KR101370224B1 - 측정 장치, 노광 장치 및 디바이스 제조 방법 - Google Patents

측정 장치, 노광 장치 및 디바이스 제조 방법 Download PDF

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Publication number
KR101370224B1
KR101370224B1 KR1020100121413A KR20100121413A KR101370224B1 KR 101370224 B1 KR101370224 B1 KR 101370224B1 KR 1020100121413 A KR1020100121413 A KR 1020100121413A KR 20100121413 A KR20100121413 A KR 20100121413A KR 101370224 B1 KR101370224 B1 KR 101370224B1
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KR
South Korea
Prior art keywords
optical system
light beams
periodic pattern
pattern
image
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Expired - Fee Related
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KR1020100121413A
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English (en)
Korean (ko)
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KR20110065351A (ko
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요시유끼 구라모또
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties
    • G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
    • G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
    • G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020100121413A 2009-12-09 2010-12-01 측정 장치, 노광 장치 및 디바이스 제조 방법 Expired - Fee Related KR101370224B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-279812 2009-12-09
JP2009279812A JP5538851B2 (ja) 2009-12-09 2009-12-09 測定装置、露光装置及びデバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20110065351A KR20110065351A (ko) 2011-06-15
KR101370224B1 true KR101370224B1 (ko) 2014-03-05

Family

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KR1020100121413A Expired - Fee Related KR101370224B1 (ko) 2009-12-09 2010-12-01 측정 장치, 노광 장치 및 디바이스 제조 방법

Country Status (3)

Country Link
US (1) US8692975B2 (enExample)
JP (1) JP5538851B2 (enExample)
KR (1) KR101370224B1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010062763A1 (de) * 2010-12-09 2012-06-14 Carl Zeiss Smt Gmbh Verfahren zum Vermessen eines optischen Systems
DE102011078224A1 (de) * 2011-06-28 2013-01-03 Carl Zeiss Smt Gmbh Verfahren zum Vermessen eines optischen Systems
KR102148198B1 (ko) * 2012-05-30 2020-08-26 가부시키가이샤 니콘 파면 계측 방법 및 장치, 및 노광 방법 및 장치
CN103278179B (zh) * 2013-05-16 2015-08-19 中国科学院长春光学精密机械与物理研究所 空间相机场曲检测装置及检测方法
JP6359378B2 (ja) * 2014-08-08 2018-07-18 株式会社Ｓｃｒｅｅｎホールディングス 光学特性取得装置、位置測定装置、光学特性取得方法および位置測定方法
US10401145B2 (en) * 2016-06-13 2019-09-03 Carl Zeiss Industrielle Messtechnik Gmbh Method for calibrating an optical arrangement
US11506478B2 (en) * 2019-11-27 2022-11-22 California Institute Of Technology Three dimensional (3D) imaging using optical coherence factor (OCF)
US12566061B2 (en) * 2021-12-03 2026-03-03 The Texas A&M University System Systems and methods for inspecting photomasks

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090027175A (ko) * 2007-09-11 2009-03-16 캐논 가부시끼가이샤 측정 장치, 노광 장치 및 디바이스 제조 방법
KR20090094768A (ko) * 2008-03-03 2009-09-08 캐논 가부시끼가이샤 평가 방법, 평가 장치 및 노광 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3297423B2 (ja) * 2000-08-09 2002-07-02 株式会社東芝 フォーカステストマスク、並びにそれを用いたフォーカス及び収差の測定方法
US6816247B1 (en) * 2001-08-14 2004-11-09 Carl Zeiss Smt Ag Moiré method and a system for measuring the distortion of an optical imaging system
JP2003197510A (ja) * 2001-12-27 2003-07-11 Nikon Corp 収差測定装置、収差測定方法、光学系、および、露光装置
JP2006324311A (ja) * 2005-05-17 2006-11-30 Canon Inc 波面収差測定装置及びそれを有する露光装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090027175A (ko) * 2007-09-11 2009-03-16 캐논 가부시끼가이샤 측정 장치, 노광 장치 및 디바이스 제조 방법
KR20090094768A (ko) * 2008-03-03 2009-09-08 캐논 가부시끼가이샤 평가 방법, 평가 장치 및 노광 장치

Also Published As

Publication number Publication date
JP5538851B2 (ja) 2014-07-02
US8692975B2 (en) 2014-04-08
KR20110065351A (ko) 2011-06-15
US20110134408A1 (en) 2011-06-09
JP2011124345A (ja) 2011-06-23

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