KR101324644B1 - 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 - Google Patents

화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 Download PDF

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KR101324644B1
KR101324644B1 KR1020087006475A KR20087006475A KR101324644B1 KR 101324644 B1 KR101324644 B1 KR 101324644B1 KR 1020087006475 A KR1020087006475 A KR 1020087006475A KR 20087006475 A KR20087006475 A KR 20087006475A KR 101324644 B1 KR101324644 B1 KR 101324644B1
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delete delete
spectrum
spectra
polishing
current
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KR20080042895A (ko
Inventor
도미닉 제이. 벤베그누
제프리 드류 데이비드
보그단 스웨덱
헤리 큐. 리
라크쉬마난 카루프피아
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어플라이드 머티어리얼스, 인코포레이티드
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Priority claimed from US11/213,344 external-priority patent/US7764377B2/en
Priority claimed from US11/261,742 external-priority patent/US7406394B2/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
KR1020087006475A 2005-08-22 2006-08-21 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 Active KR101324644B1 (ko)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
US71068205P 2005-08-22 2005-08-22
US60/710,682 2005-08-22
US11/213,674 2005-08-26
US11/213,675 2005-08-26
US11/213,344 2005-08-26
US11/213,344 US7764377B2 (en) 2005-08-22 2005-08-26 Spectrum based endpointing for chemical mechanical polishing
US11/213,675 US7306507B2 (en) 2005-08-22 2005-08-26 Polishing pad assembly with glass or crystalline window
US11/213,674 US7226339B2 (en) 2005-08-22 2005-08-26 Spectrum based endpointing for chemical mechanical polishing
US11/261,742 2005-10-28
US11/261,742 US7406394B2 (en) 2005-08-22 2005-10-28 Spectra based endpointing for chemical mechanical polishing
US74776806P 2006-05-19 2006-05-19
US60/747,768 2006-05-19
PCT/US2006/032659 WO2007024807A2 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing

Related Child Applications (3)

Application Number Title Priority Date Filing Date
KR1020137008961A Division KR101423579B1 (ko) 2005-08-22 2006-08-21 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법
KR1020137008968A Division KR101398570B1 (ko) 2005-08-22 2006-08-21 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법
KR1020137008965A Division KR101398567B1 (ko) 2005-08-22 2006-08-21 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법

Publications (2)

Publication Number Publication Date
KR20080042895A KR20080042895A (ko) 2008-05-15
KR101324644B1 true KR101324644B1 (ko) 2013-11-01

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Country Status (4)

Country Link
JP (1) JP5534672B2 (enrdf_load_stackoverflow)
KR (1) KR101324644B1 (enrdf_load_stackoverflow)
TW (1) TWI366872B (enrdf_load_stackoverflow)
WO (1) WO2007024807A2 (enrdf_load_stackoverflow)

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JP5728239B2 (ja) 2010-03-02 2015-06-03 株式会社荏原製作所 研磨監視方法、研磨方法、研磨監視装置、および研磨装置
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US8834229B2 (en) 2010-05-05 2014-09-16 Applied Materials, Inc. Dynamically tracking spectrum features for endpoint detection
US20110281510A1 (en) * 2010-05-12 2011-11-17 Applied Materials, Inc. Pad Window Insert
US8190285B2 (en) * 2010-05-17 2012-05-29 Applied Materials, Inc. Feedback for polishing rate correction in chemical mechanical polishing
JP2012019114A (ja) * 2010-07-08 2012-01-26 Tokyo Seimitsu Co Ltd 研磨終点検出装置、及び研磨終点検出方法
TWI478259B (zh) * 2010-07-23 2015-03-21 Applied Materials Inc 用於終點偵測之二維光譜特徵追蹤
JP5612945B2 (ja) 2010-07-23 2014-10-22 株式会社荏原製作所 基板の研磨の進捗を監視する方法および研磨装置
US8954186B2 (en) 2010-07-30 2015-02-10 Applied Materials, Inc. Selecting reference libraries for monitoring of multiple zones on a substrate
CN103222034B (zh) * 2010-11-18 2016-03-09 嘉柏微电子材料股份公司 包含透射区域的抛光垫
JP5980476B2 (ja) 2010-12-27 2016-08-31 株式会社荏原製作所 ポリッシング装置およびポリッシング方法
US8547538B2 (en) * 2011-04-21 2013-10-01 Applied Materials, Inc. Construction of reference spectra with variations in environmental effects
WO2012148716A2 (en) * 2011-04-28 2012-11-01 Applied Materials, Inc. Varying coefficients and functions for polishing control
JP5715034B2 (ja) * 2011-11-30 2015-05-07 株式会社東京精密 研磨装置による研磨方法
US9289875B2 (en) * 2012-04-25 2016-03-22 Applied Materials, Inc. Feed forward and feed-back techniques for in-situ process control
US9221147B2 (en) * 2012-10-23 2015-12-29 Applied Materials, Inc. Endpointing with selective spectral monitoring
US9242337B2 (en) * 2013-03-15 2016-01-26 Applied Materials, Inc. Dynamic residue clearing control with in-situ profile control (ISPC)
US10012494B2 (en) * 2013-10-25 2018-07-03 Applied Materials, Inc. Grouping spectral data from polishing substrates
JP7197999B2 (ja) 2018-05-11 2022-12-28 キオクシア株式会社 研磨装置および研磨パッド
KR102586252B1 (ko) * 2018-07-06 2023-10-11 주식회사 케이씨텍 기판의 실리콘 산화막 두께 검출 장치 및 방법
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JP7469032B2 (ja) * 2019-12-10 2024-04-16 株式会社荏原製作所 研磨方法および研磨装置
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Also Published As

Publication number Publication date
WO2007024807A3 (en) 2007-07-12
TW201103085A (en) 2011-01-16
TWI366872B (en) 2012-06-21
JP2009505847A (ja) 2009-02-12
WO2007024807A2 (en) 2007-03-01
WO2007024807A9 (en) 2009-09-03
KR20080042895A (ko) 2008-05-15
JP5534672B2 (ja) 2014-07-02

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