KR101364407B1 - 포토 마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 - Google Patents

포토 마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 Download PDF

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KR101364407B1
KR101364407B1 KR1020130049498A KR20130049498A KR101364407B1 KR 101364407 B1 KR101364407 B1 KR 101364407B1 KR 1020130049498 A KR1020130049498 A KR 1020130049498A KR 20130049498 A KR20130049498 A KR 20130049498A KR 101364407 B1 KR101364407 B1 KR 101364407B1
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South Korea
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light
pattern
film
transmissive
semi
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KR1020130049498A
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English (en)
Korean (ko)
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KR20130123332A (ko
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유따까 요시까와
고이찌로 요시다
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020130049498A 2012-05-02 2013-05-02 포토 마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 KR101364407B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-105532 2012-05-02
JP2012105532A JP6139826B2 (ja) 2012-05-02 2012-05-02 フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法

Publications (2)

Publication Number Publication Date
KR20130123332A KR20130123332A (ko) 2013-11-12
KR101364407B1 true KR101364407B1 (ko) 2014-02-17

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KR1020130049498A KR101364407B1 (ko) 2012-05-02 2013-05-02 포토 마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법

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JP (1) JP6139826B2 (zh)
KR (1) KR101364407B1 (zh)
CN (1) CN103383523B (zh)
TW (1) TWI491975B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015102608A (ja) * 2013-11-22 2015-06-04 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
JP2015106001A (ja) * 2013-11-29 2015-06-08 Hoya株式会社 フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP2015212720A (ja) * 2014-05-01 2015-11-26 Hoya株式会社 多階調フォトマスクの製造方法、多階調フォトマスク及び表示装置の製造方法
JP6581759B2 (ja) * 2014-07-17 2019-09-25 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
CN104267580A (zh) * 2014-09-05 2015-01-07 京东方科技集团股份有限公司 掩模板、阵列基板及其制备方法、显示装置
JP6335735B2 (ja) * 2014-09-29 2018-05-30 Hoya株式会社 フォトマスク及び表示装置の製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
JP6716427B2 (ja) * 2016-11-07 2020-07-01 Hoya株式会社 フォトマスク、近接露光用フォトマスクの製造方法、及び、表示装置の製造方法
JP2017076146A (ja) * 2016-12-26 2017-04-20 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法
TWI712851B (zh) * 2018-10-22 2020-12-11 日商Ｈｏｙａ股份有限公司 光罩、光罩之製造方法及電子元件之製造方法
KR102367141B1 (ko) * 2019-02-27 2022-02-23 호야 가부시키가이샤 포토마스크, 포토마스크의 제조 방법, 및 표시 장치의 제조 방법
KR20210016814A (ko) * 2019-08-05 2021-02-17 주식회사 포트로닉스 천안 3-톤 이상의 마스크 제조 방법
JP7383490B2 (ja) * 2020-01-07 2023-11-20 株式会社エスケーエレクトロニクス フォトマスク

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JPH06301192A (ja) * 1993-04-12 1994-10-28 Hitachi Ltd ホトマスク
JP2007072451A (ja) * 2005-08-12 2007-03-22 Semiconductor Energy Lab Co Ltd 露光マスク
KR20070075735A (ko) * 2006-01-16 2007-07-24 주식회사 에스앤에스텍 위상 반전형 그레이톤 블랭크 마스크 및 위상반전형포토마스크와 그 제조 방법

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JPH08272071A (ja) * 1995-03-30 1996-10-18 Toppan Printing Co Ltd 位相シフトマスクとその製造方法、ならびにマスクブランク
JPH09325468A (ja) * 1996-06-06 1997-12-16 Sony Corp ハーフトーン型位相シフトマスク及びその製造方法
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JP3993125B2 (ja) * 2003-04-01 2007-10-17 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法
JP4009219B2 (ja) * 2003-04-10 2007-11-14 松下電器産業株式会社 フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法
JP5064116B2 (ja) * 2007-05-30 2012-10-31 Ｈｏｙａ株式会社 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法
TWI422961B (zh) * 2007-07-19 2014-01-11 Hoya Corp 光罩及其製造方法、圖案轉印方法、以及顯示裝置之製造方法
JP2009086382A (ja) * 2007-09-29 2009-04-23 Hoya Corp グレートーンマスクブランクとその製造方法、グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
JP5160286B2 (ja) * 2008-04-15 2013-03-13 Ｈｏｙａ株式会社 多階調フォトマスク、パターン転写方法、及び薄膜トランジスタの製造方法
JP5410839B2 (ja) * 2009-05-22 2014-02-05 Ｈｏｙａ株式会社 多階調フォトマスクの製造方法、多階調フォトマスク、及びパターン転写方法
TWI461833B (zh) * 2010-03-15 2014-11-21 Hoya Corp 多調式光罩、多調式光罩之製造方法及圖案轉印方法
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JPH06301192A (ja) * 1993-04-12 1994-10-28 Hitachi Ltd ホトマスク
JP2007072451A (ja) * 2005-08-12 2007-03-22 Semiconductor Energy Lab Co Ltd 露光マスク
KR20070075735A (ko) * 2006-01-16 2007-07-24 주식회사 에스앤에스텍 위상 반전형 그레이톤 블랭크 마스크 및 위상반전형포토마스크와 그 제조 방법

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Publication number Publication date
CN103383523A (zh) 2013-11-06
CN103383523B (zh) 2016-09-21
TWI491975B (zh) 2015-07-11
KR20130123332A (ko) 2013-11-12
JP2013235037A (ja) 2013-11-21
TW201351029A (zh) 2013-12-16
JP6139826B2 (ja) 2017-05-31

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