KR101378259B1 - 콜로이드성 실리카를 사용하는 산화규소 연마 방법 - Google Patents

콜로이드성 실리카를 사용하는 산화규소 연마 방법 Download PDF

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Publication number
KR101378259B1
KR101378259B1 KR1020087031580A KR20087031580A KR101378259B1 KR 101378259 B1 KR101378259 B1 KR 101378259B1 KR 1020087031580 A KR1020087031580 A KR 1020087031580A KR 20087031580 A KR20087031580 A KR 20087031580A KR 101378259 B1 KR101378259 B1 KR 101378259B1
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South Korea
Prior art keywords
liquid carrier
substrate
polishing
polishing composition
silicon oxide
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Expired - Fee Related
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KR1020087031580A
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English (en)
Korean (ko)
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KR20090024195A (ko
Inventor
벤자민 바이엘
잔 첸
제프리 챔버린
로버트 바카씨
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
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Publication of KR20090024195A publication Critical patent/KR20090024195A/ko
Application granted granted Critical
Publication of KR101378259B1 publication Critical patent/KR101378259B1/ko
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020087031580A 2006-06-29 2008-12-26 콜로이드성 실리카를 사용하는 산화규소 연마 방법 Expired - Fee Related KR101378259B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/478,004 2006-06-29
US11/478,004 US20080220610A1 (en) 2006-06-29 2006-06-29 Silicon oxide polishing method utilizing colloidal silica
PCT/US2007/013943 WO2008005164A1 (en) 2006-06-29 2007-06-14 Silicon oxide polishing method utilizing colloidal silica

Publications (2)

Publication Number Publication Date
KR20090024195A KR20090024195A (ko) 2009-03-06
KR101378259B1 true KR101378259B1 (ko) 2014-03-25

Family

ID=38894886

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087031580A Expired - Fee Related KR101378259B1 (ko) 2006-06-29 2008-12-26 콜로이드성 실리카를 사용하는 산화규소 연마 방법

Country Status (10)

Country Link
US (1) US20080220610A1 (OSRAM)
EP (1) EP2038916A4 (OSRAM)
JP (1) JP5596344B2 (OSRAM)
KR (1) KR101378259B1 (OSRAM)
CN (1) CN101479836A (OSRAM)
IL (1) IL195699A (OSRAM)
MY (1) MY151925A (OSRAM)
SG (1) SG172740A1 (OSRAM)
TW (1) TWI375264B (OSRAM)
WO (1) WO2008005164A1 (OSRAM)

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FR2929756B1 (fr) * 2008-04-08 2010-08-27 Commissariat Energie Atomique Procede de formation de materiau poreux dans une microcavite ou un micropassage par polissage mecano-chimique
EP2289667B1 (en) 2008-06-11 2019-06-26 Shin-Etsu Chemical Co., Ltd. Polishing agent for synthetic quartz glass substrate
JP5407188B2 (ja) * 2008-06-11 2014-02-05 信越化学工業株式会社 合成石英ガラス基板用研磨剤
KR101279971B1 (ko) * 2008-12-31 2013-07-05 제일모직주식회사 구리 배리어층 연마용 ｃｍｐ 슬러리 조성물, 이를 이용한 연마 방법, 및 그 연마방법에 의해 제조된 반도체 소자
US20100164106A1 (en) * 2008-12-31 2010-07-01 Cheil Industries Inc. CMP Slurry Composition for Barrier Polishing for Manufacturing Copper Interconnects, Polishing Method Using the Composition, and Semiconductor Device Manufactured by the Method
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8247328B2 (en) * 2009-05-04 2012-08-21 Cabot Microelectronics Corporation Polishing silicon carbide
US8232208B2 (en) 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8568610B2 (en) 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
US8513126B2 (en) 2010-09-22 2013-08-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Slurry composition having tunable dielectric polishing selectivity and method of polishing a substrate
CN102800580B (zh) * 2011-05-25 2015-07-08 中芯国际集成电路制造(上海)有限公司 抛光方法以及栅极的形成方法
SG11201610533WA (en) * 2014-06-25 2017-01-27 Cabot Microelectronics Corp Colloidal silica chemical-mechanical polishing composition
ES2756948B2 (es) * 2020-02-04 2022-12-19 Drylyte Sl Electrolito solido para el electropulido en seco de metales con moderador de actividad

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Also Published As

Publication number Publication date
KR20090024195A (ko) 2009-03-06
TW200807533A (en) 2008-02-01
IL195699A0 (en) 2009-09-01
MY151925A (en) 2014-07-31
US20080220610A1 (en) 2008-09-11
WO2008005164A1 (en) 2008-01-10
CN101479836A (zh) 2009-07-08
SG172740A1 (en) 2011-07-28
JP5596344B2 (ja) 2014-09-24
JP2009543337A (ja) 2009-12-03
IL195699A (en) 2014-08-31
TWI375264B (en) 2012-10-21
EP2038916A4 (en) 2011-04-13
EP2038916A1 (en) 2009-03-25

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