KR101345556B1 - Semiconductor package having functions of wireless signal transmission and wireless power driving and heat dissipation - Google Patents

Semiconductor package having functions of wireless signal transmission and wireless power driving and heat dissipation Download PDF

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KR101345556B1
KR101345556B1 KR1020100054895A KR20100054895A KR101345556B1 KR 101345556 B1 KR101345556 B1 KR 101345556B1 KR 1020100054895 A KR1020100054895 A KR 1020100054895A KR 20100054895 A KR20100054895 A KR 20100054895A KR 101345556 B1 KR101345556 B1 KR 101345556B1
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South Korea
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power
substrate
signal
unit
chip
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KR1020100054895A
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Korean (ko)
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KR20110135149A (en
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부경택
배준영
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에스티에스반도체통신 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

A semiconductor package having improved heat dissipation effect is disclosed. To this end, the present invention includes a substrate including a power transmitter configured to transmit wireless power, at least one semiconductor chip mounted on the substrate, and a thermoelectric portion in contact with the semiconductor chip and including a power receiver and a thermoelectric element, The power receiver is configured to receive the wireless power from the power transmitter to supply the power of the thermoelectric element, the thermoelectric element having n-type and p-type impurity elements, n-type and p-type impurities arranged alternately with each other. A plurality of conductive members disposed above and below the elements, the plurality of conductive members electrically connecting the n-type and p-type impurity elements, and a power wiring electrically connected between the power receiver and a portion of the conductive members. It is done.

Description

Semiconductor package having functions of wireless signal transmission and wireless power driving and heat dissipation

The present invention relates to a semiconductor package, and more particularly, to a semiconductor package having wireless signal transmission, wireless power supply driving, and heat dissipation functions.

The thermoelectric module is operated by a direct current power source. In order to electrically connect a conventional thermoelectric module, a wire and ball bonding or a trough silicon via (TSV) process is used. However, due to such interconnection, the heat to be emitted by the thermoelectric module is transferred to the semiconductor chip again, resulting in problems such as failure and life span of the semiconductor package.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor package improved in heat radiation effect.

A semiconductor package according to an aspect of the present invention is provided. The semiconductor package includes a substrate including a power transmitter configured to transmit wireless power, at least one semiconductor chip mounted on the substrate, and a thermoelectric part in contact with the semiconductor chip and including a power receiver and a thermoelectric element. And the power receiver is configured to receive the wireless power from the power transmitter to supply power of the thermoelectric element, wherein the thermoelectric element is n-type and p-type impurity elements arranged alternately with each other, the n- A plurality of conductive members disposed above and below the type and p-type impurity elements, and electrically connecting the n-type and p-type impurity elements in series, and between a portion of the conductive members and the power receiver; It may include a power wiring connected to.

Since the semiconductor package according to the embodiments of the present invention is supplied with electric power to the thermoelectric module by using wireless power, it is possible to prevent the heat radiation effect from being reduced due to the metal wiring connected from the thermoelectric module to the substrate or the semiconductor chip have.

1 is a cross-sectional view illustrating a substrate in a semiconductor package in accordance with some embodiments of the present invention.
2 is a schematic view for explaining the operation principle of the thermoelectric module of FIG.
3 is a perspective view schematically showing an example of the thermoelectric module of FIG.
4 is a block diagram specifically illustrating a power transmitter of a wireless power unit of a substrate according to some embodiments of the present invention.
5 is a block diagram specifically illustrating a power receiving unit of a wireless power unit of a substrate according to some embodiments of the present invention
6 schematically illustrates a semiconductor package in accordance with some embodiments of the present invention.
7 schematically illustrates a semiconductor package according to other embodiments of the present invention.
8 and 9 are a perspective view and a cross-sectional view schematically showing a semiconductor package according to embodiments of the inventive concept.
10 is a schematic cross-sectional view of a semiconductor package in accordance with some example embodiments of the inventive concepts.
11 to 15 are cross-sectional views schematically illustrating semiconductor packages according to exemplary embodiments of the inventive concept.
16 to 19 schematically illustrate a substrate wireless signal unit in a semiconductor package according to embodiments of the inventive concept.
20 is a perspective view schematically illustrating a semiconductor package according to example embodiments of the inventive concept.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art, and the following embodiments may be modified in various other forms, The present invention is not limited to the following embodiments. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

1 is a cross-sectional view showing a substrate 1 in a semiconductor package according to some embodiments of the present invention.

1, the substrate 1 includes a base 10, a wireless power supply 30, and a thermal power supply 70. Further, the substrate 1 may further include a heat sink (90). The base portion 10 includes a first side 12 and a second side 14 opposite the first side 12. The wiring 16 may be located on the first side 12. The wireless power supply unit 30 may be positioned on a partial area of the first surface 12 and the mounting area 18 where the semiconductor chips are mounted may be located. The wireless power supply unit 30 and the mounting area 18 can be electrically connected by the wiring 16. [ On the second side 14, the entire heat 70 can be located. The thermal fronts 70 may be glued onto the second side 14 using an adhesive layer 76. The adhesive layer 76 may be a solder, a metal epoxy, a metal paste, a resin-based epoxy, or an adhesive tape excellent in heat resistance. The heat sink 90 can be positioned at the lower side of the heat sink 70, that is, at a position facing the base 10.

The base 10 may include an epoxy resin, a polyimide resin, a bismaleimide triazine (BT) resin, FR-4 (Flame Retardant 4), FR-5, ceramic, silicone, or glass, And the present invention is not limited thereto. The base 10 may be a single layer or may include a multi-layer structure including wiring patterns therein. For example, the base 10 may be a rigid flat plate, a plurality of rigid flat plates adhered to each other, or a thin flexible printed circuit board and a rigid flat plate adhered to each other. The plurality of rigid flat plates, or the printed circuit boards, which are adhered to each other, may each include a wiring pattern. In addition, the base 10 may be a low temperature co-fired ceramic (LTCC) substrate. The LTCC substrate may include a plurality of ceramic layers stacked, and may include a wiring pattern therein.

The wireless power supply unit 30 can receive power signals from the outside wirelessly and supply power to the semiconductor chips mounted on the base unit 10 and the mounting area 18. [ The wireless power supply unit 30 may be a radio frequency (RF) wave or a radiative system using ultrasound waves, an inductive coupling system using magnetic induction, or a non-radiative type using magnetic resonance non-radiative manner.

The radial method is a method of wirelessly transmitting energy using an antenna such as monopole or planar inverted-F (PIFA) antenna. When an electric field or a magnetic field which changes with time influences each other, radiation occurs, and when there is an antenna of the same frequency, power can be received in accordance with the polarization characteristic of the incident wave.

Inductive coupling is a method in which a coil is wound several times to generate a strong magnetic field in one direction, and coupling is generated by bringing a coil that resonates at a similar frequency.

The non-radial method employs evanescent wave coupling, which moves electromagnetic waves between two media that resonate at the same frequency through a near field.

The wireless power supply unit 30 may include a power transmission unit 200 or a power reception unit 300. That is, when the substrate 1 supplies wireless power to a semiconductor chip (not shown), the substrate 1 includes a power transmission unit 200, and when the substrate 1 is supplied with wireless power, And a power receiving unit 300. The power transmission unit 200 and the power reception unit 300 will be described with reference to FIG. 4 and FIG.

Although not shown in the drawings, the wireless power supply unit 30 may be implemented in a semiconductor chip (not shown) mounted on the substrate 1. [ In this case, the semiconductor chip may include another wireless power supply unit that receives wireless power from the power transmission unit 200 of the wireless power supply unit 30 of the substrate 1. This will be described in Fig. 6 and Fig. Similarly, the wireless power supply unit 30 may be implemented in a thermoelectric element (not shown) mounted on the substrate 1, which will be described with reference to FIG.

The thermoelectric module 70 includes a thermoelectric module 72 and a thermoelectric module wireless power unit 74. The thermoelectric module 72 may receive electric power from the thermoelectric module wireless power supply unit 74 to generate a heat flow. The thermoelectric module wireless power supply 74 may be similar to the configuration of the power receiver 300 of the wireless power supply 30 described above. The heat generated by the operation of the semiconductor chip or the like mounted on the base 10 by the thermoelectric module 72 can be released to the outside through the thermoelectric module 72 and the heat sink 90. [ The thermoelectric module 72 will be described in detail below with reference to FIGS. 2 to 4. FIG.

The heat sink 90 may include a metal, a metal nitride, a ceramic, a resin, or a combination thereof. For example, the heat sink 90 is aluminum, aluminum alloy, copper, copper alloys, aluminum oxide (Al 2 O 3), beryllium oxide (BeO), aluminum nitride (AlN), silicon nitride (SiN), an epoxy resin , Or a combination thereof. In addition, the heat sink 90 can have various dimensions and shapes for more effective heat radiation. The heat sink 90 can be attached to the heat sink 70 by solder, metal epoxy, metal paste, resin epoxy, or adhesive tape (not shown) having excellent heat resistance. The adhesive tape may be a commercially available high-temperature tape such as a known glass tape, a silicone tape, a Teflon tape, a stainless steel foil tape, a ceramic tape, or the like, and may be a tape containing aluminum oxide, aluminum nitride, silicon oxide, It is possible. The solder may also include metals such as lead (Pb), lead / tin (Pb / Sn), tin / silver (Sn / Ag), lead / tin / silver (Pb / Sn / Ag)

Fig. 2 is a schematic view for explaining the operation principle of the thermoelectric module 72 of Fig.

Referring to FIG. 2, the thermoelectric module 72 is electrically connected to the n-type impurity element 721 and the p-type impurity element 722. The n-type impurity element 721 and the p-type impurity element 722 are electrically connected to each other by an upper conductive member 725 at an upper portion thereof, spaced apart from each other at a lower portion thereof, And is connected to the power source 190. Insulating members 727 and 728 such as ceramics are formed on the upper side and the lower side of the upper conductive member 725 and the lower conductive member 726 opposite to the n-type impurity element 721 and the p-type impurity element 722, Respectively. The n-type impurity element 721 is configured to further include an n-type impurity in the medium such as silicon or silicon-germanium. Such n-type impurities may be selected from nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), sulfur (S), selenium (Se), tellurium (Te) Po). ≪ / RTI > The p-type impurity element 722 is further configured to include a p-type impurity in the medium such as silicon or silicon-germanium. The p-type impurity may be one of boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), zinc (Zn), cadmium (Cd) Or more. In addition, the n-type impurity element 721 and the p-type impurity element 722 can be constituted by using commercially available bismuth telluride (Bi 2 Te 3 ) or tellurium lead (PbTe).

When a direct current is applied to the n-type impurity element 721 and the p-type impurity element 722 by the thermoelectric module wireless power supply 74, the electrons move in the opposite direction with respect to the direction of current flow, Move in the same direction. Thus, in the n-type impurity element 721, the main carriers are electrons, and the electrons flow from the region in the downward direction opposite to the direction of the current, that is, from the region adjacent to the upper conductive member 725 to the region adjacent to the lower conductive member 726 Move. On the other hand, in the p-type impurity element 722, the main carrier is a hole, and the holes are moved from a region in the downward direction, that is, in the same direction as the direction of the current to a region adjacent to the upper conductive member 725 to a region adjacent to the lower conductive member 726 Move. As a result, the direction of movement of the electrons and the holes is the same. Due to the applied direct current, the electrons and the holes become mediums for transferring heat, and the direction of heat transfer is the same as the arrow shown. As described above, when a current is applied across different solids or semiconductors, a phenomenon in which a heat generation or an endotherm different from joule heat occurs is called a Peltier effect. Typically, this Peltier effect refers to the movement of heat as a function of the current flow when other materials, such as metals and semiconductors, form junctions with each other. In other words, in the process of absorbing the energy to move the free electrons moving by the electromotive force to the higher Fermi energy level, the heat is absorbed constantly on the side where electrons are emitted by absorbing the most easily obtainable heat energy, Heat is released continuously. 2, the n-type impurity element 721 forms a junction with the upper conductive member 725 and the lower conductive member 726 and the p-type impurity element 722 forms a junction with the upper conductive member 725, And the lower conductive member 726 are formed. As a result, the upper conductive member 725 becomes a low-temperature portion and the lower conductive member 726 becomes a high-temperature portion due to the heat transmission as described above.

1, the base portion 10 is located on the upper conductive member 725 and the heat generated by the operation of the semiconductor chip or the like mounted on the base portion 10 causes the n-type impurity element 721 and the p-type impurity element 722 toward the lower conductive member 726, and is then discharged to the outside.

This thermoelectric module 72 has the following advantages. Firstly, since it does not require a mechanical device for operation, it is easy to handle, can be reduced in size and weight, can be freely deformed in shape, has no vibration or noise, has a long life and has high reliability. It is possible. Secondly, it is possible to easily replace the cooling region and the heating region as the current direction is changed, excellent temperature responsiveness, and temperature control at room temperature is possible. Third, it does not use refrigerant like CFC, so it is environment-friendly and has excellent durability.

3 is a perspective view schematically showing an example of the thermoelectric module 72 of FIG.

3, the thermoelectric module 72 includes an impurity element array 723, conductive members 725 and 726, a power wiring 729, and insulating members 727 and 728. In the impurity element arranging unit 723, a plurality of n-type impurity elements 721 and a plurality of p-type impurity elements 722 as described above in FIG. 2 are alternately arranged. The plurality of conductive members 725 and 726 include upper conductive members 725 and lower conductive members 726 located on the upper side and the lower side of the impurity element array, respectively. The plurality of conductive members 725 and 726 electrically connect the plurality of n-type impurity elements 721 and the plurality of p-type impurity elements 722 electrically in series. The plurality of conductive members 725 and 726 may comprise aluminum, an aluminum alloy, copper, a copper alloy, nickel, a nickel alloy, or a combination thereof. The power wiring 729 is electrically connected to the thermoelectric module wireless power supply unit 74 and electrically connected to a part of the conductive members 725 and 726 to electrically connect the impurity element arrangement portion 723, respectively. The insulating members 727 and 728 are attached to the upper and lower sides of the plurality of conductive members 725 and 726 facing the impurity element array 723, respectively. With this configuration, the direct current applied through the power wiring 729 alternately passes through the n-type impurity elements 721 and the p-type impurity elements 722. [ As a result, the Peltier effect as described above with reference to FIG. 2 transfers heat from the upper conductive members 725 toward the lower conductive members 726, resulting in discharge to the outside.

4 is a block diagram specifically illustrating a power transmission unit of the wireless power supply unit 30 of the substrate 1 according to some embodiments of the present invention. The wireless power supply unit 30 according to this embodiment specifically shows the power transmission unit of the wireless power supply unit 30 of the board 1 of FIG. The following description will not be repeated.

The power transmission unit 200 of the wireless power supply unit 30 of the substrate 1 includes a power supply unit 210, a high frequency power drive unit 220, a first detection unit 230, a first power control unit 240, ). The power transmission section 200 may be implemented not only in the substrate 1 but also in the semiconductor chip 410 (see FIG. 6) mounted on the substrate 1. As shown in FIG.

The power supply unit 210 may receive a commercial current such as an AC current and convert it into a DC current and supply operating power to the first power control unit 240 and the RF power driving unit 220.

The high-frequency power driving unit 220 may apply a high-frequency alternating current to the power transmitting unit 250. For example, the high-frequency power driver 220 may include a switching mode power supply (SMPS) that generates the high-frequency alternating current through a high-speed switching operation.

The first detector 230 continuously measures voltage and current values supplied from the high frequency power driver 220 to the power transmitter 250 and transmits the voltage and current value information to the first power controller 240. For example, the first detection unit 230 may be a circuit including a resistance element capable of directly measuring the voltage and current values.

The first power control unit 240 may be configured to control the overall operation of the power transmission unit 200. More specifically, the first power controller 240 can receive the voltage and current values from the first detector 230 and control the driving of the high-frequency power driver 220.

More specifically, the first power controller 240 controls the high-frequency power driver 220 to modulate the width, amplitude, frequenct, and number of pulses of the high-frequency pulse, can do. By using the pulse width modulation (PWM), pulse amplitude modulation (PAM), pulse frequency modulation (PFM), pulse number modulation (PNM) 1 power control unit 240 can adjust the power of the high frequency alternating current.

The power transmitting terminal 250 may be configured to receive a high frequency alternating current from the high frequency power driving unit 220 and to transmit wireless energy to a power receiving terminal (310 in FIG. 5).

In the case of the radial system, that is, when the radio power source unit 30 uses radio frequency waves or ultrasonic waves, the power transmitter unit 250 of the radio power source unit 30 may be a monopole or planar inverted-F antenna Antenna. The antenna generates an electromagnetic wave in accordance with a high-frequency current, and the antenna of the power receiving terminal (310 in FIG. 5) generates the high-frequency current from the electromagnetic wave by receiving the electromagnetic wave.

In the case of the inductive coupling system, that is, when the radio power source unit 30 uses magnetic induction, the power transmitting terminal 250 of the radio power source unit 30 may include a coil. According to the electromagnetic induction principle, when a high frequency current is applied, the coil generates a magnetic field, and the coil of the power receiving terminal (310 of FIG. 5) generates a high frequency current from the magnetic field.

In the case of the non-radiation type, that is, when the wireless power supply unit 30 uses the magnetic field resonance, the wireless power supply unit 30 may include a resonator that generates an evanescent wave. The attenuation wave produces a steel sheet field in a short distance and the intensity decreases exponentially as the distance increases. The resonator of the power transmitter 250 may resonate at the same frequency as that of the resonator of the power receiver 310. In this case, a near field, which is a kind of energy tunnel, may be formed between the two resonators. When a high frequency current is applied, the resonator of the power transmitting terminal 250 generates a damping wave, and the damping wave can be transmitted from the resonator of the power transmitting terminal 250 to the resonator of the power receiving terminal 310 (FIG. 5) .

5 is a block diagram specifically illustrating a power receiving unit of the wireless power supply unit 30 of the substrate 1 according to some embodiments of the present invention. The wireless power supply unit 30 according to this embodiment specifically shows a power receiving unit of the wireless power supply unit 30 of the substrate 1 of FIG. The following description will not be repeated.

The power receiving unit 300 of the wireless power supply unit 30 of the substrate 1 includes a power receiving unit 310, a power converting unit 320, a second detecting unit 330, a second power controlling unit 340, 350).

The power receiving end 310 may be configured to receive wireless energy from the power transmitting end 250 of the power transmitting unit 200 and to convert the wireless energy into a high frequency alternating current. As described above, the power receiving end 310 may include an antenna, a coil, or a resonator according to the transmission mode of the wireless energy.

The power conversion unit 320 may be configured to convert a high frequency alternating current into a direct current. More specifically, the power converting section 320 may include a voltage limiting circuit and a rectifying circuit. The voltage limiting circuit may be configured to prevent the high frequency alternating current from being overpowered. The voltage limited by the voltage limiting circuit may be rectified to a direct current by the rectifying circuit. The DC current converted by the power conversion unit 320 may be transmitted to the power storage unit 350 and the second power control unit 340.

The power storage unit 350 may include a power storage element such as a capacitor and may be connected to an external circuit through terminals of the connection unit 360. [

The second detector 330 continuously measures voltage and current values supplied from the power converter 320 to the power storage unit 350 and transmits the voltage and current value information to the second power controller 340 . For example, the second detection unit 330 may be a circuit including a resistance element capable of directly measuring the voltage and current values.

The second power control unit 340 may be configured to control the overall operation of the power receiving unit 300. The second power control unit 340 can be operated by the DC current delivered by the power conversion unit 320. [ The second power control unit 340 receives the voltage and current values from the second detection unit 330 and can control the driving of the power conversion unit 320. For example, the second power control unit 340 may compare the voltage and current measured by the second detecting unit 330 with the (preset) comparison voltage and the comparison current, It is possible to control the driving of the power converter 320 so that overvoltage / overcurrent of the power converter 350 is not generated.

Although the power receiving unit 300 is shown as including the power storage unit 350 in the drawing, the power converting unit 320 may be directly connected to the connecting unit 360. In this case, The voltage and current values supplied from the converting unit 320 to the connection unit 360 may be measured and the voltage and current information may be transmitted to the second power control unit 340.

6 schematically illustrates a semiconductor package according to some embodiments of the present invention. The semiconductor package according to this embodiment may include the substrate 1 of FIG. 1, the power receiver 300 of the wireless power supply 30 of FIGS. 4 and 5, and the power transmitter 200. The following description will not be repeated.

6, the semiconductor package includes a substrate 1, at least one semiconductor chip 410 mounted on the substrate 1, and a sealing material 420 for sealing the substrate 1 and the semiconductor chip 410. [ . ≪ / RTI > The power transmission unit 200 may be implemented in the substrate 1 and the power reception unit 300 may be implemented in the semiconductor chip 410. Therefore, power can be transmitted wirelessly without connecting the semiconductor chip 410 and the substrate 1 by wire bonding, flip chip bonding, or the like.

The power transmission unit 200 implemented in the substrate 1 and the power reception unit 300 implemented in the semiconductor chip 410 may be aligned with each other. More specifically, the antenna, the coil, and the resonator, which are the power transmitter 250 of the power transmitter 200, and the antenna, the coil, and the resonator, which are the power receiver 310 of the power receiver 300, may be aligned with each other. In this case, the power receiving end 310 and the power transmitting end 250 may be aligned along a first reference line R1 in a direction perpendicular to the substrate 1.

Power loss can be prevented through the alignment of the power transmitting terminal 250 and the power receiving terminal 310. In the case of the radial transmission method, the shortest electromagnetic wave transmission distance can be realized between the antennas, so that power loss can be prevented. In the case of the induction coupling method, the maximum magnetic flux is coupled between the coils, thereby also preventing power loss. Likewise, the non-radiation method can also prevent power loss by preventing the loss of the attenuating wave whose intensity decreases exponentially.

7 schematically illustrates a semiconductor package according to another embodiment of the present invention. The semiconductor package according to this embodiment is a modification of the semiconductor package shown in Fig. The following description will not be repeated.

Referring to FIG. 7, the semiconductor package may include a first substrate 1a, a second substrate 1b, a semiconductor chip 410, and an encapsulant 420.

The first substrate 1a may include a first power transmitter 200a. The second substrate 1b may include a second power transmitter 200b. The second substrate 1b may be arranged to face the first substrate 1a. The first power transmission part 200a in the first substrate 1a and the second power transmission part 200b in the second substrate 1b are connected in parallel to the first substrate 1a or the second substrate 1b, Can be aligned with each other along the reference line R2.

The semiconductor chip 410 may be positioned between the first substrate 1a and the second substrate 1b. The semiconductor chip 410 may include a power receiving unit 300. The power receiving unit 300 implemented in the semiconductor chip 410 may be aligned with the first power transmitting unit 200 and the second power transmitting unit 200. More specifically, the first power transmitting end 250a, the second power transmitting end 250b, and the power receiving end 300 may be aligned with each other along a second reference line R2 in a direction perpendicular to the substrate 1. [

The encapsulant 420 may encapsulate the first substrate 1a, the second substrate 1b, and the semiconductor chip 410.

Generally, as the distance from the power transmitter 200 to the power receiver 300 increases, the intensity of electromagnetic waves, the number of magnetic fluxes, and the intensity of attenuation are decreased. The first power transmission unit 200a and the second power transmission unit 200b are implemented on the upper and lower sides of the semiconductor chip 410. The power transmission units 200a and 200b between the semiconductor chips 410, The difference in the intensity of the electromagnetic waves, the difference in the number of the magnetic fluxes, and the difference in intensity of the attenuation wave between the first and second antennas 300 can be prevented. Thus, uniform wireless power can be supplied to each semiconductor chip 410. [

8 and 9 are a perspective view and a cross-sectional view schematically showing a semiconductor package according to embodiments of the inventive concept.

8 and 9, the semiconductor package may include a substrate 1, a semiconductor chip 410, a thermoelectric part 70, an encapsulant 420, and a heat sink 90. Since the substrate 1, the thermoelectric part 70, and the heat sink 90 partially modify the description of the substrate 1 described with reference to FIG. 1, the descriptions thereof will be omitted.

The semiconductor chips 410 may be stacked in plural, and may be electrically connected to each other using a through silicon via (TSV) technology. The semiconductor chip 410 may contact the thermoelectric part 70, and more specifically, the semiconductor chip 410 may contact the thermoelectric part 70 through an adhesive material such as an adhesive tape 810 having excellent thermal conductivity. Can be.

The substrate 1 on which the semiconductor chip 410 is mounted may include a power transmission section 200 configured to transmit wireless power. 4, the power transmitter 200 may include a power supply 210, a first power controller 240, a first detector 230, a high frequency power driver 220, and a power transmitter 250. As described above, overlapping descriptions will be omitted.

The thermoelectric unit 70 may include a thermoelectric element 72 and a power receiver 300. In FIG. 5, the power receiver 300 may include a power receiver 310, a power converter 320, a second detector 330, a second power controller 340, and a power storage 350. As described above, overlapping descriptions will be omitted. In the present embodiment, the power receiver 300 may be configured to receive wireless power from the power transmitter 200 to supply power to the thermoelectric element 72. Therefore, the connection part 360 of the power receiver 300 and the power wire 729 of the thermoelectric element 72 may be electrically connected.

In the drawing, although the power transmitter 250 and the power receiver 310 are implemented as coils so that wireless power can be supplied through an inductive coupling method, the present invention is not limited thereto. The power transmitting terminal 250 and the power receiving terminal 310 may be implemented with an antenna or a resonator so that the electroless power can be supplied through the radial system or the non-radiating system.

The thermoelectric elements 72 in the thermal front 70 include n-type impurity elements 721, p-type impurity elements 722, conductive members 725 and 726, and power wiring 729 . The n-type and p-type impurity elements 723 may be alternately arranged. The conductive members 725 and 726 may be disposed above and below the n-type and p-type impurity elements 723 to electrically connect the n-type and p-type impurity elements 723 in series . The power wiring 729 may be electrically connected between a part of the conductive members 725 and 726 and the power receiving unit 300. More specifically, the power wiring 729 can be electrically connected to a part of the conductive members 725 and 726 and the power storage unit 350 in the power receiving unit 300, The power required for driving the thermoelectric element 72 can be supplied from the power source 350.

The encapsulant 420 may encapsulate the substrate 1, the thermoelectric part 70, and the semiconductor chip 410.

In the drawing, a structure in which the thermoelectric part 70 is disposed between the semiconductor chip 410 and the substrate 1 and the heat sink 90 is in contact with the substrate 1 is illustrated, but the present invention is not limited thereto. . That is, for example, the thermoelectric part 70 may be disposed on the semiconductor chip 410. In addition, the heat sink 90 may contact the thermoelectric part 70 disposed on the semiconductor chip 410. This will be described with reference to FIG. 10.

10 is a schematic cross-sectional view of a semiconductor package in accordance with some example embodiments of the inventive concepts. The semiconductor package according to this embodiment is a modification of the semiconductor package of FIG. 9. The following description will not be repeated.

Referring to FIG. 10, the semiconductor chip 410 may be disposed between the thermoelectric part 70 and the substrate 1. Therefore, the thermoelectric part 70 may be located on the semiconductor chip 410. The power applied to the thermoelectric part 70 is not supplied by the metal interconnection, and the wireless power is supplied by the power transmitter 200 of the substrate 1 and the power receiver 300 of the thermoelectric part 70. May be as described above. On the other hand, the power applied to the semiconductor chip 410 may be supplied by a metal wire such as the wire 820. However, the present invention is not limited thereto, and the power applied to the semiconductor chip 410 of FIG. 6 may also be supplied through wireless power, as illustrated in FIGS. 6 and 7.

The encapsulant 420 may encapsulate the substrate 1, the semiconductor chip 410, and the thermoelectric part 70. In particular, the encapsulant 420 may encapsulate the thermoelectric part 70 so that one surface of the thermoelectric part 70 is exposed. In this case, one surface of the exposed thermoelectric part 70 may contact the heat sink 90. Therefore, heat generated by the semiconductor chip 410 may be transferred to the thermoelectric part 70 through the adhesive tape 810, and the thermoelectric part 70 may radiate heat by using electrical energy received from the power receiver 300. By performing the function, the heat transferred to one surface of the exposed thermoelectric part 70 may be discharged through the heat sink 90.

Although not shown in the figure, the signal transmission between the substrate 1 and the semiconductor chip 410 can also be achieved by wireless signal transmission, not wired signal transmission. In this case, unlike the radio power which transmits only the electromagnetic wave, the radio signal transmission transmits a signal obtained by synthesizing the signal information to the electromagnetic wave. This will be described with reference to FIGS. 11 to 19.

11 to 15 are cross-sectional views schematically illustrating a semiconductor package 1000 according to example embodiments of the inventive concept. The substrate in the semiconductor package according to these embodiments is a modification of the substrate of FIG. The following description will not be repeated.

Referring to FIG. 11, the board wireless signal unit 40 may include a board signal transceiver 42, a board signal circuit unit 44, and a board signal controller 46. In addition, the semiconductor chip 410 may include a chip wireless signal unit 110. The chip wireless signal unit 110 may include a chip signal transceiver 112, a chip signal circuit 114, and a chip signal controller 116. The chip signal transmitting / receiving end 112 may be formed at a position corresponding to the board signal transmitting / receiving end 42.

The substrate signal circuitry 44 or the chip signal circuitry 114 may generate or convert signals transmitted or received at the substrate signal transceiver 42 or the chip signal transceiver 112, respectively. That is, the substrate signal circuit portion 44 or the chip signal circuit portion 114 supplies a converted or received signal for transmitting an electric signal used in the substrate 10 or the semiconductor chip 410 to the substrate 10 or the semiconductor chip 410), and so on.

The substrate signal control unit 46 or the chip signal control unit 116 controls the substrate signal sending / receiving end 42 / substrate signal circuit unit 44 or the chip signal sending / receiving end 112 / chip signal circuit unit 114 to transmit Can be controlled.

The substrate wireless signal unit 40 and the chip wireless signal unit 110 may transmit and receive a wireless signal by a proximity wireless method. Accordingly, the substrate radio signal unit 40 and the chip radio signal unit 110 can transmit or receive a radio signal by magnetic induction or electrostatic induction. Or the substrate radio signal unit 40 and the chip radio signal unit 110 may transmit or receive a radio signal through a radio frequency (RF). The substrate signal transmitting / receiving end 42 or the chip signal transmitting / receiving end 112 may each include a coil or an antenna. If the chip signal transmitting and receiving terminal 112 is formed at a position corresponding to the substrate signal transmitting and receiving terminal 42 in the case where the substrate signal transmitting and receiving terminal 42 and the chip signal transmitting and receiving terminal 112 include a coil, 42 and the chip signal transmitting / receiving end 112 are coincident with each other. When the central axes of the coils included in the substrate signal transmitting / receiving end 42 and the chip signal transmitting / receiving end 112 coincide with each other, the transmitted magnetic field can be maximally received.

All or a part of the chip wireless signal unit 110 may be formed together with semiconductor devices (not shown) formed in the semiconductor chip 410. [ For example, the chip signal circuit unit 114 and the chip signal control unit 116 may be formed together with discrete elements constituting the semiconductor device (not shown), that is, transistors, resistors, capacitors, May be formed with wiring lines for the semiconductor devices (not shown).

Alternatively, all or part of the chip wireless signal unit 110 may be additionally formed after the semiconductor elements (not shown) or separately formed and attached. For example, the chip signal transmission / reception terminal 112 may be formed as a conductive line separately on a passivation layer (not shown) formed on the semiconductor device (not shown). Or the chip signal circuit portion 114, the chip signal transmission and reception terminal 112 and the chip signal control portion 116 may be individually formed or integrally formed and then attached to the passivation layer (not shown) of the semiconductor chip 410 .

The substrate wireless signal unit 40 or the chip wireless signal unit 110 may both transmit and receive a wireless signal, or may transmit only one of a wireless signal. When the substrate wireless signal unit 40 can transmit a wireless signal, the chip wireless signal unit 110 may be configured to receive a wireless signal.

Hereinafter, the substrate radio signal unit 40 or the chip radio signal unit 110 may be represented as one component for convenience of expression. In this case, the substrate radio signal unit 40 and the chip radio signal unit 110 formed at positions corresponding to each other are formed at positions corresponding to the respective substrate signal transmission / reception ends 42 and chip signal transmission / reception ends 112 It can mean.

Referring to FIG. 12, the substrate radio signal unit 40 includes a substrate transmission signal unit 40S and a substrate reception signal unit 40E, and the chip radio signal unit 110 includes a chip transmission signal unit 110S and a chip. And a reception signal unit 110E. The substrate transmission signal unit 40S may be formed at a position corresponding to the chip reception signal unit 110E, and the substrate reception signal unit 40E may be formed at a position corresponding to the chip transmission signal unit 110S.

Referring to FIG. 13, the substrate wireless signal unit 40 includes a substrate transmission signal unit 40S and a substrate reception signal unit 40E, and the first semiconductor chip 410a and the second semiconductor chip 410b are respectively. The first chip transmit / receive signal unit 110S-a and 110E-a and the second chip transmit / receive signal unit 110S-b and 110E-b are included. The substrate transmission signal section 40S may be formed at a position corresponding to the first and second chip reception signal sections 110E-a and 110E-b, and the substrate reception signal section 40E may be formed at a position corresponding to the first and second chip reception signal sections 110E- May be formed at positions corresponding to the transmission signal sections 110S-a and 110S-b. Therefore, the first and second semiconductor chips 410a and 410b can wirelessly transmit and receive a signal by using the same substrate radio signal unit 40, that is, the same substrate transmission signal unit 40S and the substrate reception signal unit 40E . In this case, the signal transmitted from the substrate wireless signal unit 40 may further include information for selectively receiving a signal from the first semiconductor chip 410a or the second semiconductor chip 410b.

Referring to FIG. 14, the substrate wireless signal unit 40 may include the first and second substrate transmission signal units 40S-a and 40S-b and the first and second substrate reception signal units 40E-a and 40E-b. ). The first semiconductor chip 410a and the second semiconductor chip 410b each include the first chip transmit / receive signal units 110S-a and 110E-a and the second chip transmit / receive signal units 110S-b and 110E-, respectively. b).

The first substrate transmission signal part 40S-a and the first substrate reception signal part 40E-a are located at positions corresponding to the first reception signal part 110E-a and the first transmission signal part 110S-a, And the second substrate transmission signal unit 40S-b and the second substrate reception signal unit 40E-b may be formed in the second reception signal unit 110E-b and the second transmission signal unit 110S- b < / RTI > Therefore, the first and second semiconductor chips 410a and 410b are connected to a separate substrate radio signal portion, that is, the first substrate transmission / reception signal portion 40S-a and the second substrate transmission / reception signal portion 40S -b and 40E-b, signals can be wirelessly transmitted and received between the substrate 10 and the substrate 10

Here, although not shown, the first and second semiconductor chips 410a and 410b are connected to the first chip transmission / reception signal units 110S-a and 110E-a and the second chip transmission / reception signal units 110S- 110E-b). In this case, before being deposited on the substrate 10, the first semiconductor chip 410a activates the first chip transmit / receive signal parts 110S-a and 110E-a and the second chip transmit / receive signal part ( 110S-b and 110E-b) may include a process of deactivating. Similarly, before being deposited on the substrate 10, the second semiconductor chip 410b activates the second chip transmit / receive signal portions 110S-b and 110E-b and the first chip transmit / receive signal portion 110S. -a, 110E-a) may include a process of deactivating. The process of activating or deactivating the first chip transmit / receive signal sections 110S-a and 110E-a or the second chip transmit / receive signal sections 110S-b and 110E-b is similar to the semiconductor repair process, . ≪ / RTI >

Referring to FIG. 15, the substrate radio signal unit 40 includes a substrate transmission signal unit 40S and a substrate reception signal unit 40E. The first semiconductor chip 410a and the second semiconductor chip 410b each include the first chip transmit / receive signal units 110S-a and 110E-a and the second chip transmit / receive signal units 110S-b and 110E-, respectively. b). In addition, the first semiconductor chip 410a may further include first inter-chip retransmission / reception signal units 110RS-a and 110RE-a. The first interchip retransmission signal unit 110RS-a may be connected to the first chip reception signal unit 110E-a to exchange signals, and the first interchip re-reception signal unit 110RE- And can be connected to exchange signals with the unit 110S-a.

The substrate transmission signal section 40S and the substrate reception signal section 40E may be formed at positions corresponding to the first reception signal section 110E-a and the first transmission signal section 110S-a, respectively, The inter-chip transmission signal unit 110RS-a and the first inter-chip reception signal unit 110RE-a are formed at positions corresponding to the second reception signal unit 110E-b and the second transmission signal unit 110S-b, respectively . Accordingly, the first semiconductor chip 410a may wirelessly transmit and receive signals with the substrate 10 by the substrate transmit / receive signal units 40S and 40E, and the second semiconductor chip 410b may transmit / receive between the first chips. The signal units 110RS-a and 110RE-a may wirelessly transmit and receive signals to and from the substrate 10 through the first semiconductor chip 410a. In this case, the signal transmitted from the substrate transmission signal unit 40S may further include destination information for designating whether the signal destination is the first semiconductor chip 410a or the second semiconductor chip 410b. When the destination information is the first semiconductor chip 410a, the first chip reception signal unit 110S-a transfers the reception signal to a circuit inside the first semiconductor chip 410a. On the contrary, when the destination information is the second semiconductor chip 410b, the first chip reception signal unit 110S-a transfers the received signal to the first inter-chip transmission signal unit 100RS-a and the second semiconductor chip 410b. You can send

In this case, although not illustrated, the second semiconductor chip 410b may also transmit / receive second chips, which are components corresponding to the first inter-chip transmit / receive signal units 110RS-a and 110RE-a of the first semiconductor chip 410a. It may include a reception signal unit (not shown). In this case, the second inter-chip transmit / receive signal unit may wirelessly transmit / receive a signal with another semiconductor chip, for example, a third semiconductor chip (not shown) stacked on the second semiconductor chip 410b. That is, all of the semiconductor chips stacked on the substrate 1 may include a transmit / receive signal unit and an inter-chip transmit / receive signal unit. In this case, the transmit / receive signal unit may wirelessly transmit and receive a signal to and from a lower portion of the substrate or an adjacent lower semiconductor chip, and the inter-chip transmit / receive signal unit may wirelessly transmit and receive a signal to and from an adjacent upper semiconductor chip. . In addition, the inter-chip transmission / reception signal portion in the uppermost semiconductor chip may be used after being deactivated so as not to be used.

16 to 19 schematically illustrate a substrate wireless signal unit 40 in a semiconductor package according to embodiments of the inventive concept.

Referring to FIG. 16, the substrate wireless signal unit 40 includes a substrate signal transceiver 42, a substrate signal circuit unit 44, and a substrate signal controller 46. The substrate signal transmitting / receiving end 42 may be composed of a transmitting antenna and a receiving antenna, respectively. In this case, the transmitting and receiving antennas can be designed in consideration of the wavelength of RF used for signal transmission. Or the substrate signal transmitting / receiving end 42 may be a coil for transmitting and receiving signals. In the case where the substrate signal sending / receiving end 42 is formed of a coil, the transmitting and receiving may be performed together in the same coil, or may be provided with separate coils for transmitting and receiving, respectively. Hereinafter, for convenience of description, even when there is a separate transmitting coil and receiving coil will be described by showing only one.

The chip wireless signal unit 110 shown in FIGS. 11 to 15 may basically have the same configuration as the substrate wireless signal unit 40. That is, the chip signal transceiver 112, the chip signal circuit 114 and the chip signal controller 116 have the same configuration as the substrate signal transceiver 42, the substrate signal circuit 44 and the substrate signal controller 46, respectively. Can have Therefore, unless otherwise specified below, the description of the substrate wireless signal unit 40 may be equally applied to the chip wireless signal unit 110.

The substrate radio signal unit 40 includes a substrate signal transmission and reception end 42 composed of one coil. In the chip signal transceiver 112, a coil having a central axis coinciding with the coil included in the substrate signal transceiver 42 may be disposed in the same manner. However, the size of the coil included in the chip signal transmission / reception terminal 112 need not be the same as that included in the substrate signal transmission / reception terminal 42. The coil size can be adjusted to obtain the desired receive sensitivity. The positional relationship between the substrate signal sending / receiving end 42, the substrate signal circuit portion 44, and the substrate signal controlling portion 116 is not limited to the form shown in FIG. Also, the number of coils constituting the substrate signal transmitting / receiving end 42 may change as described later.

Referring to FIG. 17, the substrate signal transmitting and receiving end 42 includes two coils 42a and 42b. The first coil 42a and the second coil 42b constituting the substrate signal transmitting / receiving end 42 may be arranged to generate a magnetic field signal whose phase is inverted by 180 degrees with respect to each other. In this case, two coils having the same configuration can be used for the chip signal transmitting / receiving end 114 as well. If two coils are used in this way, differential transmission is possible and noise can be removed. Accordingly, the substrate signal circuit portion 44 may include a differential circuit.

Referring to FIG. 18, the substrate signal transmitting and receiving end 42 includes two coils 42a and 42b. At this time, the first coil 42a and the second coil 42b constituting the substrate signal transmitting / receiving end 42 are connected in parallel and arranged to generate a magnetic field signal whose phase is inverted by 180 degrees. In this case, two coils having the same configuration can be used for the chip signal transmitting / receiving end 114 as well. If two coils are used in this way, differential transmission is possible and noise can be removed. Accordingly, the substrate signal circuit portion 44 may include a differential circuit.

Referring to FIG. 19, the substrate signal transmitting and receiving end 42 includes two coils 42a and 42b. At this time, the first coil 42a and the second coil 42b constituting the substrate signal sending / receiving end 42 are connected in series and arranged so as to generate a magnetic field signal whose phase is inverted by 180 degrees. In this case, two coils having the same configuration can be used for the chip signal transmitting / receiving end 114 as well. If two coils are used in this way, differential transmission is possible and noise can be removed. Accordingly, the substrate signal circuit portion 44 may include a differential circuit.

20 is a perspective view schematically illustrating a semiconductor package according to example embodiments of the inventive concept.

Referring to FIG. 20, the semiconductor package may include a substrate 1, a semiconductor chip 410, a thermoelectric part 70, and a heat sink 90. The semiconductor package according to these embodiments is partially modified by combining the semiconductor package of FIG. 8, the semiconductor package of FIG. 10, and the semiconductor package of FIG. 11. The following description will not be repeated.

For wireless signal transmission, the first and second semiconductor chips 410a and 410b may include chip signal transceivers 110a and 110b, and the substrate 1 may include a substrate signal transceiver 40. Yes is as described above. In this case, the chip signal transceiver 110a and 110b and the board signal transceiver 40 may each include chip signal transceivers 112-a and 112b and substrate signal transceivers 42 formed at positions corresponding to each other. Can be. More specifically, the chip signal transceiver 110a and 110b and the substrate signal transceiver 40 may include coils having central axes coinciding with each other, such that the chip signal transceiver 110a and 110b and the substrate signal transceiver 40 may be different from each other. You can send and receive radio signals between each other.

In addition, although not shown in the figure, the chip signal transceiver 110a, 110b and the substrate signal transceiver 40 may be divided into two coils 42a, 42b (see FIGS. 17 and 18) and a differential circuit, respectively. It may further include. In this case, the two coils are arranged to generate a magnetic field signal whose phase is inverted by 180 degrees, so that differential transmission is possible by the differential circuit, and noise can be removed.

It is to be understood that the shape of each portion of the accompanying drawings is illustrative for a clear understanding of the present invention. It should be noted that the present invention can be modified into various shapes other than the shapes shown. Like numbers refer to like elements throughout the drawings.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of.

Claims (13)

A substrate comprising a power transmitter configured to transmit wireless power;
At least one semiconductor chip mounted on the substrate; And
A thermoelectric part in contact with the semiconductor chip and including a power receiver and a thermoelectric element,
The power receiver is configured to receive the wireless power from the power transmitter to supply power of the thermoelectric element,
The thermoelectric element includes:
N-type and p-type impurity elements arranged alternately to each other;
A plurality of conductive members disposed above and below the n-type and p-type impurity elements and electrically connecting the n-type and p-type impurity elements electrically in series; And
And a power wire electrically connected between the conductive members and the power receiver. The method of claim 1,
And the thermoelectric part is disposed on the semiconductor chip. The method of claim 1,
And the thermoelectric part is disposed between the semiconductor chip and the substrate. The method of claim 1,
And a heat sink in contact with the thermoelectric element. The method of claim 1,
And a heat sink in contact with the substrate. The method of claim 1,
The power transmitter,
A high frequency power driver configured to generate a first high frequency alternating current; And
And a power transmitter configured to generate an electromagnetic wave or a magnetic field from the first high frequency alternating current. The method according to claim 6,
The power receiver,
A power receiver configured to receive the electromagnetic wave or the magnetic field to generate a second high frequency alternating current;
A power conversion unit converting the second high frequency AC current into a DC current; And
And a power storage unit for storing power generated by the direct current. The method of claim 7, wherein
And the power transmitter and the power receiver are aligned along a reference line in a direction perpendicular to the substrate. The method of claim 7, wherein
And the power transmitter and the power receiver comprise an antenna, a coil or a resonator. A substrate comprising a high frequency power driver configured to generate a first high frequency alternating current, and a power transmitter configured to generate an electromagnetic wave or a magnetic field from the first high frequency alternating current;
At least one semiconductor chip mounted on the substrate; And
A thermoelectric part in contact with the semiconductor chip and including a power receiver and a thermoelectric element,
The power receiver includes a power receiver configured to receive the electromagnetic wave or the magnetic field to generate a second high frequency alternating current, a power converter to convert the second high frequency alternating current into a direct current, and the power generated by the direct current. It includes a power storage for storing,
The thermoelectric element includes:
N-type and p-type impurity elements arranged alternately to each other;
A plurality of conductive members disposed above and below the n-type and p-type impurity elements and electrically connecting the n-type and p-type impurity elements electrically in series; And
And a power wire electrically connected between a portion of the conductive members and the power storage unit. 11. The method of claim 10,
The semiconductor chip includes a first chip signal transceiver configured to transmit and receive a radio signal,
And the substrate comprises a first substrate signal transceiver configured to transmit and receive the wireless signal. The method of claim 11,
The first chip signal transceiver and the first substrate signal transceiver includes a coil whose center axis coincides with each other, thereby transmitting and receiving an unsigned signal between the first chip signal transceiver and the first substrate signal transceiver. Semiconductor package. The method of claim 11,
And the first chip signal transceiver and the first substrate signal transceiver include two coils and a differential circuit arranged to generate a magnetic field signal having an inverted phase of 180 degrees.
KR1020100054895A 2010-06-10 2010-06-10 Semiconductor package having functions of wireless signal transmission and wireless power driving and heat dissipation KR101345556B1 (en)

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US10411763B2 (en) 2015-02-09 2019-09-10 Tyco Electronics (Shanghai) Co. Ltd. Wireless power transmission device
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JP2007128977A (en) 2005-11-01 2007-05-24 Dainippon Printing Co Ltd Noncontact feeder system
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