JP5605917B2 - フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法 - Google Patents
フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法 Download PDFInfo
- Publication number
- JP5605917B2 JP5605917B2 JP2011285949A JP2011285949A JP5605917B2 JP 5605917 B2 JP5605917 B2 JP 5605917B2 JP 2011285949 A JP2011285949 A JP 2011285949A JP 2011285949 A JP2011285949 A JP 2011285949A JP 5605917 B2 JP5605917 B2 JP 5605917B2
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- layer film
- pattern
- manufacturing
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011285949A JP5605917B2 (ja) | 2011-12-27 | 2011-12-27 | フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法 |
| TW101145872A TWI468853B (zh) | 2011-12-27 | 2012-12-06 | 光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法 |
| KR1020120153728A KR101390530B1 (ko) | 2011-12-27 | 2012-12-26 | 포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 |
| KR1020130101053A KR101927549B1 (ko) | 2011-12-27 | 2013-08-26 | 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011285949A JP5605917B2 (ja) | 2011-12-27 | 2011-12-27 | フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014003941A Division JP5993386B2 (ja) | 2014-01-14 | 2014-01-14 | フォトマスク及びフラットパネルディスプレイの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013134435A JP2013134435A (ja) | 2013-07-08 |
| JP2013134435A5 JP2013134435A5 (https=) | 2013-09-26 |
| JP5605917B2 true JP5605917B2 (ja) | 2014-10-15 |
Family
ID=48911139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011285949A Active JP5605917B2 (ja) | 2011-12-27 | 2011-12-27 | フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5605917B2 (https=) |
| KR (2) | KR101390530B1 (https=) |
| TW (1) | TWI468853B (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6089604B2 (ja) * | 2012-11-06 | 2017-03-08 | 大日本印刷株式会社 | 位相シフトマスクの製造方法 |
| JP2015049282A (ja) * | 2013-08-30 | 2015-03-16 | Hoya株式会社 | 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
| JP2015102608A (ja) * | 2013-11-22 | 2015-06-04 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法 |
| JP2015106001A (ja) * | 2013-11-29 | 2015-06-08 | Hoya株式会社 | フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
| JP6391495B2 (ja) * | 2015-02-23 | 2018-09-19 | Hoya株式会社 | フォトマスク、フォトマスクセット、フォトマスクの製造方法、及び表示装置の製造方法 |
| JP6601245B2 (ja) * | 2015-03-04 | 2019-11-06 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法 |
| KR102614222B1 (ko) * | 2015-03-12 | 2023-12-18 | 레이브 엘엘씨 | 간접 표면 세정장치 및 방법 |
| JP6456748B2 (ja) | 2015-03-28 | 2019-01-23 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法 |
| JP2016224289A (ja) * | 2015-06-01 | 2016-12-28 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及び表示装置の製造方法 |
| CN105717737B (zh) | 2016-04-26 | 2019-08-02 | 深圳市华星光电技术有限公司 | 一种掩膜版及彩色滤光片基板的制备方法 |
| JP2017033004A (ja) * | 2016-09-21 | 2017-02-09 | Hoya株式会社 | 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
| JP2017076146A (ja) * | 2016-12-26 | 2017-04-20 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法 |
| JP2017068281A (ja) * | 2016-12-27 | 2017-04-06 | Hoya株式会社 | フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
| JP7080070B2 (ja) * | 2017-03-24 | 2022-06-03 | Hoya株式会社 | フォトマスク、及び表示装置の製造方法 |
| JP6659855B2 (ja) * | 2017-06-28 | 2020-03-04 | アルバック成膜株式会社 | マスクブランクス、位相シフトマスク、ハーフトーンマスク、マスクブランクスの製造方法、及び位相シフトマスクの製造方法 |
| KR102367141B1 (ko) * | 2019-02-27 | 2022-02-23 | 호야 가부시키가이샤 | 포토마스크, 포토마스크의 제조 방법, 및 표시 장치의 제조 방법 |
| JP7420586B2 (ja) * | 2019-03-28 | 2024-01-23 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法、および表示装置の製造方法 |
| JP7214815B2 (ja) * | 2020-04-28 | 2023-01-30 | 株式会社エスケーエレクトロニクス | フォトマスク及びその製造方法 |
| TWI864490B (zh) | 2020-04-28 | 2024-12-01 | 日商Sk電子股份有限公司 | 光罩的製造方法 |
| JP2024006265A (ja) | 2022-07-01 | 2024-01-17 | 株式会社エスケーエレクトロニクス | フォトマスクの製造方法及びフォトマスク |
| JP7450784B1 (ja) | 2023-04-10 | 2024-03-15 | 株式会社エスケーエレクトロニクス | フォトマスクの製造方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2624351B2 (ja) * | 1990-02-21 | 1997-06-25 | 松下電子工業株式会社 | ホトマスクの製造方法 |
| JPH05134384A (ja) * | 1991-11-08 | 1993-05-28 | Fujitsu Ltd | レチクルの作成方法 |
| JP2501383B2 (ja) * | 1991-12-12 | 1996-05-29 | ホーヤ株式会社 | 位相シフトマスクブランク及び位相シフトマスク |
| JPH07134389A (ja) * | 1993-06-25 | 1995-05-23 | Hoya Corp | 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法 |
| JPH08272071A (ja) * | 1995-03-30 | 1996-10-18 | Toppan Printing Co Ltd | 位相シフトマスクとその製造方法、ならびにマスクブランク |
| JP3209257B2 (ja) * | 1995-04-21 | 2001-09-17 | 凸版印刷株式会社 | 位相シフトマスク及びその製造方法 |
| JP3244107B2 (ja) * | 1995-06-02 | 2002-01-07 | 凸版印刷株式会社 | ハーフトーン型位相シフトマスク及びその製造方法 |
| JPH09325468A (ja) * | 1996-06-06 | 1997-12-16 | Sony Corp | ハーフトーン型位相シフトマスク及びその製造方法 |
| JPH1031300A (ja) * | 1996-07-12 | 1998-02-03 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク及びその製造方法 |
| JP3636838B2 (ja) * | 1996-09-06 | 2005-04-06 | Hoya株式会社 | ハーフトーン型位相シフトマスク及びその製造方法 |
| JPH1124231A (ja) * | 1997-07-01 | 1999-01-29 | Sony Corp | ハーフトーン位相シフトマスク、及びその製造方法 |
| CN1661480A (zh) * | 1999-11-08 | 2005-08-31 | 松下电器产业株式会社 | 一种图案形成方法 |
| JP2001142195A (ja) * | 1999-11-16 | 2001-05-25 | Nec Corp | 近接効果補正マスク |
| JP2001291661A (ja) * | 2000-04-07 | 2001-10-19 | Fujitsu Ltd | 反射型マスク製造方法 |
| DE10307518B4 (de) * | 2002-02-22 | 2011-04-14 | Hoya Corp. | Halbtonphasenschiebermaskenrohling, Halbtonphasenschiebermaske und Verfahren zu deren Herstellung |
| TWI305865B (en) * | 2003-03-31 | 2009-02-01 | Shinetsu Chemical Co | Photomask blank, photomask, and method of manufacture |
| JP4009219B2 (ja) * | 2003-04-10 | 2007-11-14 | 松下電器産業株式会社 | フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法 |
| JP2008090245A (ja) * | 2006-09-29 | 2008-04-17 | Shinetsu Sasaki | 新弦 |
| JP5588633B2 (ja) * | 2009-06-30 | 2014-09-10 | アルバック成膜株式会社 | 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク |
| TWI461833B (zh) * | 2010-03-15 | 2014-11-21 | Hoya股份有限公司 | 多調式光罩、多調式光罩之製造方法及圖案轉印方法 |
-
2011
- 2011-12-27 JP JP2011285949A patent/JP5605917B2/ja active Active
-
2012
- 2012-12-06 TW TW101145872A patent/TWI468853B/zh active
- 2012-12-26 KR KR1020120153728A patent/KR101390530B1/ko active Active
-
2013
- 2013-08-26 KR KR1020130101053A patent/KR101927549B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201329615A (zh) | 2013-07-16 |
| JP2013134435A (ja) | 2013-07-08 |
| TWI468853B (zh) | 2015-01-11 |
| KR20130075704A (ko) | 2013-07-05 |
| KR101390530B1 (ko) | 2014-04-30 |
| KR20130102522A (ko) | 2013-09-17 |
| KR101927549B1 (ko) | 2018-12-10 |
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