aluminum (Al), chromium (Cr), or the like when the power wiring including the data wiring 125 is a single layer. , Gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). When the power line including the data line 125 is a multilayer, it may be a triple layer of molybdenum / aluminum-neodymium, molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum. In addition, the power supply wiring including the data wiring 125 may be formed of a triple layer of molybdenum / aluminum-neodymium / molybdenum.

The second insulating layer 130 exposing the source 121 or the drain 122 may be located on the first insulating layer 115 including the source 121 and the drain 122. The second insulating layer 130 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

A third insulating layer 140 exposing the source 121 or the drain 122 may be formed on the second insulating layer 130. The third insulating layer 140 may be formed to reduce steps of the lower structure. The third insulating layer 140 may be formed by a spin coating method in which an organic material such as polyimide, benzocyclobutene series resin, or acrylate is coated in a liquid form and then cured Or an inorganic material such as silicon oxide or silicon nitride may be formed by a silicate on glass (SOG) method. Alternatively, the third insulating layer 140 may be a passivation layer and may be a silicon nitride layer (SiNx), a silicon oxide layer (SiOx), or a multilayer thereof.

A first electrode 160 electrically connected to the source 121 or the drain 122 may be disposed on the third insulating layer 140. Here, the first electrode 160 may be an anode, and may be a transparent electrode or a reflective electrode. Here, the first electrode 160 may be a transparent electrode when the structure of the organic light emitting display device is a back surface or a double-sided light emission, and may be any one of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide) It can be one.

In addition, when the structure of the organic light emitting display device is a front emission type, a reflective member 150 may be further formed under the first electrode 160. The reflective member 150 may be made of any one of aluminum (Al), silver (Ag), and nickel (Ni), but is not limited thereto.

An opaque bank layer 145 may be positioned on the first electrode 160 to isolate adjacent first electrodes and have openings to expose a portion of the first electrode 160. The opaque bank layer 145 may be a resin having a light shielding property and a resin in which a light shielding material is colored, but is not limited thereto. The opaque bank layer 145 may have a black color in order to enhance the light shielding property, but is not limited thereto. However, since the purpose of using the opaque bank layer 145 is to prevent the electric field from concentrating on the edge of the electrode included in the organic light emitting diode, the resin used for the opaque bank layer 145 is not conductive, It is advantageous to use a material that is flat and does not cause a material (e.g., outgasing) that adversely affects the light emitting layer 170.

Here, as the material constituting the opaque bank layer 145, for example, carbon which can give a black color series can be selected as the light-shielding material. The resin may be a photopolymerizable compound which undergoes irradiation with light such as ultraviolet rays to polymerize and cure to thereby select a compound having an ethylenic double bond.

When the opaque bank layer 145 is formed as described above, the problem of exposure of the active layer 120 of the transistor unit located below by the external light can be prevented, thereby preventing photoraky current generation. Accordingly, it is possible to prevent the problem of screen whitening on the panel, thereby improving the contrast ratio of the screen. The opaque bank layer 145 may cover a part of the scan wiring 111 and the data wiring 125 located in the region adjacent to the transistor portion so that external light is transmitted through the scan wiring 111 and the data wiring 125 The problem can also be avoided.

The light emitting layer 170 may be positioned on the first electrode 160 exposed by the opening of the opaque bank layer 145.

The second electrode 180 may be positioned on the light emitting layer 170. The second electrode 180 may be a cathode electrode and may be made of magnesium (Mg), calcium (Ca), aluminum (Al), silver (Ag), or an alloy thereof having a low work function.

Here, the second electrode 180 may be formed to be thin enough to transmit light when the organic electroluminescent display device has a front or both-side light emitting structure, and when the organic electroluminescent display device has a back light emitting structure, It can be formed thick enough to reflect light.

In the above description, the gate included in the transistor portion is a bottom gate type in which the transistor is located at the bottom. Alternatively, the transistor portion may include a first insulating film located on the active layer and an active layer located on the substrate, a gate located on the first insulating film, a second insulating film located on the gate, and a second insulating film located on the second insulating film, And a fourth insulating layer which is located on the source and the drain and exposes the source or the drain and the fourth insulating layer which is located on the third insulating layer and exposes the source or the drain, It may be type.

Such an organic light emitting display device may have various methods in implementing a color image, and an implementation method thereof will be described with reference to FIGS. 4 to 6. FIG.

4 to 6 are views illustrating embodiments of implementing a color image in an organic light emitting display according to an embodiment of the present invention.

The color image forming method shown in FIG. 4 is a color image forming method using an organic light emitting display device including a red light emitting layer 170R, a green light emitting layer 170G, and a blue light emitting layer 170B separately emitting red light, green light, and blue light, And shows an image implementation method.

As shown in FIG. 4, red light, green light, and blue light are provided from the respective light emitting layers 170R, 170G, and 170B, respectively, so that red light, green light, and blue light are mixed to display a color image.

Here, an electron transport layer (ETL), a hole transport layer (HTL), and the like may be further included at the top and bottom of each of the emission layers 170R, 170G, and 170B, and various arrangements and arrangements thereof are possible.

The color image realization method shown in Fig. 5 is a method in which the white light emitting layer 270W and the organic electroluminescent light emitting element 270 including the red color filter 290R, the green color filter 290G, the blue color filter 290B, And shows a color image implementation method of the display device.

5, white light provided from the white light emitting layer 270W is transmitted through the red color filter 290R, the green color filter 290G, the blue color filter 290B, and the white color filter 290W, respectively , And red light / green light / blue light / white light are generated and mixed, respectively, so that a color image can be displayed. Here, the color filter of the white color filter 290W may be configured or removed as described above in accordance with the color combination of the white light provided in the white light emission layer 270W and the combination of the white light with the red light / green light / blue light.

In FIG. 5, four color subpixels according to a combination of red light, green light, blue light, and white light are shown. However, three subpixels may be used depending on the combination of red light / green light / have.

Here, the upper and lower portions of each white light emitting layer 270W may further include an electron transport layer (ETL), a hole transport layer (HTL), and the like, and the arrangement and structure thereof may be variously modified.

6 may include a blue light emitting layer 370B, a color changing medium 390R, a color changing medium 390G, a color changing medium 390G, medium 370B of the organic light emitting display according to an embodiment of the present invention.

6, the blue light provided from the blue light emitting layer 370B is converted into a red color conversion medium 390R, a green color conversion medium 390G, a blue color conversion medium color changing medium 370B, respectively, and red light / green light / blue light are generated and mixed, respectively, so that a color image can be displayed.

Here, the blue color conversion medium 370B may be constituted or removed as described above according to the combination of the color of blue light provided by the blue light emitting layer 370B and the color of blue light formed by red light / green light.

Here, an electron transport layer (ETL), a hole transport layer (HTL), and the like may be further included on the upper and lower sides of the blue light emitting layer 370B, and various arrangements and arrangements thereof are possible.

4 to 6, the bottom emission structure has been shown and described. However, the present invention is not limited thereto.

In addition, although two types of driving methods have been shown and described with respect to the color image realizing method, the present invention is not limited thereto, and various modifications are possible as needed.

Hereinafter, the structure of the organic light emitting diode according to one embodiment of the present invention will be described.

7 is a hierarchical structure diagram of an organic light emitting diode according to an embodiment of the present invention.

7, the organic light emitting diode according to an exemplary embodiment of the present invention includes a first electrode 160, a hole injection layer 171, a hole transport layer 172, A light emitting layer 170, an electron transport layer 173, an electron injection layer 174 and a second electrode 180 located on the electron injection layer 174. [

A hole injection layer 171 is disposed on the first electrode 160. The hole injection layer 171 may function to smoothly inject holes from the first electrode 160 into the light emitting layer 170. The hole injection layer 171 may be formed of cupper phthalocyanine (CuPc), poly (3,4) -ethylenedioxythiophene (PEDOT) But is not limited to, at least one selected from the group consisting of PANI (polyaniline) and NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine).

The above-described hole injection layer 171 can be formed by an evaporation method or a spin coating method.

The hole transport layer 172 plays a role of facilitating the transport of holes and may be formed by using NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'- , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-tris (N-3-methylphenyl-N-phenylamino) But is not limited thereto.

The hole transport layer 172 can be formed by evaporation or spin coating. The light emitting layer 170 described above may be formed of a material that emits red, green, blue, and white light, and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 170 is red, it includes a host material containing carbazole biphenyl (CBP) or mCP (1,3-bis (carbazol-9-yl) wherein the dopant comprises at least one selected from the group consisting of iridium, iridium, PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) Or PBD: Eu (DBM) 3 (Phen) or Perylene. However, the present invention is not limited thereto.

When the light emitting layer 170 is green, it may be made of a phosphorescent material including a dopant material including a host material including CBP or mCP and containing Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium) Alternatively, it may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 170 is blue, it may include a phosphorescent material including a dopant material including (4,6-F2ppy) 2Irpic including a host material including CBP or mCP.

Alternatively, the fluorescent material may include any one selected from the group consisting of spiro-DPVBi, spiro-6P, distyrylbenzene (DSB), distyrylarylene (DSA), PFO polymer, and PPV polymer. It is not limited.

Here, the electron transport layer 173 serves to smooth the transport of electrons, and may be any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq and SAlq But is not limited thereto.

The electron transporting layer 173 can be formed by an evaporation method or a spin coating method. The electron transport layer 173 may also prevent holes injected from the first electrode from passing through the light emitting layer to the second electrode. That is, it may serve as a hole blocking layer and may serve to efficiently combine holes and electrons in the light emitting layer.

Here, the electron injection layer 174 serves to smooth the injection of electrons, and may use Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq .

The electron injection layer 174 may be formed by vacuum evaporation of organic and inorganic materials forming the electron injection layer.

Here, the hole injection layer 171 or the electron injection layer 174 may further include an inorganic material, and the inorganic material may further include a metal compound. The metal compound may include an alkali metal or an alkaline earth metal. Metal compound including an alkali metal or alkaline earth metal LiQ, LiF, NaF, KF, RbF, CsF, FrF, BeF 2, MgF 2, CaF 2, SrF 2, BaF any one selected from the group consisting of ₂ and RaF ₂ or more But is not limited thereto.

That is, the inorganic material in the electron injection layer 174 facilitates hopping of electrons injected from the second electrode 180 into the light emitting layer 170, thereby balancing the holes and electrons injected into the light emitting layer, Can be improved.

The inorganic material in the hole injection layer 171 reduces the mobility of holes injected from the first electrode 160 into the light emitting layer 170 so as to balance the holes and electrons injected into the light emitting layer 170, .

Here, the present invention is not limited to FIG. 4, and at least one of the electron injection layer 174, the electron transport layer 173, the hole transport layer 172, and the hole injection layer 171 may be omitted.

In one embodiment of the present invention, the conventional method of forming the black matrix and the bank layer may be replaced by one layer of the opaque bank layer, thereby preventing the photorelay current without additional process (or additional layer) and forming the bank layer There is an effect. Accordingly, it is not necessary to add a separate process to form a black matrix, thereby simplifying the process and improving the display quality and the production yield.

In addition, one embodiment of the present invention can cover a part of the scan wiring and the data wiring connected to the transistor portion, thereby reducing the reflectivity of the metal wiring. In particular, an embodiment of the present invention is effective for a flexible organic light emitting display device in which an organic bank layer must be used.

Therefore, one embodiment of the present invention is to prevent the photorelay current occurring in the active layer of the transistor portion and to improve the display quality and the production yield of the organic light emitting display device.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. It is therefore to be understood that the embodiments described above are to be considered in all respects only as illustrative and not restrictive. In addition, the scope of the present invention is indicated by the following claims rather than the detailed description. Also, all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

1 is a schematic plan view of an organic light emitting display according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating an exemplary circuit configuration of the subpixel shown in FIG. 1; FIG.

3 is a cross-sectional exemplary view of a subpixel according to an embodiment of the present invention.

FIGS. 4 to 6 illustrate embodiments of implementing a color image in an organic light emitting display according to an exemplary embodiment of the present invention. FIG.

7 is a hierarchical structure view of an organic light emitting diode according to an embodiment of the present invention.

DESCRIPTION OF THE REFERENCE NUMERALS

110: substrate 105: buffer layer

115: first insulating layer 120: active layer

130: second insulating film 140: third insulating film

145: opaque bank layer 150: reflective member

160: first electrode 170: light emitting layer

180: second electrode 190: sealing substrate

Claims (8)

Board; A transistor portion including an active layer, a gate, a source, and a drain located on the substrate; A first electrode located on the transistor portion and connected to the source or the drain; An opaque bank layer located on the transistor portion and having an opening that covers at least the active layer and exposes a portion of the first electrode; A light emitting layer disposed on the first electrode exposed through the opening; And And a second electrode located on the light emitting layer, The transistor portion includes a gate located on the substrate, a first insulating layer located on the gate, the active layer located on the first insulating layer, and a second insulating layer located on the first insulating layer, A second insulating film which is located on the source and the drain and which exposes the source or the drain and a third insulating film which is located on the second insulating film and exposes the source or the drain, / RTI > Wherein the opaque bank layer covers a part of the scan wiring and the data wiring located in the region adjacent to the transistor unit. The method according to claim 1, Wherein the opaque bank layer comprises: An organic electroluminescent display device comprising a resin having light shielding properties. The method according to claim 1, Wherein the opaque bank layer comprises: Wherein the organic light emitting display device has a black color. delete delete Board; A transistor portion including an active layer, a gate, a source, and a drain located on the substrate; A first electrode located on the transistor portion and connected to the source or the drain; An opaque bank layer located on the transistor portion and having an opening that covers at least the active layer and exposes a portion of the first electrode; A light emitting layer disposed on the first electrode exposed through the opening; And a second electrode located on the light emitting layer, The transistor unit includes the active layer located on the substrate, a first insulating film located on the active layer, the gate located on the first insulating film, a second insulating film located on the gate, A third insulating film located on the second insulating film and in contact with the active layer, the third insulating film being located on the source and the drain and exposing the source or the drain; And a fourth insulating film exposing the source or the drain, Wherein the opaque bank layer covers a part of the scan wiring and the data wiring located in the region adjacent to the transistor unit. 7. The method according to claim 1 or 6, And a reflective member located on the transistor portion and located under the first electrode. delete

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