KR20090106196A - Organic Light Emitting Display - Google Patents

Abstract

PURPOSE: An organic light emitting display is provided to prevent a photo leakage current in an active layer of a transistor by including an opaque layer or a planarization layer. CONSTITUTION: A transistor includes an active layer(120), a gate, a source(121) and a drain(122). An opaque resin layer(140) is positioned on the transistor. The opaque resin layer exposes the source or drain. A first electrode(160) is positioned on the first electrode. The first electrode is connected to the source or drain. A bank layer(145) is positioned on the opaque resin layer. The bank layer has an opening exposing a part of the first electrode. A light emitting layer(170) is positioned on the first electrode exposed through the opening. A second electrode(180) is positioned on the light emitting layer.

Description

Organic Light Emitting Display

The present invention relates to an organic light emitting display device.

The organic light emitting display device used in the organic light emitting display device was a self-light emitting device having a light emitting layer formed between two electrodes.

In the organic light emitting device, electrons and holes are injected into the light emitting layer from an electron injection electrode and a hole injection electrode, respectively, and an exciton in which the injected electrons and holes combine is excited. The device emits light when it falls from the ground state to the ground state.

An organic light emitting display device using an organic light emitting display device includes a top emission method and a bottom emission method according to a direction in which light is emitted, and a passive matrix type according to a driving method. ) And Active Matrix. Such an organic light emitting display device is formed through a manufacturing process in which a deposition process and an etching process are performed in parallel to form a transistor, a capacitor, an organic light emitting diode, and the like on a substrate.

On the other hand, the organic light emitting display device using the conventional top light emission method has a structure that reflects the light incident from the outside by applying a material with high reflectivity as a reflective member in order to improve the luminous efficiency used. However, since the reflective member reflects external light, conventional organic light emitting display devices have caused a problem of low contrast. In order to solve this problem, a circular polarizer is conventionally applied to the surface of the panel to prevent reflection problems. However, the circular polarizer has a problem of reducing power transmission by reducing light transmission from the inside, and a problem of causing a complicated process and a high cost of materials, which requires improvement.

SUMMARY OF THE INVENTION An object of the present invention is to prevent photoliquid current occurring in an active layer of a transistor unit and to improve display quality and production yield of an organic light emitting display device.

The present invention as a problem solving means described above, the substrate; A transistor unit including an active layer, a gate, a source, and a drain disposed on the substrate; An opaque resin film disposed on the transistor portion and exposing a source or a drain; A first electrode on the opaque resin film and connected to the source or the drain; A bank layer positioned on the opaque resin film and having an opening for exposing a portion of the first electrode; An organic light emitting layer on the first electrode exposed through the opening; And a second electrode on the organic light emitting layer.

An opaque resin film can contain resin which has light-shielding property.

The opaque resin film may have a black color.

The scan line may be disposed on the substrate, and may include scan lines connected to the gate and data lines connected to the source or drain. The opaque resin film may cover the scan lines and the data lines.

The transistor unit includes: a gate disposed on the substrate, a first insulating layer positioned on the gate, an active layer positioned on the first insulating layer, a source and a drain disposed on the first insulating layer and in contact with the active layer, respectively; A second insulating film is disposed on the source and the drain and exposes the source or drain, and the opaque resin film is located on the second insulating film and may expose the source or drain.

The transistor unit includes an active layer on the substrate, a first insulating film on the active layer, a gate on the first insulating film, a second insulating film on the gate, and a second insulating film. A source and a drain in contact with the active layer, respectively, and a third insulating layer disposed on the source and the drain and exposing the source or drain, wherein the opaque resin film is disposed on the third insulating layer and may expose the source or drain. .

SUMMARY OF THE INVENTION The present invention provides an opaque resin film that serves as a flattening film or a passivation film and a black matrix, thereby preventing photoliquid current generated in the active layer of the transistor unit and improving display quality and production yield of the organic light emitting display device. .

Hereinafter, with reference to the accompanying drawings, the specific content for the practice of the present invention will be described.

1 is a schematic plan view of an organic light emitting display device according to an embodiment of the present invention.

As illustrated in FIG. 1, the organic light emitting display device may include a display unit AA in which a plurality of sub pixels P are positioned on the substrate 110. The plurality of sub pixels P located on the substrate 110 are vulnerable to moisture or oxygen.

Accordingly, the sealing substrate 190 may be provided, and the adhesive member SL may be formed on the outer substrate 110 of the display unit AA to encapsulate the substrate 110 and the sealing substrate 190. Meanwhile, the plurality of sub pixels P may be driven by the driver DRV positioned on the substrate 110 to represent an image.

The driver DRV may generate a scan signal, a data signal, etc. in response to various signals supplied from the outside, and supply the generated signal to the display unit AA.

The driver DRV may include a scan driver supplying a scan signal to the plurality of subpixels P and a data driver supplying a data signal to the plurality of subpixels P. FIG. Here, the driver DRV is only schematically illustrated as an example in which the scan driver and the data driver are formed on one chip, and the scan driver and the data driver may be located separately from the substrate 110 or the outside of the substrate 110. have.

Hereinafter, the connection relationship between the subpixels will be described in more detail with reference to a circuit configuration example of the subpixel P. FIG.

2 is a diagram illustrating a circuit configuration of the subpixel illustrated in FIG. 1.

As illustrated in FIG. 2, the subpixel may include a switching transistor S1 having a gate connected to the scan line SCAN, one end connected to the data line DATA, and the other end connected to the first node A. Referring to FIG. have. The organic light emitting diode D may include an organic light emitting diode D connected to the first power line VDD and a first electrode connected to the second node B. In addition, the transistor may include a driving transistor T1 having a gate connected to the first node A, one end connected to the second electrode of the organic light emitting diode D, and the other end connected to the second node B. In addition, one end is connected to the first node (A) and may include a capacitor (Cst) is connected to the other end of the second node (B) and the second power line (VSS).

In the above-described circuit configuration of the subpixel, the transistors S1 and T1 may be N-type transistors as illustrated, but are not limited thereto.

The power supply voltage supplied through the first power supply line VDD may be higher than the ground voltage supplied through the second power supply line VSS, and supplied through the first power supply line VDD and the second power supply line VSS. The voltage level can be switched according to the driving method.

As described above, when the scan signal is supplied through the scan line SCAN, the switching transistor S1 may be turned on. Next, when the data signal supplied through the data line DATA is supplied to the first node A via the turned-on switching transistor S1, the capacitor Cst may store the data signal as a data voltage. Next, when the scan signal is blocked and the switching transistor S1 is turned off, the driving transistor T1 may drive in response to the data voltage stored in the capacitor Cst. Next, the power supply voltage supplied through the first power line VDD flows through the second power line VSS, so that the organic light emitting diode D may emit light. However, this is only an example of the driving method, but is not limited thereto.

Hereinafter, the cross-sectional structure of the sub-pixel P according to an embodiment of the present invention will be described in more detail.

3A and 3B are cross-sectional views of subpixels according to an exemplary embodiment of the present invention.

The subpixel P is positioned on the transistor portion and the transistor portion including the switching transistor, the driving transistor, and the capacitor positioned on the substrate, and is disposed on the first electrode and the first electrode connected to the source or drain of the driving transistor. The organic light emitting diode may include an organic light emitting diode including a light emitting layer and a second electrode on the light emitting layer. Hereinafter, with reference to FIG. 3A and FIG. 3B, each structure is demonstrated in the order laminated on a board | substrate.

First, referring to FIG. 3A, a buffer layer 105 may be positioned on the substrate 110. The buffer layer 105 is formed to protect the transistor formed in a subsequent process from impurities such as alkali ions flowing out of the substrate 110, and selectively using silicon oxide (SiO ₂ ), silicon nitride (SiNx), or the like. Can be formed.

Here, the substrate 110 may be glass, plastic, or metal.

Gates 106 and 107 may be positioned on the buffer layer 105. Gates 106 and 107 are formed of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be made of any one or an alloy thereof. In addition, the gates 106 and 107 are made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a multi-layer consisting of any one or an alloy thereof selected from the group. In addition, the gates 106 and 107 may be bilayers of molybdenum / aluminum-neodymium or molybdenum / aluminum.

Here, the gate “106” may be a gate of the driving transistor, and the gate “107” may be a scan wiring connected to the gate of the switching transistor.

The first insulating layer 115 may be positioned on the gates 106 and 107. The first insulating film 115 may be a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof, but is not limited thereto. The lower electrode of the capacitor may be positioned on the same layer as the gates 106 and 107.

The active layer 120 and the data line 125 may be positioned on the first insulating layer 115. The active layer 120 may include amorphous silicon, crystallized polycrystalline silicon, or the like. The active layer 120 may include a source region and a drain region including p-type or n-type impurities, and may include channel regions other than the source region and the drain region.

The source 121 and the drain 122 may be located in the source region and the drain region of the active layer 120, respectively. The source 121 and the drain 122 may be formed of a single layer or multiple layers. When the source 121 and the drain 122 are a single layer, molybdenum (Mo), aluminum (Al), chromium (Cr), and gold may be used. (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) may be made of any one or an alloy thereof. In addition, when the source 121 and the drain 122 are multiple layers, the double layer of molybdenum / aluminum-neodymium and the triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum may be used.

Here, not only the data line 125 but also the capacitor upper electrode and the power line may be positioned on the same layer as the source 121 and the drain 122. The power line including the data line 125 may be formed of a single layer or multiple layers. When the power line including the data line 125 is a single layer, molybdenum (Mo), aluminum (Al), and chromium (Cr) may be used. , Gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) may be made of any one or an alloy thereof. In addition, when the power line including the data line 125 is a multilayer, the double layer of molybdenum / aluminum-neodymium and the triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum may be used. In addition, the power line including the data line 125 may be formed of a triple layer of molybdenum / aluminum-neodymium / molybdenum.

The second insulating layer 130 exposing the source 121 or the drain 122 may be positioned on the first insulating layer 115 including the source 121 and the drain 122. The second insulating layer 130 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

An opaque resin film 140 exposing the source 121 or the drain 122 may be disposed on the second insulating film 130. The opaque resin film 140 may be a resin having a light shielding property, but may be one in which a light blocking material is colored in the resin. The opaque resin film 140 may have a black color in order to increase light blocking property, but is not limited thereto. However, the opaque resin film 140 should be non-conductive, have a flat pattern after etching, and use a material that does not generate a material (eg, outgassing) that adversely affects the light emitting layer 170.

Here, as the light blocking material, for example, a material capable of forming a black series may be selected as the light blocking material. The resin may be selected from a compound having an ethylenic double bond as a photopolymerizable compound which is cured by being irradiated with light such as ultraviolet rays and cured.

When the opaque resin film 140 is formed in this way, the active layer 120 of the transistor unit located below is prevented from being exposed by external light, thereby preventing the occurrence of photoliquid current. Accordingly, it is possible to prevent a problem in which the screen whitening occurs on the panel, thereby improving the contrast ratio. The opaque resin film 140 may cover almost all of the scan wiring 111 and the data wiring 125 positioned in an area adjacent to the transistor unit, so that external light may pass through the scan wiring 111 and the data wiring 125. Problems can be prevented.

The opaque resin film 140 may also function as a passivation film to protect the transistor unit as well as a planarization film for alleviating the step of the lower structure.

The first electrode 160 electrically connected to the source 121 or the drain 122 may be disposed on the opaque resin film 140. Here, the first electrode 160 may be an anode and may be a transparent electrode or an opaque electrode. Herein, when the structure of the organic light emitting display device is a backside or a double-sided light emitting device, the first electrode 160 may be a transparent electrode, and any one of indium tin oxide (ITO), indium zinc oxide (IZO), or zinc oxide (ZnO) may be used. It can be one.

A bank layer 145 may be positioned on the first electrode 160 to insulate adjacent first electrodes and to expose a portion of the first electrode 160.

The emission layer 170 may be positioned on the first electrode 160 exposed by the opening of the bank layer 145.

The second electrode 180 may be positioned on the emission layer 170. The second electrode 180 may be a cathode, and may be made of magnesium (Mg), calcium (Ca), aluminum (Al), silver (Ag), or an alloy thereof having a low work function, but is not limited thereto.

Here, the second electrode 180 may be formed to be thin enough to transmit light when the organic light emitting display device is a front or double-side light emitting structure, and to emit light when the organic light emitting display device is a rear light emitting structure. It can be formed thick enough to reflect.

In the above description, as an example, the gate included in the transistor unit has a bottom gate type disposed below. In contrast, the transistor unit includes an active layer on the substrate, a first insulating layer on the active layer, a gate on the first insulating layer, a second insulating layer on the gate, and a second insulating layer on the second insulating layer. It may also be a top gate type including a source and a drain in contact with each other, and a third insulating layer disposed on the source and the drain and exposing the source or drain. In this case, as illustrated, the opaque resin film 140 may be positioned on the third insulating film to expose a source or a drain, and the first electrode may be located on the opaque resin film 140.

Meanwhile, referring to FIG. 3B, the organic light emitting display device according to the exemplary embodiment of the present invention may form a passivation layer 185 that protects the second electrode 180. The passivation layer 185 may be formed on the substrate 110 to cover all of the second electrodes 180 positioned on the uppermost layer of the device.

Such an organic light emitting display device may have various methods for implementing a color image. The implementation method will be described with reference to FIGS. 4 to 6.

4 to 6 are views illustrating embodiments of implementing a color image in an organic light emitting display device according to an embodiment of the present invention.

First, in the color image implementation method shown in FIG. 4, a color of the organic light emitting display device having a red light emitting layer 170R, a green light emitting layer 170G, and a blue light emitting layer 170B separately emitting red, green, and blue light, respectively. It shows the image implementation.

As shown in FIG. 4, red light, green light, and blue light are respectively provided from the light emitting layers 170R, 170G, and 170B, so that red light, green light, and blue light may be mixed to display a color image.

Here, an electron transport layer (ETL), a hole transport layer (HTL), etc. may be further included on the upper and lower portions of each of the light emitting layers 170R, 170G, and 170B, and various modifications may be made to the arrangement and structure thereof.

In addition, the color image implementation method shown in FIG. 5 includes an organic light emitting display including a white light emitting layer 270W, a red color filter 290R, a green color filter 290G, a blue color filter 290B, and a white color filter 290W. A color image implementation method of the display device is shown.

As shown in FIG. 5, the white light provided from the white light emitting layer 270W passes through the red color filter 290R, the green color filter 290G, the blue color filter 290B, and the white color filter 290W, respectively. The red light, the green light, the blue light, and the white light may be generated and mixed, respectively, to display a color image. Here, the white color filter 290W may be configured or removed as described above according to the harmony of the color of the white light provided from the white light emitting layer 270W and the color of the white light meeting the red light / green light / blue light.

In addition, although FIG. 5 illustrates a color implementation method using four subpixels according to a combination of red light, green light, blue light, and white light, a color implementation method using three subpixels according to a combination of red light, green light, and blue light may be used. have.

Here, an electron transport layer (ETL), a hole transport layer (HTL), and the like may be further included above and below each of the white light emitting layers 270W, and various modifications may be made to the arrangement and structure thereof.

In addition, the color image implementation method shown in FIG. 6 includes a blue light emitting layer 370B, a red color changing medium 390R, a green color changing medium 390G, and a blue color changing medium. A color image implementation method of an organic light emitting display device having a medium 370B is shown.

As shown in FIG. 6, the blue light provided from the blue light emitting layer 370B is converted into a red color changing medium 390R, a green color changing medium 390G, and a blue color conversion medium ( Each of the red light / green light / blue light is generated and mixed while passing through the color changing medium 370B, thereby displaying a color image.

Here, the blue color conversion medium 370B may be configured or removed as described above according to the harmony of the color of the blue light provided from the blue light emitting layer 370B and the color of the blue light that meets the red light / green light.

Here, an electron transport layer (ETL), a hole transport layer (HTL), etc. may be further included above and below the blue light emitting layer 370B, and various modifications may be made to the arrangement and structure thereof.

As described above, the back light emitting structure is illustrated and described in FIGS. 4 to 6, but the present invention is not limited thereto, and various modifications may be made to the arrangement and structure according to the front light emitting structure.

In addition, although two types of driving methods are illustrated and described with respect to the color image implementation method, the present invention is not limited thereto, and various modifications may be made as necessary.

Hereinafter, a hierarchical structure of an organic light emitting diode according to an embodiment of the present invention will be described.

7 is a hierarchical structure diagram of an organic light emitting diode according to an embodiment of the present invention.

Referring to FIG. 7, an organic light emitting diode according to an embodiment of the present invention includes a first injection hole 160 and a hole injection layer 171 and a hole transport layer 172 positioned on the first electrode 160. ), An emission layer 170, an electron transport layer 173, an electron injection layer 174, and a second electrode 180 positioned on the electron injection layer 174.

The hole injection layer 171 is positioned on the first electrode 160. The hole injection layer 171 may play a role of smoothly injecting holes from the first electrode 160 to the light emitting layer 170, CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline) and NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine) may be made of any one or more selected from the group consisting of, but is not limited thereto.

The hole injection layer 171 described above may be formed using an evaporation method or a spin coating method.

The hole transport layer 172 serves to facilitate the transport of holes, NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis- (3-methylphenyl) -N , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It may be made of one or more, but is not limited thereto.

The hole transport layer 172 may be formed using an evaporation method or a spin coating method. The light emitting layer 170 described above may be formed of a material emitting red, green, blue, and white light, and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 170 is red, it includes a host material including CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl), and PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate Phosphorescent light containing a dopant including any one or more selected from the group consisting of iridium), PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) It may be made of a material, alternatively may be made of a fluorescent material including PBD: Eu (DBM) 3 (Phen) or perylene, but is not limited thereto.

When the light emitting layer 170 is green, it may include a host material including CBP or mCP, and may be made of a phosphor including a dopant material including Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium). Alternatively, the composition may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the light emitting layer 170 is blue, the light emitting layer 170 may include a host material including CBP or mCP, and may be made of a phosphor including a dopant material including (4,6-F2ppy) 2Irpic.

Alternatively, it may be made of a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distilbenzene (DSB), distriarylene (DSA), PFO-based polymer and PPV-based polymer, but It is not limited.

Here, the electron transport layer 173 serves to facilitate the transport of electrons, at least one selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq and SAlq. It may be, but is not limited to.

The electron transport layer 173 may be formed using an evaporation method or a spin coating method. The electron transport layer 173 may also prevent the holes injected from the first electrode from moving through the light emitting layer to the second electrode. In other words, it may serve as a hole blocking layer to efficiently bond holes and electrons in the emission layer.

Here, the electron injection layer 174 serves to facilitate the injection of electrons, Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq may be used, but is not limited thereto. .

The electron injection layer 174 may form an organic material and an inorganic material constituting the electron injection layer by vacuum deposition.

The hole injection layer 171 or the electron injection layer 174 may further include an inorganic material, and the inorganic material may further include a metal compound. The metal compound may include an alkali metal or an alkaline earth metal. Metal compound including an alkali metal or alkaline earth metal LiQ, LiF, NaF, KF, RbF, CsF, FrF, BeF 2, MgF 2, CaF 2, SrF 2, BaF any one selected from the group consisting of ₂ and RaF ₂ or more But it is not limited thereto.

In other words, the inorganic material in the electron injection layer 174 facilitates hopping of electrons injected from the second electrode 180 into the light emitting layer 170, thereby achieving a luminous efficiency by balancing the holes and electrons injected into the light emitting layer. Can be improved.

In addition, the inorganic material in the hole injection layer 171 reduces the mobility of holes injected from the first electrode 160 to the light emitting layer 170, thereby improving the light emission efficiency by balancing the holes and electrons injected into the light emitting layer 170. You can.

The present invention is not limited to FIG. 4, and at least one of the electron injection layer 174, the electron transport layer 173, the hole transport layer 172, and the hole injection layer 171 may be omitted.

One embodiment of the present invention has the effect of solving the problem that the contrast of the panel is lowered by omitting the reflective member that was used in the lower portion of the first electrode in order to solve the problem of the external light. In addition, since the circular polarizer does not need to be applied, the structure of the transistor unit is kept simple, thereby simplifying the process, reducing the cost, and improving the production yield.

In particular, an embodiment of the present invention can form an opaque resin film that acts as a black matrix on the transistor unit without additional processing, thereby preventing display problems in the active layer and the like, thereby improving display quality. There is. In addition, since the opaque resin film can serve as a flattening film or a passivation film and a black matrix, it is possible to prevent a problem of lowering the aperture ratio and to add a compensation transistor to the space of the transistor section, thereby extending the lifespan and pixel uniformity of the device. There is an effect that can be improved.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the technical configuration of the present invention described above may be modified in other specific forms by those skilled in the art to which the present invention pertains without changing its technical spirit or essential features. It will be appreciated that it may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 is a schematic plan view of an organic light emitting display device according to an embodiment of the present invention;

FIG. 2 is an exemplary circuit diagram of a subpixel illustrated in FIG. 1. FIG.

3A and 3B illustrate cross-sectional views of subpixels according to an exemplary embodiment of the present invention.

4 to 6 are views illustrating embodiments of implementing a color image in an organic light emitting display device according to an embodiment of the present invention.

7 is a hierarchical structure diagram of an organic light emitting diode according to an embodiment of the present invention.

<Explanation of symbols on main parts of the drawings>

110: substrate 105: buffer layer

115: first insulating film 120: active layer

130: second insulating film 140: opaque resin film

145: bank layer 160: first electrode

170: light emitting layer 180: second electrode

190: sealing substrate

Claims (6)

Board; A transistor unit including an active layer, a gate, a source, and a drain disposed on the substrate; An opaque resin film disposed on the transistor unit and exposing the source or the drain; A first electrode on the opaque resin film and connected to the source or the drain; A bank layer disposed on the opaque resin film and having an opening exposing a portion of the first electrode; A light emitting layer on the first electrode exposed through the opening; And An organic light emitting display device comprising a second electrode on the light emitting layer. The method of claim 1, The opaque resin film, An organic light emitting display device comprising a resin having light blocking properties. The method of claim 1, The opaque resin film, An organic light emitting display device having a black color. The method of claim 1, A scan line on the substrate and connected to the gate and a data line connected to the source or the drain, The opaque resin film covers the scan line and the data line. The method of claim 1, The transistor unit, The gate positioned on the substrate, the first insulating layer positioned on the gate, the active layer positioned on the first insulating layer, and the first insulating layer positioned on and in contact with the active layer, respectively. A source and the drain, and a second insulating layer on the source and the drain and exposing the source or the drain, And the opaque resin film is disposed on the second insulating film to expose the source or the drain. The method of claim 1, The transistor unit, The active layer on the substrate, a first insulating layer on the active layer, the gate on the first insulating layer, a second insulating layer on the gate, and the second insulating layer The source and the drain disposed on and in contact with the active layer, and a third insulating layer disposed on the source and the drain and exposing the source or the drain, And the opaque resin film is disposed on the third insulating film and exposes the source or the drain.

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