KR101473627B1 - Semiconductor package - Google Patents

Semiconductor package Download PDF

Info

Publication number
KR101473627B1
KR101473627B1 KR1020100054891A KR20100054891A KR101473627B1 KR 101473627 B1 KR101473627 B1 KR 101473627B1 KR 1020100054891 A KR1020100054891 A KR 1020100054891A KR 20100054891 A KR20100054891 A KR 20100054891A KR 101473627 B1 KR101473627 B1 KR 101473627B1
Authority
KR
South Korea
Prior art keywords
substrate
chip
semiconductor chip
light
light emitting
Prior art date
Application number
KR1020100054891A
Other languages
Korean (ko)
Other versions
KR20110135145A (en
Inventor
신인섭
Original Assignee
에스티에스반도체통신 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스티에스반도체통신 주식회사 filed Critical 에스티에스반도체통신 주식회사
Priority to KR1020100054891A priority Critical patent/KR101473627B1/en
Publication of KR20110135145A publication Critical patent/KR20110135145A/en
Application granted granted Critical
Publication of KR101473627B1 publication Critical patent/KR101473627B1/en

Links

Images

Abstract

The semiconductor package includes a substrate and a semiconductor chip that transmits and receives data to and from the substrate on the substrate. Wherein the substrate includes a substrate light emitting portion for emitting an optical signal to the semiconductor chip, a substrate light receiving portion for receiving an optical signal from the semiconductor chip, and a substrate transmission / reception control portion for controlling the substrate light emitting portion and the substrate light receiving portion, The chip includes a chip emitting portion for emitting an optical signal to the substrate, a chip receiving portion for receiving an optical signal from the substrate, and a chip transmitting / receiving controlling portion for controlling the chip emitting portion and the chip receiving portion. The substrate includes a substrate light emitting driver controlled by the substrate transceiver controller and driving the substrate light emitter, and a substrate detector for detecting an electric signal provided by the substrate light receiver and providing the electric signal to the substrate transceiver controller of the substrate. The semiconductor chip includes a chip light emission driving unit controlled by the chip transmission / reception control unit and driving the chip light emission unit, and a chip detection unit for detecting an electric signal provided by the chip light reception unit and providing the electric signal to the chip transmission / reception control unit.

Description

[0001]

The present invention relates to a semiconductor package. More particularly, the present invention relates to a semiconductor package for transmitting and receiving signals between a substrate and a semiconductor chip in the semiconductor package.

Electronic products are becoming increasingly smaller and require higher-capacity data processing. Thus, there is a growing need to increase the degree of integration of semiconductor memory devices used in electronic products, but the increase in the degree of integration is reaching its limit. Accordingly, various methods have been proposed to enable a semiconductor package including a semiconductor memory device to process a large amount of data.

As a method for enabling high-capacity data processing, a three-dimensional structure having a vertical transistor structure instead of a conventional planar transistor structure has been proposed, but it takes a considerable period of time to realize the difficulty in manufacturing. Therefore, a stacked semiconductor package for stacking a plurality of semiconductor chips has been proposed in order to enable high-capacity data processing while still using the existing semiconductor manufacturing process.

However, such a laminated semiconductor package suffers from difficulty in providing a signal and a power supply path because the number of paths for supplying signals and power of the stacked semiconductor chips increases in proportion to the number of stacked semiconductor chips. Crosstalk between the signal path and the power path is also becoming a big problem.

SUMMARY OF THE INVENTION The present invention provides a semiconductor package that prevents interference between a signal and a power source.

According to an aspect of the present invention, there is provided a semiconductor package according to one aspect of the present invention. The semiconductor package includes a substrate and a semiconductor chip for transmitting and receiving data to and from the substrate on the substrate,
Wherein the substrate includes a substrate light emitting portion for emitting an optical signal to the semiconductor chip, a substrate light receiving portion for receiving an optical signal from the semiconductor chip, and a substrate transmission / reception control portion for controlling the substrate light emitting portion and the substrate light receiving portion,
Wherein the semiconductor chip includes a chip light emitting portion for emitting an optical signal to the substrate, a chip light receiving portion for receiving an optical signal from the substrate, and a chip transmission / reception control portion for controlling the chip light emitting portion and the chip light receiving portion,
And a substrate detector for detecting an electric signal provided by the substrate light receiving unit and providing the electric signal to the substrate transmission / reception control unit of the substrate, wherein the substrate detection unit is controlled by the substrate transmission / reception control unit and drives the substrate light emitting unit,
The semiconductor chip includes a chip light emission driving unit controlled by the chip transmission / reception control unit and driving the chip light emission unit, and a chip detection unit for detecting an electric signal provided by the chip light reception unit and providing the electric signal to the chip transmission / reception control unit.

According to another aspect of the present invention, there is provided a semiconductor package. The semiconductor package includes a substrate, a first semiconductor chip that transmits and receives data to and from the substrate on the substrate, and a second semiconductor chip that transmits and receives data to and from the substrate on the first semiconductor chip,
Wherein the substrate includes a substrate light emitting portion for emitting an optical signal to the first semiconductor chip or a second semiconductor chip, a substrate light receiving portion for receiving an optical signal from the first semiconductor chip or the second semiconductor chip, And a substrate transceiving control section for controlling the substrate light receiving section,
Wherein the first semiconductor chip and the second semiconductor chip include a chip light emitting portion for emitting an optical signal to the substrate, a chip light receiving portion for receiving an optical signal from the substrate, and a chip transmission / reception control portion for controlling the chip light emitting portion and the chip light receiving portion Lt; / RTI >
And a substrate detector for detecting an electric signal provided by the substrate light receiving unit and providing the electric signal to the substrate transmission / reception control unit of the substrate, wherein the substrate detection unit is controlled by the substrate transmission / reception control unit and drives the substrate light emitting unit,
Wherein the first semiconductor chip and the second semiconductor chip are controlled by the chip transmission / reception control unit and drive the chip emission unit, and a chip for detecting the electric signal provided by the chip light reception unit and providing the electric signal to the chip transmission / reception control unit And a detection unit.

A semiconductor package according to the present invention can freely transmit and receive data between a substrate and a semiconductor chip in a semiconductor package by using optical communication, thereby freeing interference between a data signal and a power supply signal. By securing a light path between a substrate and a semiconductor chip in a semiconductor package, Data communication is possible. In addition, by using a wide bandwidth, high-speed data communication can be performed between the substrate and the semiconductor chip.

1 is a block diagram showing data transmission / reception between a substrate and a semiconductor chip in a semiconductor package according to an embodiment of the present invention.
2 conceptually illustrates a semiconductor package including a substrate and a semiconductor chip according to an embodiment of the present invention. In Fig. 2, an upper perspective view of the substrate and a lower perspective view of the semiconductor chip are conceptually shown.
Figure 3 conceptually illustrates a longitudinal cross-sectional view of a semiconductor package in accordance with an embodiment of the present invention.
FIG. 4 conceptually shows a cross-sectional view in which a light path between a light emitting portion and a light receiving portion of a semiconductor package is exposed according to an embodiment of the present invention.
FIG. 5 conceptually shows a cross-sectional view in which a light path between a light emitting portion and a light receiving portion of a semiconductor package according to another embodiment of the present invention is exposed.
6 is a block diagram illustrating data transmission / reception between a substrate and a plurality of semiconductor chips in a semiconductor package according to another embodiment of the present invention.
FIG. 7 conceptually shows a cross-sectional view in which light paths between light emitting portions and light receiving portions of a semiconductor package including a substrate and a plurality of semiconductor chips are exposed according to another embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following description taken in conjunction with the accompanying drawings, in which: FIG. However, the embodiments of the present invention can be modified in various ways, and the scope of the present invention should not be construed as being limited by the embodiments described below. The embodiments according to the technical concept of the present invention are provided for a more complete explanation of the present invention to those skilled in the art. Unless otherwise indicated, the same reference numbers in the drawings indicate like elements and the various elements and regions are schematically drawn. Accordingly, the invention is not limited by the relative size or spacing depicted in the accompanying drawings.

1 is a block diagram showing data transmission / reception between a substrate and a semiconductor chip in a semiconductor package according to an embodiment of the present invention.

Referring to FIG. 1, a semiconductor package 1000 includes a substrate 1 and a semiconductor chip 100. The substrate 1 includes a light emitting portion 42S, a light receiving portion 42R, a light emitting driving portion 44S, a detecting portion 44R, and a transmitting / receiving controlling portion 46 for optical communication with the semiconductor chip 100. In addition, the substrate 1 may further include an interface unit 48 for transmitting and receiving data with an external device.

The semiconductor chip 100 includes a light emitting portion 112S, a light receiving portion 112R, a light emitting driving portion 114S, a detecting portion 114R, and a transmitting / receiving controlling portion 116 for optical communication with the substrate 1. In addition, the semiconductor chip 100 may further include an integrated circuit 119 required according to a desired function of the semiconductor package 1000.

The interface unit 48 may be provided for data communication between the semiconductor package 1000 and an external device. Specifically, the interface unit 48 may provide a control command from the external apparatus to the transmission / reception control unit 46, and may supply data from the semiconductor chip 100 to the external apparatus through the transmission / reception control unit 46 .

The transmission / reception control unit 46 may be connected to the interface unit 48 to perform control commands from the external device to the semiconductor chip 100 or to transmit the control commands to the transmission / reception control unit 116 of the semiconductor chip 100. The transmission / reception control unit 46 processes data to transmit / receive data through optical communication, and controls the light emission driving unit 44S and the detection unit 44R. The transmission / reception control unit 46 may encode control commands input from the interface unit 48 and provide it to the light emission driving unit 44S. In addition, the transmission / reception control unit 46 may decode the data output from the detection unit 44R and provide the data to the interface unit 48.

The light emission driving unit 44S may generate a driving signal for driving the light emitting unit 42S according to data provided from the transmission / reception control unit 46. [ The data may be encoded data. For example, in the case where the data value is 0, the light emission driving part 44S prevents the current from flowing to the light emitting part 42S, and when the data value is 1, the current flows through the light emitting part 42S so that the light emitting part 42S It is possible to output an optical signal. Alternatively, it may be operated on the contrary. In addition, the light emission driver 44S may have a plurality of analog outputs capable of expressing a plurality of bits. For example, in order to express 4 bits, the light emission driving part 44S can output twenty four different currents so that the current of 24 analog values flows in the light emitting part 42S.

The light emitting portion 42S can output an optical signal according to a driving signal from the light emission driving portion 44S. The light emitting portion 42S may be a visible light LED or a laser diode capable of outputting visible light, or an infrared LED capable of outputting infrared light. The output visible light or infrared light reaches the light receiving portion 112R of the semiconductor chip 100 along the optical path between the substrate 1 and the semiconductor chip 100. [

The light emitting portion 42S may be composed of light emitting sources having a plurality of distinguishable wavelengths. For example, the light emitting unit 42S includes an infrared LED, a red LED, a green LED, and a blue LED, and can output a plurality of optical signals through one optical path. In this case, the light receiving portion 112R of the semiconductor chip 100 may be formed of the same number of light receiving elements to receive the light of the corresponding wavelength. In addition, an optical filter for passing only the light of the wavelength corresponding to the light receiving elements may be disposed at the front end of the light receiving elements.

The light receiving portion 42R can receive optical signals provided from the light emitting portion 112S of the semiconductor chip 100. [ For example, the light receiving unit 42R may include a photodiode that receives light emitted from the light emitting unit 112S and converts the light into a current. As described above, in the case where the light emitting portion 112S is composed of a plurality of light emitting elements that output light of a plurality of different wavelengths, the light receiving portion 42R may be formed of the same number of light receiving elements, May further include the same number of optical filters.

The detection unit 44R can convert the currents output by the light-receiving unit 42R into digital values and provide them to the transmission / reception control unit 46. [ For example, when the light emitting portion 112S emits light according to the data bit value of 1, the light receiving portion 42R will receive light and output a current, and the detecting portion detects the output current, It is possible to detect that the value of the data bit output by the bit- For example, when the light emitting portion 112S outputs a quantized optical signal for transmitting a plurality of bits, the detecting portion 44R may include an analog-to-digital converter having the same bit resolution to detect them.

The transmission / reception control unit 46 may process the received digital values and provide the digital values to the interface unit 48.

The semiconductor chip 100 includes the necessary integrated circuit 119 according to the purpose and function of the semiconductor package 1000. For example, the integrated circuit 119 may include circuitry such as a DRAM circuit, a flash memory circuit, and / or a logic circuit. The integrated circuit 119 may include wirings for inputting / outputting data to / from the integrated circuit 119. The wirings may be connected to the transmission / reception control unit 116. The integrated circuit 119 of the semiconductor chip 100 may include a transmission / reception control unit 116. Further, the integrated circuit 119 may be controlled by the transmission / reception control unit 116 as a whole.

The transmission / reception control unit 116 may process data to input data to the integrated circuit 119 or control the integrated circuit 119 in accordance with a control command. The transmission / reception control unit 116 may receive the result data from the integrated circuit 119 or may receive the status signal indicating the status of the integrated circuit 119 and provide it to the substrate 1. [ In addition, the transmission / reception control unit 116 may process data for transmission / reception of data through optical communication, and may control the light emission driving unit 114S and the detection unit 144R. The transmission / reception control unit 116 may perform a function of encoding or decoding data, such as the transmission / reception control unit 46 of the substrate 1. [

The light emission driving part 114S may generate a driving signal for driving the light emitting part 112S according to the data provided by the transmission / reception control part 116. [ The light emitting portion 112S can transmit an optical signal by emitting light in accordance with a driving signal. The optical signal is received by the light receiving portion 42R of the substrate 1 as described above.

The optical signal provided by the light emitting portion 42S of the substrate 1 is received by the light receiving portion 112R of the semiconductor chip 100. [ The light receiving section 112R can convert the received optical signal into an electrical signal, for example, a current signal. The detection unit 144R receives the electrical signal, converts the electrical signal into a digital value, and provides the digital value to the transmission / reception control unit 116.

The light emitting driver 114S, the light emitting portion 112S, the light receiving portion 112R and the detecting portion 114R of the semiconductor chip 100 are connected to the light emitting portion 44S, the light emitting portion 42S, the light receiving portion 42R, And may have substantially the same configuration and function as those of the detection unit 44R, and repeated descriptions thereof are omitted.

The modulation method of optical communication between the semiconductor chip 100 and the substrate 1 is not limited. For example, the modulation method may be an On-Off Keying (OOK) method in which "1" is expressed as optical signal emission and "0" is expressed as optical signal cancellation. Also, a pulse position modulation method (PPM) in which n binary signal groups are represented by 2n optical pulse position times, a pulse interval modulation method in which n binary signal groups are represented by 2n optical pulse position time intervals (PSK), amplitude modulation (ASK), and so on, and then modulated by a conventional digital communication method such as a pulse width modulation (PIM), a dual head PIM Sub-carrier modulation (SCM) or the like, which is re-modulated by the strength of the received signal.

In addition, since the substrate 1 and the semiconductor chip 100 are located within a few millimeters in the semiconductor package 1000 and the semiconductor package 1000 is sealed by a molding member such as EMC, problems due to external interference light occur I never do that. Therefore, since the emitted light is hardly generated and the emitted light can reach almost the light receiving portion, the functional blocks such as the optical filter and the optical amplifier can be selectively omitted, and thus miniaturization is possible.

As described above, through the optical communication between the substrate 1 and the semiconductor chip 100, highly reliable communication that is not affected by external noise can be achieved. Also, by using optical communication, data can be transmitted and received at a high speed, and the risk such as a short circuit between the wires in a packaging step can be eliminated, thereby increasing the yield.

2 conceptually illustrates a semiconductor package including a substrate and a semiconductor chip according to an embodiment of the present invention. In Fig. 2, an upper perspective view of the substrate and a lower perspective view of the semiconductor chip are conceptually shown.

Referring to Fig. 2, the substrate 1 may include a light emitting portion 42S, a light receiving portion 42R, and a transmission / reception control element 45. Fig. A mounting surface 71 on which the semiconductor chip 100 is to be mounted may be defined on the upper surface of the substrate 1. As shown in Fig. 2, the light emitting portion 42S and the light receiving portion 42R may be disposed in the mounting surface 71. Fig. The mounting surface 71 substantially corresponds to the lower surface of the semiconductor chip 100 as a conceptual area.

The transmission / reception control element 45 may be implemented in the form of a separate semiconductor element or a semiconductor chip. The transmission / reception control element 45 can perform the functions of the light emission driving part 44S, the detection part 44R, the transmission / reception control part 46 and the interface part 48 described with reference to FIG. Alternatively, the transmission / reception control element 45 may be implemented in the form of discrete elements that respectively implement the functions of the light emission driver 44S, the detection unit 44R, the transmission / reception control unit 46, and the interface unit 48. [ For example, the transmission / reception control element 45 may be an element that integrally performs the functions of the light emission driver 44S, the detection unit 44R, and the transmission / reception control unit 46, and may include a separate interface Devices (not shown) may be separately mounted on the substrate 1 or may be implemented on the substrate 1. Hereinafter, a single transmission / reception control element 45 (hereinafter referred to as " transmission / reception control element 45 ") implemented by integrating the functions of the light emission driving part 44S, the detection part 44R, the transmission / reception control part 46 and the interface part 48 for clarifying the idea of the present invention, ), But it should be noted that the present invention is not so limited.

The light emitting portion 42S and the light receiving portion 42R perform substantially the same function as the light emitting portion 42S and the light receiving portion 42R described with reference to FIG. The light emitting portion 42S may include an LED or a laser diode that emits visible light and / or infrared light. The light receiving portion 42R may include a photodiode, for example, for receiving visible light and / or infrared light and converting the light into an electrical signal can do. 2, the light emitting portion 42S and the light receiving portion 42R are connected to the transmission / reception control element 45 by wiring and can be controlled by the transmission / reception control element 45. [

The positions of the light emitting portion 42S and the light receiving portion 42R do not limit the present invention. 2, the light emitting portion 42S, the light receiving portion 42R and the transmission / reception control element 45 are shown protruding on the upper surface of the substrate 1 in the form of separate elements, The substrate 1 may be recessed and formed in order to reduce the thickness of the substrate 1. Although the light emitting portion 42S, the light receiving portion 42R and the transmission / reception control element 45 are illustrated as being protruded and arranged as shown in FIG. 2 in order to clearly understand the present invention, this arrangement is not limited to the present invention Do not.

1, the semiconductor chip 100 may include a light emitting portion 112S, a light receiving portion 112R, a light emitting driving portion 114S, a detecting portion 114R, a transmitting / receiving controlling portion 116 and an integrated circuit 119 have. The lower surface of the semiconductor chip 100 shown in FIG. 2 includes the functions of the light emitting portion 112S, the light receiving portion 112R, the light emitting driver 114S, the detecting portion 114R, the transmission / reception controlling portion 116 and the integrated circuit 119 Is an active surface on which circuits and interconnects for performing are formed.

The light emitting portion 112S, the light receiving portion 112R, the light emitting driving portion 114S, the detecting portion 114R, the transmitting and receiving controlling portion 116 and the integrated circuit 119 are constituted by the light emitting portion 112S, the light receiving portion 112R The light emitting driver 114S, the detector 114R, the transmission / reception controller 116, and the integrated circuit 119, and the detailed description thereof will not be repeated here. 2, circuits for performing functions of the light emitting portion 112S, the light receiving portion 112R, the light emitting driver 114S, the detecting portion 114R, the transmission / reception controlling portion 116 and the integrated circuit 119 are clearly distinguished from each other. However, one or more of them, for example, the light emission driver 114S, the detection unit 114R, the transmission / reception control unit 116, and the integrated circuit 119 may be integrally formed. Although the light emitting portion 112S and the light receiving portion 112R are shown as being formed on the semiconductor chip 100, they may be separately manufactured and attached to the semiconductor chip 100. [ In this case, it may be attached to the lower surface of the semiconductor chip 100 as shown in FIG. 2, but it may be attached to the side surface of the semiconductor chip 100. However, as will be described later, the light emitting portion 112S and the light receiving portion 112R should be disposed so as to substantially correspond to the light receiving portion 42R and the light emitting portion 42S of the substrate 1. [

The light emitting portion 112S and the light receiving portion 112R of the semiconductor chip 100 can be arranged so as to substantially correspond to the light receiving portion 42R and the light emitting portion 42S of the substrate 1, respectively. That is, when the lower surface of the semiconductor chip 100 is mounted corresponding to the mounting surface 71 of the substrate 1, the light emitting portion 112S and the light receiving portion 112R of the semiconductor chip 100 are mounted on the substrate 1, Receiving portion 42R and the light-emitting portion 42S of the light-receiving portion 42R.

Figure 3 conceptually illustrates a longitudinal cross-sectional view of a semiconductor package in accordance with an embodiment of the present invention. Fig. 4 conceptually shows a cross-sectional view in which a light path between a light emitting portion and a light receiving portion of a semiconductor package is exposed according to an embodiment of the present invention.

3 and 4, the semiconductor package 1000 includes a substrate 1 and a semiconductor chip 100. The semiconductor chip 100 can be mounted on the upper surface of the substrate 1 with the intermediate member 75 interposed therebetween. The intermediate member 75 may be a resin-based epoxy, an adhesive tape having excellent heat resistance, or a thin film coated with an adhesive on its surface. Although only one semiconductor chip 100 is shown, two or more semiconductor chips may be stacked and mounted, which will be described in detail below. The semiconductor package 1000 may include a sealing material 1010 surrounding the semiconductor chip 100. The encapsulant 1010 may be any molding material known in the art, for example, a molding material such as an epoxy molding compound (EMC).

The substrate 1 may comprise an epoxy resin, a polyimide resin, a bismaleimide triazine (BT) resin, FR-4 (Flame Retardant 4), FR-5, ceramic, silicon, or glass, And the present invention is not limited thereto. The substrate 1 may be a single layer or may comprise a multi-layer structure including wiring patterns therein. For example, the substrate 1 may be a rigid flat plate, a plurality of rigid flat plates adhered to each other, or a thin flexible printed circuit board and a rigid flat plate adhered to each other. The plurality of rigid flat plates, or the printed circuit boards, which are adhered to each other, may each include a wiring pattern. Further, the substrate 1 may be a low temperature co-fired ceramic (LTCC) substrate. The LTCC substrate may include a plurality of ceramic layers stacked, and may include a wiring pattern therein.

On the upper surface of the substrate 1, a transmission / reception control element 45 may be disposed. As described with reference to FIG. 2, the transmission / reception control element 45 can control the light emission / light reception section 42 and is not described repeatedly. The transmission / reception control element 45 protrudes on the upper surface of the substrate 1, but may be recessed and formed in the substrate 1, and in particular, may be formed in the substrate 1 below the semiconductor chip 100, .

The light-emitting / light-receiving unit 42 may be disposed on the upper surface of the substrate 1. The light emitting / receiving section 42 of FIG. 3 represents the light emitting section 42S or the light receiving section 42R of FIG. For example, when the light emitting / receiving section 42 is the light emitting section 42S, the light emitting / receiving section 112 is the light receiving section 112R. When the light emitting / receiving section 42 is the light receiving section 42R, Emitting portion 112S. The light emitting portion 42S of the substrate 1 may be disposed at a position corresponding to the light receiving portion 112R of the semiconductor chip 112R so as to be spaced apart from each other, May be spaced apart from each other at positions corresponding to the light emitting portion 112S of the semiconductor chip 112S.

An intermediate member 75 may be disposed between the substrate 1 and the semiconductor chip 100. The intermediate member 75 may have an appropriate thickness to allow the substrate 1 and the semiconductor chip 100 to be spaced apart from each other and may have adhesiveness so that the semiconductor chip 100 can be fixed to the substrate 1. The intermediate member 75 may have a through hole at a position corresponding to the light emitting / light receiving portions 42 and 112 so that the light path between the light emitting / light receiving portions 42 and 112 can be ensured. The through hole may be formed individually as a through hole disposed between the light emitting portion 42S and the light receiving portion 112R and a through hole disposed between the light receiving portion 42R and the light emitting portion 112S as shown in FIG. In another example, the through-hole may be integrally formed to open the entire region where the light emission / light receiving portions 42 and 112 are to be disposed. Since the intermediate member 75 has the through-hole, it is possible to prevent the encapsulant from filling the optical path in a subsequent molding process.

The semiconductor chip 100 may be attached on the substrate 1 through the intermediate member 75. [ The active surface of the semiconductor chip 100 may be laminated on the substrate 1 so as to face the substrate 1, as described above. The semiconductor chip 100 can be operated by receiving power from the substrate 1. [ The semiconductor chip 100 can receive power from the substrate 1 through a bonding wire (not shown). Alternatively, the semiconductor chip 100 may receive power from the substrate 1 through bumps or solder balls. Alternatively, the semiconductor chip 100 may receive power from the substrate 1 through a through silicon via (TSV).

A light emitting / light receiving section 112, a light emitting driving section or detecting section 114, a transmitting / receiving controlling section 116 and an integrated circuit 119 may be formed on the active surface of the semiconductor chip 100, And is not repeated here. The reference numeral 114 denotes the light emitting driver 114S or the detecting portion 114R and may be determined depending on the type of the light emitting / As shown in FIG. 3, the light emitting / receiving unit 112 may be formed in the semiconductor chip 100. Further, the light emission / light receiving portion 112 may be attached as an additional element on the active surface of the semiconductor chip 100.

As described above, the encapsulant 1010 may be formed to cover the semiconductor chip 100 attached on the substrate 1. However, since the intermediate member 75 between the substrate 1 and the semiconductor chip 100 is provided with a through hole capable of securing the optical path between the light emission / light receiving portions 42 and 112, Lt; / RTI >

FIG. 5 conceptually shows a cross-sectional view in which a light path between a light emitting portion and a light receiving portion of a semiconductor package according to another embodiment of the present invention is exposed.

Referring to FIG. 5, a dummy chip 101 may be disposed between the substrate 1 and the semiconductor chip 100. An interlayer 76 may be disposed between the substrate 1 and the dummy chip 101 and between the dummy chip 101 and the semiconductor chip 100.

The dummy chip 101 means a semiconductor chip in which circuit elements such as an integrated circuit are not formed. However, the dummy chip 101 may have a thickness for separating the substrate 1 and the semiconductor chip 100 from each other. The dummy chip 101 has a light path between the light emitting portion 42S of the substrate 1 and the light receiving portion 112R of the semiconductor chip 100 and a light path between the light receiving portion 42R and the light emitting portion 112S Hole 104 so that it can be formed. The through holes 104 can be formed by, for example, a laser or an RIE (Reactive Ion Etch) method. The through hole 104 may be formed to be larger than the size of the light emitting portions 42S and 112S and the light receiving portions 42R and 112R.

The interlayer 76 may be a resin-based epoxy, an adhesive tape having excellent heat resistance, or a thin film coated with an adhesive on its surface. The intermediate film 76 attached to the upper and lower surfaces of the dummy chip 101 may be thinner than the intermediate member 75 of FIGS. 3 and 4 because the dummy chip 101 has a predetermined thickness. Like the intermediate member 75, the intermediate film 76 may have an opening in a region corresponding to the optical path between the light emitting portions 42S and 112S and the light receiving portions 42R and 112R. However, if the interlayer 76 is transparent enough not to affect the optical signal between the light emitting portions 42S and 112S and the light receiving portions 42R and 112R, it may be disposed on the entire upper surface of the dummy chip 101 without the opening portion . If the light emitting portion 42S and the light receiving portion 42R of the substrate 1 are recessed and formed, the intermediate film 76 may be formed entirely on the underside of the dummy chip 101 without an opening.

By constructing the optical path through the through hole 104 of the dummy chip 101, the optical path can be reliably secured by the sealing material even if the semiconductor chip 100 is encapsulated with an encapsulating material (not shown).

6 is a block diagram illustrating data transmission / reception between a substrate and a plurality of semiconductor chips in a semiconductor package according to another embodiment of the present invention.

Referring to FIG. 6, a semiconductor package 1000 includes a substrate 1 and first to n-th semiconductor chips 100-1 to 100-n. n denotes the number of semiconductor chips 100 that can be stacked in the semiconductor package 1000 as arbitrary natural numbers. n may be, for example, 2, and may be 8 or 10.

The first semiconductor chip 100-1 is substantially the same as the semiconductor chip 100 of FIG. 1, and therefore description thereof will not be repeated. The nth semiconductor chip 100-n is also substantially the same as the semiconductor chip 100 of FIG. The first to nth semiconductor chips 100-1 to 100-n are connected to the light emitting units 112S-1 to 112S-n, respectively, And the light receiving portions 112R-1, ..., 112R-n should be disposed at different positions. Will be described in more detail below with reference to FIG.

The substrate 1 includes a transmission / reception control unit 46 and an interface unit 48 similar to the substrate 1 of Fig. 1, and these are described in Fig. 1 and will not be repeated here. The substrate 1 has the same number of light emitting portions 42S-1 to 42S-n as the number n of the semiconductor chips 100-1 to 100-n and light receiving portions 42R- 1, ..., 42R-n. The first light emitting portions 42S-1 and the first light receiving portions 42R-1 can perform optical communication with the light emitting portion 112S-1 and the light receiving portion 112R-1 of the first semiconductor chip 100-1 The n-th light emitting units 42S-n and the n-th light receiving units 42R-n can perform optical communication with the light emitting unit 112S-n and the light receiving unit 112R-n of the n-th semiconductor chip 100- have.

The substrate 1 may include light emitting drivers 44S-1 to 44S-n for driving the light emitting units 42S-1 to 42S-n, and the light receiving units 42R- 1, ..., and 44R-n that detect signals from the first, second, third, ..., and 42R-n. The light emission drivers 44S-1 to 44S-n and the detection units 44R-1 to 44R-n may be controlled by the transmission / reception control unit 46, The detection unit 44S and the detection unit 44R, and therefore will not be described repeatedly.

FIG. 7 conceptually shows a cross-sectional view in which light paths between light emitting portions and light receiving portions of a semiconductor package including a substrate and a plurality of semiconductor chips are exposed according to another embodiment of the present invention.

Referring to FIG. 7, a semiconductor package 1000 includes a substrate 1, a dummy chip 101, a first semiconductor chip 100-1, and a second semiconductor chip 100-2.

On the substrate 1, a first light emitting portion 42S-1 and a first light receiving portion 42R-1 for optical communication with the first semiconductor chip 100-1 can be formed. A second light emitting portion 42S-2 and a second light receiving portion 42R-2 for optical communication with the second semiconductor chip 100-2 may be formed on the substrate 1. [

The dummy substrate 101 may be adhered on the substrate 1 through the intermediate film 76. The dummy substrate 101 is provided with a through hole 104 (see FIG. 1) for exposing the first light emitting portion 42S-1, the first light receiving portion 42R-1, the second light emitting portion 42S- May be formed.

The first semiconductor chip 100-1 may be laminated on the dummy substrate 101 through the intermediate film 76. [ The first semiconductor chip 100-1 may include a first light emitting portion 112S-1 and a first light receiving portion 112R-1 for optical communication with the substrate 1. [ The first light emitting portion 112S-1 and the first light receiving portion 112R-1 are connected to the first light receiving portion 42R-1 of the substrate 1 through the light path secured by the through hole 104 of the dummy substrate 101 And the first light emitting portion 42S-1. The first semiconductor chip 100-1 may include through holes 105 passing through the positions corresponding to the second light emitting portion 42S-2 and the second light receiving portion 42R-2 of the substrate 1 .

The second semiconductor chip 100-2 may be stacked on the first semiconductor chip 100-1 through the intermediate film 76. [ The second semiconductor chip 100-2 may include a second light emitting portion 112S-2 and a second light receiving portion 112R-2 for optical communication with the substrate 1. [ The second light emitting portion 112S-2 and the second light receiving portion 112R-2 are secured by the through hole 104 of the dummy substrate 101 and the through hole 105 of the first semiconductor chip 100-1 It is possible to conduct optical communication with the second light receiving portion 42R-2 and the second light emitting portion 42S-2 of the substrate 1 through the optical path.

In this embodiment, two semiconductor chips 100-1 and 100-2 are stacked, but the present invention is not limited thereto. It is possible to construct a light path by forming a through hole in the semiconductor chips 100 even if more semiconductor chips 100 are stacked so that each of the stacked semiconductor chips 100 can perform reliable optical communication with the substrate 1 have.

1: substrate 42S:
42R: light receiving section 44S:
44R: Detection unit 45: Transmission / reception control element
46: transmission / reception control unit 48:
71: room scene 75: intermediate
76: interlayer 100: semiconductor chip
101: dummy chip 104, 105: through hole
112S: light emitting portion 112R: light receiving portion
114S: light emitting driver 114R:
116: Transmitting / receiving controller 119: Integrated circuit

Claims (10)

delete Board; And
And a semiconductor chip for transmitting and receiving data to and from the substrate on the substrate,
Wherein the substrate includes a substrate light emitting portion for emitting an optical signal to the semiconductor chip, a substrate light receiving portion for receiving an optical signal from the semiconductor chip, and a substrate transmission / reception control portion for controlling the substrate light emitting portion and the substrate light receiving portion,
Wherein the semiconductor chip includes a chip light emitting portion for emitting an optical signal to the substrate, a chip light receiving portion for receiving an optical signal from the substrate, and a chip transmission / reception control portion for controlling the chip light emitting portion and the chip light receiving portion,
And a substrate detector for detecting an electric signal provided by the substrate light receiving unit and providing the electric signal to the substrate transmission / reception control unit of the substrate, wherein the substrate detection unit is controlled by the substrate transmission / reception control unit and drives the substrate light emitting unit,
The semiconductor chip includes a chip light emission driving unit controlled by the chip transmission / reception control unit and driving the chip light emission unit, and a chip detection unit detecting an electric signal provided by the chip light reception unit and providing the electric signal to the chip transmission / reception control unit Gt;
3. The method of claim 2,
The substrate light emitting unit and the chip light emitting unit may include a light emitting diode or a laser diode that emits visible light or infrared light,
Wherein the substrate light receiving unit and the chip light receiving unit include a photodiode for receiving the optical signal and converting the optical signal into an electrical signal.
delete 3. The method of claim 2,
Wherein the substrate light emitting portion is disposed to face the chip light receiving portion, and the substrate light receiving portion is disposed to face the chip light emitting portion.
3. The method of claim 2,
Further comprising an intermediate member disposed between the substrate and the semiconductor chip,
Wherein the intermediate member includes at least one through hole opened between the substrate light emitting portion and the chip light receiving portion and between the substrate light receiving portion and the chip light emitting portion,
Wherein optical signals are transmitted and received between the substrate light emitting portion and the chip light receiving portion and between the substrate light receiving portion and the chip light emitting portion through the through hole.
The method according to claim 6,
Wherein the intermediate member is a dummy chip having an adhesive film attached to an upper surface and a lower surface thereof.
Board;
A first semiconductor chip for transmitting and receiving data to and from the substrate on the substrate; And
And a second semiconductor chip for transmitting and receiving data to and from the substrate on the first semiconductor chip,
Wherein the substrate includes a substrate light emitting portion for emitting an optical signal to the first semiconductor chip or a second semiconductor chip, a substrate light receiving portion for receiving an optical signal from the first semiconductor chip or the second semiconductor chip, And a substrate transceiving control section for controlling the substrate light receiving section,
Wherein the first semiconductor chip and the second semiconductor chip include a chip light emitting portion for emitting an optical signal to the substrate, a chip light receiving portion for receiving an optical signal from the substrate, and a chip transmission / reception control portion for controlling the chip light emitting portion and the chip light receiving portion Lt; / RTI >
And a substrate detector for detecting an electric signal provided by the substrate light receiving unit and providing the electric signal to the substrate transmission / reception control unit of the substrate, wherein the substrate detection unit is controlled by the substrate transmission / reception control unit and drives the substrate light emitting unit,
Wherein the first semiconductor chip and the second semiconductor chip are controlled by the chip transmission / reception control unit and drive the chip emission unit, and a chip for detecting the electric signal provided by the chip light reception unit and providing the electric signal to the chip transmission / reception control unit And a detection section.
9. The method of claim 8,
Wherein the first semiconductor chip has an optical path for optical communication between the substrate and the second semiconductor chip.
9. The method of claim 8,
The substrate includes a first substrate light emitting portion for emitting an optical signal to the first semiconductor chip, a first substrate light receiving portion for receiving an optical signal from the first semiconductor chip, a second substrate light receiving portion for emitting an optical signal to the second semiconductor chip, And a second substrate light receiving section for receiving an optical signal from the second semiconductor chip,
Wherein the first semiconductor chip includes a first chip emitting portion for emitting an optical signal to the substrate and facing the first light receiving portion of the substrate, and a second chip emitting portion for receiving the optical signal from the substrate, And a first chip light receiving portion arranged to face the first chip light receiving portion,
The second semiconductor chip may include a second chip light emitting portion that emits an optical signal to the substrate and is arranged to face the second substrate light receiving portion of the substrate and a second chip light emitting portion that receives the optical signal from the substrate, And a second chip light-receiving portion arranged to face the first chip light-
The first semiconductor chip is provided between the second substrate light emitting portion of the substrate and the second chip light receiving portion of the second semiconductor chip and between the second substrate light receiving portion of the substrate and the second chip light emitting portion of the second semiconductor chip And further comprising at least one through-hole.
KR1020100054891A 2010-06-10 2010-06-10 Semiconductor package KR101473627B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100054891A KR101473627B1 (en) 2010-06-10 2010-06-10 Semiconductor package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100054891A KR101473627B1 (en) 2010-06-10 2010-06-10 Semiconductor package

Publications (2)

Publication Number Publication Date
KR20110135145A KR20110135145A (en) 2011-12-16
KR101473627B1 true KR101473627B1 (en) 2014-12-18

Family

ID=45502179

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100054891A KR101473627B1 (en) 2010-06-10 2010-06-10 Semiconductor package

Country Status (1)

Country Link
KR (1) KR101473627B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102048251B1 (en) * 2013-03-14 2019-11-25 삼성전자주식회사 Memory chip package, memory system having the same and driving method thereof
KR102240456B1 (en) 2014-07-30 2021-04-15 에스케이하이닉스 주식회사 Semiconductor device with optical through via
KR20160058591A (en) 2014-11-17 2016-05-25 에스케이하이닉스 주식회사 Semiconductor package having optical interconnect

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005044861A (en) * 2003-07-23 2005-02-17 Seiko Epson Corp Semiconductor device, method of using the same, method of manufacturing the same, and electronic apparatus
US20090289265A1 (en) * 2008-04-07 2009-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Electronic device and method of manufacturing an electronic device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005044861A (en) * 2003-07-23 2005-02-17 Seiko Epson Corp Semiconductor device, method of using the same, method of manufacturing the same, and electronic apparatus
US20090289265A1 (en) * 2008-04-07 2009-11-26 Taiwan Semiconductor Manufacturing Company, Ltd. Electronic device and method of manufacturing an electronic device

Also Published As

Publication number Publication date
KR20110135145A (en) 2011-12-16

Similar Documents

Publication Publication Date Title
CN105793727B (en) Optical sensor arrangement and the method for manufacturing optical sensor arrangement
US5973337A (en) Ball grid device with optically transmissive coating
US8000564B2 (en) Photoelectric conversion module for direct optical interconnection and method of manufacturing the same
US20080013959A1 (en) Optical module and production method therefor
US8535961B1 (en) Light emitting diode (LED) package and method
US8938136B2 (en) Opto-electronic system having flip-chip substrate mounting
KR20160058591A (en) Semiconductor package having optical interconnect
TWI691044B (en) Semiconductor package device and method of manufacturing the same
US6342670B1 (en) Photoelectric module device
US11651976B2 (en) Embedded packaging concepts for integration of ASICs and optical components
US11682661B2 (en) Hermetic optical component package having organic portion and inorganic portion
US6707148B1 (en) Bumped integrated circuits for optical applications
KR101473627B1 (en) Semiconductor package
KR20110052522A (en) Optocoupler devices
CN108573964A (en) Semiconductor encapsulation device and the method for manufacturing semiconductor encapsulation device
JP2013120940A (en) Optocoupler
KR20150078874A (en) Semiconductor package with optical transceiver
CN110858584A (en) Light emitting module and light emitting serial device
US11637211B2 (en) Optically clear thermal spreader for status indication within an electronics package
KR101423132B1 (en) Semiconductor package
US7759753B2 (en) Integrated circuit die, integrated circuit package, and packaging method
JPH0832106A (en) Optical semiconductor device and substrate mounting device
US20230369169A1 (en) Optical device package preparation method and optical device package
KR101169228B1 (en) Optical Waveguide Embedded Photoelectric Conversion Module
KR100856497B1 (en) Photoelectric conversion module

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20190930

Year of fee payment: 6