KR101471221B1 - 표시 장치 및 표시 장치의 제조 방법 - Google Patents

표시 장치 및 표시 장치의 제조 방법 Download PDF

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Publication number
KR101471221B1
KR101471221B1 KR1020097019412A KR20097019412A KR101471221B1 KR 101471221 B1 KR101471221 B1 KR 101471221B1 KR 1020097019412 A KR1020097019412 A KR 1020097019412A KR 20097019412 A KR20097019412 A KR 20097019412A KR 101471221 B1 KR101471221 B1 KR 101471221B1
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South Korea
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active layer
layer
gate electrode
photoelectric conversion
substrate
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Expired - Fee Related
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Korean (ko)
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KR20100057528A (ko
Inventor
다람 팔 고사인
쯔또무 다나까
마꼬또 다까또꾸
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재팬 디스프레이 웨스트 인코포레이트
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G06F3/0421—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means by interrupting or reflecting a light beam, e.g. optical touch-screen
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Human Computer Interaction (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Position Input By Displaying (AREA)
  • Light Receiving Elements (AREA)
KR1020097019412A 2007-09-21 2008-09-18 표시 장치 및 표시 장치의 제조 방법 Expired - Fee Related KR101471221B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2007-244880 2007-09-21
JP2007244880 2007-09-21
JPJP-P-2008-216975 2008-08-26
JP2008216975A JP5567770B2 (ja) 2007-09-21 2008-08-26 表示装置及び表示装置の製造方法

Publications (2)

Publication Number Publication Date
KR20100057528A KR20100057528A (ko) 2010-05-31
KR101471221B1 true KR101471221B1 (ko) 2014-12-09

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KR1020097019412A Expired - Fee Related KR101471221B1 (ko) 2007-09-21 2008-09-18 표시 장치 및 표시 장치의 제조 방법

Country Status (5)

Country Link
US (1) US8619208B2 (https=)
JP (1) JP5567770B2 (https=)
KR (1) KR101471221B1 (https=)
CN (1) CN101636691B (https=)
TW (1) TWI482134B (https=)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8945981B2 (en) 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI495108B (zh) * 2008-07-31 2015-08-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
WO2010131502A1 (ja) * 2009-05-12 2010-11-18 シャープ株式会社 薄膜トランジスタおよびその製造方法
TWI650848B (zh) * 2009-08-07 2019-02-11 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
TWI498786B (zh) 2009-08-24 2015-09-01 Semiconductor Energy Lab 觸控感應器及其驅動方法與顯示裝置
WO2011027702A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
WO2011045956A1 (ja) * 2009-10-16 2011-04-21 シャープ株式会社 半導体装置、それを備えた表示装置、および半導体装置の製造方法
KR101727469B1 (ko) 2009-11-06 2017-04-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101333783B1 (ko) 2009-11-10 2013-11-29 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
TW201732525A (zh) * 2010-03-08 2017-09-16 半導體能源研究所股份有限公司 電子裝置及電子系統
KR101706291B1 (ko) * 2010-03-11 2017-02-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011135920A1 (ja) * 2010-04-30 2011-11-03 シャープ株式会社 回路基板、表示装置および回路基板の製造方法
KR101343293B1 (ko) * 2010-04-30 2013-12-18 샤프 가부시키가이샤 회로 기판 및 표시 장치
TWI436137B (zh) * 2010-06-15 2014-05-01 Ind Tech Res Inst 主動式光感測畫素、主動式光感測陣列以及光感測方法
CN102376276B (zh) * 2010-08-05 2013-11-20 财团法人工业技术研究院 主动式光感测像素、主动式光感测阵列以及光感测方法
KR101822406B1 (ko) 2011-08-29 2018-01-29 삼성디스플레이 주식회사 터치 기판 및 이의 제조 방법
KR101506303B1 (ko) 2011-09-29 2015-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
JP2014116429A (ja) * 2012-12-07 2014-06-26 Japan Display Inc 撮像装置及び撮像表示システム
KR102068275B1 (ko) 2012-12-20 2020-01-21 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR102091444B1 (ko) * 2013-10-08 2020-03-23 삼성디스플레이 주식회사 표시 기판 및 표시 기판의 제조 방법
US10325937B2 (en) 2014-02-24 2019-06-18 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
US10186528B2 (en) 2014-02-24 2019-01-22 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
US9721973B2 (en) 2014-02-24 2017-08-01 Lg Display Co., Ltd. Thin film transistor substrate and display using the same
EP2911200B1 (en) 2014-02-24 2020-06-03 LG Display Co., Ltd. Thin film transistor substrate and display using the same
JP2015158572A (ja) * 2014-02-24 2015-09-03 株式会社Ｊｏｌｅｄ 表示装置、電子機器
US10985196B2 (en) 2014-02-24 2021-04-20 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911202B1 (en) 2014-02-24 2019-02-20 LG Display Co., Ltd. Thin film transistor substrate and display using the same
US9214508B2 (en) 2014-02-24 2015-12-15 Lg Display Co., Ltd. Thin film transistor substrate with intermediate insulating layer and display using the same
EP2911199B1 (en) 2014-02-24 2020-05-06 LG Display Co., Ltd. Thin film transistor substrate and display using the same
CN104716196B (zh) * 2015-03-18 2017-08-08 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板及显示装置
CN105244404B (zh) * 2015-10-19 2018-02-06 昆山龙腾光电有限公司 集成光电传感器
CN106326845B (zh) * 2016-08-15 2017-08-11 京东方科技集团股份有限公司 指纹识别单元及制作方法、阵列基板、显示装置及指纹识别方法
CN107946244B (zh) * 2017-11-22 2020-08-04 深圳市华星光电半导体显示技术有限公司 一种阵列基板及其制备方法
US10367017B2 (en) * 2017-11-22 2019-07-30 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Array substrate and manufacturing method thereof
CN107978610B (zh) * 2017-11-30 2020-04-24 上海天马微电子有限公司 一种阵列基板、显示面板、显示装置及阵列基板的制造方法
TWI721776B (zh) * 2020-02-06 2021-03-11 友達光電股份有限公司 主動元件基板及其製造方法
CN111522181B (zh) * 2020-04-27 2023-05-05 深圳市华星光电半导体显示技术有限公司 一种阵列基板、显示面板及其制备方法
KR102849288B1 (ko) * 2020-06-01 2025-08-22 삼성전자주식회사 플래시 led 패키지
CN112599630B (zh) 2020-12-07 2022-06-10 Tcl华星光电技术有限公司 光传感器和显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1090655A (ja) * 1996-09-17 1998-04-10 Toshiba Corp 表示装置
US20030122165A1 (en) * 2000-08-31 2003-07-03 Lg.Philips Lcd Co., Ltd. TFT type optical detecting sensor implementing different TFTs and the fabricating method thereof
JP2005043672A (ja) * 2003-07-22 2005-02-17 Toshiba Matsushita Display Technology Co Ltd アレイ基板およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6362507B1 (en) * 1999-04-20 2002-03-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical devices in which pixel section and the driver circuit are disposed over the same substrate
US7385223B2 (en) * 2003-04-24 2008-06-10 Samsung Sdi Co., Ltd. Flat panel display with thin film transistor
KR100585410B1 (ko) * 2003-11-11 2006-06-07 엘지.필립스 엘시디 주식회사 구동회로 일체형 액정표시장치의 스위칭 소자 및 구동소자및 그 제조방법
KR100685239B1 (ko) * 2004-01-29 2007-02-22 가시오게산키 가부시키가이샤 트랜지스터어레이 및 그 제조방법 및 화상처리장치
EP1739000B1 (en) 2005-06-27 2011-08-10 Campagnolo S.R.L. Control device for a bicycle derailleur

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1090655A (ja) * 1996-09-17 1998-04-10 Toshiba Corp 表示装置
US20030122165A1 (en) * 2000-08-31 2003-07-03 Lg.Philips Lcd Co., Ltd. TFT type optical detecting sensor implementing different TFTs and the fabricating method thereof
JP2005043672A (ja) * 2003-07-22 2005-02-17 Toshiba Matsushita Display Technology Co Ltd アレイ基板およびその製造方法

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Publication number Publication date
TW200929119A (en) 2009-07-01
CN101636691A (zh) 2010-01-27
KR20100057528A (ko) 2010-05-31
JP2009093154A (ja) 2009-04-30
CN101636691B (zh) 2014-05-07
JP5567770B2 (ja) 2014-08-06
US8619208B2 (en) 2013-12-31
US20100171120A1 (en) 2010-07-08
TWI482134B (zh) 2015-04-21

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