WO2007024807A3 - Apparatus and methods for spectrum based monitoring of chemical mechanical polishing - Google Patents

Apparatus and methods for spectrum based monitoring of chemical mechanical polishing

Info

Publication number
WO2007024807A3
WO2007024807A3 PCT/US2006/032659 US2006032659W WO2007024807A3 WO 2007024807 A3 WO2007024807 A3 WO 2007024807A3 US 2006032659 W US2006032659 W US 2006032659W WO 2007024807 A3 WO2007024807 A3 WO 2007024807A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
spectrum
based
polishing
endpoint
head
Prior art date
Application number
PCT/US2006/032659
Other languages
French (fr)
Other versions
WO2007024807A2 (en )
WO2007024807A9 (en )
Inventor
Dominic J Benvegnu
Jeffrey Drue David
Lakshmanan Karuppiah
Harry Q Lee
Bogdan Swedek
Original Assignee
Applied Materials Inc
Dominic J Benvegnu
Jeffrey Drue David
Lakshmanan Karuppiah
Harry Q Lee
Bogdan Swedek
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means

Abstract

Apparatus and methods for spectrum based monitoring of chemical mechanical polishing, including spectrum based endpointing, spectrum based polishing rate adjustment, flushing a top surface of an optical head (53), or a pad (30) with a window. The spectrum-based endpointing uses a reference spectrum which is empirically selected for particular spectrum based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectrum based endpoint logic. The polishing endpoint can be determined using a difference trace or a sequence of index values. The flushing system creates a laminar gas flow across the top surface of the optical head (53). The vacuum nozzle (308) and vacuum sources (312) are configured so that the flow of gas is laminar. The window includes a soft plastic portion and a crystalline or glass like portion. The spectrum based polishing rate adjustment includes obtaining spectra for different zones on a substrate.
PCT/US2006/032659 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing WO2007024807A9 (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
US71068205 true 2005-08-22 2005-08-22
US60/710,682 2005-08-22
US11213344 US7764377B2 (en) 2005-08-22 2005-08-26 Spectrum based endpointing for chemical mechanical polishing
US11/213,344 2005-08-26
US11/213,675 2005-08-26
US11/213,674 2005-08-26
US11213675 US7306507B2 (en) 2005-08-22 2005-08-26 Polishing pad assembly with glass or crystalline window
US11213674 US7226339B2 (en) 2005-08-22 2005-08-26 Spectrum based endpointing for chemical mechanical polishing
US11/261,742 2005-10-28
US11261742 US7406394B2 (en) 2005-08-22 2005-10-28 Spectra based endpointing for chemical mechanical polishing
US74776806 true 2006-05-19 2006-05-19
US60/747,768 2006-05-19

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR20087006475A KR101324644B1 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
KR20137008965A KR101398567B1 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
KR20137008968A KR101398570B1 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
KR20137008961A KR101423579B1 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
KR20147029677A KR101593927B1 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
KR20147002129A KR101521414B1 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
JP2008528048A JP5534672B2 (en) 2005-08-22 2006-08-21 Apparatus and method for monitoring based on the spectrum of the chemical mechanical polishing
CN 200680030404 CN101242931B (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing

Publications (3)

Publication Number Publication Date
WO2007024807A2 true WO2007024807A2 (en) 2007-03-01
WO2007024807A3 true true WO2007024807A3 (en) 2007-07-12
WO2007024807A9 true WO2007024807A9 (en) 2009-09-03

Family

ID=37560902

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/032659 WO2007024807A9 (en) 2005-08-22 2006-08-21 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing

Country Status (3)

Country Link
JP (1) JP5534672B2 (en)
KR (1) KR101324644B1 (en)
WO (1) WO2007024807A9 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7998358B2 (en) 2006-10-31 2011-08-16 Applied Materials, Inc. Peak-based endpointing for chemical mechanical polishing
KR101504508B1 (en) * 2007-02-23 2015-03-20 어플라이드 머티어리얼스, 인코포레이티드 Spectrum used for determining the polishing endpoint
US20090275265A1 (en) * 2008-05-02 2009-11-05 Applied Materials, Inc. Endpoint detection in chemical mechanical polishing using multiple spectra
US7967661B2 (en) 2008-06-19 2011-06-28 Micron Technology, Inc. Systems and pads for planarizing microelectronic workpieces and associated methods of use and manufacture
US8439723B2 (en) 2008-08-11 2013-05-14 Applied Materials, Inc. Chemical mechanical polisher with heater and method
US8414357B2 (en) 2008-08-22 2013-04-09 Applied Materials, Inc. Chemical mechanical polisher having movable slurry dispensers and method
WO2010062497A3 (en) * 2008-10-27 2010-08-05 Applied Materials, Inc. Goodness of fit in spectrographic monitoring of a substrate during processing
US8751033B2 (en) * 2008-11-14 2014-06-10 Applied Materials, Inc. Adaptive tracking spectrum features for endpoint detection
KR101715726B1 (en) * 2008-11-26 2017-03-13 어플라이드 머티어리얼스, 인코포레이티드 Using optical metrology for feed back and feed forward process control
WO2011056485A3 (en) * 2009-11-03 2011-10-20 Applied Materials, Inc. Endpoint method using peak location of spectra contour plots versus time
JP5728239B2 (en) 2010-03-02 2015-06-03 株式会社荏原製作所 Polishing monitoring method, polishing method, the polishing monitoring system, and polishing apparatus
KR101762837B1 (en) * 2010-04-28 2017-08-04 어플라이드 머티어리얼스, 인코포레이티드 Automatic generation of reference spectra for optical monitoring
US9579767B2 (en) 2010-04-28 2017-02-28 Applied Materials, Inc. Automatic generation of reference spectra for optical monitoring of substrates
KR20170102068A (en) * 2010-05-05 2017-09-06 어플라이드 머티어리얼스, 인코포레이티드 Dynamically or adaptively tracking spectrum features for endpoint detection
US8834229B2 (en) 2010-05-05 2014-09-16 Applied Materials, Inc. Dynamically tracking spectrum features for endpoint detection
US8190285B2 (en) * 2010-05-17 2012-05-29 Applied Materials, Inc. Feedback for polishing rate correction in chemical mechanical polishing
JP2012019114A (en) * 2010-07-08 2012-01-26 Tokyo Seimitsu Co Ltd Polishing end point detection system and polishing end point detection method
JP5612945B2 (en) 2010-07-23 2014-10-22 株式会社荏原製作所 Method and a polishing apparatus for monitoring the progress of polishing of the substrate
US8954186B2 (en) 2010-07-30 2015-02-10 Applied Materials, Inc. Selecting reference libraries for monitoring of multiple zones on a substrate
WO2012068428A3 (en) * 2010-11-18 2012-08-16 Cabot Microelectronics Corporation Polishing pad comprising transmissive region
JP5980476B2 (en) 2010-12-27 2016-08-31 株式会社荏原製作所 Polishing apparatus and polishing method
US8547538B2 (en) * 2011-04-21 2013-10-01 Applied Materials, Inc. Construction of reference spectra with variations in environmental effects
JP5715034B2 (en) * 2011-11-30 2015-05-07 株式会社東京精密 Polishing method by the polishing apparatus
US9221147B2 (en) * 2012-10-23 2015-12-29 Applied Materials, Inc. Endpointing with selective spectral monitoring

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000183001A (en) * 1998-12-10 2000-06-30 Okamoto Machine Tool Works Ltd Polish end-point detecting method for wafer and chemical-mechanical polishing device used for the same
WO2000054935A1 (en) * 1999-03-18 2000-09-21 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
JP2000310512A (en) * 1999-04-28 2000-11-07 Hitachi Ltd Method and device for measuring film thickness of thin film and method and device for manufacturing thin film device using the same
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
WO2001072470A1 (en) * 2000-03-29 2001-10-04 Nikon Corporation Process end point detection apparatus and method, polishing apparatus, semiconductor device manufacturing method, and recording medium recorded with signal processing program
JP2001287159A (en) * 2000-04-05 2001-10-16 Nikon Corp Surface condition measuring method and measuring device, polishing machine, and semiconductor device manufacturing method
EP1176631A1 (en) * 1999-12-27 2002-01-30 Nikon Corporation Method and apparatus for monitoring polishing state, polishing device, process wafer, semiconductor device, and method of manufacturing semiconductor device
US20020155789A1 (en) * 2001-04-20 2002-10-24 Bibby Thomas F.A. Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling
JP2002359217A (en) * 2001-05-31 2002-12-13 Omron Corp Method and device for detecting polishing end point
US20030022400A1 (en) * 2001-07-27 2003-01-30 Hitachi, Ltd. Method and apparatus for measuring thickness of thin film and device manufacturing method using same
US20030053042A1 (en) * 2001-08-28 2003-03-20 Charles Chen Method and apparatus for optical endpoint detection during chemical mechanical polishing
US20030153246A1 (en) * 2002-01-17 2003-08-14 Mukesh Desai In-situ endpoint detect for non-transparent polishing member
US20030184732A1 (en) * 2002-03-29 2003-10-02 Lam Research System and method of broad band optical end point detection for film change indication
WO2004035265A1 (en) * 2002-10-17 2004-04-29 Ebara Corporation Polishing state monitoring apparatus and polishing apparatus and method
JP2005159203A (en) * 2003-11-28 2005-06-16 Hitachi High-Technologies Corp Thickness measuring method and its instrument, polishing rate calculating method, and cpm processing method and its apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3832198B2 (en) * 2000-06-16 2006-10-11 日本電気株式会社 Polishing end point detecting method and apparatus for a semiconductor wafer
JP2004165473A (en) * 2002-11-14 2004-06-10 Seiko Epson Corp Cmp device, cmp method, semiconductor device and its manufacturing method
US20050026542A1 (en) 2003-07-31 2005-02-03 Tezer Battal Detection system for chemical-mechanical planarization tool

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010039064A1 (en) * 1998-05-21 2001-11-08 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
JP2000183001A (en) * 1998-12-10 2000-06-30 Okamoto Machine Tool Works Ltd Polish end-point detecting method for wafer and chemical-mechanical polishing device used for the same
WO2000054935A1 (en) * 1999-03-18 2000-09-21 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
JP2000310512A (en) * 1999-04-28 2000-11-07 Hitachi Ltd Method and device for measuring film thickness of thin film and method and device for manufacturing thin film device using the same
US20030205664A1 (en) * 1999-05-20 2003-11-06 Hiroyuki Abe Process end point detection apparatus and method, polishing apparatus, semiconductor device manufacturing method, and recording medium recorded with signal processing program
EP1176631A1 (en) * 1999-12-27 2002-01-30 Nikon Corporation Method and apparatus for monitoring polishing state, polishing device, process wafer, semiconductor device, and method of manufacturing semiconductor device
WO2001072470A1 (en) * 2000-03-29 2001-10-04 Nikon Corporation Process end point detection apparatus and method, polishing apparatus, semiconductor device manufacturing method, and recording medium recorded with signal processing program
JP2001287159A (en) * 2000-04-05 2001-10-16 Nikon Corp Surface condition measuring method and measuring device, polishing machine, and semiconductor device manufacturing method
US20020155789A1 (en) * 2001-04-20 2002-10-24 Bibby Thomas F.A. Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling
JP2002359217A (en) * 2001-05-31 2002-12-13 Omron Corp Method and device for detecting polishing end point
US20030022400A1 (en) * 2001-07-27 2003-01-30 Hitachi, Ltd. Method and apparatus for measuring thickness of thin film and device manufacturing method using same
US20030053042A1 (en) * 2001-08-28 2003-03-20 Charles Chen Method and apparatus for optical endpoint detection during chemical mechanical polishing
US20030153246A1 (en) * 2002-01-17 2003-08-14 Mukesh Desai In-situ endpoint detect for non-transparent polishing member
US20030184732A1 (en) * 2002-03-29 2003-10-02 Lam Research System and method of broad band optical end point detection for film change indication
WO2004035265A1 (en) * 2002-10-17 2004-04-29 Ebara Corporation Polishing state monitoring apparatus and polishing apparatus and method
JP2005159203A (en) * 2003-11-28 2005-06-16 Hitachi High-Technologies Corp Thickness measuring method and its instrument, polishing rate calculating method, and cpm processing method and its apparatus

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Week 200043, Derwent World Patents Index; AN 2000-486550, XP002413682 *
DATABASE WPI Week 200106, Derwent World Patents Index; AN 2001-046948, XP002414056 *
DATABASE WPI Week 200234, Derwent World Patents Index; AN 2002-296553, XP002413767 *
DATABASE WPI Week 200313, Derwent World Patents Index; AN 2003-133199, XP002413766 *
DATABASE WPI Week 200541, Derwent World Patents Index; AN 2005-400726, XP002413780 *

Also Published As

Publication number Publication date Type
KR101324644B1 (en) 2013-11-01 grant
WO2007024807A2 (en) 2007-03-01 application
KR20080042895A (en) 2008-05-15 application
JP5534672B2 (en) 2014-07-02 grant
WO2007024807A9 (en) 2009-09-03 application
JP2009505847A (en) 2009-02-12 application

Similar Documents

Publication Publication Date Title
US6024631A (en) Method and apparatus to hold integrated circuit chips onto a chuck and to simultaneously remove multiple integrated circuit chips from a cutting chuck
US6676491B2 (en) Semiconductor wafer dividing method
WO2002084739A1 (en) Thin film-device manufacturing method, and semiconductor device
US20100129939A1 (en) Using optical metrology for within wafer feed forward process control
Kolari et al. Deep plasma etching of glass for fluidic devices with different mask materials
US7201174B2 (en) Processing apparatus and cleaning method
WO2009072631A1 (en) Method for manufacturing nitride semiconductor element, and nitride semiconductor element
JPH01248335A (en) Substrate for optical recording medium and its production
US20010002871A1 (en) Method for reducing particles from an electrostatic chuck and an equipment for manufacturing a semiconductor
US20040197938A1 (en) Monitoring method of processing state and processing unit
CN1322374A (en) Polishing body, polisher, method for adjusting polisher, method for measuring thickness of polished film or end point of polishing, method for producing semiconductor device
US7060622B2 (en) Method of forming dummy wafer
WO2003069381A3 (en) Optical component comprising submicron hollow spaces
JPH02132843A (en) Cutting of wafer for semiconductor pressure sensor
US20060166465A1 (en) Method of dividing wafer
WO2008102672A1 (en) Polishing slurry, method for manufacturing the polishing slurry, nitride crystalline material and method for polishing surface of the nitride crystalline material
Cao et al. DRIE of fused silica
WO2009008419A1 (en) Reflectivity-reducing agent for substrate, and method for production of low-reflective substrate using the same
WO2008078637A1 (en) Pattern forming method and method for manufacturing semiconductor device
WO2009031608A1 (en) Reflector plate for optical encoder, method for producing the same, and optical encoder
US7841582B2 (en) Variable seal pressure slit valve doors for semiconductor manufacturing equipment
US20080014445A1 (en) Chamberless Plasma Deposition of Coatings
US20090152241A1 (en) Plasma etching apparatus and plasma etching method
DE102004048679A1 (en) Producing isolator thin film on substrate involves atom deposition of silicon atom layer on substrate, oxygen atom layer on silicon atom layer and atom deposition of metal-atom layer on substrate, oxygen atom layer on metal-atom layer
JP2008244099A (en) Semiconductor manufacturing device, manufacturing method of semiconductor wafer using same, and recording medium in which its program is recorded

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2008528048

Country of ref document: JP

ENP Entry into the national phase in:

Ref document number: 2008528048

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase in:

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06802034

Country of ref document: EP

Kind code of ref document: A2