KR101390530B1 - 포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 - Google Patents

포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 Download PDF

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KR101390530B1
KR101390530B1 KR1020120153728A KR20120153728A KR101390530B1 KR 101390530 B1 KR101390530 B1 KR 101390530B1 KR 1020120153728 A KR1020120153728 A KR 1020120153728A KR 20120153728 A KR20120153728 A KR 20120153728A KR 101390530 B1 KR101390530 B1 KR 101390530B1
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South Korea
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layer film
upper layer
pattern
photomask
film
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Korean (ko)
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KR20130075704A (ko
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유따까 요시까와
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020120153728A 2011-12-27 2012-12-26 포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 Active KR101390530B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011285949A JP5605917B2 (ja) 2011-12-27 2011-12-27 フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法
JPJP-P-2011-285949 2011-12-27

Related Child Applications (1)

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KR1020130101053A Division KR101927549B1 (ko) 2011-12-27 2013-08-26 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법

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KR20130075704A KR20130075704A (ko) 2013-07-05
KR101390530B1 true KR101390530B1 (ko) 2014-04-30

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KR1020120153728A Active KR101390530B1 (ko) 2011-12-27 2012-12-26 포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법
KR1020130101053A Active KR101927549B1 (ko) 2011-12-27 2013-08-26 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법

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Families Citing this family (21)

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JP6089604B2 (ja) * 2012-11-06 2017-03-08 大日本印刷株式会社 位相シフトマスクの製造方法
JP2015049282A (ja) * 2013-08-30 2015-03-16 Hoya株式会社 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP2015102608A (ja) * 2013-11-22 2015-06-04 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
JP2015106001A (ja) * 2013-11-29 2015-06-08 Hoya株式会社 フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP6391495B2 (ja) * 2015-02-23 2018-09-19 Hoya株式会社 フォトマスク、フォトマスクセット、フォトマスクの製造方法、及び表示装置の製造方法
JP6601245B2 (ja) * 2015-03-04 2019-11-06 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法
KR102614222B1 (ko) * 2015-03-12 2023-12-18 레이브 엘엘씨 간접 표면 세정장치 및 방법
JP6456748B2 (ja) 2015-03-28 2019-01-23 Hoya株式会社 フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法
JP2016224289A (ja) * 2015-06-01 2016-12-28 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
CN105717737B (zh) 2016-04-26 2019-08-02 深圳市华星光电技术有限公司 一种掩膜版及彩色滤光片基板的制备方法
JP2017033004A (ja) * 2016-09-21 2017-02-09 Hoya株式会社 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP2017076146A (ja) * 2016-12-26 2017-04-20 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
JP2017068281A (ja) * 2016-12-27 2017-04-06 Hoya株式会社 フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法
JP6659855B2 (ja) * 2017-06-28 2020-03-04 アルバック成膜株式会社 マスクブランクス、位相シフトマスク、ハーフトーンマスク、マスクブランクスの製造方法、及び位相シフトマスクの製造方法
KR102367141B1 (ko) * 2019-02-27 2022-02-23 호야 가부시키가이샤 포토마스크, 포토마스크의 제조 방법, 및 표시 장치의 제조 방법
JP7420586B2 (ja) * 2019-03-28 2024-01-23 Hoya株式会社 フォトマスク、フォトマスクの製造方法、および表示装置の製造方法
JP7214815B2 (ja) * 2020-04-28 2023-01-30 株式会社エスケーエレクトロニクス フォトマスク及びその製造方法
TWI864490B (zh) 2020-04-28 2024-12-01 日商Ｓｋ電子股份有限公司 光罩的製造方法
JP2024006265A (ja) 2022-07-01 2024-01-17 株式会社エスケーエレクトロニクス フォトマスクの製造方法及びフォトマスク
JP7450784B1 (ja) 2023-04-10 2024-03-15 株式会社エスケーエレクトロニクス フォトマスクの製造方法

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JPH09325468A (ja) * 1996-06-06 1997-12-16 Sony Corp ハーフトーン型位相シフトマスク及びその製造方法
JPH1124231A (ja) * 1997-07-01 1999-01-29 Sony Corp ハーフトーン位相シフトマスク、及びその製造方法
KR20110103872A (ko) * 2010-03-15 2011-09-21 호야 가부시키가이샤 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법

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JPH09325468A (ja) * 1996-06-06 1997-12-16 Sony Corp ハーフトーン型位相シフトマスク及びその製造方法
JPH1124231A (ja) * 1997-07-01 1999-01-29 Sony Corp ハーフトーン位相シフトマスク、及びその製造方法
KR20110103872A (ko) * 2010-03-15 2011-09-21 호야 가부시키가이샤 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법

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Publication number Publication date
TW201329615A (zh) 2013-07-16
JP2013134435A (ja) 2013-07-08
TWI468853B (zh) 2015-01-11
KR20130075704A (ko) 2013-07-05
KR20130102522A (ko) 2013-09-17
KR101927549B1 (ko) 2018-12-10
JP5605917B2 (ja) 2014-10-15

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