KR101386367B1 - Two-sided adhesive tape for semiconductor processing and tape for semiconductor processing - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is a double-sided adhesive tape for semiconductor processing used to bond a semiconductor wafer and a support plate to reinforce a semiconductor wafer during the manufacture of an IC chip. It is an object to provide a double-sided adhesive tape for semiconductor processing that can be peeled off. The present invention is a double-sided pressure-sensitive adhesive tape for semiconductor processing used to bond a semiconductor wafer and a support plate to reinforce the semiconductor wafer during the manufacture of an IC chip, comprising a base material and a pressure-sensitive adhesive layer formed on both sides of the base material. The adhesive layer of the side to adhere | attach contains a gas generator which generate | occur | produces a gas by magnetic pole, and the mold release process of a dot shape is given to the said base material of the side which contact | connects the adhesive layer of the side which adhere | attaches the support plate, It is a double-sided adhesive tape for semiconductor processing in which x and y exist in the range enclosed by the broken line A, the broken line B, and the broken line C of FIG. 4 when the diameter of the dot which performed the mold release process was set to y and the number of dots per 1 cm <2>.

Description

Double sided adhesive tape for semiconductor processing and tape for semiconductor processing {TWO-SIDED ADHESIVE TAPE FOR SEMICONDUCTOR PROCESSING AND TAPE FOR SEMICONDUCTOR PROCESSING}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is a double-sided adhesive tape for semiconductor processing used to bond a semiconductor wafer and a support plate to reinforce a semiconductor wafer during the manufacture of an IC chip. It relates to a double-sided adhesive tape for semiconductor processing that can be peeled off. The present invention further relates to a tape for semiconductor processing for affixing to a semiconductor and protecting it during processing of the semiconductor having a reduced pressure heating step.

In the manufacturing process of an IC chip, when a thick-film semiconductor wafer cut out from a high-purity silicon single crystal or the like is ground to a predetermined thickness to form a thin film semiconductor wafer, the semiconductor wafer is bonded to a supporting plate and reinforced to work efficiently. A method of advancing is proposed. At this time, the double-sided adhesive tape for adhering the semiconductor wafer and the support plate is firmly adhered during the grinding step, and after completion of the grinding step, it is required to peel off the support plate without damaging the obtained thin film wafer. In particular, in recent years, complex circuits have been formed on the surface of IC chips, and circuit wafers having very irregularities on the surface have been manufactured, and it is strongly required to achieve high tracking of such irregularities on the surface and ease of peeling at the time of peeling. Coming.

The method of peeling an adhesive tape can think about peeling by applying a physical force, for example. However, in this method, when the adherend is fragile, serious damage may occur. Moreover, the method of peeling an adhesive tape using the solvent which can melt | dissolve an adhesive can also be considered. However, this method cannot be used also when the adherend is invaded by a solvent.

Thus, the adhesive tape used for adhesion once had the problem that it was difficult to peel, without damaging a to-be-adhered body, so that adhesive force was strong.

In contrast, Patent Document 1 fixes a semiconductor wafer to a support plate via a double-sided adhesive tape having a pressure-sensitive adhesive layer containing a gas generator that generates gas by irradiating light into the photocurable pressure-sensitive adhesive, and in this state Disclosed is a method for manufacturing an IC chip which performs a process such as grinding. When light is irradiated to such a double-sided adhesive tape, an adhesive hardens | cures by light irradiation, an elasticity modulus rises, and gas generate | occur | produces from a gas generating agent. The gas generated in the pressure-sensitive adhesive layer in which the elastic modulus is increased is released from the pressure-sensitive adhesive layer at high efficiency, and at least a part of the adhesive surface is peeled off. Therefore, when using such a double-sided adhesive tape, even when manufacturing an ultra-thin IC chip which is very fragile, by irradiating light to the double-sided adhesive tape, the double-sided adhesive tape can be easily removed from the wafer without damage. It can be peeled off.

In the double-sided adhesive tape of patent document 1, the effect that an azo compound is especially preferable as a gas generating agent is described. This is because the azo compound is very easy to handle, there is no risk of damaging the adherend because it does not generate a cascade of explosive gas, and the generation of gas can be stopped when the UV irradiation is stopped. It is because there are various advantages, such as the control of adhesiveness suitable for a use. However, since an azo compound decomposes | disassembles by about 150 degreeC heat | fever, it was not necessarily enough from a heat resistant point of view. For example, in the manufacturing method of the above-mentioned IC chip, the metal thin film formation process etc. by sputtering may be performed recently, and in such a process, it is not uncommon for the surface temperature of a wafer to exceed 150 degreeC. . When going through such a high temperature process, desired peelability might not be exhibited by the adhesive tape using the conventional azo compound.

In contrast, Patent Document 1 also describes an azide compound as a gas generating agent. Moreover, also in patent document 2, the adhesive for fixing a semiconductor with high peelability containing an azide compound is described. Since an azide compound is excellent in heat resistance compared with an azo compound, when using an azide compound, even if it uses for the application which has a high temperature process, it was expected that sufficient peeling performance will be obtained. In practice, however, there has been a problem that sufficient peeling performance is not obtained even when an azide compound is used.

In manufacture of a semiconductor, in order to make it easy to handle a semiconductor at the time of a process, and to prevent it from being damaged, the tape for a semiconductor process is stuck. For example, when a thick film wafer cut out from a high purity silicon single crystal or the like is ground to a predetermined thickness to form a thin film wafer, a double-sided adhesive tape is used when the thick film wafer is adhered to the support plate and reinforced. In addition, when dicing a thin film wafer ground to a predetermined thickness onto an individual IC chip, an adhesive tape called a dicing tape is used.

The tape for semiconductor processing is required to be able to peel, without damaging a semiconductor after completion | finish of a process, with adhesiveness high enough to firmly fix a semiconductor during a process process. On the other hand, in patent document 3, the adhesive tape using the photocurable adhesive which hardens by irradiating light, such as an ultraviolet-ray, and whose adhesive force falls is disclosed. Such an adhesive tape can be reliably fixed to a semiconductor during a processing process, and can be easily peeled off by irradiating an ultraviolet-ray or the like.

In recent years, with the diversification of the mounting method of a semiconductor, the process which heats a wafer under high pressure reduction in the state which stuck the adhesive tape is increasing. As a process which has such a reduced pressure heating process, chemical vapor deposition, physical vapor deposition, sputtering, dry etching, plating etc. are mentioned, for example. However, when the adhesive tape using the conventional photocurable adhesive was used at the time of processing of the semiconductor which has a pressure reduction heating process, there existed a problem that even before irradiating an ultraviolet-ray etc., it might peel. Such peeling was remarkable especially when unevenness | corrugation, such as a circuit, was formed in the non-adhesion surface.

Japanese Unexamined Patent Publication No. 2003-231872 Japanese Unexamined Patent Publication No. 2001-200234 Japanese Unexamined Patent Publication No. 5-32946

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is a double-sided adhesive tape for semiconductor processing used to bond a semiconductor wafer and a support plate to reinforce a semiconductor wafer during the manufacture of an IC chip, and is easily and surely provided between the double-sided adhesive tape for semiconductor processing and a support plate by applying a stimulus. It is an object to provide a double-sided adhesive tape for semiconductor processing that can be peeled off. An object of this invention is also to provide the tape for a semiconductor process for affixing on a semiconductor and protecting this at the time of the process of the semiconductor which has a pressure reduction heating process.

A first aspect of the present invention is a double-sided adhesive tape for semiconductor processing used to bond a semiconductor wafer and a support plate to reinforce a semiconductor wafer during the manufacture of an IC chip, and comprises a base material and an adhesive layer formed on both sides of the base material. The adhesive layer of the side which adhere | attaches a support plate contains the gas generating agent which generate | occur | produces a gas by magnetic pole, and the dot-shaped mold release process is given to the said base material of the side which contact | connects the adhesive layer of the side which adhere | attaches with the support plate. When the diameter of the dot which performed the mold release process was set to y and the number of dots per 1 cm <2> is y, x and y are double-sided adhesive tapes for semiconductor processing in the range surrounded by the broken line A, the broken line B, and the broken line C of FIG. .

2nd this invention is a tape for semiconductor processing which affixes to a semiconductor at the time of processing of the semiconductor which has a pressure reduction heating process, and protects it, It is 7-20 with respect to 100 weight part of photocurable adhesives on at least one surface of a base material. It has an adhesive layer containing a weight part of silica fine particles, and the said silica fine particle is a tape for semiconductor processing disperse | distributing in the said adhesive layer so that an average particle diameter may be 1.0 micrometer or less, and a maximum particle diameter may be 5.0 micrometers or less.

Hereinafter, the present invention will be described in detail.

The double-sided adhesive tape for semiconductor processing of 1st this invention is demonstrated in detail.

MEANS TO SOLVE THE PROBLEM The present inventors examined the stress applied to a wafer at the time of peeling the wafer and support plate bonded by a double-sided adhesive tape. As a result, it was concluded that the greatest stress was applied to the wafer when the rigid bodies such as the wafer and the support plate were peeled off. At the time of peeling, if it can be peeled off between the double-sided adhesive tape and the supporting plate first, the remaining flexible double-sided adhesive tape can be peeled off from the wafer so that the wafer is hardly damaged during this peeling.

Thus, in order to peel a wafer and a support plate first, it can be considered to contain a gas generating agent only in the adhesive layer of the side which adhere | attaches with the support plate of a double-sided adhesive tape, for example. However, it has been found that even when the wafer and the support plate adhered by such a double-sided adhesive tape are stimulated to generate gas from the gas generating agent, the support plate cannot actually be peeled off in many cases. This was considered to be because even if the support plate was once peeled off due to the generation of gas, the self-weight of the support plate itself prevented it from coming into close contact with the pressure-sensitive adhesive layer again (hereinafter, also referred to as "re-adhesion").

As a result of earnestly examining, the present inventors performed a dot-shaped release process on the base material of the side which contact | connects the adhesive layer which contained the gas generating agent on the side which adhere | attaches a support plate, and can reliably peel a support plate only by giving a stimulus. It became possible to find out and to complete this invention.

The mechanism of support plate peeling at the time of using the double-sided adhesive tape (henceforth simply "double-sided adhesive tape" for semiconductor processing) of 1st this invention is demonstrated in detail using drawing.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram when the support plate and the semiconductor wafer which were adhere | attached using the double-sided adhesive tape which has the adhesive layer which contained the gas generating agent on the side which adhere | attaches with the conventional support plate, and a magnetic pole (light) are given. In Fig.1 (a), the semiconductor wafer 1 and the support plate 2 are adhere | attached through the double-sided adhesive tape 3. Here, the double-sided adhesive tape 3 is provided with the adhesive layer 32 and the adhesive 33 on both surfaces of the base material 31, and the adhesive layer 32 on the side which adhere | attaches a support plate is a base material by light irradiation. It contains the gas generating agent to generate | occur | produce. When light is irradiated to such a laminated body, gas will generate | occur | produce from the gas generating agent contained in the adhesive layer 32. The generated gas is about to come out of the pressure-sensitive adhesive layer 32, and since most of the adhesion between the substrate and the adhesive layer is higher than the adhesion between the substrate and the support plate, most of the gas is released to the adhesive interface between the substrate and the support plate. At least a part of the adhesive interface between the substrate and the support plate is peeled off by the pressure of the released gas, and the support plate is peeled off (Fig. 1 (b)). By the way, even if it peels once, it adheres to the adhesive layer again (re-adherence) by the weight of the support plate itself, and it cannot become peeling (FIG. 1 (c)).

FIG. 2: is a schematic diagram at the time of giving magnetic pole (light) to the support plate and semiconductor wafer which were adhere | attached using the double-sided adhesive tape of this invention. In FIG. 2A, the semiconductor wafer 1 and the support plate 2 are bonded to each other via a double-sided adhesive tape 4. Here, the double-sided adhesive tape 4 has the adhesive layer 42 and the adhesive layer 43 formed in both surfaces of the base material 41, and the adhesive layer 42 of the side which adhere | attaches a support plate is a base material by light irradiation. It contains a gas generating agent for generating a. And the release process is given to the base material 41 of the side which contact | connects the adhesive layer 42 in dot shape (release processing part; 411). This is different from the conventional double-sided adhesive tape.

When light is irradiated to such a laminated body, gas will generate | occur | produce from the gas generating agent contained in the adhesive layer 42. The generated gas is about to come out of the pressure-sensitive adhesive layer 42, and the gas is released to the adhesive interface between the substrate and the support plate as in the conventional case, and at least a part of the adhesive interface between the substrate and the support plate is peeled off by the pressure of the released gas. The support plate is peeled off. On the other hand, the release processing part 411 is formed between the base material 41 and the adhesive layer 42, and this part is inferior to the adhesive force compared with the circumference | surroundings. Therefore, the gas generated from the pressure-sensitive adhesive layer 42 is also released to the mold release treatment part 411. As a result, the air pool 5 is formed in the site | part corresponding to the mold release process part 411 at the interface between the base material 41 and the adhesive layer 42, and the adhesive layer 42 is formed by presence of this air pool 5. It changes to this wavy shape (FIG. 2 (b)). Even if the supporting plate once peeled is brought into close contact with the pressure-sensitive adhesive layer by its own weight, it cannot be sufficiently intimately adhered to such a wavy pressure-sensitive adhesive layer, and thus can be easily peeled off without re-adherence (Fig. 2 (c)). .

The double-sided adhesive tape of this invention consists of a base material and the adhesive layer formed on both surfaces of this base material.

Although the said base material is not specifically limited, It is preferable to transmit or pass light, For example, transparent resins, such as an acryl, an olefin, a polycarbonate, vinyl chloride, ABS, polyethylene terephthalate (PET), nylon, a urethane, a polyimide, etc. The sheet which consists of a sheet | seat, a sheet which has a net structure, the sheet | seat perforated, etc. are mentioned.

The said base material may be given the process for improving adhesiveness with adhesive layers, such as a corona treatment.

The release process of a dot shape is given to the surface of the side which contact | connects the adhesive layer of the side which adhere | attaches with the support plate of the said base material.

In the present specification, the release treatment includes both treatments for forming a region having low adhesion or adhesion with respect to the surroundings.

In addition, a dot shape means that the dot (dot) of a mold release process part is distributed regularly or randomly in the substantially whole surface of a base material.

Although FIG. 3 (a) and FIG. 3 (b) showed the schematic diagram which shows the example of a dot release process, this invention is not limited only to these examples.

The shape of a dot (dot) is not specifically limited, For example, any shape, such as a circular shape, a triangular shape, a square shape, and a star shape, may be sufficient.

The minimum of the diameter of a dot (dot) is 0.5 mm, and an upper limit is 3.0 mm. If the diameter of a dot is less than 0.5 mm, even if it gives a magnetic pole, the adhesive layer will not be wavy, and re-adhesion cannot be prevented. When the diameter of a dot exceeds 3.0 mm, the air pool formed is large, the shape which the adhesive layer waved was smooth, and it cannot fully prevent re-adhesion, and an adhesive layer adheres to the wafer side, It occurs.

In the double-sided pressure-sensitive adhesive tape of the present invention, the effect that the double-sided pressure-sensitive adhesive tape and the support plate can be peeled off easily and reliably by stimulating the diameter of the dot (dot) subjected to the release treatment is x (dot) per 1 cm 2. When the number of times is y, it is only displayed when x and y are within a certain range.

For example, when the diameter of a dot (dot) is 0.5 mm, the minimum of the number of dots (dots) per 1 cm <2> is one and an upper limit is 12 pieces. If the number of dots (dots) per cm 2 is less than one, the shape of the pressure-sensitive adhesive layer is not waved even if it is stimulated, and re-adherence cannot be prevented. When the number of dots (dots) per 1 cm <2> exceeds 12, an adhesive layer may adhere to the wafer side.

In the case where the diameter of the dot is 1.0 mm, the lower limit of the number of dots (dots) per 1 cm 2 is one and the upper limit is six.

In the case where the diameter of the dot (dot) is 1.5 mm, the lower limit of the number of dots (dots) per 1 cm 2 is one and the upper limit is four.

In the case where the diameter of the dot (dot) is 2.0 mm, the lower limit of the number of dots (dots) per 1 cm 2 is one and the upper limit is three.

In the case where the diameter of the dot (dot) is 2.5 mm, the lower limit of the number of dots (dots) per 1 cm 2 is one and the upper limit is two.

In the case where the diameter of the dot (dot) is 3.0 mm, the lower limit of the number of dots (dots) per 1 cm 2 is one and the upper limit is one.

4, the relationship between the diameter x of the dot which performed the mold release process, and the number y of dots per 1 cm <2> is shown. In FIG. 4, the point where the double-sided adhesive tape and a support plate can be peeled easily and reliably by giving a stimulus is "(circle)", and it is not able to recombine and peel off, or the point which causes adhesive residue on a wafer is "x". Plot as From these, it turns out that a double sided adhesive tape and a support plate can be peeled easily and surely by giving a stimulus only when x and y are in the range enclosed by the broken line A, the broken line B, and the broken line C of FIG.

x

3.0, y

1 이고, 또한 하기 식을 만족시키는 범위 내이다.Within the range surrounded by the broken line A, the broken line B and the broken line C, 0.5

x

3.0, y

It is 1 and it exists in the range which satisfy | fills the following formula.

18 - 12x (0.5

x

1.0)y

18-12x (0.5

x

1.0)

10 - 4x (1.0

x

1.5)y

10-4x (1.0

x

1.5)

7 - 2x (1.5

x

3.0)y

7-2x (1.5

x

3.0)

Although the method of performing the said mold release process of the said dot shape is not specifically limited, The method of processing a mold release agent by printing methods, such as gravure printing, is simple and preferable.

The mold releasing agent is not particularly limited, and for example, a silicone releasing agent, a long chain alkyl group, or a fluorine releasing agent can be used.

Examples of the long chain alkyl releasing agent include fatigue day 1050, fatigue day 406 and the like manufactured by Ibosha Oil and Fat Industry.

The said silicone type mold release agent is KM722T, KF412SP by Shin-Etsu Chemical Co., Ltd., etc. are mentioned, for example.

Examples of the fluorine-based releasing agent include EGC-1720 manufactured by 3M Corporation and die-free manufactured by Nisshin Chemical Co., Ltd.

Moreover, in addition to the method of using a mold release agent, the method of performing corona treatment after masking in a dot shape, etc. when performing adhesive improvement processes, such as a corona treatment, etc. are mentioned.

The adhesive layer (henceforth a "support plate side adhesive layer") of the side which adhere | attaches a support plate among the said adhesive layers contains a gas generator which generate | occur | produces a gas by stimulation.

The adhesive which comprises the said support plate side adhesive layer can use a conventionally well-known thing.

The said gas generating agent is not specifically limited, For example, an azo compound, an azide compound, etc. are mentioned.

The adhesive which comprises the said support plate side adhesive layer especially requires high heat resistance, when using it for the purpose of bonding a support plate and protecting this, when provided in the process containing high temperature processes, such as sputtering. The support plate side pressure-sensitive adhesive layer having such excellent heat resistance is, for example, a (meth) acrylic resin having no reactive double bond having an acid value of 25 mgKOH / g or less and a hydroxyl value of 25 mgKOH / g or less, and 150 in TG-DTA measurement. It is preferable that the weight reduction at the time of holding at 1 degreeC contains 5% or less of an azide compound, and the gel fraction is 75 to 100%.

Below, the support plate side adhesive layer excellent in such heat resistance is demonstrated in detail.

It is preferable that the acid value of (meth) acrylic-type resin used for the said support plate side adhesive layer is 25 mgKOH / g or less. When the acid value exceeds 25 mgKOH / g, the adhesive force of the pressure-sensitive adhesive layer is enhanced by heating, so that even if gas is generated, the adhesive force may not be sufficiently reduced.

In addition, in this specification, an acid value is a value which can be measured by the method based on JISK6751, and means the weight of KOH required in order to neutralize the acid contained in 1 g of said (meth) acrylic-type resins. .

It is preferable that the hydroxyl value of the (meth) acrylic-type resin used for the said support plate side adhesive layer is 25 mgKOH / g or less. When hydroxyl value exceeds 25 mgKOH / g, since the adhesive force of an adhesive layer improves by heating, adhesive force may not fully be reduced even if gas is generated.

In addition, in this specification, a hydroxyl value is a value which can be measured by the method based on JISK0070, and means the weight of KOH corresponding to the amount of hydroxyl groups contained in 1 g of said (meth) acrylic-type resins.

It is preferable that (meth) acrylic-type resin used for the said support plate side adhesive layer does not have a functional group which has a reactive double bond in a side chain. By using such a (meth) acrylic-type resin, gas can be generated at a desired time, without impairing the gas generating performance of an azide compound.

It is preferable that (meth) acrylic-type resin used for the said support plate side adhesive layer does not have polymerizable reactors, such as a double bond. When a polymerizable reactor is provided, the polymerizable reactor and the azide compound react to consume the azide compound, which may make it difficult to generate gas at a desired time.

The (meth) acrylic resin to be used for the support plate side pressure-sensitive adhesive layer is not particularly limited as long as it has the predetermined acid value and hydroxyl value, and is, for example, a polymer having adhesiveness at room temperature. Similarly, as a main monomer, the acrylic acid alkyl ester and / or methacrylic acid alkyl ester which the carbon number of an alkyl group normally has in the range of 2-18, the functional group containing monomer, and the other which can copolymerize with these as needed The functional group containing (meth) acrylic-type polymer etc. which are obtained by copolymerizing a monomer for modification by a conventional method are mentioned. Especially, the functional group containing (meth) acrylic-type polymer whose carbon number of an alkyl group is six or more is preferable. The weight average molecular weight of the said functional group containing (meth) acrylic-type polymer is about 200,000-2 million normally.

It is preferable that the said azide compound is 5% or less in weight loss amount when hold | maintaining at 150 degreeC for 1 hour by TG-DTA (thermogravimetric-differential thermal analysis) measurement. When it exceeds 5%, since an azide compound is consumed at the time of heating, and a gas is generated, it may become difficult to generate gas at a desired time.

In addition, in this specification, the weight reduction amount at the time of hold | maintaining at 150 degreeC for 1 hour by TG-DTA measurement is 5% or less, The azide compound single body is heated from 35 degreeC to 150 degreeC at the temperature increase rate of 10 degreeC / min, It means that the amount of weight reduction from the time of reaching 150 degreeC to the time of 1 hour pass is 5% or less.

The said azide compound will not be specifically limited if it has the said weight loss amount, For example, 3-azidemethyl-3-methyloxetane, a terephthalazide, p-tert- butylbenzazide, and 3-azidemethyl The polymer etc. which have an azide group, such as glycidyl azide polymer (GAP) obtained by ring-opening-polymerizing 3-methyloxetane, are mentioned. These azide compounds generate | occur | produce nitrogen gas mainly by irradiating the light of the ultraviolet region of wavelength 400nm or less.

It is preferable that the said azide compound is melt | dissolved in the said support plate side adhesive layer. When the azide compound is dissolved in the pressure-sensitive adhesive layer, the gas generated from the azide compound is efficiently released out of the pressure-sensitive adhesive layer when the stimulus is applied. When the azide compound is present as a particle in the pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer is foamed so that the gas is not emitted out of the pressure-sensitive adhesive layer, and when light is irradiated as a stimulus for generating gas, light is scattered at the interface of the particles to generate gas. Efficiency may fall or surface smoothness of an adhesive layer may worsen.

The fact that the azide compound is dissolved in the pressure-sensitive adhesive layer can be confirmed that the particles of the azide compound are inconspicuous when the pressure-sensitive adhesive layer is observed by an electron microscope.

In order to melt | dissolve the said azide compound in a support plate side adhesive layer, what is necessary is just to select the azide compound melt | dissolved in the adhesive which comprises the said support plate side adhesive layer. In addition, when selecting the azide compound which does not melt | dissolve in an adhesive, it is preferable to disperse | distribute an azide compound as much as possible in an adhesive layer, for example by using a disperser or using a dispersing agent together. In order to disperse | distribute an azide compound in an adhesive layer, it is preferable that a gas generating agent is microparticles, and these microparticles | fine-particles are made into finer microparticles | fine-particles as needed using a dispersing machine, a kneading apparatus, etc., for example. It is preferable. That is, when observing the said adhesive layer with an electron microscope, it is more preferable to disperse | distribute to the state in which a gas generating agent cannot be confirmed.

Although content of the said azide compound is not specifically limited, A preferable minimum with respect to 100 weight part of said (meth) acrylic-type resins is 1 weight part, and a preferable upper limit is 200 weight part. If it is less than 1 weight part, sufficient peeling pressure may not be obtained and it may not be peeled, and when it exceeds 200 weight part, it may adversely affect adhesive property. The minimum with more preferable is 3 weight part, and a more preferable upper limit is 100 weight part.

In addition to the above components, various polyfunctional compounds to be incorporated into general pressure-sensitive adhesives such as isocyanate compounds, melamine compounds and epoxy compounds may be suitably blended in the supporting plate-side pressure-sensitive adhesive layer as described above. . Moreover, well-known additives, such as an antistatic agent, a plasticizer, resin, surfactant, a wax, a particulate filler, can also be added.

Moreover, in order to improve stability of resin, you may mix | blend a heat stabilizer and antioxidant. Examples of such additives include phenolic antioxidants, amine antioxidants, sulfur antioxidants, phosphorus antioxidants, organic tin stabilizers, and lead stabilizers. These additives may be used independently and 2 or more types may be used together.

You may mix | blend a photosensitizer with the said support plate side adhesive layer for the purpose of further amplifying the stimulus by the light to an azide compound. By mix | blending such a photosensitizer, gas can be discharge | released by irradiation of less light. In addition, since the gas can be emitted by light in a wider wavelength range by blending a photosensitizer, even if the adherend does not transmit light having a wavelength that generates a gas from an azide compound such as polyamide, Gas can be generated by irradiating light with the furnace, thereby increasing the choice of the adherend.

Although the said photosensitizer is not specifically limited, For example, a thioxanthone sensitizer etc. are preferable.

The minimum with preferable gel fraction of the said support plate side adhesive layer is 75%. If it is less than 75%, the adhesive layer itself may foam | foam at the time of gas generation, and it may become difficult to discharge | generate the generated gas to an adhesive interface with high efficiency.

In addition, in this specification, a gel fraction means content of a gel fraction, For example, after immersing (meth) acrylic-type resin in tetrahydrofuran, the weight of the thing dried and (meth) acrylic-type resin before immersion It can obtain | require by measuring the weight ratio of.

Since the said support plate side adhesive layer has the said gel fraction, it has moderate hardness with the adhesive force required for using as an adhesive tape. Moreover, the (meth) acrylic-type resin which the said support plate side pressure sensitive adhesive layer has can contain the acid value and hydroxyl value, and can suppress the improvement of the adhesive force by heating. Therefore, since the adhesive force does not increase more than necessary even after heating, and since it has moderate hardness, the said support plate side adhesive layer does not foam an adhesive layer at the time of gas generation, and can generate | occur | produce the generated gas to an adhesive interface with high efficiency. Will be.

The adhesive layer (henceforth a "wafer side adhesive layer") of the adhesive layer of the double-sided adhesive tape of this invention to adhere | attach with a wafer is not specifically limited, A conventionally well-known thing can be used. Especially, when using the adhesive hardened | cured by a stimulus, before giving a stimulus, it is flexible and excellent in the followability of the unevenness | corrugation of the circuit formed in the surface of a wafer, and hardens | cures by giving a stimulus, such as light, and reduces adhesive force, and a support plate After this peeling, it is preferable because it can be peeled off easily from the wafer.

The adhesive hardened | cured by the magnetic pole used for the said wafer side adhesive layer is a photocurable adhesive agent etc., for example.

A conventionally well-known thing can be used for the said photocurable adhesive. Specifically, for example, a (meth) acrylic acid alkyl ester polymerizable polymer having a radical polymerizable unsaturated bond in a molecule, a radical polymerizable polyfunctional oligomer or a monomer as a main component, and containing a photopolymerization initiator as necessary The thing using the photocurable adhesive which consists of these etc. is mentioned.

The double-sided adhesive tape of this invention is used in order to reinforce a semiconductor wafer by adhering a semiconductor wafer and a support plate at the time of manufacture of an IC chip. At the time of peeling, a gas is generate | occur | produced from the gas generating agent contained in a support plate side adhesive layer by giving a magnetic pole, and it peels between a double-sided adhesive tape and a support plate by the pressure of the gas. At this time, an air pool is generated between the base material of the double-sided adhesive tape and the support plate side pressure-sensitive adhesive layer, and the whole support plate side pressure-sensitive adhesive layer is deformed into a wavy shape, whereby re-adherence of the support plate can be reliably prevented. As described above, since the first flexible double-sided adhesive tape can be peeled off after peeling between the double-sided adhesive tape and the support plate first, the wafer is hardly damaged.

The tape for semiconductor processing of 2nd this invention is demonstrated in detail.

When sticking an adhesive tape on the surface of a semiconductor, it is usual to perform an adhesion process under reduced pressure so that a bubble etc. may not be mixed. However, it is very difficult not to completely incorporate bubbles. In particular, when irregularities such as a circuit are formed on the non-adhering surface, it is inevitable that bubbles remain in the vicinity of the irregularities. Such bubbles are not a problem in normal processes. However, under the reduced pressure heating process, bubbles expand and the pressure to peel off rises. On the other hand, in general, the pressure-sensitive adhesive tends to decrease the elastic modulus and tan δ as the temperature increases. When the adhesive tape using the conventional photocurable adhesive is used at the time of processing a semiconductor having a reduced pressure heating process, the cause of peeling is that the elastic modulus and tanδ are high due to the high temperature with respect to the peeling pressure generated by the expansion of bubbles by reduced pressure heating. In the reduced adhesive layer, it was thought that the peeling pressure could not be relaxed.

MEANS TO SOLVE THE PROBLEM As a result of earnestly examining, microdispersion of silica microparticles | fine-particles in an adhesive layer is satisfy | filled so that fixed conditions may be satisfied, and the fall of the elasticity modulus and tan-delta of an adhesive layer in high temperature area | region is suppressed, and the process of the semiconductor which has a pressure reduction heating process is carried out. Even when used at the time, it discovered that the generation | occurrence | production of peeling can be suppressed effectively, and came to complete this invention.

In the conventional accident, since the elasticity modulus (E 'or G') raises (hardens) the adhesive layer which mix | blended silica, it was thought that adhesive force falls rather. Surprisingly, however, the pressure-sensitive adhesive layer blended with silica fine particles so as to have a particle diameter (dispersion diameter) of not more than a certain amount is significantly improved in peeling strength at high temperature, and is not easily peeled off even when a peeling pressure generated by expansion of bubbles is applied. Do not. Although it is not clear about this reason, it is thought that the fluid component maintains adhesive force, while the island-like structure which is similar crosslinking maintains the structure at high temperature.

The tape for semiconductor processing of this invention has an adhesive layer in at least one surface of a base material. The tape for semiconductor processing of this invention may be a single-sided adhesive tape in which the adhesive layer was formed only in one surface, or the double-sided adhesive tape in which the adhesive layer was formed in both surfaces may be sufficient.

Although it does not specifically limit as said base material, It is preferable to transmit or pass light, For example, transparent, such as acrylic, an olefin, polycarbonate, vinyl chloride, ABS, polyethylene terephthalate (PET), nylon, urethane, polyimide, etc. The sheet | seat which consists of resin, the sheet | seat which has a mesh-like structure, the sheet | seat perforated, etc. are mentioned.

The pressure-sensitive adhesive layer contains a photocurable pressure-sensitive adhesive and silica fine particles.

It does not specifically limit as said photocurable adhesive, A conventionally well-known thing can be used. Specifically, for example, a (meth) acrylic acid alkyl ester polymerizable polymer having a radical polymerizable unsaturated bond in a molecule, a radical polymerizable polyfunctional oligomer or a monomer as a main component, and containing a photopolymerization initiator as necessary The thing using the photocurable adhesive which consists of these etc. is mentioned.

In the pressure-sensitive adhesive layer made of such a photocurable pressure-sensitive adhesive, the entirety of the pressure-sensitive adhesive layer is uniformly and quickly polymerized and integrated by irradiation with light, so that an increase in elastic modulus due to polymerization curing is remarkable, and the adhesive force is greatly reduced.

The polymerizable polymer is, for example, previously synthesized a (meth) acrylic polymer (hereinafter referred to as a functional group-containing (meth) acrylic polymer) having a functional group in a molecule, and a functional group and radical polymerizable polymer that react with the functional group in the molecule. It can obtain by making it react with the compound which has an unsaturated bond (henceforth a functional group containing unsaturated compound).

The functional group-containing (meth) acrylic polymer is a polymer having adhesiveness at room temperature, and the acrylic acid alkyl ester and / or methacryl in which the carbon number of the alkyl group is usually in the range of 2 to 18 as in the case of a general (meth) acrylic polymer. It is obtained by making an acid alkyl ester into a main monomer, copolymerizing this, a functional group containing monomer, and the other reforming monomer copolymerizable with these as needed by a conventional method. The weight average molecular weight of the said functional group containing (meth) acrylic-type polymer is about 200,000-2 million normally.

As said functional group containing monomer, For example, carboxyl group-containing monomers, such as acrylic acid and methacrylic acid, and hydroxyl-group containing monomers, such as hydroxyethyl acrylate and hydroxyethyl methacrylate, glycidyl acrylate and methacrylic acid Epoxy group containing monomers, such as glycidyl, Isocyanate group containing monomers, such as isocyanate ethyl acrylate and isocyanate ethyl methacrylate, and amino group containing monomers, such as amino ethyl acrylate and amino ethyl methacrylate, are mentioned.

As said other copolymerizable modification monomer, the various monomers used for general (meth) acrylic-type polymers, such as vinyl acetate, an acrylonitrile, styrene, are mentioned, for example.

As the functional group-containing unsaturated compound which reacts with the functional group-containing (meth) acryl-based polymer, the same functional group-containing monomer as the above-mentioned functional group-containing monomer may be used depending on the functional group of the functional group-containing (meth) For example, when the functional group of the said functional group containing (meth) acrylic-type polymer is a carboxyl group, an epoxy group containing monomer or an isocyanate group containing monomer is used, and when the functional group is a hydroxyl group, an isocyanate group containing monomer is used and the functional group is an epoxy group In the case of amide, an amide group-containing monomer such as a carboxyl group-containing monomer or acrylamide is used. When the functional group is an amino group, an epoxy group-containing monomer is used.

As said polyfunctional oligomer or monomer, it is preferable that molecular weight is 10,000 or less, More preferably, the molecular weight is 5,000 or less so that the three-dimensional network of the adhesive layer by heating or light irradiation becomes efficient. And the number of radically polymerizable unsaturated bonds in a molecule is 2-20. As such a more preferable polyfunctional oligomer or monomer, trimethylol propane triacrylate, tetramethylol methane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydride, for example. Roxy pentaacrylate, dipentaerythritol hexaacrylate, the same methacrylate, etc. are mentioned. In addition, 1, 4- butylene glycol diacrylate, 1, 6- hexanediol diacrylate, polyethyleneglycol diacrylate, commercially available oligoester acrylate, the same methacrylates, etc. are mentioned. These polyfunctional oligomers or monomers may be used independently and 2 or more types may be used together.

-하이드록시시클로헥실페닐케톤, 2-하이드록시메틸페닐프로판 등의 광 라디칼 중합 개시제를 들 수 있다. 이들의 광중합 개시제는, 단독으로 사용되어도 되고, 2 종 이상이 병용되어도 된다.As said photoinitiator, what is activated by irradiating light of 250-800 nm wavelength is mentioned, for example, As such a photoinitiator, For example, acetophenone derivative compounds, such as methoxy acetophenone, and benzoin Benzoin ether compounds such as propyl ether and benzoin isobutyl ether, ketal derivative compounds such as benzyldimethyl ketal and acetophenonediethyl ketal, phosphine oxide derivative compounds, and bis (η5-cyclopentadienyl) titano Sen derivative compounds, benzophenone, Michler's ketone, chloro thioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thioxanthone,

Photo radical polymerization initiators, such as -hydroxycyclohexyl phenyl ketone and 2-hydroxymethyl phenyl propane, are mentioned. These photoinitiators may be used independently and 2 or more types may be used together.

It does not specifically limit as said silica microparticles, Fumed silica, fused silica, colloidal silica, etc. are mentioned. Among them, fumed silica fine particles and fused silica fine particles are preferable, and fumed silica is more preferable, since it is easy to adjust the amount of hydroxyl groups on the surface, control of the amount of water is easy, and a sufficiently small primary particle size is obtained.

The silica fine particles are dispersed in the pressure-sensitive adhesive layer so that the average particle diameter (hereinafter also referred to as "average dispersion diameter") is 1.0 µm or less, and the maximum particle diameter (hereinafter also referred to as "maximum dispersion diameter") is 5.0 µm or less. It is. By microdispersion under such conditions, the excellent effects of the present invention can be exhibited.

It does not specifically limit about the preferable minimum of the said average dispersion diameter, Although small is so good that it is small, about 0.05 micrometer is a limit by the present technique.

The upper limit with preferable maximum dispersion diameter is 2.0 micrometers. The preferred lower limit of the maximum dispersion diameter is not particularly limited, but the present technology will be limited to about 0.5 μm.

In addition, in this specification, the said average dispersion diameter and the maximum dispersion diameter are the value measured by the nano track (UPA-UT) using a dynamic light scattering method.

At least four of the following are important for finely dispersing the silica fine particles as described above.

Firstly, silica fine particles having a small primary particle diameter are used as raw materials as much as possible. The upper limit with preferable primary particle diameter of a raw material silica fine particle is 50 nm. When the primary particle diameter of silica fine particles exceeds 50 nm, it is difficult to achieve the above-mentioned microdispersion state. The upper limit with more preferable primary particle diameter of a silica fine particle is 30 nm. The smaller the lower limit of the primary particle diameter of the silica fine particles, the smaller it is preferable. However, in the present technology, about 5 nm is the limit.

Second, surface treatment is performed so that the silica fine particles are easily dispersed. As said surface treatment, chemical treatment, such as a methoxy group treatment, an ethoxy group treatment, a phenyl group treatment, glycidyl group treatment, etc., etc. are mentioned, for example.

Although the hydroxyl groups on the surface of the silica fine particles are consumed by performing the surface treatment, not all hydroxyl groups are consumed, and therefore, the effects of the present invention are not affected.

Third, as a dispersing method, a dispersing apparatus that can be highly dispersed is used. As a highly dispersible dispersing apparatus, a high speed stirring dispersing apparatus, for example, a homodisper, a homomixer, an ultra tarax, a chaplo, a homogenizer, etc. are mentioned. When using a homodisper as a dispersing apparatus, it is preferable to make rotation speed of a blade into at least 2000 rpm.

Fourth, the pressure-sensitive adhesive solution after dispersion is filtered. By filtration with a filter of 500 mesh, it is possible to almost eliminate particle lumps larger than 5.0 µm.

As a compounding quantity of the said silica fine particle, the minimum with respect to 100 weight part of said photocurable adhesives is 7 weight part, and an upper limit is 20 weight part. When the blending amount of the silica fine particles is less than 7 parts by weight, the effect of preventing peeling under reduced pressure heating is not obtained. When the amount of the silica fine particles is more than 20 parts by weight, the adhesion under room temperature is insufficient, or the silica particles cannot be uniformly kneaded in the pressure-sensitive adhesive. do. The minimum with a preferable compounding quantity of the said silica fine particle is 10 weight part, and a preferable upper limit is 17 weight part.

The said adhesive layer may contain the gas generator which generate | occur | produces a gas by irradiating light. When the pressure-sensitive adhesive layer containing such a gas generator is irradiated with light, the photocurable pressure-sensitive adhesive crosslinks and the elastic modulus of the entire pressure-sensitive adhesive layer is increased, and the gas generated in such a hard pressure-sensitive adhesive layer is released from the pressure-sensitive adhesive layer to the adhesive interface. In order to peel at least one part of an adhesive surface, an adhesive tape can be peeled more easily.

Although it does not specifically limit as said gas generating agent, For example, an azide compound, an azo compound, etc. are mentioned. Especially, when the tape for semiconductor processing of this invention is used at the time of processing of the semiconductor which has a pressure reduction heating process, the azide compound excellent in heat resistance is preferable.

It does not specifically limit as said azide compound, For example, 3-azidemethyl-3-methyloxetane, terephthal azide, p-tert- butylbenzazide, 3-azidemethyl-3-methyloxetane The polymer which has an azide group, such as glycidyl azide polymer (GAP) obtained by ring-opening-polymerizing, etc. are mentioned.

The said adhesive layer may mix | blend suitably the various polyfunctional compound mix | blended with general adhesives, such as an isocyanate compound, a melamine compound, and an epoxy compound, in order to adjust the cohesion force as an adhesive. Moreover, well-known additives, such as an antistatic agent, a plasticizer, resin, surfactant, a wax, a particulate filler, can also be added. And in order to improve the stability of an adhesive, you may mix | blend a heat stabilizer and antioxidant.

It does not specifically limit as a method of manufacturing the tape for a semiconductor process of this invention, For example, a conventionally well-known method, such as coating the said adhesive etc. using a doctor knife, a spin coater, etc. on a base material can be used.

The tape for semiconductor processing of this invention can be preferably used, in order to stick to a semiconductor and to protect it at the time of the process of the semiconductor which has a pressure reduction heating process. In the tape for semiconductor processing of this invention, it has a high adhesive force with respect to a semiconductor at room temperature, and even if it heats under reduced pressure, it does not peel without irradiating an ultraviolet-ray etc .. Therefore, it can use suitably also at the time of processing of the semiconductor which has a process heated under reduced pressure, such as chemical vapor deposition, physical vapor deposition, sputtering, dry etching, plating.

According to the present invention, a double-sided pressure-sensitive adhesive tape for semiconductor processing used to bond a semiconductor wafer and a support plate to reinforce a semiconductor wafer during the manufacture of an IC chip, which is easily and reliably applied to a double-sided pressure-sensitive adhesive tape for semiconductor processing and a support plate by applying a magnetic pole. It can provide a double-sided adhesive tape for semiconductor processing that can be peeled off. Moreover, according to this invention, the tape for a semiconductor process for affixing on a semiconductor and protecting this at the time of the process of the semiconductor which has a pressure reduction heating process can be provided.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described in more detail by way of examples, but the present invention is not limited to these examples.

(Experimental Example 1)

(1) Preparation of base material

After one side of the transparent polyethylene terephthalate (PET) film having a thickness of 50 µm subjected to corona treatment on both sides, the entire surface was easily adhered to it, and then, as in the shape of dots shown in black in FIG. The alkyl release agent pyroyl 1050 was printed. This obtained the base material in which the circular dot of 0.5 mm in diameter to which the mold release agent was processed was uniformly formed by the density of 0.5, 1, 2, 3, 4, 5, 6, 7, 8, and 9 pieces / cm <2> in one whole surface. .

(2) Preparation of pressure-sensitive adhesive for support plate side pressure-sensitive adhesive layer

The following compound was dissolved in ethyl acetate, superposed | polymerized by irradiating an ultraviolet-ray, and the acrylic copolymer of the weight average molecular weight 600,000 was obtained.

97.5 parts by weight of 2-ethylhexyl acrylate

2-hydroxyethyl acrylate 1.5 parts by weight

1.0 part by weight of acrylic acid

0.2 weight part of photoinitiator

Furthermore, 10 weight part of benzophenone 0.5 weight part, polyisocyanate 2 weight part, and glycidyl azide polymer (GAP5003, Nippon Oils & Fats Co., Ltd. make) with respect to 100 weight part of resin solid content of the ethyl acetate solution containing the acrylic copolymer after reaction. 5 parts by weight of 2,4-diethyl thioxanthone were mixed to prepare an ethyl acetate solution of the pressure sensitive adhesive for supporting plate side pressure sensitive adhesive layer containing an azide compound.

In addition, the acid value of the used acrylic resin was 10 mgKOH / g, and the hydroxyl value was 10 mgKOH / g. In addition, the used azide compound was heated from 35 degreeC to 150 degreeC by the temperature increase rate of 10 degree-C / min by TG-DTA measurement, and the weight loss amount when hold | maintained at 150 degreeC for 1 hour was 2%. And the gel fraction of the obtained adhesive for support plate side adhesive layers was 85%.

(3) Preparation of pressure-sensitive adhesive for wafer-side pressure-sensitive adhesive layer

The following compound was dissolved in ethyl acetate, superposed | polymerized by irradiating an ultraviolet-ray, and the ethyl acetate solution of the photocurable adhesive which consists of an acrylic copolymer with a weight average molecular weight of 700,000 was obtained.

83 parts by weight of 2 ethylhexyl acrylate

10 parts by weight of butyl acrylate

2 parts by weight of acrylic acid

2-hydroxyethyl acrylate 5 parts by weight

0.2 weight part of photoinitiator

(Irgacure 651, 50% ethyl acetate solution)

0.01 part by weight of lauryl mercaptan

To 100 parts by weight of the resin solid content of the ethyl acetate solution of the obtained photocurable pressure-sensitive adhesive, 3.5 parts by weight of 2-isocyanatoethyl methacrylate was added and reacted, and again to 100 parts by weight of the resin solid content of the ethyl acetate solution after the reaction, 5 weight part of photoinitiators (irgacure 651) and 1.0 weight part of polyisocyanates were mixed, and the ethyl acetate solution of the adhesive agent 1 for wafer side adhesive layers was prepared.

In addition, the shear modulus at 23 degrees C of the obtained adhesive for wafer side adhesive layers was 1 * 10 <^5> Pa, tan-delta was 0.41.

(4) Production of double-sided adhesive tape

The ethyl acetate solution of the adhesive for the support plate side pressure-sensitive adhesive layer was coated with a doctor knife so that the thickness of the dry film was about 30 μm on the surface on which the release agent treatment of the obtained substrate was applied, and heated at 110 ° C. for 5 minutes to volatilize the solvent. And the coating solution was dried. The adhesive layer after drying showed adhesiveness in the dry state. The PET film to which the mold release process was given to the surface of the support plate side adhesive layer after drying was laminated.

Next, the ethyl acetate solution of the adhesive for wafer side pressure-sensitive adhesive layer was coated on the PET film subjected to the release treatment on the surface with a doctor knife so as to have a thickness of about 40 μm, and heated at 110 ° C. for 5 minutes to volatilize the solvent. The coating solution was dried. The wafer side adhesive layer after drying showed adhesiveness in the dry state.

Next, the surface which corona-treated without the support plate side adhesive layer of the base material on which the support plate side adhesive layer was formed, and the surface of the wafer side adhesive layer of the PET film in which the mold release process in which the wafer side adhesive layer was formed were bonded were bonded. Then, it left still for 40 days and cured for 3 days. For this reason, the adhesive layer was formed in both surfaces, and the surface obtained the double-sided adhesive tape protected by the PET film in which the mold release process was performed.

(Experimental Examples 2 to 8)

The double-sided adhesive tape was obtained by the method similar to Example 1 except having carried out the mold release agent process performed to one surface of a base material as the diameter and density of the dot shown in Table 1 and Table 2.

(Comparative Example 1)

The double-sided adhesive tape was obtained by the same method as Experimental example 1 except having used the base material which did not perform the mold release agent process.

(Comparative Example 2)

The double-sided adhesive tape was obtained by the same method as Experimental example 1 except having used the base material which performed the mold release agent process on one whole surface of the base material.

(evaluation)

About the double-sided adhesive tape obtained by Experimental Examples 1-8 and Comparative Examples 1 and 2, evaluation was performed by the following method.

The results are shown in Table 1 and Table 2.

(Evaluation of exfoliation)

The PET film which protects the wafer side adhesive layer of a double-sided adhesive tape is peeled off, it adheres to the silicon wafer in which the circuit was formed as diameter of 20 cm and thickness about 750 micrometers, and the PET film which protects a support plate side adhesive layer was peeled off, and the diameter A 20.4 cm glass plate was affixed to the pressure-sensitive adhesive layer using a vacuum press to prepare a sample.

After installing the sample so that the silicon wafer side might be downward, the intensity | strength was irradiated by adjusting the intensity | strength of the ultraviolet-ray of wavelength 365nm to the glass plate surface to 40 mW / cm <2> using ultrahigh pressure mercury etc. from the glass plate side.

Peeling success rate at the time of carrying out 10 experiments each, when the support plate was peeled off and lifted up only when the support plate was slowly lifted upward after 60 seconds of irradiation (within 10 seconds) and after ultraviolet irradiation. (%) Was calculated | required.

In addition, the surface of the wafer after peeling a support plate 60 second after ultraviolet irradiation was visually observed, and the presence or absence of adhesive residue was evaluated. "(Circle)" and the case where adhesive residue was observed were evaluated as "x" when the adhesive residue is not observed on the surface of a wafer.

And as a comprehensive evaluation, when the peeling success rate immediately after irradiating an ultraviolet-ray is 80% or more, the peeling success rate after 60 second of ultraviolet irradiation is 80% or more, and an adhesive residue satisfies all of "○", "either" Even if it did not satisfy even, it evaluated by "x".

Experimental Example 9

The double-sided adhesive tape was obtained by the same method as Experimental example 1 except having used the silicone mold release agent KM722T as a mold release agent used for preparation of a base material, and setting it as the diameter and density of the dot shown in Table 3.

About the obtained adhesive tape, evaluation of mold release property was performed by the same method as the above.

The results are shown in Table 3.

Experimental Example 10

The double-sided adhesive tape was obtained by the same method as Experimental example 1 except having used the fluorine-type mold release agent EGC-1720 as a mold release agent used for preparation of a base material, and setting it as the diameter and density of the dot shown in Table 4.

About the obtained adhesive tape, evaluation of mold release property was performed by the same method as the above.

The results are shown in Table 4.

Experimental Example 11

The corona treatment was performed to one surface of the transparent polyethylene terephthalate (PET) film of 50 micrometers in thickness in the state which masked the part corresponding to a dot so that it might become the diameter and density of the dot shown in Table 5. Except having used the obtained base material, the double-sided adhesive tape was obtained by the same method as Experimental example 1.

About the obtained adhesive tape, evaluation of mold release property was performed by the same method as the above.

The results are shown in Table 5.

(Example 1)

(1) Preparation of photocurable adhesive

The following compound was melt | dissolved in ethyl acetate, and it irradiated with ultraviolet-ray, superposed | polymerized, and obtained the ethyl acetate solution of the photocurable adhesive which consists of an acrylic copolymer with a weight average molecular weight of 700,000.

Butyl acrylate 79 parts by weight

15 parts by weight of ethyl acrylate

1 part by weight of acrylic acid

5 parts by weight of 2-hydroxyethyl acrylate

0.2 part by weight of photopolymerization initiator

(Irgacure 651, 50% ethyl acetate solution)

0.01 part by weight of lauryl mercaptan

(2) Preparation of composition solution for pressure-sensitive adhesive layer

To 100 parts by weight of the resin solid content of the ethyl acetate solution of the obtained photocurable pressure-sensitive adhesive, 3.5 parts by weight of 2-isocyanatoethyl methacrylate was added and reacted, and again to 100 parts by weight of the resin solid content of the ethyl acetate solution after the reaction, 7 parts by weight of fumed silica (manufactured by Tokuyama, MT-10, having a primary particle diameter of 15 nm) subjected to the methoxy group treatment, 5 parts by weight of a photopolymerization initiator (irgacure 651), and 0.5 parts by weight of polyisocyanate, It stirred for 10 minutes by the rotation speed 2000rpm using Homodisper (PRIMIX make, TK Homodispur). Then, it filtered using the 500 mesh nylon filter, and obtained the composition solution for adhesive layers.

(3) Manufacture of Tapes for Semiconductor Processing

The obtained solution for the pressure-sensitive adhesive layer was coated with a doctor knife on a corona treatment of a 75 μm thick polyethylene terephthalate (PET) film subjected to corona treatment on one side with a doctor knife so that the thickness of the dry film was about 15 μm. The coating solution was dried by heating for a minute. The adhesive layer after drying showed adhesiveness in the dry state. Next, the PET film to which the mold release process was given was affixed on the surface of an adhesive layer. Thereafter, stationary curing was performed at 40 ° C. for 3 days to obtain a tape for semiconductor processing.

(Example 2)

Except having made the compounding quantity of fumed silica into 10 weight part, it carried out similarly to Example 1, and prepared the composition solution for adhesive layers, and obtained the tape for a semiconductor process.

(Example 3)

A composition solution for pressure-sensitive adhesive layers was prepared in the same manner as in Example 1 except that the compounded amount of fumed silica was 20 parts by weight and the rotation speed of the homodisper was 4000 rpm, to thereby obtain a tape for semiconductor processing.

(Example 4)

As the fumed silica, 10 parts by weight of Quartron PL-7 (primary particle size: 50 nm) manufactured by Fuso Chemical Industries, Ltd. was blended, and the pressure-sensitive adhesive layer was used in the same manner as in Example 1 except that the rotation speed of the homodisper was 4000 rpm. The composition solution was prepared and the tape for a semiconductor process was obtained.

(Comparative Example 3)

Except having used spherical silica (SO-E1, Admatechs make, 200 nm (large thing)), it carried out similarly to Example 2, and prepared the composition solution for adhesive layers, and obtained the tape for a semiconductor process.

(Comparative Example 4)

Except having used fumed silica (QS-10 by Tokuyama Corporation, 15 nm of primary particle diameters) which were not surface-treated, it carried out similarly to Example 2, and tried to prepare the composition solution for adhesive layers. However, since the fumed silica could not be sufficiently dispersed, the sample could not be prepared without filtration.

(Comparative Example 5)

Except having used the normal low speed rotary stirrer (BL600, Haydon, rpm1000 or less) as a dispersing apparatus, it carried out similarly to Example 2, and prepared the composition solution for adhesive layers, and obtained the tape for a semiconductor process.

(Comparative Example 6)

Except not performing filtration, it carried out similarly to Example 2, and prepared the composition solution for adhesive layers, and obtained the tape for a semiconductor process.

(Comparative Example 7)

Except having made the compounding quantity of fumed silica into 5 weight part, it carried out similarly to Example 1, and prepared the composition solution for adhesive layers, and obtained the tape for a semiconductor process.

(Comparative Example 8)

Except having made the compounding quantity of fumed silica into 30 weight part, it carried out similarly to Example 3, and tried to prepare the composition solution for adhesive layers. However, since the fumed silica could not be sufficiently dispersed, the sample could not be prepared without filtration.

(evaluation)

About the tape for semiconductor processing obtained in Examples 1-4 and Comparative Examples 3-8, it evaluated by the following method.

The results are shown in Table 6 and Table 7.

(1) Evaluation of dispersion state of silica fine particles

By the dynamic light scattering method (UPA-UT), the average dispersion diameter and maximum dispersion diameter of the fumed silica in an adhesive layer were calculated | required.

(2) Evaluation of peel strength

After laminating the adhesive tape of width 2.5cm to the silicon wafer, the peeling strength in 25 degreeC, 80 degreeC, and 120 degreeC was calculated | required by the tensile tester provided with the hot plate which can be heated at a fixed temperature.

(Evaluation of pressure-resistant heating)

The obtained tape for semiconductor processing was used as a tape for back surface grinding, and it affixed on the silicon wafer of 200 micrometers in thickness with a circuit in normal pressure reduction. Next, it left still in a pressure reduction bonding machine and heat-processed under reduced pressure for 20 minutes on condition of 100 Pa and 130 degreeC.

The test was performed 10 pieces about each tape for semiconductor processing, and the number which peeling did not generate | occur | produce during processing was calculated | required.

According to the present invention, a double-sided pressure-sensitive adhesive tape for semiconductor processing used to bond a semiconductor wafer and a support plate to reinforce a semiconductor wafer during the manufacture of an IC chip, which is easily and reliably applied to a double-sided pressure-sensitive adhesive tape for semiconductor processing and a support plate by applying a magnetic pole. It can provide a double-sided adhesive tape for semiconductor processing that can be peeled off. According to this invention, the tape for a semiconductor process for affixing on a semiconductor and protecting this at the time of the process of the semiconductor which has a pressure reduction heating process can be provided.

Brief Description of Drawings

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram explaining the peeling situation when the support plate and the semiconductor wafer which were bonded using the conventional double-sided adhesive tape were given the magnetic pole.

It is a schematic diagram explaining the peeling situation when the support plate and the semiconductor wafer which were adhere | attached using the double-sided adhesive tape of this invention were given the magnetic pole.

3 is a schematic diagram illustrating an example of a dot-shaped release process.

It is a figure which shows the relationship between the diameter x of the dot which performed the mold release process, and the number y of dots per 1 cm <2>.

Explanation of symbols

1 semiconductor wafer

2 support plate

3 double sided adhesive tape

31 description

32 Pressure-sensitive adhesive layer on side of supporting plate

33 Pressure-sensitive adhesive layer on the side to be bonded to the wafer

4 double sided adhesive tape

41 description

411 Release Processing Unit

42 Adhesive layer on side of supporting plate

43 Pressure-sensitive adhesive layer on the side to be bonded to the wafer

5 air pool

Claims (4)

A double-sided adhesive tape for semiconductor processing used to reinforce a semiconductor wafer by bonding a semiconductor wafer and a support plate during the manufacture of an IC chip,
It consists of a base material and the adhesive layer formed on both surfaces of the said base material,
The adhesive layer of the side which adhere | attaches the said support plate contains the gas generating agent which generate | occur | produces a gas by magnetic pole, and the dot-shaped mold release process is given to the said base material of the side which contact | connects the adhesive layer of the side which adhere | attaches with the support plate. It is,
When the diameter of the dot which performed the mold release process was set to x and the number of dots per 1 cm <2> is 0.5,

x

3.0, y

It is 1 and exists in the range which satisfy | fills following formula (1)-(3), The double-sided adhesive tape for semiconductor processing characterized by the above-mentioned.
y

18-12x (0.5

x

1.0)… Equation (1)
y

10-4x (1.0

x

1.5)… Equation (2)
y

7-2x (1.5

x

3.0)… Equation (3) As a tape for semiconductor processing which affixes to a semiconductor at the time of processing of the semiconductor which has a pressure reduction heating process, and protects this,
It has an adhesive layer containing the silica microparticle which surface-treated 7-20 weight part with respect to 100 weight part of photocurable adhesives on at least one surface of a base material,
The surface-treated silica fine particles are dispersed in the pressure-sensitive adhesive layer so that the average particle diameter is 0.9 µm or less and the maximum particle diameter is 5.0 µm or less. 3. The method of claim 2,
Said silica microparticles | fine-particles are fumed silica microparticles | fine-particles, The tape for a semiconductor process characterized by the above-mentioned. The method according to claim 2 or 3,
The pressure-sensitive adhesive layer contains a gas generating agent.

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