KR101388297B1 - 마이크로리소그래픽 투사노출장치의 투사대물렌즈 - Google Patents

마이크로리소그래픽 투사노출장치의 투사대물렌즈 Download PDF

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Publication number
KR101388297B1
KR101388297B1 KR1020070082272A KR20070082272A KR101388297B1 KR 101388297 B1 KR101388297 B1 KR 101388297B1 KR 1020070082272 A KR1020070082272 A KR 1020070082272A KR 20070082272 A KR20070082272 A KR 20070082272A KR 101388297 B1 KR101388297 B1 KR 101388297B1
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KR
South Korea
Prior art keywords
lens
projection objective
lens elements
objective lens
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020070082272A
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English (en)
Korean (ko)
Other versions
KR20080015755A (ko
Inventor
다니엘 크래머
요하네스 루오프
Original Assignee
칼 짜이스 에스엠티 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 칼 짜이스 에스엠티 게엠베하 filed Critical 칼 짜이스 에스엠티 게엠베하
Publication of KR20080015755A publication Critical patent/KR20080015755A/ko
Application granted granted Critical
Publication of KR101388297B1 publication Critical patent/KR101388297B1/ko
Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
KR1020070082272A 2006-08-15 2007-08-16 마이크로리소그래픽 투사노출장치의 투사대물렌즈 Expired - Fee Related KR101388297B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US82242706P 2006-08-15 2006-08-15
DE102006038398A DE102006038398A1 (de) 2006-08-15 2006-08-15 Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage
US?60/822,427? 2006-08-15
DE?102006038398.2 2006-08-15

Publications (2)

Publication Number Publication Date
KR20080015755A KR20080015755A (ko) 2008-02-20
KR101388297B1 true KR101388297B1 (ko) 2014-04-22

Family

ID=38954802

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070082272A Expired - Fee Related KR101388297B1 (ko) 2006-08-15 2007-08-16 마이크로리소그래픽 투사노출장치의 투사대물렌즈

Country Status (8)

Country Link
US (1) US7679831B2 (https=)
EP (1) EP1890193B1 (https=)
JP (1) JP5317156B2 (https=)
KR (1) KR101388297B1 (https=)
CN (1) CN101126907B (https=)
AT (1) ATE486302T1 (https=)
DE (2) DE102006038398A1 (https=)
TW (1) TWI425245B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008087827A1 (ja) * 2007-01-16 2008-07-24 Nikon Corporation 結像光学系、露光装置、およびデバイス製造方法
JP2008216498A (ja) 2007-03-01 2008-09-18 Canon Inc 投影光学系、露光装置及びデバイス製造方法
JP2009031603A (ja) * 2007-07-27 2009-02-12 Canon Inc 投影光学系、露光装置及びデバイス製造方法
JP2009086038A (ja) * 2007-09-27 2009-04-23 Canon Inc 投影光学系、露光装置及びデバイス製造方法
CN111302297A (zh) * 2020-02-17 2020-06-19 福建晶安光电有限公司 图形化镥铝石榴石晶片结构及其制备方法、包括该结构的发光装置封装件和投影仪

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1020197A (ja) * 1996-06-28 1998-01-23 Nikon Corp 反射屈折光学系及びその調整方法
JP2002107632A (ja) * 2000-08-22 2002-04-10 Carl Zeiss:Fa 投影照射装置
JP2005521227A (ja) * 2001-06-01 2005-07-14 エイエスエムエル ネザランドス ベスローテン フェンノートシャップ 立方晶系光学系における複屈折の補正

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2699706A (en) * 1949-11-08 1955-01-18 Boone Philip Ornamental object having birefringent and polarizing layers
DE60124524T2 (de) * 2000-04-25 2007-03-08 Asml Holding, N.V. Optisches reduktionssystem mit kontrolle der belichtungspolarisation
JP2004526331A (ja) * 2001-05-15 2004-08-26 カール・ツアイス・エスエムテイ・アーゲー フッ化物結晶レンズを含む対物レンズ
US6775063B2 (en) * 2001-07-10 2004-08-10 Nikon Corporation Optical system and exposure apparatus having the optical system
DE10133841A1 (de) * 2001-07-18 2003-02-06 Zeiss Carl Objektiv mit Kristall-Linsen
US6844972B2 (en) * 2001-10-30 2005-01-18 Mcguire, Jr. James P. Reducing aberration in optical systems comprising cubic crystalline optical elements
US7075720B2 (en) 2002-08-22 2006-07-11 Asml Netherlands B.V. Structures and methods for reducing polarization aberration in optical systems
US7239450B2 (en) * 2004-11-22 2007-07-03 Carl Zeiss Smt Ag Method of determining lens materials for a projection exposure apparatus
JP2008532273A (ja) * 2005-02-25 2008-08-14 カール ツァイス エスエムテー アクチエンゲゼルシャフト マイクロ・リソグラフィー投影露光装置のための光学システム
DE102006013560A1 (de) 2005-04-19 2006-10-26 Carl Zeiss Smt Ag Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage sowie Verfahren zu dessen Herstellung
DE102006025044A1 (de) 2005-08-10 2007-02-15 Carl Zeiss Smt Ag Abbildungssystem, insbesondere Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1020197A (ja) * 1996-06-28 1998-01-23 Nikon Corp 反射屈折光学系及びその調整方法
JP2002107632A (ja) * 2000-08-22 2002-04-10 Carl Zeiss:Fa 投影照射装置
JP2005521227A (ja) * 2001-06-01 2005-07-14 エイエスエムエル ネザランドス ベスローテン フェンノートシャップ 立方晶系光学系における複屈折の補正

Also Published As

Publication number Publication date
TWI425245B (zh) 2014-02-01
DE102006038398A1 (de) 2008-02-21
KR20080015755A (ko) 2008-02-20
US20080043331A1 (en) 2008-02-21
ATE486302T1 (de) 2010-11-15
CN101126907B (zh) 2013-06-12
US7679831B2 (en) 2010-03-16
JP5317156B2 (ja) 2013-10-16
CN101126907A (zh) 2008-02-20
DE602007010060D1 (de) 2010-12-09
EP1890193B1 (en) 2010-10-27
TW200831943A (en) 2008-08-01
JP2008046641A (ja) 2008-02-28
EP1890193A1 (en) 2008-02-20

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