KR102438632B1 - display device and method of fabricating display device - Google Patents

Abstract

The present invention relates to a display device and a method for manufacturing a display device, and in particular, a light shielding film in which a core made of a metallic material or a magnetic and diamagnetic material is surrounded by a black shell and forms a light shielding pattern in which a plurality of light shielding film particles are aggregated inside a binder. It relates to a display device and a method of manufacturing the display device.
A feature of the present invention is that a plurality of light-shielding film particles in which a core made of a metallic material or a magnetic and diamagnetic material is surrounded by a black shell are aggregated inside the binder to form a pattern shape through a self-patterning method. do it with
The light-shielding film particles according to the embodiment of the present invention can easily implement a pattern shape through a self-patterning method through a core made of a metal material while having light-shielding properties by a black shell, and can implement a pattern shape with a fine line width. have.
In addition, since the shell has characteristics of high heat resistance and high resistance, excellent light blocking performance can be implemented. Also, since the binder itself has high heat resistance characteristics, as these light blocking film particles are dispersed and located inside the binder, light blocking film particles A binder comprising

Description

A display device and a method of manufacturing a display device {display device and method of fabricating display device}

The present invention relates to a display device and a method for manufacturing a display device, and in particular, a light shielding film in which a core made of a metallic material or a magnetic and diamagnetic material is surrounded by a black shell and forms a light shielding pattern in which a plurality of light shielding film particles are aggregated inside a binder. It relates to a display device and a method of manufacturing the display device.

In order to increase the contrast ratio of an image, displays that have recently been spotlighted have a structure in which a black matrix (BM) is formed between each pixel area of red, green, and blue. have.

Carbon black is often used for the light-shielding film, and the carbon black used for the light-shielding film has low light-shielding properties due to poor dispersion. ) has a problem in that manufacturing by the process becomes difficult.

In addition, carbon black is easily oxidized at high temperature and has a characteristic that light-shielding property is lowered, so it is difficult to apply it on an array substrate equipped with a thin film transistor, which necessarily includes a high temperature heat treatment process of 500° C. or more.

In addition, black titanium, which has been proposed as a material for a light-shielding film, is not suitable as a material for a light-shielding film requiring heat resistance because it changes to white titanium oxide at a high temperature of around 350°C.

Accordingly, black titania having excellent heat resistance has been proposed, but it is difficult to apply this as well because it has worse light blocking properties than carbon black.

In particular, as the high resolution increases, the light-shielding film also requires a fine line width. In the case of forming the light-shielding film through the photolithography process, it is very difficult to form the light-shielding film to have a line width of 10 μm or less, and the initial investment cost increases due to expensive exposure equipment. This causes a disadvantage in that the process cost is excessive, such as a high-resolution mask is required.

In addition, every time a pattern is formed, complex processes such as exposure, post-exposure bake, development, post-development bake, etching process, and cleaning process must be performed, which takes a long time and requires repeating multiple photo processes, resulting in productivity. There is a problem of this deterioration.

The present invention is to solve the above problems, and a first object is to provide a light-shielding film having excellent light-shielding performance and heat resistance.

In addition, a second object is to provide a light-shielding film capable of a fine pattern, and a third object is to simplify the light-shielding film forming process.

Through this, the fourth object is to improve the efficiency of the process.

In order to achieve the object as described above, the present invention provides a first substrate including a thin film transistor positioned for each pixel area, a pixel electrode connected to the thin film transistor, a second substrate facing the first substrate, Red (R), green (B), and blue (B) color filters positioned above the first substrate or below the second substrate, and the red (R), green (G), and blue (B) color filters ) and a light-shielding film positioned above or below the color filter, wherein the light-shielding pattern is made of a binder in which a plurality of light-shielding film particles composed of a core made of a metallic material and a black shell are dispersed. And it provides a display device including a transmission pattern made of the binder.

In addition, according to the present invention, a first substrate having a plurality of pixel regions defined by being divided into a light emitting region and a non-emitting region, a first electrode provided for each pixel region, and positioned above the first electrode, A light-blocking pattern defining a plurality of pixel regions, an organic light-emitting layer positioned between the plurality of light-shielding patterns, and a second electrode positioned above the organic light-emitting layer, wherein the light-shielding pattern includes a metal core. and a plurality of light-shielding film particles composed of a black shell.

In addition, the present invention includes a first substrate having a plurality of pixel regions defined thereon, a plurality of light-shielding film particles positioned on the first substrate, and a core made of a metal material surrounded by a black shell. A light-shielding film including a light-shielding pattern made of a dispersed binder and a transmission pattern made of the binder, a buffer layer positioned above the light-shielding film, and a driving thin film transistor positioned above the buffer layer for each pixel region corresponding to the light-shielding pattern; , a display device connected to the driving thin film transistor and including a first electrode provided for each pixel area, an organic light emitting layer positioned above the first electrode, and a second electrode positioned above the organic light emitting layer do.

As described above, according to the present invention, a plurality of light-shielding film particles in which a core made of a metallic material or a magnetic and diamagnetic material is surrounded by a black shell is aggregated inside the binder to form a pattern through a self-patterning method By making , it is possible to easily implement a pattern shape through the self-patterning method, and there is an effect that a pattern shape of a fine line width can be implemented.

In addition, since the shell has characteristics of high heat resistance and high resistance, excellent light-shielding performance can be implemented. Also, since the binder itself has high heat resistance characteristics, the binder including light-shielding film particles has the effect of having higher heat resistance characteristics. have.

1A is a view schematically showing a light-shielding film particle according to an embodiment of the present invention.
FIG. 1B is a transmission electron microscope (TEM) photograph of FIG. 1A.
2A to 2E are cross-sectional views schematically illustrating a self-patterning method using light-shielding film particles according to an embodiment of the present invention.
3A is a scanning electron microscope (SEM) photograph showing a state in which a pattern shape is realized through a self-patterning method of a light-shielding film according to an embodiment of the present invention;
3B is a photograph showing the surface of the light blocking pattern of the light blocking film of FIG. 3A.
Figure 3c is a photograph showing the surface of the transmission pattern of the light-shielding film.
4 is an experimental result of measuring the transmittance of the transmission pattern.
5 is a cross-sectional view schematically illustrating a part of a liquid crystal display according to a first embodiment of the present invention.
6A to 6F are cross-sectional views of a manufacturing step of a second substrate including a color filter layer according to the first embodiment of the present invention.
7 is a cross-sectional view schematically illustrating a cross section of an organic light emitting diode according to a second embodiment of the present invention.
8 is a cross-sectional view schematically showing a cross section of an OLED according to a third embodiment of the present invention.
9 is a cross-sectional view schematically illustrating a cross section of an OLED according to a fourth embodiment of the present invention.

According to the present invention, a first substrate including a thin film transistor positioned for each pixel area, a pixel electrode connected to the thin film transistor, a second substrate facing the first substrate, an upper portion of the first substrate or the second substrate The red (R), green (B), and blue (B) color filters are positioned below the substrate, and the red (R), green (G), and blue (B) color filters are positioned above or below the red (R), green (G), and blue (B) color filters. and a light-shielding film, wherein the light-shielding pattern includes a light-shielding pattern made of a binder in which a plurality of light-shielding film particles composed of a core made of a metallic material and a black shell are dispersed, and a transmission pattern made of the binder display is provided.

In addition, a first substrate having a plurality of pixel regions defined by being divided into a light emitting region and a non-emitting region, respectively, a first electrode provided for each pixel region, and an upper portion of the first electrode, the plurality of pixels A light-blocking pattern defining an area, an organic light-emitting layer positioned between the plurality of light-blocking patterns, and a second electrode positioned above the organic light-emitting layer, wherein the light-shielding pattern includes a core made of a metallic material and a black color A display device having a plurality of light-shielding film particles constituted by a shell is provided.

In addition, a binder in which a plurality of light-shielding film particles are dispersed in a first substrate having a plurality of pixel regions defined thereon, and a plurality of light-shielding film particles positioned on the first substrate and having a core made of a metallic material surrounded by a black shell. A light blocking film including a light blocking pattern made of and a transmission pattern made of the binder, a buffer layer located above the light blocking film, a driving thin film transistor located above the buffer layer for each pixel area corresponding to the light blocking pattern, and the driving Provided is a display device connected to a thin film transistor and including a first electrode provided for each pixel area, an organic light emitting layer positioned above the first electrode, and a second electrode positioned over the organic light emitting layer.

At this time, corresponding to the boundary of the pixel region, a light-shielding barrier rib made of a binder in which the light-shielding film particles composed of the core and the shell are dispersed is positioned, and the organic light-emitting layer is located above the first electrode in the region surrounded by the light-shielding barrier rib. The light blocking pattern is positioned to correspond to the boundary of the pixel area, and the transmission pattern is positioned to correspond to the red (R), green (G), and blue (B) color filters.

and an organic electroluminescent device further comprising: a common electrode spaced apart from the pixel electrode; and a liquid crystal layer between the first substrate and the second substrate, and electrically connected to the pixel electrode; The organic electroluminescent device has a plurality of organic material layers stacked, emits white light, and is positioned between the first substrate and the color filter or between the second substrate and the color filter.

In addition, the core is made of at least one metal material selected from the group consisting of platinum (Pt), palladium (Pd), silver (Ag), copper (Cu) and gold (Au), or cobalt (Co), manganese ( Mn), iron (Fe), nickel (Ni), gadolithium (Gd), molybdenum (Mo), MM' ₂ O ₄ , and MxOy (M and M' are each independently Co, Fe, Ni, Mn, Zn , Gd, or Cr, and is made of at least one magnetic material selected from the group consisting of 0 < x ≤ 3, 0 < y ≤ 5), or at least from the group consisting of CoCu, CoPt, FePt, CoSm, NiFe and NiFeCo. Consists of one selected magnetic alloy, the shell is titanium black (titan black), lactam black (lactam black), CuMnOx, Cu(Cr, Mn)xOy, Cu(Cr, Fe)xOy, (Fe, Mn) ( At least one is selected from the group consisting of Fe, Mn)xOy, and TiNxOy.

In addition, the core has a nanocrystal size of 3 to 10 nm, the light-shielding film particles have a nanocrystal size of 10 to 300 nm, and the binder is at least one selected from the group consisting of siloxane or silsesquioxane. and a thermosetting crosslinking agent.

In this case, the buffer layer is made of a silicon nitride (SiNx) or silicon oxide (SiO2) selected from the inorganic insulating material.

In addition, the present invention comprises the steps of: a) applying a binder including a plurality of light-shielding film particles in which a core made of a metallic material is surrounded by a black shell on a substrate; b) to the back surface of the substrate Positioning a magnetic mask to position the plurality of light-shielding film particles on the substrate corresponding to the upper portion of the magnetic mask, c) removing the magnetic mask, and irradiating ultraviolet rays or heat with a binder containing the light-shielding film particles , aggregating the light-shielding film particles to form a light-shielding film, wherein the light-shielding film includes a light-shielding pattern made of the light-shielding film particles and a transmission pattern made of only the binder.

In this case, before step c), the method includes forming red, green, and blue color filters for each pixel area on the substrate, wherein the light blocking pattern is positioned to correspond to the boundary of the pixel area, and the transmission pattern is It is positioned on the red, green, and blue color filters, and after step c), forming a common electrode on the light blocking layer.

And, before step a), the steps of forming a driving thin film transistor and forming a first electrode connected to the driving thin film transistor, wherein the light blocking pattern is a ratio of a pixel area including an upper portion of the driving thin film transistor It is located corresponding to the light emitting region, and after step c), comprises the step of sequentially forming an organic light emitting layer and a second electrode on the light blocking film, and after the step c), forming a buffer layer on the light blocking film and , forming a driving thin film transistor on the buffer layer to correspond to the light blocking pattern, forming a first electrode connected to the driving thin film transistor, and forming an organic light emitting layer and a second electrode on the first electrode Provided is a method of manufacturing a display device including sequentially forming the display device.

In this case, the method further includes forming a bank on the upper part of the driving thin film transistor, the organic light emitting layer is positioned inside the bank, and the light shielding film particle composed of the core and the shell on the upper part of the driving thin film transistor. The method further includes forming a light-shielding barrier rib, wherein the organic light emitting layer is positioned inside the light-shielding barrier rib.

Hereinafter, an embodiment according to the present invention will be described in detail with reference to the drawings.

FIG. 1A is a view schematically illustrating light-shielding film particles according to an embodiment of the present invention, and FIG. 1B is a transmission electron microscope (TEM) photograph of FIG. 1A .

As shown, the light-shielding film particle 100 according to the embodiment of the present invention is made of a core (core: 110) made of a metal material is wrapped in a black shell (shell: 120).

In this case, the core 110 may be made of a metal material, a magnetic material, or a magnetic alloy, and the metal material is platinum (Pt), palladium (Pd), or silver (Ag). ), copper (Cu) and gold (Au) are preferably selected from the group consisting of.

In addition, as the magnetic material, cobalt (Co), manganese (Mn), iron (Fe), nickel (Ni), gadolithium (Gd), molybdenum (Mo), MM' ₂ O ₄ , and MxOy (M and M' Each independently represents Co, Fe, Ni, Mn, Zn, Gd, or Cr, and is preferably selected from the group consisting of 0 < x ≤ 3, 0 < y ≤ 5).

In addition, the magnetic alloy is preferably selected from the group consisting of CoCu, CoPt, FePt, CoSm, NiFe and NiFeCo.

And, the shell 120 surrounding the core 110 is titanium black (titan black), lactam black (lactam black), CuMnOx, Cu(Cr, Mn)xOy, Cu(Cr, Fe)xOy, (Fe, Mn) It is preferable that one or two or more are selected from the group of (Fe, Mn)xOy and TiNxOy.

Here, the core 110 has a nanocrystal size of 3 to 10 nm, and the overall size of the light blocking film particles 100 has a nanocrystal size of 10 to 300 nm.

The light-shielding film particles 100 are dispersedly positioned inside the binder 130, and the binder 130 is preferably selected from the group of siloxane or silsesquioxane having high resistance and high heat resistance. .

A thermosetting crosslinking agent 140 is contained in the binder 130 .

The thermosetting crosslinking agent 140 may use at least one selected from an epoxy resin, an acrylic polyfunctional monomer, and a melamine resin having properties capable of maintaining a liquid phase at room temperature.

The light-shielding film particles 100 according to this embodiment of the present invention are easily patterned through a self-patterning method through the core 110 made of a metal material while having light-shielding properties by the black shell 120 . A shape can be implemented, and a pattern shape of a fine line width can be implemented.

In addition, since the shell 120 has high heat resistance and high resistance characteristics, excellent light blocking performance can be implemented, and also, since the binder 130 itself has high heat resistance characteristics, these light blocking film particles 100 are used in the binder ( 130) As they are dispersed therein, the binder 130 including the light-shielding film particles 100 also has higher heat resistance characteristics.

Hereinafter, the self-patterning method of the light blocking film particles 100 of the present invention will be described in more detail.

2A to 2E are cross-sectional views schematically illustrating a self-patterning method using light-shielding film particles according to an embodiment of the present invention.

As shown in FIG. 2A , the binder 130 including the light blocking film particles 100 is applied to the upper portion of the substrate 151 .

Here, various coating methods may be used for the process of applying the binder 130 including the light-shielding film particles 100 on the substrate 151 , a spin-coating method, a slit-coating method , a doctor blade method, a spin-slit coating method, a roll to roll coating method, or a cast coating method may be used.

At this time, when the substrate 151 is made of flexible TAC or COP, in order to uniformly apply the binder 130 including the light-shielding film particles 100 on the substrate 151, a slit coating method or a roll-to-roll coating method is used. It is preferable to use

Next, as shown in FIG. 2B , the magnetic mask 153 is positioned on the back surface of the substrate 151 to correspond to the region where the pattern is to be formed.

Due to the magnetic force of the magnetic mask 153, as shown in FIG. 2c, the light-shielding film particles 100 dispersed in the binder 130 are positioned on the substrate 151 to correspond to the upper portion of the magnetic mask 153. .

Next, as shown in FIG. 2D , after removing the magnetic mask ( 153 in FIG. 2C ) from the back surface of the substrate 151 , a curing process of the light blocking film particles 100 is performed.

At this time, when the magnetic mask (153 in FIG. 2C) is removed from the back surface of the substrate 151, when the core 110 of the light-shielding film particle 100 is made of a metal material, the metallic material has paramagnetic properties, so the light-shielding film particles 100 loses its magnetic properties.

And, when the core 110 of the light-shielding film particle 100 is made of a magnetic material or a magnetic alloy, even if the magnetic mask (153 in FIG. will keep

The curing process is a process of aggregating the light-shielding film particles 100 positioned corresponding to the upper portion of the magnetic mask (153 in Fig. 2c). UV curing or heat is applied to the binder 130 including the light-shielding film particles 100. Irradiation may proceed with thermal curing.

When the curing process is completed, as shown in FIG. 2E , the light-shielding film particles 100 are aggregated in the binder 130 to form a pattern shape.

This self-patterning method of the light-shielding film particles 100 can form a pattern shape by the light-shielding film particles 100 corresponding to the area of the magnetic mask (153 in FIG. 2C ), so that a pattern shape having a fine line width of 10 μm or less can be easily formed can be formed

In addition, compared to the photolithography process, the initial investment cost is not required at all, so the process cost can be reduced, and the pattern shape can be formed very easily using the magnetic force of the magnetic mask (153 in Fig. 2c), so that exposure, Compared to the photolithography process in which multiple processes such as development have to be performed, the process time can be shortened very short, and the efficiency of the process itself is improved.

As described above, the light-shielding film particles 100 according to an embodiment of the present invention have light-shielding properties by the black shell 120 and a self-patterning method through the core 110 made of a metal material. Through this, the pattern shape can be easily implemented, and the pattern shape with a fine line width can be implemented.

In addition, since the shell 120 has high heat resistance and high resistance characteristics, excellent light blocking performance can be implemented, and also, since the binder 130 itself has high heat resistance characteristics, these light blocking film particles 100 are used in the binder ( 130) As they are dispersed therein, the binder 130 including the light-shielding film particles 100 also has higher heat resistance characteristics.

[Table 1] below is a result showing the basic physical properties of the light-shielding film formed through the self-patterning method of the light-shielding film particles 100 according to an embodiment of the present invention.

Item Sample 1 Resistance (Ω.cm) 2.0 * 10 ¹² Transmittance (OD) 3.4 reflectance (%) 5.9 Thickness (nm) 700 Thermal analysis method (rising temperature + isothermal @ 150 ~ 350℃) (wt%) 0.9 Line width (㎛) 5

In [Table 1], Sample 1 is formed by aggregating a plurality of light-shielding film particles 100 in which a core 110 made of a metallic material or a magnetic and diamagnetic material is surrounded by a black shell 120 to form a pattern shape in a binder. As a light-shielding film, it was formed through a self-patterning method.

Looking at [Table 1], since the light-shielding film according to the embodiment of the present invention has a resistance of 2.0 * 10 ¹² , it can be seen that it does not have a significant difference from the resistance value >10 ¹² when titanium black is used as the light-shielding film. have.

In addition, transmittance, reflectance, thickness, and thermal analysis method are not significantly different from the case of using titanium black as a light-shielding film.

In particular, when titanium black is used as a light shielding film, it is difficult to implement a line width of 10 μm or less, but the light blocking film according to an embodiment of the present invention can implement up to a line width of 5 μm.

That is, through [Table 1] above, the light-shielding film according to the embodiment of the present invention can implement a pattern shape of a fine line width while having similar physical properties compared to the case where the conventional titanium black is used as the light-shielding film.

Cure conditions (@oven) Wt% Loss Sample 1 250℃,60m 2.693% 350℃,60m 0.895% Sample 2 250℃,60m 3.619% 350℃,60m 0.999%

[Table 2] above is an experimental result comparing the heat resistance of the light-shielding film according to an embodiment of the present invention. In Sample 1, the core 110 made of a metallic material or magnetic and diamagnetic material is surrounded by a black shell 120. A light-shielding film formed by aggregating a large number of light-shielding film particles 100 in a binder to form a pattern shape, and was formed through a self-patterning method.

And, Sample 2 shows a light-shielding film containing carbon black in black particles made of Cu2O.

Looking at [Table 2] above, it can be seen that Sample 1 has better heat resistance than Sample 2.

Through this, it can be confirmed that the light-shielding film according to the embodiment of the present invention has high heat resistance. That is, since the light-shielding film according to the embodiment of the present invention has characteristics of high heat resistance and high resistance, excellent light-shielding performance can be realized.

3A is a scanning electron microscope (SEM) photograph showing a state in which a pattern shape is realized through the self-patterning method of the light-shielding film according to an embodiment of the present invention, and FIG. 3B is a photograph showing the surface of the light-shielding pattern of the light-shielding film of FIG. 3A. , Figure 3c is a photograph showing the surface of the transmission pattern of the light-shielding film.

And, Figure 4 is an experimental result of measuring the transmittance of the transmission pattern.

As shown, in the light-shielding film according to the embodiment of the present invention, a plurality of light-shielding film particles 100 in which a core 110 made of a metallic material or magnetic and diamagnetic material is surrounded by a black shell 120 is aggregated inside the binder. It can be confirmed that the pattern shape is formed through the self-patterning method. In this case, it can be seen that the light-shielding film particles are clearly separated from the binder inside the binder to form a pattern shape.

Through this, the light-shielding film is divided into a light-shielding pattern in which the light-shielding film particles are aggregated and a transmission pattern made of a binder to be defined.

At this time, the transmission pattern made of the binder has a high transmittance, and the transmittance of the transmission pattern can be confirmed with reference to FIG. 4 .

Sample 3 of FIG. 4 shows the transmittance of the photoacrylic most widely used as a planarization film, and Sample 4 shows the transmittance of the transmittance pattern of the light-shielding film according to an embodiment of the present invention.

Referring to the graph of FIG. 4 , it can be confirmed that the transmittances of Sample 4 and Sample 3 coincide in all wavelength bands.

That is, it can be confirmed that the transmission pattern of the light-shielding film according to the embodiment of the present invention has a transmittance similar to that of photoacrylic, and in particular, in the wavelength band of 380 to 780 nm, the transmittance is 99.12%, It can be confirmed that it has a very high transmittance.

- 1st embodiment -

5 is a cross-sectional view schematically illustrating a part of a liquid crystal display according to a first embodiment of the present invention.

At this time, the thin film transistor DTr is formed for each pixel region 1P, 2P, and 3P, but in the drawings, only one pixel region 1P is illustrated for convenience of explanation. In addition, for convenience of description, a region in which the thin film transistor DTr is provided in each of the pixel regions 1P, 2P, and 3P is defined as a switching region TrA.

As shown, the liquid crystal display according to the first embodiment of the present invention includes a lower first substrate 221 , an upper second substrate 222 , and a space between the first and second substrates 221 and 222 . and a liquid crystal layer 226 .

In this case, the first substrate 221 and the second substrate 222 may correspond to a glass substrate, a thin flexible substrate, or a polymer plastic substrate. In this case, the flexible substrate is polyethersulfone (PES), polyethylene naphthalate (PEN), polyimide (PI), polyethylene terephthalate (PET), and polycarbonate ( polycarbonate: PC).

On the inner surface of the first substrate 221, a plurality of gate wirings (not shown) formed in parallel and spaced apart by a predetermined distance intersect with the gate wirings (not shown) to define a plurality of pixel regions 1P, 2P, and 3P. A data wiring 224 is configured.

In addition, a thin film transistor DTr is formed in the switching region TrA at the intersection of the gate wiring (not shown) and the data wiring 224 of each of the plurality of pixel regions 1P, 2P, and 3P. ) is a semiconductor layer 226 comprising a gate electrode 223, a gate insulating film 225, an active layer 226a made of amorphous silicon and an ohmic contact layer 226b made of impurity amorphous silicon, source and drain electrodes 228, 229).

Here, the thin film transistor (DTr) is shown as an example of a bottom gate type in which the semiconductor layer 226 is made of pure and impurity amorphous silicon in the drawing, but as a modification thereof, the semiconductor layer is made of a polysilicon semiconductor layer. It may be formed in a top gate type.

In addition, a protective layer 231 is provided on the data line 224 and the source and drain electrodes 228 and 229, and for each pixel region 1P, 2P, 3P on the protective layer 231, the pixel electrode ( 235) is formed.

In this case, the pixel electrode 235 is electrically connected to the drain electrode 229 of the thin film transistor DTr through the drain contact hole 233 formed in the protective layer 231 .

A color filter layer 237 is formed on the second substrate 222 facing the first substrate 221 . The color filter layer 237 is formed repeatedly in each pixel area 1P, 2P, and 3P. , green, and blue color filters 237a, 237b, and 237c.

The light blocking film 200 is positioned on the color filter layer 237 . The light blocking film 200 according to the first embodiment of the present invention includes the gate wiring (not shown) and the data wiring 224 and the thin film of the first substrate 221 . The light blocking pattern 210 corresponding to the transistor DTr and the transmission pattern 220 are formed in a spaced apart region between the light blocking pattern 210 .

At this time, the light-shielding pattern 210 is formed by aggregation of a plurality of light-shielding film particles 100 in which a core 110 made of a metallic material or a magnetic and diamagnetic material is surrounded by a black shell 120 to form a pattern, and transmits The pattern 220 is made of a binder 130 in which the light blocking film particles 100 are dispersed.

In addition, a common electrode 238 made of a transparent conductive material is provided on the light blocking film 200 .

At this time, although not shown, a seal pattern (not shown) along the edges of both substrates 221 and 222 in order to prevent leakage of the liquid crystal layer 226 filled between the first substrate 221 and the second substrate 222 . city) is formed.

In order to control the alignment of the liquid crystal layer 226 , the surfaces facing the liquid crystal layer 226 are respectively predetermined on the first substrate 221 and the second substrate 222 facing each other with the liquid crystal layer 226 interposed therebetween. An alignment layer (not shown) rubbed in the direction is interposed to uniformly align the initial alignment state and alignment direction of the liquid crystal molecules.

In such a liquid crystal display device, when the thin film transistor (DTr) selected for each gate wiring (not shown) is turned on by the on/off signal of the gate driving circuit, the signal voltage of the data driving circuit is applied through the data wiring 224 . The liquid crystal molecules are transferred to the pixel electrode 235 and the arrangement direction of the liquid crystal molecules is changed by the electric field between the pixel electrode 235 and the common electrode 238 according to this, indicating a difference in transmittance.

The liquid crystal display according to the first embodiment of the present invention includes a light blocking film 200 including a light blocking pattern 210 and a transmission pattern 220 on the color filter layer 237, so that the light blocking pattern of the light blocking film 200 ( The thin film transistor DTr, the gate wiring (not shown), and the data line 224 and the non-display area not displaying an image are covered through the 210 to prevent light leakage.

In addition, color mixing of the light emitted from each of the pixel regions 1P, 2P, and 3P is prevented.

In particular, in the liquid crystal display according to the first embodiment of the present invention, the light blocking pattern 210 of the light blocking film 200 can be formed to have a fine line width, and the light blocking film 200 itself has high heat resistance and high resistance characteristics. Therefore, excellent light blocking performance can be realized.

In addition, as the light blocking layer 200 is formed of the light blocking pattern 210 and the transmission pattern 220 , the light blocking layer 200 has a flat surface as a whole, so that the planarization layer for planarization can be eliminated.

6A to 6F are cross-sectional views illustrating steps of manufacturing a second substrate including a color filter layer according to the first embodiment of the present invention.

As shown in FIG. 6A , one of red (R), green (B), and blue (B) colors, for example, a red resist, is spin coated on the second substrate 222 . After forming a red color filter layer (not shown) by coating the entire surface through a coating method such as , bar coating, etc., it is exposed through a mask (not shown) having a light transmission area and a blocking area, and development Accordingly, a plurality of red color filters 237a spaced apart from each other with a predetermined interval are formed corresponding to the first pixel region 1P.

Here, since the liquid crystal display typically forms a pattern in which red (R), green (G), and blue (B) colors are sequentially and repeatedly arranged, green and blue color filters ( 237b and 237c in FIG. 5 ) must be formed. A red color filter layer (not shown) is developed and removed for the second and third pixel regions 2P and 3P.

Next, as shown in FIG. 6B , a green resist is applied to the entire surface of the second substrate 222 on which the red color filter 237a is formed, a green color filter layer (not shown) is formed, and the red color filter 237a is formed. In the same manner as in the formation of , the green color filter 237b is formed corresponding to the plurality of second pixel regions 2P adjacent to the red color filter 237a, and the same procedure is performed for the blue resist. Accordingly, the red (R), green (B), and blue (B) color filters (R), green (B), and blue (B) color filters are formed by forming the blue color filter 237c corresponding to the plurality of third pixel regions 3P adjacent to the green color filter 237b. A color filter layer 143 having 237a, 237b, and 237c is formed.

Next, as shown in FIG. 6C , a plurality of light-shielding film particles 100 in which a core 110 made of a metallic material or magnetic and diamagnetic material is surrounded by a black shell 120 on the color filter layer 237 is formed. The included binder 130 is coated on the entire surface through a coating method such as spin coating or bar coating.

Next, as shown in FIG. 6D , the magnetic mask 153 is positioned on the rear surface of the second substrate 222 to correspond to the boundaries of the first to third pixel regions 1P, 2P, and 3P, and the magnetic mask ( 153), the light-shielding film particles 100 dispersed inside the binder 130 are positioned to correspond to the upper portion of the magnetic mask 153 .

Next, as shown in FIG. 6E , after removing the magnetic mask 153 from the back surface of the second substrate 222 , a curing process of the light-shielding film particles 100 is performed, and the light-shielding film particles 100 are aggregated to form a pattern By forming the color filter layer 237, the light-shielding pattern 210 by the light-shielding film particles 100 on the upper portion and the transmitting pattern 220 made of the binder 130 in the spaced area between the light-shielding pattern 210, including The light blocking film 200 is formed.

Thereafter, as shown in FIG. 6F , the common electrode 238 is formed on the light blocking film 200, thereby completing the second substrate 222 of the liquid crystal display according to the first embodiment of the present invention. do.

- Second embodiment -

7 is a cross-sectional view schematically illustrating a cross section of an organic light emitting diode according to a second embodiment of the present invention.

Meanwhile, in order to avoid overlapping descriptions, the same reference numerals are given to the same parts serving the same roles as those of the above-described first embodiment, and only the characteristic content to be described in the second embodiment will be described.

In this case, the driving thin film transistor DTr is formed for each pixel region P, but in the drawings, only one pixel region P is illustrated for convenience of explanation.

In addition, for convenience of explanation, an area that substantially implements an image is defined as an emission area EA, and an area in which the driving thin film transistor DTr and various wirings are formed is defined as a non-light emission area NEA.

And, prior to the description, the organic light emitting device (hereinafter referred to as OLED) is divided into a top emission type and a bottom emission type according to the transmission direction of the emitted light. The OLED according to the second embodiment is a top emission type.

As shown, in the OLED according to the second embodiment of the present invention, a substrate 301 on which a driving thin film transistor (DTr) and a light emitting diode E on which an organic light emitting layer 321 is formed is formed by an encaps substrate 302 . It is encapsulated.

That is, a semiconductor layer 303 is formed in the non-emission area NEA of the plurality of pixel areas P on the substrate 301 . The semiconductor layer 303 is made of silicon, and the central part thereof is an active area (channel) forming a channel. 303a) and source and drain regions 303b and 303c doped with a high concentration of impurities on both sides of the active region 303a.

A gate insulating layer 305 is formed on the semiconductor layer 303 .

On the gate insulating layer 305 , a gate electrode 307 corresponding to the active region 303a of the semiconductor layer 303 and a gate wiring extending in one direction (not shown) are formed.

In addition, an interlayer insulating film 309a is formed on the entire upper surface of the gate electrode 307 and the gate wiring (not shown). At this time, the interlayer insulating film 309a and the lower gate insulating film 305 are formed on both sides of the active region 303a. The first and second semiconductor layer contact holes 316 for exposing the located source and drain regions 303b and 303c, respectively, are provided.

Next, on the upper portion of the interlayer insulating film 309a including the first and second semiconductor layer contact holes 316 , the source and drain regions 303b are spaced apart from each other and exposed through the first and second semiconductor layer contact holes 316 ; 303c) and source and drain electrodes 310a and 310b respectively in contact with each other are formed.

A protective layer 309b having a drain contact hole 308 exposing the drain electrode 310b is formed on the source and drain electrodes 310a and 310b.

At this time, the semiconductor layer 303 including the source and drain electrodes 310a and 310b and the source and drain regions 303b and 303c in contact with the electrodes 310a and 310b, and the gate insulating film formed on the semiconductor layer 303 . 305 and the gate electrode 307 form a driving thin film transistor DTr.

Then, a data line 304 that intersects with the gate line (not shown) and defines the pixel region P is formed.

Also, although not shown in the drawing, the switching thin film transistor (not shown) has the same structure as the driving thin film transistor DTr and is connected to the driving thin film transistor DTr.

It is connected to the drain electrode 310b of the driving thin film transistor DTr and emits light with, for example, a material having a relatively high work function value in the light emitting area EA, which is an area substantially displaying an image, above the protective layer 309b. As one component constituting the diode E, a first electrode 321 constituting an anode is formed.

The light blocking film 300 is positioned above the first electrode 321, and the light blocking film 300 according to the second embodiment of the present invention includes a light blocking pattern 210 positioned to correspond to the boundary of each pixel region P; The transmission pattern 220 is formed to correspond to the light emitting area EA, which is a spaced apart area between the light blocking patterns 210 .

At this time, the light-shielding pattern 210 is formed by aggregation of a plurality of light-shielding film particles 100 in which a core 110 made of a metallic material or a magnetic and diamagnetic material is surrounded by a black shell 120 to form a pattern, and transmits The pattern 220 is made of a binder 130 in which the light blocking film particles 100 are dispersed.

Through the light blocking film 300, the driving and switching thin film transistor (DTr, not shown), the gate wiring (not shown) and the data wiring 304, including the non-emission area (NEA), which does not display an image, is covered and light leakage occurs. to prevent doing

Through the light blocking pattern 210 of the light blocking film 300 , the first electrode 321 is formed in a structure separated for each pixel area P. As shown in FIG.

An organic light emitting layer 323 emitting white light is formed on the light blocking film 300 .

The organic light emitting layer 323 may be composed of a single layer made of a light emitting material, and in order to increase light emission efficiency, a hole injection layer, a hole transport layer, a light emitting layer (emitting material layer), an electron transport layer ( It may be composed of multiple layers of an electron transport layer and an electron injection layer.

In addition, a second electrode 325 constituting a cathode is formed on the entire surface of the organic light emitting layer 323 .

In this case, the second electrode 315 has a double-layer structure, in which a transparent conductive material is thickly deposited on a translucent metal film in which a metal material having a low work function is thinly deposited.

The first electrode 321 , the organic light emitting layer 323 , and the second electrode 325 form a light emitting diode (E).

Accordingly, the light emitted from the organic light emitting layer 323 is driven in a top light emission method that is emitted toward the second electrode 325 .

In such an OLED, when a predetermined voltage is applied to the first electrode 321 and the second electrode 325 according to a selected signal, holes injected from the first electrode 321 and electrons provided from the second electrode 325 are organic. It is transported to the emission layer 323 to form excitons, and when these excitons are transitioned from an excited state to a ground state, light is generated and emitted in the form of visible light.

At this time, since the emitted light passes through the transparent second electrode 325 and goes out, the OLED realizes an arbitrary image.

In addition, an encapsulation substrate 302 for encapsulation is provided on the driving thin film transistor DTr and the light emitting diode E.

Here, the substrate 301 and the encaps substrate 302 are provided with an adhesive (not shown) made of a sealant or a frit along their edges, and the substrate 301 and the encaps substrate 302 are formed by such an adhesive (not shown). is cemented to maintain the panel state.

At this time, the inert gas atmosphere may exist between the substrate 301 and the encaps substrate 302 spaced apart from each other by having a vacuum state or by filling with an inert gas.

On the other hand, although the OLED according to the above-described second embodiment has been described and illustrated that the encapsulation substrate 302 for encapsulation is provided in a form facing and spaced apart from the substrate 301, as a modification, the encapsulation substrate 302 is provided. The silver adhesive layer (not shown) may be configured to contact the second electrode 325 provided on the uppermost layer of the substrate 301 in the form of a film.

In addition, as another modification according to the second embodiment of the present invention, an organic insulating film or an inorganic insulating film may be further provided on the second electrode 325 to form a capping film (not shown), and the organic insulating film or inorganic insulating film may be formed. may itself be used as an encapsulation film (not shown), and in this case, the encapsulation substrate 302 may be omitted.

As described above, the OLED according to the second embodiment of the present invention includes the light blocking film 300 including the light blocking pattern 210 and the transmission pattern 220 on the first electrode 321, so that the Through the light blocking pattern 210, the driving and switching thin film transistor (DTr, not shown), the gate wiring (not shown) and the data wiring 304 as well as the non-display area (NEA) that does not display an image is covered so that light leakage occurs. will prevent

In particular, in the OLED according to the second embodiment of the present invention, the light blocking pattern 210 of the light blocking film 300 can be formed to have a fine line width, and the light blocking film 300 itself has characteristics of high heat resistance and high resistance. Light blocking performance can be realized.

In addition, as the light blocking layer 300 includes the light blocking pattern 210 and the transmission pattern 220 , the light blocking layer 300 has a flat surface as a whole, so that the planarization layer for planarization can be eliminated.

Accordingly, in the process of forming the organic light emitting layer 323 and the second electrode 325 on the light blocking film 300 , the organic light emitting layer 323 and the second electrode 325 are more easily formed by the light blocking film 300 having a flat surface. Also, the organic light emitting layer 323 and the second electrode 325 may be formed so as not to have a step difference, so that a difference in luminous efficiency occurs due to the step difference between the organic light emitting layer 323 or the second electrode 325 . ), it is possible to prevent the occurrence of drive failure due to disconnection failure due to this step.

- 3rd embodiment -

8 is a cross-sectional view schematically showing a cross section of an OLED according to a third embodiment of the present invention.

On the other hand, in order to avoid overlapping description, the same reference numerals are given to the same parts serving the same roles as those of the above-described first and second embodiments, and only the characteristic content to be described in the third embodiment will be described. would.

Hereinafter, the OLED according to the third embodiment of the present invention is a bottom emission type.

As shown, in the OLED according to the third embodiment of the present invention, a substrate 401 on which a driving thin film transistor (DTr) and a light emitting diode E on which an organic light emitting layer 423 is formed is formed by an encaps substrate 402 . It is encapsulated.

Looking at this in more detail, the light blocking film 400 is positioned on the substrate 401 , and the light blocking film 400 includes a light blocking pattern 210 corresponding to the non-emission area NEA of the pixel area P on the substrate 401 and , the transmission pattern 220 corresponding to the emission area EA of the pixel area P.

At this time, the light-shielding pattern 210 is formed by aggregation of a plurality of light-shielding film particles 100 in which a core 110 made of a metallic material or a magnetic and diamagnetic material is surrounded by a black shell 120 to form a pattern, and transmits The pattern 220 is made of a binder 130 in which the light blocking film particles 110 are dispersed.

The light blocking pattern 210 of the light blocking layer 400 serves to protect the active region 403a of the semiconductor layer 403 from external light.

In addition, a buffer layer 404 is formed on the entire surface of the light blocking film 400 . In this case, the buffer layer 404 may be made of silicon nitride (SiNx) or silicon oxide (SiO2) of an inorganic insulating material.

Source and drain electrodes 410a and 410b above the buffer layer 404 corresponding to the light blocking pattern 210 , source and drain regions 403b and 403c in contact with the electrodes 410a and 410b , and source and drain regions A semiconductor layer 403 including an active region 403a between 403b and 403c and a driving thin film transistor DTr including a gate insulating film 405 and a gate electrode 407 formed on the semiconductor layer 403 are formed. is formed

A gate wiring (not shown) extending in one direction is formed on the upper portion of the gate insulating film 405 , and an interlayer insulating film 409a is formed on the source and drain electrodes 410a and 410b, and the interlayer insulating film ( The 409a includes first and second semiconductor layer contact holes 416 exposing the source and drain regions 403b and 403c.

A protective layer 409b having a drain contact hole 408 exposing the drain electrode 410b is formed on the source and drain electrodes 410a and 410b.

In addition, a data line (not shown) that crosses the gate line (not shown) and defines the pixel region P is formed.

It is connected to the drain electrode 410b of the driving thin film transistor DTr and is a light emitting area EA that is connected to the drain electrode 410b of the driving thin film transistor DTr and is an area that displays an image substantially above the protective layer 409b, as a component constituting the light emitting diode E. A first electrode 421 constituting an anode is formed.

The first electrode 421 is formed for each pixel area P, and a bank 419 is positioned between the first electrodes 421 formed for each pixel area P.

That is, the first electrode 421 is formed in a structure separated for each pixel region P by using the bank 419 as a boundary for each pixel region P. As shown in FIG.

In addition, an organic light emitting layer 423 is formed on the first electrode 421 .

The organic light emitting layer 423 expresses red (R), green (G), and blue (B) colors or white (W) colors for each pixel area P.

In addition, a second electrode 425 constituting a cathode is formed on the entire surface of the organic light emitting layer 413 .

Accordingly, the light emitted from the organic light emitting layer 423 is driven in a bottom emission manner that is emitted toward the first electrode 425 .

As described above, the OLED according to the third embodiment of the present invention includes the light blocking film 400 including the light blocking pattern 210 and the transmission pattern 220 under the driving thin film transistor (DTr), so that the light blocking film 400 is formed. The active region 403a of the semiconductor layer 403 may be protected from external light through the light blocking pattern 210 .

In particular, in the OLED according to the third embodiment of the present invention, the light blocking pattern 210 of the light blocking film 400 can be formed to have a fine line width, and the light blocking film 400 itself has characteristics of high heat resistance and high resistance. Light blocking performance can be realized.

In addition, as the light-shielding film 400 is composed of the light-shielding pattern 210 and the transmission pattern 220, the light-shielding film 400 has a flat surface as a whole. 400) The buffer layer 404 positioned above may be formed using an inorganic insulating material having a thin thickness.

That is, the buffer layer 404 only needs to shield electrical interference between the light blocking film 400 and the driving thin film transistor (DTr). It can be formed to have a thin thickness.

- 4th embodiment -

9 is a cross-sectional view schematically illustrating a cross section of an OLED according to a fourth embodiment of the present invention.

On the other hand, in order to avoid overlapping description, the same reference numerals are given to the same parts having the same role as those of the above-described first to third embodiments, and only the characteristic content to be described in the fourth embodiment will be described. would.

Hereinafter, the OLED according to the fourth embodiment of the present invention is a bottom emission type.

As shown, in the OLED according to the fourth embodiment of the present invention, a substrate 501 on which a driving thin film transistor (DTr) and a light emitting diode E on which an organic light emitting layer 523 is formed is formed by an encaps substrate 502 . It is encapsulated.

Looking at this in more detail, a light blocking film 500 is positioned on the substrate 501 , and the light blocking film 500 includes a light blocking pattern 210 corresponding to the non-emission area NEA of the pixel area P on the substrate 501 and , the transmission pattern 220 corresponding to the emission area EA of the pixel area P.

At this time, the light-shielding pattern 210 is formed by aggregation of a plurality of light-shielding film particles 100 in which a core 110 made of a metallic material or a magnetic and diamagnetic material is surrounded by a black shell 120 to form a pattern, and transmits The pattern 220 is made of a binder 130 in which the light blocking film particles 110 are dispersed.

The light blocking pattern 210 of the light blocking film 500 serves to protect the active region 503a of the semiconductor layer 503 from external light.

In addition, a buffer layer 522 is formed on the entire surface of the light blocking layer 500 . In this case, the buffer layer 522 may be made of silicon nitride (SiNx) or silicon oxide (SiO2) of an inorganic insulating material.

Source and drain electrodes 510a and 510b above the buffer layer 522 corresponding to the light blocking pattern 210, source and drain regions 503b and 503c in contact with the electrodes 510a and 510b, and source and drain regions ( A semiconductor layer 503 including an active region 503a between 503b and 503c and a driving thin film transistor DTr including a gate insulating film 505 and a gate electrode 507 formed on the semiconductor layer 503 are formed. has been

A gate wiring (not shown) extending in one direction is formed on the upper portion of the gate insulating film 505, an interlayer insulating film 509a is formed on the source and drain electrodes 510a and 510b, and the interlayer insulating film ( The 509a includes first and second semiconductor layer contact holes 516 exposing the source and drain regions 503b and 503c.

A protective layer 509b having a drain contact hole 508 exposing the drain electrode 510b is formed on the source and drain electrodes 510a and 510b.

In addition, a data line 504 that crosses the gate line (not shown) and defines the pixel region P is formed.

As one component constituting the light emitting diode E, it is connected to the drain electrode 510b of the driving thin film transistor DTr and is in the light emitting area EA, which is an area substantially displaying an image, above the protective layer 509b. A first electrode 521 constituting an anode is formed.

The first electrode 521 is formed for each pixel area P, and a light-blocking barrier rib 530 is positioned between the first electrodes 521 formed for each pixel area P.

That is, the first electrode 521 is formed in a structure separated for each pixel region P by using the light blocking barrier rib 530 as a boundary for each pixel region P.

At this time, in the light blocking barrier rib 530 according to the fourth embodiment of the present invention, a plurality of light blocking film particles 110 in which a core 110 made of a metallic material or magnetic and diamagnetic material is surrounded by a black shell 120 is a binder. (130) is formed by agglomeration inside the pattern shape.

In addition, an organic light emitting layer 523 is formed on the first electrode 521 .

The organic light emitting layer 523 expresses red (R), green (G), and blue (B) colors or white (W) colors for each pixel area P.

In addition, a second electrode 525 constituting a cathode is formed on the entire surface of the organic light emitting layer 523 .

Accordingly, the light emitted from the organic light emitting layer 523 is driven in a bottom emission manner that is emitted toward the first electrode 521 .

As described above, the OLED according to the fourth embodiment of the present invention includes the light blocking film 500 including the light blocking pattern 210 and the transmission pattern 220 under the driving thin film transistor (DTr), so that the light blocking film 500 is formed. The active region 503a of the semiconductor layer 503 may be protected from external light through the light blocking pattern 210 .

In particular, in the OLED according to the fourth embodiment of the present invention, the light blocking pattern 210 of the light blocking film 500 can be formed to have a fine line width, and the light blocking film 500 itself has characteristics of high heat resistance and high resistance. Light blocking performance can be realized.

In addition, as the light-shielding film 500 is composed of the light-shielding pattern 210 and the transmission pattern 220, the light-shielding film 500 has a flat surface as a whole. 500) The buffer layer 522 positioned above may be formed using an inorganic insulating material having a thin thickness.

In addition, by providing the light blocking barrier rib 530 over the first electrode 521 , the driving and switching thin film transistor (DTr, not shown), the gate wiring (not shown), and the data line 504 through the light blocking barrier rib 530 . Light leakage is prevented by covering the non-display area (NEA) that does not display an image, including .

At this time, the light-shielding barrier rib 530 is formed by coating the binder 130 in which the light-shielding film particles 110 are dispersed on the upper portion of the first electrode 521 , and then using a magnetic mask (153 in FIG. 6D ) to remove the light-shielding film particles 110 . It can be formed by aggregating the light-shielding pattern 210 and dividing the transmission pattern 220 of the binder 130 , and then removing the binder 130 corresponding to the transmission pattern 220 .

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

100: light-shielding film particles (110: core, 120: shell)
130: binder
140: thermosetting crosslinking agent

Claims (20)

a first substrate including a thin film transistor positioned for each pixel area and a pixel electrode connected to the thin film transistor;
a second substrate facing the first substrate;
a red (R), green (B), and blue (B) color filter positioned above the first substrate or below the second substrate;
and a light-shielding film positioned above or below the red (R), green (G), and blue (B) color filters, wherein the light-shielding film includes a core made of a metallic material and a black shell. A display device comprising: a light-shielding pattern made of a binder in which a plurality of light-shielding film particles are dispersed; and a transmission pattern made of the binder.
a first substrate having a plurality of pixel regions defined by being divided into a light emitting region and a non-emitting region, respectively;
a first electrode provided for each pixel area;
a light blocking film disposed on the first electrode;
an organic light emitting layer disposed on the light blocking film;
a second electrode positioned above the organic light emitting layer;
The light blocking film is composed of a light blocking pattern and a transmission pattern disposed between the pixel regions,
The light-shielding pattern comprises a core made of a metallic material and a binder sprayed with a plurality of light-shielding film particles comprising a black shell, and the transmission pattern comprises a binder.
a first substrate on which a plurality of pixel regions are defined;
It is located on the first substrate and includes a light-shielding pattern made of a binder in which a plurality of light-shielding film particles are dispersed and a core made of a metal material is surrounded by a black shell and a transmission pattern made of the binder. a light-shielding film;
a buffer layer positioned above the light-shielding film;
a driving thin film transistor positioned above the buffer layer for each pixel area corresponding to the light blocking pattern;
a first electrode connected to the driving thin film transistor and provided for each pixel area;
an organic light emitting layer positioned above the first electrode;
a second electrode positioned above the organic light emitting layer
A display device comprising a.
4. The method of claim 3,
Corresponding to the boundary of the pixel region, a light-shielding barrier rib made of a binder in which the light-shielding film particles composed of the core and the shell are dispersed is positioned;
The organic light emitting layer is positioned above the first electrode in a region surrounded by the light blocking barrier rib.
The method of claim 1,
The light blocking pattern is positioned to correspond to the boundary of the pixel region, and the transmission pattern is positioned to correspond to the red (R), green (G), and blue (B) color filters.
The method of claim 1,
A display device further comprising: a common electrode spaced apart from the pixel electrode; and a liquid crystal layer between the first substrate and the second substrate.
The method of claim 1,
Further comprising an organic light emitting device electrically connected to the pixel electrode,
The organic light emitting device has a plurality of organic material layers stacked, emits white light, and is positioned between the first substrate and the color filter or between the second substrate and the color filter.
4. The method according to any one of claims 1 to 3,
The core is made of at least one metal material selected from the group consisting of platinum (Pt), palladium (Pd), silver (Ag), copper (Cu), and gold (Au),
Cobalt (Co), manganese (Mn), iron (Fe), nickel (Ni), gadolithium (Gd), molybdenum (Mo), MM′ ₂ O ₄ , and MxOy (M and M′ are each independently Co, represents Fe, Ni, Mn, Zn, Gd, or Cr, and consists of at least one magnetic material selected from the group consisting of 0 < x ≤ 3, 0 < y ≤ 5), or
A display device comprising at least one magnetic alloy selected from the group consisting of CoCu, CoPt, FePt, CoSm, NiFe and NiFeCo.
4. The method according to any one of claims 1 to 3,
The shell is a group of titanium black, lactam black, CuMnOx, Cu(Cr, Mn)xOy, Cu(Cr, Fe)xOy, (Fe, Mn)(Fe, Mn)xOy, TiNxOy A display device selected from at least one.
4. The method according to any one of claims 1 to 3,
The core has a nanocrystal size of 3 to 10 nm, and the light blocking film particles have a nanocrystal size of 10 to 300 nm.
4. The method according to any one of claims 1 to 3,
The binder is at least one selected from the group consisting of siloxane and silsesquioxane, and includes a thermosetting crosslinking agent.
4. The method of claim 3,
The buffer layer is made of a silicon nitride (SiNx) or silicon oxide (SiO2) of an inorganic insulating material selected from the display device.
a) applying a binder including a plurality of light-shielding film particles in which a core made of a metallic material is surrounded by a black shell on a substrate;
b) positioning a magnetic mask on the back surface of the substrate to position the plurality of light-shielding film particles on the substrate to correspond to the upper portion of the magnetic mask;
c) after removing the magnetic mask, irradiating ultraviolet rays or heat with a binder containing the light-shielding film particles to aggregate the light-shielding film particles to form a light-shielding film,
The light-shielding film includes a light-shielding pattern made of the light-shielding film particles and a transmission pattern made of only the binder.
14. The method of claim 13,
Before step c), forming red, green, and blue color filters for each pixel area on the substrate;
The light blocking pattern is positioned to correspond to a boundary of the pixel region, and the transmission pattern is positioned above the red, green, and blue color filters.
15. The method of claim 14,
and forming a common electrode on the light blocking layer after step c).
14. The method of claim 13,
Before step a), forming a driving thin film transistor and
and forming a first electrode connected to the driving thin film transistor,
The light blocking pattern is positioned to correspond to a non-emission area of a pixel area including an upper portion of the driving thin film transistor,
and after step c), sequentially forming an organic light emitting layer and a second electrode on the light blocking layer.
14. The method of claim 13,
after step c), forming a buffer layer over the light blocking layer;
forming a driving thin film transistor on the buffer layer to correspond to the light blocking pattern;
forming a first electrode connected to the driving thin film transistor;
Sequentially forming an organic light emitting layer and a second electrode on the first electrode
A method of manufacturing a display device comprising a.
18. The method of claim 17,
The method further comprising the step of forming a bank over the driving thin film transistor, wherein the organic light emitting layer is positioned inside the bank.
18. The method of claim 17,
Further comprising the step of forming a light-shielding barrier rib made of a binder containing the light-shielding film particles comprising the core and the shell on the driving thin film transistor,
A method of manufacturing a display device in which the organic light emitting layer is positioned inside the light blocking barrier rib.
The display device of claim 3 , further comprising a bank layer disposed in a region corresponding to a boundary of the pixel region.

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