Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art, and the following embodiments may be modified in various other forms, The present invention is not limited to the following embodiments. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art.
1 is a cross-sectional view showing a substrate 1 in a semiconductor package according to some embodiments of the present invention.
1, the substrate 1 includes a base 10, a wireless power supply 30, and a thermal power supply 70. Further, the substrate 1 may further include a heat sink (90). The base portion 10 includes a first side 12 and a second side 14 opposite the first side 12. The wiring 16 may be located on the first side 12. The wireless power supply unit 30 may be positioned on a partial area of the first surface 12 and the mounting area 18 where the semiconductor chips are mounted may be located. The wireless power supply unit 30 and the mounting area 18 can be electrically connected by the wiring 16. [ On the second side 14, the entire heat 70 can be located. The thermal fronts 70 may be glued onto the second side 14 using an adhesive layer 76. The adhesive layer 76 may be a solder, a metal epoxy, a metal paste, a resin-based epoxy, or an adhesive tape excellent in heat resistance. The heat sink 90 can be positioned at the lower side of the heat sink 70, that is, at a position facing the base 10.
The base 10 may include an epoxy resin, a polyimide resin, a bismaleimide triazine (BT) resin, FR-4 (Flame Retardant 4), FR-5, ceramic, silicone, or glass, And the present invention is not limited thereto. The base 10 may be a single layer or may include a multi-layer structure including wiring patterns therein. For example, the base 10 may be a rigid flat plate, a plurality of rigid flat plates adhered to each other, or a thin flexible printed circuit board and a rigid flat plate adhered to each other. The plurality of rigid flat plates, or the printed circuit boards, which are adhered to each other, may each include a wiring pattern. The base 10 may also be a low temperature co-fired ceramic (LTCC) substrate. The LTCC substrate may include a plurality of ceramic layers stacked, and may include a wiring pattern therein.
The wireless power supply unit 30 can receive power signals from the outside wirelessly and supply power to the semiconductor chips mounted on the base unit 10 and the mounting area 18. [ The wireless power supply unit 30 may be a radio frequency (RF) wave or a radiative system using ultrasound waves, an inductive coupling system using magnetic induction, or a non-radiative type using magnetic resonance non-radiative manner.
The radial method is a method of wirelessly transmitting energy using an antenna such as monopole or planar inverted-F (PIFA) antenna. When an electric field or a magnetic field which changes with time influences each other, radiation occurs, and when there is an antenna of the same frequency, power can be received in accordance with the polarization characteristic of the incident wave.
Inductive coupling is a method in which a coil is wound several times to generate a strong magnetic field in one direction and a coil that resonates at a similar frequency is brought close to generate coupling.
The non-radiative method uses a evanescent wave coupling that moves electromagnetic waves between two mediums that resonate at the same frequency through a near field.
The wireless power supply unit 30 may include a power transmission unit 200 or a power reception unit 300. That is, when the substrate 1 supplies wireless power to a semiconductor chip (not shown), the substrate 1 includes a power transmission unit 200, and when the substrate 1 is supplied with wireless power, And a power receiving unit 300. The power transmission unit 200 and the power reception unit 300 will be described with reference to FIG. 4 and FIG.
Although not shown in the drawings, the wireless power supply unit 30 may be implemented in a semiconductor chip (not shown) mounted on the substrate 1. [ In this case, the semiconductor chip may include another wireless power supply unit that receives wireless power from the power transmission unit 200 of the wireless power supply unit 30 of the substrate 1. This will be described in Fig. 6 and Fig. Similarly, the wireless power supply unit 30 may be implemented in a thermoelectric element (not shown) mounted on the substrate 1, which will be described with reference to FIG.
The thermoelectric module 70 includes a thermoelectric module 72 and a thermoelectric module wireless power unit 74. The thermoelectric module 72 may receive electric power from the thermoelectric module wireless power supply unit 74 to generate a heat flow. The thermoelectric module wireless power supply unit 74 may be similar to the configuration of the power receiving unit 300 of the wireless power supply unit 30 described above. The heat generated by the operation of the semiconductor chip or the like mounted on the base 10 by the thermoelectric module 72 can be released to the outside through the thermoelectric module 72 and the heat sink 90. [ The thermoelectric module 72 will be described in detail below with reference to FIGS. 2 to 4. FIG.
The heat sink 90 may include a metal, a metal nitride, a ceramic, a resin, or a combination thereof. For example, the heat sink 90 is aluminum, aluminum alloy, copper, copper alloys, aluminum oxide (Al 2 O 3), beryllium oxide (BeO), aluminum nitride (AlN), silicon nitride (SiN), an epoxy resin , Or a combination thereof. In addition, the heat sink 90 can have various dimensions and shapes for more effective heat radiation. The heat sink 90 can be attached to the heat sink 70 by solder, metal epoxy, metal paste, resin epoxy, or adhesive tape (not shown) having excellent heat resistance. The adhesive tape may be a commercially available high-temperature tape such as a known glass tape, a silicone tape, a Teflon tape, a stainless steel foil tape, a ceramic tape, or the like, and may be a tape containing aluminum oxide, aluminum nitride, silicon oxide, It is possible. The solder may also include metals such as lead (Pb), lead / tin (Pb / Sn), tin / silver (Sn / Ag), lead / tin / silver (Pb / Sn / Ag)
Fig. 2 is a schematic view for explaining the operation principle of the thermoelectric module 72 of Fig.
Referring to FIG. 2, the thermoelectric module 72 is electrically connected to the n-type impurity element 721 and the p-type impurity element 722. The n-type impurity element 721 and the p-type impurity element 722 are electrically connected to each other by an upper conductive member 725 at an upper portion thereof, spaced apart from each other at a lower portion thereof, And is connected to the power source 190. Insulating members 727 and 728 such as ceramics are formed on the upper side and the lower side of the upper conductive member 725 and the lower conductive member 726 opposite to the n-type impurity element 721 and the p-type impurity element 722, Respectively. The n-type impurity element 721 is configured to further include an n-type impurity in the medium such as silicon or silicon-germanium. Such n-type impurities may be selected from nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), sulfur (S), selenium (Se), tellurium (Te) Po). ≪ / RTI > The p-type impurity element 722 is further configured to include a p-type impurity in the medium such as silicon or silicon-germanium. The p-type impurity may be one of boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), zinc (Zn), cadmium (Cd) Or more. In addition, the n-type impurity element 721 and the p-type impurity element 722 can be constituted by using commercially available bismuth telluride (Bi 2 Te 3 ) or tellurium lead (PbTe).
When a direct current is applied to the n-type impurity element 721 and the p-type impurity element 722 by the thermoelectric module wireless power supply 74, the electrons move in the opposite direction with respect to the direction of current flow, Move in the same direction. Thus, in the n-type impurity element 721, the main carriers are electrons, and the electrons flow from the region in the downward direction opposite to the direction of the current, that is, from the region adjacent to the upper conductive member 725 to the region adjacent to the lower conductive member 726 Move. On the other hand, in the p-type impurity element 722, the main carrier is a hole, and the holes are moved from a region in the downward direction, that is, in the same direction as the direction of the current to a region adjacent to the upper conductive member 725 to a region adjacent to the lower conductive member 726 Move. As a result, the direction of movement of the electrons and the holes is the same. Due to the applied direct current, the electrons and the holes become mediums for transferring heat, and the direction of heat transfer is the same as the arrow shown. As described above, when a current is applied across different solids or semiconductors, a phenomenon in which a heat generation or an endotherm different from joule heat occurs is called a Peltier effect. Typically, this Peltier effect refers to the movement of heat as a function of the current flow when other materials, such as metals and semiconductors, form junctions with each other. In other words, in the process of absorbing the energy to move the free electrons moving by the electromotive force to the higher Fermi energy level, the heat is absorbed constantly on the side where electrons are emitted by absorbing the most easily obtainable heat energy, Heat is released continuously. 2, the n-type impurity element 721 forms a junction with the upper conductive member 725 and the lower conductive member 726 and the p-type impurity element 722 forms a junction with the upper conductive member 725, And the lower conductive member 726 are formed. As a result, the upper conductive member 725 becomes a low-temperature portion and the lower conductive member 726 becomes a high-temperature portion due to the heat transmission as described above.
1, the base portion 10 is located on the upper conductive member 725 and the heat generated by the operation of the semiconductor chip or the like mounted on the base portion 10 causes the n-type impurity element 721 and the p-type impurity element 722 toward the lower conductive member 726, and is then discharged to the outside.
The thermoelectric module 72 has the following advantages. Firstly, since it does not require a mechanical device for operation, it is easy to handle, can be reduced in size and weight, can be freely deformed in shape, has no vibration or noise, has a long life and has high reliability. It is possible. Secondly, it is possible to easily replace the cooling region and the heating region as the current direction is changed, excellent temperature responsiveness, and temperature control at room temperature is possible. Third, it does not use refrigerant like CFC, so it is environment-friendly and has excellent durability.
3 is a perspective view schematically showing an example of the thermoelectric module 72 of FIG.
3, the thermoelectric module 72 includes an impurity element array 723, conductive members 725 and 726, a power wiring 729, and insulating members 727 and 728. A plurality of n-type impurity elements 721 and a plurality of p-type impurity elements 722 are alternately arranged in the impurity element arrangement portion 723 as described in Fig. The plurality of conductive members 725 and 726 include upper conductive members 725 and lower conductive members 726 located on the upper side and the lower side of the impurity element array, respectively. The plurality of conductive members 725 and 726 electrically connect the plurality of n-type impurity elements 721 and the plurality of p-type impurity elements 722 electrically in series. The plurality of conductive members 725 and 726 may comprise aluminum, an aluminum alloy, copper, a copper alloy, nickel, a nickel alloy, or a combination thereof. The power wiring 729 is electrically connected to the thermoelectric module wireless power supply unit 74 and electrically connected to a part of the conductive members 725 and 726 to electrically connect the impurity element arrangement portion 723, respectively. The insulating members 727 and 728 are attached to the upper and lower sides of the plurality of conductive members 725 and 726 facing the impurity element array 723, respectively. With this configuration, the direct current applied through the power wiring 729 alternately passes through the n-type impurity elements 721 and the p-type impurity elements 722. [ As a result, the Peltier effect as described above with reference to FIG. 2 transfers heat from the upper conductive members 725 toward the lower conductive members 726, resulting in discharge to the outside.
4 is a block diagram specifically illustrating a power transmission unit of the wireless power supply unit 30 of the substrate 1 according to some embodiments of the present invention. The wireless power supply unit 30 according to this embodiment specifically shows the power transmission unit of the wireless power supply unit 30 of the board 1 of FIG. The following description will not be repeated.
The power transmission unit 200 of the wireless power supply unit 30 of the substrate 1 includes a power supply unit 210, a high frequency power drive unit 220, a first detection unit 230, a first power control unit 240, ). The power transmission section 200 may be implemented not only in the substrate 1 but also in the semiconductor chip 410 (see FIG. 6) mounted on the substrate 1. As shown in FIG.
The power supply unit 210 may receive a commercial current such as an AC current and convert it into a DC current and supply operating power to the first power control unit 240 and the RF power driving unit 220.
The high-frequency power driving unit 220 may apply a high-frequency alternating current to the power transmitting unit 250. For example, the high-frequency power driver 220 may include a switching mode power supply (SMPS) that generates the high-frequency alternating current through a high-speed switching operation.
The first detector 230 continuously measures voltage and current values supplied from the high frequency power driver 220 to the power transmitter 250 and transmits the voltage and current value information to the first power controller 240. For example, the first detection unit 230 may be a circuit including a resistance element capable of directly measuring the voltage and current values.
The first power control unit 240 may be configured to control the overall operation of the power transmission unit 200. More specifically, the first power controller 240 can receive the voltage and current values from the first detector 230 and control the driving of the high-frequency power driver 220.
More specifically, the first power controller 240 controls the high-frequency power driver 220 to modulate the width, amplitude, frequenct, and number of pulses of the high-frequency pulse, can do. By using the pulse width modulation (PWM), pulse amplitude modulation (PAM), pulse frequency modulation (PFM), pulse number modulation (PNM) 1 power control unit 240 can adjust the power of the high frequency alternating current.
The power transmitting terminal 250 may be configured to receive a high frequency alternating current from the high frequency power driving unit 220 and to transmit wireless energy to a power receiving terminal (310 in FIG. 5).
In the case of the radial system, that is, when the radio power source unit 30 uses radio frequency waves or ultrasonic waves, the power transmitter unit 250 of the radio power source unit 30 may be a monopole or planar inverted-F antenna Antenna. The antenna generates an electromagnetic wave in accordance with a high-frequency current, and the antenna of the power receiving terminal (310 in FIG. 5) generates the high-frequency current from the electromagnetic wave by receiving the electromagnetic wave.
In the case of the inductive coupling system, that is, when the radio power source unit 30 uses magnetic induction, the power transmitting terminal 250 of the radio power source unit 30 may include a coil. According to the electromagnetic induction principle, when a high frequency current is applied, the coil generates a magnetic field, and the coil of the power receiving terminal (310 of FIG. 5) generates a high frequency current from the magnetic field.
In the case of the non-radiation type, that is, when the wireless power supply unit 30 uses the magnetic field resonance, the wireless power supply unit 30 may include a resonator that generates an evanescent wave. The attenuation wave produces a steel sheet field in a short distance and the intensity decreases exponentially as the distance increases. The resonator of the power transmitter 250 may resonate at the same frequency as that of the resonator of the power receiver 310. In this case, a near field, which is a kind of energy tunnel, may be formed between the two resonators. When a high frequency current is applied, the resonator of the power transmitting terminal 250 generates a damping wave, and the damping wave can be transmitted from the resonator of the power transmitting terminal 250 to the resonator of the power receiving terminal 310 (FIG. 5) .
5 is a block diagram specifically illustrating a power receiving unit of the wireless power supply unit 30 of the substrate 1 according to some embodiments of the present invention. The wireless power supply unit 30 according to this embodiment specifically shows a power receiving unit of the wireless power supply unit 30 of the substrate 1 of FIG. The following description will not be repeated.
The power receiving unit 300 of the wireless power supply unit 30 of the substrate 1 includes a power receiving unit 310, a power converting unit 320, a second detecting unit 330, a second power controlling unit 340, 350).
The power receiving end 310 may be configured to receive wireless energy from the power transmitting end 250 of the power transmitting unit 200 and to convert the wireless energy into a high frequency alternating current. As described above, the power receiving end 310 may include an antenna, a coil, or a resonator according to the transmission mode of the wireless energy.
The power conversion unit 320 may be configured to convert a high frequency alternating current into a direct current. More specifically, the power converting section 320 may include a voltage limiting circuit and a rectifying circuit. The voltage limiting circuit may be configured to prevent the high frequency alternating current from being overpowered. The voltage limited by the voltage limiting circuit may be rectified to a direct current by the rectifying circuit. The DC current converted by the power conversion unit 320 may be transmitted to the power storage unit 350 and the second power control unit 340.
The power storage unit 350 may include a power storage element such as a capacitor and may be connected to an external circuit through terminals of the connection unit 360. [
The second detector 330 continuously measures voltage and current values supplied from the power converter 320 to the power storage unit 350 and transmits the voltage and current value information to the second power controller 340 . For example, the second detection unit 330 may be a circuit including a resistance element capable of directly measuring the voltage and current values.
The second power control unit 340 may be configured to control the overall operation of the power receiving unit 300. The second power control unit 340 can be operated by the DC current delivered by the power conversion unit 320. [ The second power control unit 340 receives the voltage and current values from the second detection unit 330 and can control the driving of the power conversion unit 320. For example, the second power control unit 340 may compare the voltage and current measured by the second detecting unit 330 with the (preset) comparison voltage and the comparison current, It is possible to control the driving of the power converter 320 so that overvoltage / overcurrent of the power converter 350 is not generated.
Although the power receiving unit 300 is shown as including the power storage unit 350 in the drawing, the power converting unit 320 may be directly connected to the connecting unit 360. In this case, The voltage and current values supplied from the converting unit 320 to the connection unit 360 may be measured and the voltage and current information may be transmitted to the second power control unit 340.
6 schematically illustrates a semiconductor package according to some embodiments of the present invention. The semiconductor package according to this embodiment may include the substrate 1 of FIG. 1, the power receiver 300 of the wireless power supply 30 of FIGS. 4 and 5, and the power transmitter 200. The following description will not be repeated.
6, the semiconductor package includes a substrate 1, at least one semiconductor chip 410 mounted on the substrate 1, and a sealing material 420 for sealing the substrate 1 and the semiconductor chip 410. [ . ≪ / RTI > The power transmission unit 200 may be implemented in the substrate 1 and the power reception unit 300 may be implemented in the semiconductor chip 410. Therefore, power can be transmitted wirelessly without connecting the semiconductor chip 410 and the substrate 1 by wire bonding, flip chip bonding, or the like.
The power transmission unit 200 implemented in the substrate 1 and the power reception unit 300 implemented in the semiconductor chip 410 may be aligned with each other. More specifically, the antenna, the coil, and the resonator, which are the power transmitter 250 of the power transmitter 200, and the antenna, the coil, and the resonator, which are the power receiver 310 of the power receiver 300, may be aligned with each other. In this case, the power receiving end 310 and the power transmitting end 250 may be aligned along a first reference line R1 in a direction perpendicular to the substrate 1.
Power loss can be prevented through the alignment of the power transmitting terminal 250 and the power receiving terminal 310. In the case of the radial transmission method, the shortest electromagnetic wave transmission distance can be realized between the antennas, so that power loss can be prevented. In the case of the induction coupling method, the maximum magnetic flux is coupled between the coils, thereby also preventing power loss. Likewise, the non-radiation method can also prevent power loss by preventing the loss of the attenuating wave whose intensity decreases exponentially.
7 schematically illustrates a semiconductor package according to another embodiment of the present invention. The semiconductor package according to this embodiment is a modification of the semiconductor package shown in Fig. The following description will not be repeated.
Referring to FIG. 7, the semiconductor package may include a first substrate 1a, a second substrate 1b, a semiconductor chip 410, and an encapsulant 420.
The first substrate 1a may include a first power transmitter 200a. The second substrate 1b may include a second power transmitter 200b. The second substrate 1b may be arranged to face the first substrate 1a. The first power transmission part 200a in the first substrate 1a and the second power transmission part 200b in the second substrate 1b are connected in parallel to the first substrate 1a or the second substrate 1b, Can be aligned with each other along the reference line R2.
The semiconductor chip 410 may be positioned between the first substrate 1a and the second substrate 1b. The semiconductor chip 410 may include a power receiving unit 300. The power receiving unit 300 implemented in the semiconductor chip 410 may be aligned with the first power transmitting unit 200 and the second power transmitting unit 200. More specifically, the first power transmitting end 250a, the second power transmitting end 250b, and the power receiving end 300 may be aligned with each other along a second reference line R2 in a direction perpendicular to the substrate 1. [
The encapsulant 420 may encapsulate the first substrate 1a, the second substrate 1b, and the semiconductor chip 410.
Generally, as the distance from the power transmitter 200 to the power receiver 300 increases, the intensity of electromagnetic waves, the number of magnetic fluxes, and the intensity of attenuation are decreased. The first power transmission unit 200a and the second power transmission unit 200b are implemented on the upper and lower sides of the semiconductor chip 410. The power transmission units 200a and 200b between the semiconductor chips 410, The difference in the intensity of the electromagnetic waves, the difference in the number of the magnetic fluxes, and the difference in intensity of the attenuation wave between the first and second antennas 300 can be prevented. Thus, uniform wireless power can be supplied to each semiconductor chip 410. [
8 schematically illustrates a semiconductor package having optical communication functionality according to some embodiments of the present invention.
Referring to FIG. 8, a semiconductor package 1000 includes a substrate 1 and a semiconductor chip 410. The substrate 10 may include a light emitting portion 42S, a light receiving portion 42R, a light emission driving portion 44S, a detecting portion 44R, and a transmission / reception control portion 46 for optical communication with the semiconductor chip 410. In addition, the substrate 10 may further include an interface unit 48 for transmitting and receiving data between the semiconductor package 1000 and the host.
The semiconductor chip 410 includes a light emitting portion 112S, a light receiving portion 112R, a light emitting driving portion 114S, a detecting portion 114R and a transmitting / receiving controlling portion 46 for optical communication with the substrate 10. In addition, the semiconductor chip 410 may further include an integrated circuit 119 required for the function of the semiconductor package 1000.
The interface unit 48 is provided for data communication between the semiconductor package 1000 and the host and provides a control command from the host to the transmission / reception control unit 46 and transmits data from the semiconductor chip 410 to the transmission / To the outside.
The transmission / reception control unit 46 may be connected to the interface unit 48 to perform control commands from the host to the semiconductor chip 410 or to transmit the control commands to the transmission / reception control unit 116 of the semiconductor chip 410. The transmission / reception control unit 46 processes data to transmit / receive data through optical communication, and controls the light emission driving unit 44S and the detection unit 44R. The transmission / reception control unit 46 may encode control commands input from the interface unit 48 and provide it to the light emission driving unit 44S. In addition, the transmission / reception control unit 46 may decode the data provided from the detection unit 44R and provide the decoded data to the interface unit 48. [
The light emission driving unit 44S may generate a driving signal for driving the light emitting unit 42S according to data provided from the transmission / reception control unit 46. [ The data may be encoded data. For example, in the case where the data value is 0, the light emission driving part 44S prevents the current from flowing to the light emitting part 42S, and when the data value is 1, the current flows through the light emitting part 42S so that the light emitting part 42S It is possible to output an optical signal. Alternatively, it may be operated on the contrary. In addition, the light emission driver 44S may have a plurality of analog outputs capable of expressing a plurality of bits. For example, in order to express 4 bits, the light emission driving part 44S can output twenty four different currents so that the current of 24 analog values flows in the light emitting part 42S.
The light emitting portion 42S can output an optical signal according to a driving signal from the light emission driving portion 44S. The light emitting portion 42S may be a visible light LED or a laser diode capable of outputting visible light, or may be an infrared LED capable of outputting infrared light. And the output visible light or infrared light reaches the light receiving portion 112R of the semiconductor chip 410. [
The light emitting portion 42S may be composed of light emitting sources having a plurality of distinguishable wavelengths. For example, the light emitting unit 42S includes an infrared LED, a red LED, a green LED, and a blue LED, and can output a plurality of optical signals through one optical path. In this case, the light receiving portion 112R of the semiconductor chip 410 may be formed of the same number of light receiving elements to receive light of the corresponding wavelength. In addition, an optical filter for passing only the light of the wavelength corresponding to the light receiving elements may be disposed at the front end of the light receiving elements.
The light receiving portion 42R can receive optical signals provided from the light emitting portion 112S of the semiconductor chip 410. [ For example, the light receiving unit 42R may include a photodiode that receives light emitted from the light emitting unit 112S and converts the light into a current. As described above, when the light emitting portion 112S is composed of a plurality of light emitting elements that output light of a plurality of different wavelengths, the light receiving portion 42R may be formed of the same number of light receiving elements.
The detection unit 44R can convert the currents output from the light receiving unit 42R into digital values and provide the digital values to the transmission / reception control unit 46. [ For example, when the light emitting portion 112S emits light according to the data bit value of 1, the light receiving portion 42R will receive light and output a current, and the detecting portion detects the output current, It is possible to detect that the value of the data bit output by the bit- For example, when the light emitting portion 112S outputs a quantized optical signal for transmitting a plurality of bits, the detecting portion 44R may include an analog-to-digital converter of the same bit to detect them.
The transmission / reception control unit 46 may process the received digital values and provide the digital values to the interface unit 48.
The semiconductor chip 410 includes the necessary integrated circuit 119 according to the purpose and function of the semiconductor package 1000. For example, the integrated circuit 119 may include circuitry such as a DRAM circuit, a flash memory circuit, and / or a logic circuit. The integrated circuit 119 may include wirings for inputting / outputting data to / from the integrated circuit 119. The wirings may be connected to the transmission / reception control unit 116. The integrated circuit 119 of the semiconductor chip 410 may include a transmission / reception control unit 116.
The transmission / reception control unit 116 may process data to input data to the integrated circuit 119 or control the integrated circuit 119 in accordance with a control command. The transmission / reception control unit 116 may receive the result data from the integrated circuit 119 or may receive the status signal indicating the status of the integrated circuit 119 and provide it to the substrate 1. [ In addition, the transmission / reception control unit 116 may process data for transmission / reception of data through optical communication, and may control the light emission driving unit 114S and the detection unit 144R. The transmission / reception control unit 116 may perform a function of encoding or decoding data, such as the transmission / reception control unit 46 of the substrate 1. [
The light emission driving part 114S may generate a driving signal for driving the light emitting part 112S according to the data provided by the transmission / reception control part 116. [ The light emitting portion 112S can transmit an optical signal by emitting light in accordance with a driving signal. The optical signal is received by the light receiving portion 42R of the substrate 1 as described above.
The optical signal provided by the light emitting portion 42S of the substrate 1 is received by the light receiving portion 112R of the semiconductor chip 410. [ The light receiving section 112R can convert the received optical signal into a current signal. The detection unit 144R receives the current signal, converts the current signal into a digital value, and provides it to the transmission / reception control unit 116.
The light emission driving section 114S, the light emission section 112S, the reception section 112R and the detection section 114R of the semiconductor chip 410 are connected to the light emission drive section 44S, the light emission section 42S, the reception section 42R, And may have substantially the same configuration and function as those of the detection unit 44R, and repeated descriptions thereof are omitted.
The modulation scheme of the optical communication between the semiconductor chip 410 and the substrate 1 is not limited. For example, the modulation method may be an On-Off Keying (OOK) method in which "1" is expressed as optical signal emission and "0" is expressed as optical signal cancellation. Also, there are a pulse position modulation (PSM) method in which n binary signal groups are represented by 2n optical pulse position times, a pulse interval modulation method in which n binary signal groups are represented by 2n optical pulse position time intervals (PSK), amplitude modulation (ASK), and so on, and then modulated by a conventional digital communication method such as a pulse width modulation (PIM), a dual head PIM Sub-carrier modulation (SCM) or the like, which is re-modulated by the strength of the received signal.
Since the substrate 1 and the semiconductor chip 410 are located within a few millimeters in the semiconductor package 1000 and the semiconductor package 1000 is sealed by a molding member such as EMC, I never do that. Therefore, since the emitted light is hardly generated and the emitted light can reach almost the light receiving portion, the functional blocks such as the optical filter and the optical amplifier can be selectively omitted, and thus miniaturization is possible.
As described above, through the optical communication between the substrate 1 and the semiconductor chip 410, highly reliable communication that is not affected by external noise can be achieved. Also, by using optical communication, data can be transmitted and received at a high speed, and the risk such as a short circuit between the wires in a packaging step can be eliminated, thereby increasing the yield.
9 is a perspective view schematically showing a semiconductor package 1000 according to some embodiments of the technical concept of the present invention.
9, the semiconductor package 1000 includes a substrate 1, a first semiconductor chip 410a, a second semiconductor chip 410b, a semiconductor device 900, a heat sink 70, and a heat sink 90, . ≪ / RTI >
The substrate 1 includes a power transmission unit 200 configured to transmit radio power, a first substrate light emitting unit 42Sa for converting a current signal into an optical signal, and a first substrate light receiving unit 42Ra for converting an optical signal into a current signal, . ≪ / RTI > The power transmitter 200 may include a high frequency power driver 220, a first detector 230, a first power controller 240, a power supplier 210, and a power transmitter 250, Same as.
The semiconductor element 900 may be mounted on the substrate 1. [ More specifically, the semiconductor device 900 may be interposed between the substrate 1 and the first semiconductor chip 410a. The semiconductor device 900 may include a first via hole 901 configured to provide an optical communication path from the substrate 1 to the first and second semiconductor chips 410a and 410b as a dummy chip have.
The first semiconductor chip 410a may be mounted on the substrate 1 and the semiconductor device 900. [ The first semiconductor chip 410a includes a first power receiving unit 300a configured to receive wireless power, a first chip emitting unit 112Sa configured to convert a current signal into an optical signal, And may include a first chip light receiving section 112Ra. The first power receiving unit 300a may include the power converting unit 320, the second power controlling unit 340, the second detecting unit 330, the power storing unit 350, and the power receiving unit 310 5. The power storage unit 350 of the first semiconductor chip 410a may be electrically connected to the integrated circuit 119 and thus the integrated circuit 119 may be powered. The first semiconductor chip 410a may further include a second via hole 901 configured to provide an optical communication path from the substrate 1 to the second semiconductor chip 410b.
The first substrate light emitting portion 42Sa, the first substrate light receiving portion 42Ra, the first chip light receiving portion 112Ra, and the first chip light emitting portion 112Sa are as described in FIG. The first substrate light emitting portion 42Sa and the first substrate light receiving portion 42Ra are respectively connected to the first chip light receiving portion 112Ra and the first chip light emitting portion 112Sa. That is, the first via hole 900 is located between the first substrate light emitting portion 42Sa and the first chip light receiving portion 112Ra, or between the first substrate light receiving portion 42Ra and the first chip light emitting portion 112Sa can do.
The second semiconductor chip 410b may have the same configuration as the first semiconductor chip 410a. Therefore, for the optical signal transmission, the second substrate light emitting portion 42Sb and the second substrate light receiving portion 42Rb are respectively connected to the second chip light receiving portion 421a through the first via hole 900 and the second via hole 901, (112Rb) and the second chip emitting portion 112Sb. That is, the first via hole 900 and the second via hole 901 are located between the second substrate light emitting portion 42Sb and the second chip light receiving portion 112Rb, or between the second substrate light receiving portion 42Rb and the second chip light receiving portion 112Rb, And may be positioned between the light emitting portions 112Sb.
Although the chip light emitting units 112Sa and 112Sb and the chip light receiving units 112Ra and 112Rb are directly connected to the integrated circuit 119 in the case of FIG. 9, the present invention is not limited to this, The light emitting driver 44S between the integrated circuit 119 and the chip emitting units 112Sa and 112Sb and the detecting unit 44R between the integrated circuit 119 and the chip receiving units 112Ra and 112Rb and the transmitting / (46). Similarly, in the case of the substrate 1, a light emitting driver 114S, a detecting portion 114R (or a light emitting portion) 114R is provided between the interface 48, the substrate light emitting portions 42Sa and 42Sb and the interface 48 and the light receiving portions 44Sa and 44Sb of the substrate 1, And a transmission / reception control unit 116, as shown in FIG.
The thermoelectric element 70 may include a thermoelectric element 72 and a second power receiver 300b. The second power receiving unit 300b may include the power receiving unit 310, the power converting unit 320, the second detecting unit 330, the second power controlling unit 340, and the power storing unit 350 Lt; / RTI > The second power receiving unit 300b may be configured to receive wireless power from the power transmitting unit 200 of the substrate 1 and supply power of the thermoelectric element 72. [ Therefore, the connection portion 360 of the second power receiving portion 300b and the power wiring 729 of the thermoelectric element 72 can be electrically connected.
The power transmitting end 250 of the power transmitting unit 200 and the power receiving end 310 of the first and second power receiving units 300a and 300b are implemented as coils so that wireless power can be supplied through the inductive coupling method However, the present invention is not limited thereto, and may be implemented with an antenna or a resonator so that the electroless power can be supplied through a radial system or a non-radiative system.
The thermoelectric elements 72 in the thermal front 70 include n-type impurity elements 721, p-type impurity elements 722, conductive members 725 and 726, and power wiring 729 . The n-type and p-type impurity elements 723 may be alternately arranged. The conductive members 725 and 726 may be disposed above and below the n-type and p-type impurity elements 723 to electrically connect the n-type and p-type impurity elements 723 in series . The power wiring 729 may be electrically connected between a part of the conductive members 725 and 726 and the power receiving unit 300. More specifically, the power wiring 729 can be electrically connected to a part of the conductive members 725 and 726 and the power storage unit 350 in the power receiving unit 300, The power required for driving the thermoelectric element 72 can be supplied from the power source 350.
The heat generated by the first and second semiconductor chips 410a and 410b may be transmitted to the thermal power source 70 and the thermal power source 70 may generate heat by using the power received from the second power receiving unit 300b, Function can be performed. Thus, the heat transferred to the exposed one side of the preheating 70 may be discharged through the heat sink 90 in contact with the preheating 70.
10 is a perspective view schematically showing a semiconductor package 1000 according to another embodiment of the present invention. The semiconductor package 1000 according to this embodiment is a modification of the semiconductor package 1000 shown in Fig. The following description will not be repeated.
Referring to FIG. 10, the semiconductor device 900 may include a heat sink 70. The semiconductor device 900 interposed between the substrate 1 and the first semiconductor chip 410a may include the second power receiver 300b and the thermoelectric device 72. [ The heat sink 90 may also be in contact with the substrate 1. The heat generated by the first and second semiconductor chips 410a and 410b can be transferred to the semiconductor device 900 and the thermal element 70 in the semiconductor device 900 can be transferred from the second power receiver 300b The heat dissipation function can be performed using the received power. Thus, the heat transferred to the exposed one side of the heat pre-heater 70 is transferred to the substrate 1, and the heat can be discharged through the heat sink 90 in contact with the substrate 1.
It is to be understood that the shape of each portion of the accompanying drawings is illustrative for a clear understanding of the present invention. It should be noted that the present invention can be modified into various shapes other than the shapes shown. Like numbers refer to like elements throughout the drawings.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of.
