KR101317625B1 - 비휘발성 메모리에서 향상된 프로그램-검증 작동을 위한방법 및 장치 - Google Patents

비휘발성 메모리에서 향상된 프로그램-검증 작동을 위한방법 및 장치 Download PDF

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Publication number
KR101317625B1
KR101317625B1 KR1020087015676A KR20087015676A KR101317625B1 KR 101317625 B1 KR101317625 B1 KR 101317625B1 KR 1020087015676 A KR1020087015676 A KR 1020087015676A KR 20087015676 A KR20087015676 A KR 20087015676A KR 101317625 B1 KR101317625 B1 KR 101317625B1
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South Korea
Prior art keywords
programming
memory
threshold voltage
group
cells
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KR1020087015676A
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English (en)
Korean (ko)
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KR20080096645A (ko
Inventor
시우 렁 찬
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샌디스크 테크놀로지스, 인코포레이티드
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Priority claimed from US11/323,577 external-priority patent/US7310255B2/en
Priority claimed from US11/323,596 external-priority patent/US7224614B1/en
Application filed by 샌디스크 테크놀로지스, 인코포레이티드 filed Critical 샌디스크 테크놀로지스, 인코포레이티드
Publication of KR20080096645A publication Critical patent/KR20080096645A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

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  • Read Only Memory (AREA)
KR1020087015676A 2005-12-29 2006-12-27 비휘발성 메모리에서 향상된 프로그램-검증 작동을 위한방법 및 장치 Expired - Fee Related KR101317625B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/323,596 2005-12-29
US11/323,577 2005-12-29
US11/323,577 US7310255B2 (en) 2005-12-29 2005-12-29 Non-volatile memory with improved program-verify operations
US11/323,596 US7224614B1 (en) 2005-12-29 2005-12-29 Methods for improved program-verify operations in non-volatile memories
PCT/US2006/062627 WO2007076512A2 (en) 2005-12-29 2006-12-27 Methods and device for improved program-verify operations in non-volatile memories

Publications (2)

Publication Number Publication Date
KR20080096645A KR20080096645A (ko) 2008-10-31
KR101317625B1 true KR101317625B1 (ko) 2013-10-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087015676A Expired - Fee Related KR101317625B1 (ko) 2005-12-29 2006-12-27 비휘발성 메모리에서 향상된 프로그램-검증 작동을 위한방법 및 장치

Country Status (5)

Country Link
EP (1) EP1966802A2 (https=)
JP (1) JP4638544B2 (https=)
KR (1) KR101317625B1 (https=)
TW (1) TWI328231B (https=)
WO (1) WO2007076512A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11594293B2 (en) 2020-07-10 2023-02-28 Samsung Electronics Co., Ltd. Memory device with conditional skip of verify operation during write and operating method thereof

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US7606076B2 (en) * 2007-04-05 2009-10-20 Sandisk Corporation Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
ITRM20080114A1 (it) * 2008-02-29 2009-09-01 Micron Technology Inc Compensazione della perdita di carica durante la programmazione di un dispositivo di memoria.
JP5172555B2 (ja) 2008-09-08 2013-03-27 株式会社東芝 半導体記憶装置
JP5193830B2 (ja) 2008-12-03 2013-05-08 株式会社東芝 不揮発性半導体メモリ
KR101005117B1 (ko) * 2009-01-23 2011-01-04 주식회사 하이닉스반도체 불휘발성 메모리 장치의 동작 방법
JP5039079B2 (ja) * 2009-03-23 2012-10-03 株式会社東芝 不揮発性半導体記憶装置
KR101554727B1 (ko) 2009-07-13 2015-09-23 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
US8223556B2 (en) 2009-11-25 2012-07-17 Sandisk Technologies Inc. Programming non-volatile memory with a reduced number of verify operations
KR101633018B1 (ko) * 2009-12-28 2016-06-24 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
KR101656384B1 (ko) * 2010-06-10 2016-09-12 삼성전자주식회사 불휘발성 메모리 장치의 데이터 기입 방법
JP2011258289A (ja) 2010-06-10 2011-12-22 Toshiba Corp メモリセルの閾値検出方法
JP5380506B2 (ja) * 2011-09-22 2014-01-08 株式会社東芝 不揮発性半導体記憶装置
JP2014053060A (ja) 2012-09-07 2014-03-20 Toshiba Corp 半導体記憶装置及びその制御方法
JP2014063551A (ja) 2012-09-21 2014-04-10 Toshiba Corp 半導体記憶装置
TWI514394B (zh) * 2013-08-27 2015-12-21 Toshiba Kk Semiconductor memory device and its control method
CN112652345B (zh) 2019-10-12 2022-10-28 长江存储科技有限责任公司 对存储器件进行编程的方法及相关存储器件
KR102813444B1 (ko) * 2020-07-10 2025-05-27 삼성전자주식회사 기록 동작 속도를 향상한 메모리 장치 및 그 동작방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050162923A1 (en) 2004-01-27 2005-07-28 Guterman Daniel C. Charge packet metering for coarse/fine programming of non-volatile memory
US20050162916A1 (en) 2004-01-27 2005-07-28 Guterman Daniel C. Efficient verification for coarse/fine programming of non-volatile memory
US20050248988A1 (en) 2004-05-05 2005-11-10 Guterman Daniel C Boosting to control programming of non-volatile memory

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
JP3679544B2 (ja) * 1997-03-28 2005-08-03 三洋電機株式会社 不揮発性半導体メモリ装置
JP3977799B2 (ja) * 2003-12-09 2007-09-19 株式会社東芝 不揮発性半導体記憶装置
US7136304B2 (en) * 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7170793B2 (en) * 2004-04-13 2007-01-30 Sandisk Corporation Programming inhibit for non-volatile memory
ITRM20050310A1 (it) * 2005-06-15 2006-12-16 Micron Technology Inc Convergenza a programmazione selettiva lenta in un dispositivo di memoria flash.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050162923A1 (en) 2004-01-27 2005-07-28 Guterman Daniel C. Charge packet metering for coarse/fine programming of non-volatile memory
US20050162916A1 (en) 2004-01-27 2005-07-28 Guterman Daniel C. Efficient verification for coarse/fine programming of non-volatile memory
US20050248988A1 (en) 2004-05-05 2005-11-10 Guterman Daniel C Boosting to control programming of non-volatile memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11594293B2 (en) 2020-07-10 2023-02-28 Samsung Electronics Co., Ltd. Memory device with conditional skip of verify operation during write and operating method thereof

Also Published As

Publication number Publication date
TWI328231B (en) 2010-08-01
KR20080096645A (ko) 2008-10-31
WO2007076512A2 (en) 2007-07-05
WO2007076512A3 (en) 2007-08-16
EP1966802A2 (en) 2008-09-10
JP4638544B2 (ja) 2011-02-23
JP2009522707A (ja) 2009-06-11
TW200746151A (en) 2007-12-16

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