KR101292211B1 - Substrate cohesion appratus and substrate cohesion method - Google Patents

Abstract

The present invention relates to a substrate bonding apparatus and a substrate bonding method. The substrate bonding apparatus according to the present invention includes a first chamber having a first chuck to which a first substrate is attached, and a second chuck to which a second substrate is attached. A second chamber, a drive unit which closely contacts the first chamber and the second chamber to form a processing chamber, and injects gas into the first substrate to separate the first substrate from the first chuck and continuously maintain the gas. And a pressure controller for controlling the pressure inside the processing chamber to be higher than the pressure outside the processing chamber. The substrate bonding apparatus and the substrate bonding method have a pressure inside the chamber higher than a pressure outside the chamber to open the chamber. The pressure difference between the outside and the outside may have an effect of preventing the inflow of impurities.

Board Bonding, Board Bonding Device, Bonding Method

Description

Substrate cohesion appratus and substrate cohesion method

1 is a cross-sectional view schematically showing a substrate bonding apparatus according to an embodiment of the present invention.

2 is a block diagram showing the configuration of a pressure control system according to an embodiment of the present invention.

3 is a block diagram showing a configuration of a pressure control system according to another embodiment of the present invention.

4 is a flowchart illustrating an operation of a pressure control system according to an embodiment of the present invention.

5 is a flowchart showing a substrate bonding method according to an embodiment of the present invention.

6 is a graph showing a pressure change inside the processing chamber according to the substrate bonding method of the present invention.

The present invention relates to a substrate bonding apparatus and a substrate bonding method, and more particularly, to a substrate bonding apparatus and a substrate bonding method for raising a pressure inside the chamber to a pressure outside the chamber.

The LCD industry has been in increasing demand as technology has developed, forming a large market. The TFT-LCD industry is one of the industrial sectors with international competitiveness as the national infrastructure industry. In addition, TFT-LCD is a technology-intensive item that combines liquid crystal technology and semiconductor technology. It is possible to reduce light weight and light weight, and has a wide range of applications with high-definition and low power consumption products, so it can be used in various fields such as PC, notebook, PDA, mobile phone, and TV. It is utilized. In addition, the development of next-generation high-performance products is continuously progressed due to increasing demand for high resolution, high opening ratio, large area, and high functionalization.

Such a TFT-LCD spreads a spacer for maintaining a constant gap between a color filter (CF) and a thin film transistor (TFT) substrate, and after bonding the substrates, cuts the bonded substrates and injects liquid crystal into the inside. Undergoes a manufacturing process. Among these, the bonding process is an important process. CF and TFT are opposed to each other at regular intervals, and the alignment is performed with high accuracy, so that a good quality liquid crystal panel can be manufactured.

As a prior art of the substrate bonding method, Korean Patent Publication No. 10-2006-0017356. There is a "substrate bonding device". The published patent uses atmospheric pressure inside the chamber to bond the substrate and open the chamber. When opening the chamber, it is important to reduce the pressure difference between the inside and outside of the chamber in order to prevent foreign matter from entering the outside of the chamber. However, most substrate bonding methods have a problem in that the quality of the bonded substrate is lowered due to the inflow of foreign substances due to the pressure difference when the substrate is taken out even though the pressure difference between the chamber and the chamber is reduced.

The present invention is to solve the above problems, an object of the present invention is to provide a substrate bonding apparatus and a substrate bonding method for raising the pressure inside the chamber than the pressure outside the chamber.

A substrate bonding apparatus according to the present invention for achieving the above object is a first chamber having a first chuck to which the first substrate is attached, a second chamber having a second chuck to which the second substrate is attached, the first A gas is injected into the driving unit and the first substrate to closely contact the chamber and the second chamber to separate the first substrate from the first chuck, and the gas is continuously injected to continuously press the pressure inside the processing chamber. The pressure control part which controls so that it may be higher than the pressure of the said process chamber exterior is provided.

The pressure controller may be connected to a sensor for measuring the pressure inside the processing chamber to receive pressure information, and control the flow controller to adjust the flow rate of the gas according to the pressure information.

The pressure control unit may inject gas by setting a gas injection time at which the pressure inside the processing chamber is raised above the pressure outside the processing chamber, and adjust the flow rate of the gas according to the set gas injection time.

The substrate bonding method according to the present invention for achieving the above object is the step of attaching the first substrate to the first chuck provided in the first chamber, the second substrate attached to the second chuck provided in the second chamber, Contacting the first chamber to which the first substrate is attached and the second chamber to which the second substrate is attached to form a process chamber, and vacuuming the process chamber formed by the first chamber and the second chamber to a vacuum state. Making, the first substrate and the second substrate are bonded to each other in the vacuum process chamber, and after the first and second substrates are bonded together, increasing a pressure inside the processing chamber to a pressure outside the process chamber; and Opening the process chamber.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

1 is a cross-sectional view schematically showing a substrate bonding apparatus according to an embodiment of the present invention.

As shown in FIG. 1, the substrate bonding apparatus includes a first chamber 110, a second chamber 120, a driver 400, and a pressure controller 600.

When the substrate is bonded, the first chamber 110 and the second chamber 120 are provided in a frame (not shown). The first chamber 110 is provided on one side inside the frame and has a first surface plate 200, and the second chamber 120 is located on the other side where the first chamber 110 is provided and the second surface plate 210 is provided. It is provided.

The first chamber 110 and the second chamber 120 should have a structure in which a substrate can be loaded in the opening and a sealed process chamber 100 can be provided to form a vacuum state when the substrate is opened. The first chamber 110 and the second chamber 120 may be an upper chamber or a lower chamber.

Subsequently, the first surface plate 200 provided in the first chamber 110 provides a first chuck 201 for attaching the substrate, and absorbs the substrate brought in by a transfer device (not shown). An adsorption pin 310 is provided to raise the position of the surface plate 200.

)을 흡착할 수 있도록 공기의 압력을 조절하는 진공펌프(미도시)와 제 1기판(

)이 제 1척(201)에 부착될 수 있도록 흡착핀(310)을 상하로 구동시킬 수 있는 핀구동부(미도시)로 구성된다. Suction pin 310 is connected to the pin control unit 300, the pin control unit 300 is the first substrate (

Vacuum pump (not shown) and the first substrate (to adjust the pressure of the air to adsorb)

) Is composed of a pin driver (not shown) capable of driving the suction pin 310 up and down so that it can be attached to the first chuck 201.

In addition, the first surface plate 200 has a pressure hole 601 through which gas is injected to uniformly separate the substrate attached to the first chuck 201. The pressure hole 601 is composed of at least one hole and is connected to the flow controller 620.

The flow controller 620 is connected to the pressure control unit 600 connected to the sensor 630 for measuring and transmitting the pressure in the processing chamber 100, and controls the flow rate of the gas commanded by the pressure control unit 600.

Detailed description will be described in the pressure control system of FIG. 2.

)을 흡착하기 위한 흡착핀(310)과 흡착한 제 2기판(

)을 부착시키기 위한 제 2척(211)을 구비한다. 제 1기판(

)과 제 2기판(

)은 TFT기판 또는 CF기판일 수 있다. Subsequently, the second substrate 210 provided in the second chamber 120 also has a structure in which the substrate can adsorb and attach the substrate to the second substrate 120.

Adsorption pin 310 for adsorption and the second substrate (

) Is provided with a second chuck 211 for attaching. First substrate

) And the second substrate (

) May be a TFT substrate or a CF substrate.

The first and second chucks can use an electrostatic chuck.

The driving unit 400 vertically moving when the first chamber 110 and the second chamber 120 are in close contact with each other is connected to the first chamber 110 and has a structure capable of driving in a linear direction. The processing chamber 100 formed while the first chamber 110 and the second chamber 120 are in close contact with each other is sealed and is vacuumed by the vacuum means 500.

The vacuum means 500 is located in a predetermined region of the chamber 100 and is connected to the processing chamber 100 to suck and remove gas from the processing chamber 100, and a vacuum pump, a jet ejector, or the like may be used.

)과 제 2기판(

)을 정렬시키기 위한 카메라(700)와 조명장치(710)가 구비된다. 카메라(700)는 제 1챔버(110)의 상부에 위치하며 조명장치(710)는 제 2챔버(120)의 하부에 위치한다. 카메라(700)는 제 1챔버(110)와 제 1정반(200)을 관통하는 홀(701)에 연결되어 제 1기판(

)과 제 2기판(

)에 표시된 임의의 마크를 촬영할 수 있도록 한다. The first substrate in vacuum

) And the second substrate (

The camera 700 and the lighting device 710 for aligning are provided. The camera 700 is located above the first chamber 110 and the lighting device 710 is located below the second chamber 120. The camera 700 is connected to a hole 701 that penetrates the first chamber 110 and the first surface plate 200 so that the first substrate (

) And the second substrate (

Allows you to shoot any mark indicated by).

)과 제 2기판(

)의 임의의 마크부분에 광을 투사한다. 제 1기판(

)과 제 2기판(

)의 정렬된 상태가 일치하지 않는 경우 정확한 합착을 위한 조절이 필요하게 된다. In addition, the lighting device 710 is a first substrate (so that the camera can shoot any mark)

) And the second substrate (

The light is projected onto any mark portion of the " First substrate

) And the second substrate (

If the aligned state of) does not coincide, adjustment for correct bonding is necessary.

Position adjusting unit (not shown) for adjusting the alignment of the substrate is capable of adjusting the inclination of the first surface 200 or the second surface 210, the position of the first surface 200 or the second surface (210) Can be moved on the X and Y axes.

2 is a block diagram showing the configuration of a pressure control system according to an embodiment of the present invention.

As shown in FIG. 2, the pressure system includes a pressure controller 600, a gas storage tank 610, a sensor 630, a flow controller 620, and a gas supply line 611.

The pressure controller 600 is connected to the sensor 630 for measuring the pressure in the processing chamber 100 to receive the pressure information provided by the sensor 630, and is connected to the flow controller 620 to receive from the sensor 630 According to the received pressure information, the flow controller 620 controls to adjust the gas flow rate.

) 또는 삼불화질소(

) 또는 아르곤(

)이 사용될 수 있다. The gas storage tank 610 is provided at the outside of the substrate bonding apparatus and uniformly separates the substrate attached to the first chuck 201, and supplies a gas necessary for raising the pressure inside the processing chamber 100 to an outside pressure. It serves to keep. The gas is chemically stable and does not affect the substrate

) Or nitrogen trifluoride (

) Or argon (

) Can be used.

The sensor 630 is mounted inside the processing chamber 100 and uses a pressure sensor that measures the pressure inside the processing chamber 100. The pressure information measured by the pressure sensor is transmitted to the pressure controller 600, and the gas flow rate of the flow controller 620 is adjusted by the pressure controller 600 which receives the pressure information. The pressure sensor may use a semiconductor pressure sensor.

The flow controller 620 is connected to the gas storage tank 610 and is connected to the pressure control unit 600. When the sensor 630 transmits the pressure information inside the processing chamber 100 to the pressure controller 600, the flow rate of the gas may be adjusted. As the flow controller 620, a mass flow controller (MFC) may be used.

The gas supply line 611 serves to supply gas provided from the gas storage tank 610 to the pressure hole 601 and connects the gas storage tank 610 and the flow controller 620.

3 is a block diagram showing a configuration of a pressure control system according to another embodiment of the present invention.

As shown in FIG. 3, the pressure control system includes a pressure control unit 600 ′, a gas storage tank 610 ′, a sensor 630 ′, a flow controller 620 ′, a gas supply line 611 ′, a pin control unit ( 300 ').

The description of the constituent devices is the same as that of the second embodiment, and will not be repeated.

However, in the present embodiment, the pin control unit 300 'is reconfigured into a structure included in the pressure control system, and the suction pin 310 for adsorbing the substrate by adjusting the pressure is used as the pressure hole 601 through which the gas is injected. will be.

The suction pin 310 adsorbs the substrate loaded by the transfer apparatus using pressure, and vertically moves the adsorbed substrate to attach to the first chuck 201. Then, when the inside of the processing chamber 100 is in a vacuum state for the bonding process, the sensor 630 'detects the vacuum state and transmits the pressure information to the pressure control unit 600', and the gas injection command of the pressure control unit 600 'is performed. The gas is injected from the suction pin of the pin control unit 300 '.

Thereafter, the gas stored in the gas storage tank 610 ′ is sprayed from the suction pin 310 to separate the substrate, and the pressure inside the processing chamber 100 is continuously injected by continuous injection of the gas injected from the suction pin 310. It is in a state higher than the pressure.

4 is a flowchart illustrating an operation of a pressure control system according to an embodiment of the present invention.

When gas is injected into the closed process chamber 100 (S10), the sensor 630 mounted in the process chamber 100 starts to measure pressure (S20).

The sensor 630 in the processing chamber 100 transmits the pressure value in the processing chamber 100 to the pressure control unit 600 (S30), and the pressure control unit 600 includes the pressure value in the processing chamber 100 and the processing chamber 100. ) Compare the external pressure value (S40).

At this time, when the pressure value inside the processing chamber 100 is smaller than the pressure value outside the processing chamber 100, the pressure control unit 600 transmits a command to increase the gas flow rate to the flow controller 620 (S50).

When the gas flow is continuously injected into the processing chamber 100, the sensor 630 inside the processing chamber 100 measures the pressure inside the processing chamber 100, and the pressure control unit 600 measures the pressure inside the processing chamber 100. Send pressure information.

When the pressure inside the processing chamber 100 rises above the pressure outside the processing chamber 100 while repeating the above process, the pressure controller 600 instructs the flow controller 620 to reduce the gas flow rate, and then the driving unit 400. The process chamber 100 is opened by (S60).

5 is a flowchart showing a substrate bonding method according to an embodiment of the present invention.

)은 임의의 이송장치(미도시)에 의해 챔버 내부로 반입되고, 제 1정반(200)에 마련된 흡착핀(310)에 의해 흡착되어 제 1척(201)에 장착된다. 이후 제 2기판(

)이 임의의 이송장치에 의해 챔버 내부로 반입되고, 제 2정반(210)에 마련된 흡착핀(310)에 의해 흡착되어 제 2척(211)에 장착된다(S100). The first substrate (

) Is carried into the chamber by an optional transfer device (not shown), is adsorbed by the suction pin 310 provided on the first surface plate 200 is mounted on the first chuck 201. After that, the second substrate (

) Is introduced into the chamber by an optional transfer device, is adsorbed by the suction pin 310 provided on the second surface plate 210 and mounted on the second chuck 211 (S100).

When the first chamber 110 is lowered by the driving unit 400 after the substrate is mounted, the first chamber 110 and the second chamber 120 are in close contact with each other to form a sealed processing chamber 100.

Thereafter, the vacuum means 500 for sucking the impurity gas in the processing chamber 100 formed by the first chamber 110 and the second chamber 120 to make a vacuum state S200 is operated.

)과 제 2기판(

)의 정렬상태를 확인하기 위한 카메라(700)와 조명장치(710)가 작동된다. When the vacuum state of the processing chamber 100 formed by the first chamber 110 and the second chamber 120 is achieved, the first substrate (

) And the second substrate (

The camera 700 and the lighting device 710 to check the alignment state of the) is operated.

)과 제 2기판(

)의 임의의 마크부분에 투사되면 카메라(700)에 임의의 마크가 촬영된다. 마크 촬영 결과 제 1기판(

)과 제 2기판(

)이 정확히 정렬되지 않았을 경우 위치조절부(미도시)에 의해 제 1정반(200) 또는 제 2정반(210)의 기울기 및 위치 이동이 이루어져 기판을 정렬시킨다(S300). Light of the lighting device 710 is the first substrate (

) And the second substrate (

When projected on any mark portion of the image, any mark is captured by the camera 700. Mark photographing result first board (

) And the second substrate (

) Is not exactly aligned, the inclination and position movement of the first surface 200 or the second surface 210 is made by the position adjusting unit (not shown) to align the substrate (S300).

)과 제 2기판(

)이 정확히 정렬되면 제 1 척(201)의 전원공급이 중단되고, 압력 제어부(600)에 의해 유량제어기(620)에서 기체가 분사되어 제 1기판(

)이 제 2기판(

) 상으로 낙하하여 가접합 된다. 이후 기체를 계속 주입하면 제 1기판(

)과 제 2기판(

)이 합착(S400)된다. Due to the position adjustment, the first substrate (

) And the second substrate (

) Is correctly aligned, the power supply of the first chuck 201 is stopped, the gas is injected from the flow controller 620 by the pressure control unit 600 to the first substrate (

) This second substrate (

) And it is temporarily joined. After the gas is continuously injected, the first substrate (

) And the second substrate (

) Is bonded (S400).

Subsequently, the flow controller 620 continuously injects gas so that the inside of the processing chamber 100 forms a pressure higher than the pressure outside the processing chamber 100 (S500). When the sensor 630 in the processing chamber 100 transmits information on the pressure in the processing chamber 100 to the pressure control unit 600, the pressure control unit 600 controls the gas flow rate control of the flow controller 620 to process the processing chamber. The pressure inside the 100 is adjusted. Finally, the process chamber 100 is opened (S600).

As another method of increasing the pressure inside the processing chamber 100 above the pressure outside the processing chamber 100, the gas is injected by setting a gas injection time at which the pressure inside the processing chamber 100 rises above the pressure outside the processing chamber 100. And, there may be a method for adjusting the flow rate of the gas in accordance with the set gas injection time.

6 is a graph showing a pressure change inside the processing chamber according to the substrate bonding method of the present invention. The horizontal axis of the graph represents time and the vertical axis represents pressure.

As shown in FIG. 6, the pressure inside the process chamber 100 that is opened and closed is equal to the pressure P2 outside the process chamber 100, as seen in the section 0 to T1.

Thereafter, the pressure inside the processing chamber 100 is dropped by the vacuum means 500 in the period T1 to T2 to reach P0. The pressure is denoted by P0 because the vacuum in a perfect confined space is difficult.

)의 균일한 분리를 위해 기체분사가 필요하게 된다.The substrate is aligned by the position detection and position control of the substrate in the section T2 to T3, and the power supply cutoff of the first chuck 201 is performed. At this time, since the electrostatic force remains in the first chuck 201, the first substrate (

Gas injection is necessary for the uniform separation of).

)에 기체를 분사하게 되고, T4~T5구간에서 제 1척(201)에 부착된 제 1기판(

)이 분리되어 제 2기판(

)과 가접합된다.Subsequently, in the sections T3 to T4, the first substrate (

Gas is injected into the first substrate (1) attached to the first chuck 201 in a section T4 to T5.

) Is separated and the second substrate (

) Is temporarily bonded.

)과 제 2기판(

)이 합착된다. 또한 처리실(100) 외부의 압력 P2보다 더 높은 압력 P3에 이르면 센서(630)가 감지하여 압력제어부(600)에 압력정보를 전달하게 되고, 압력제어부(600)는 기체의 유량을 조절하는 유량제어기(620)를 제어하여 압력 P3이 유지된다. Subsequently, gas is continuously injected in the T5 ~ T6 section to form the first substrate (

) And the second substrate (

) Is coalesced. In addition, when the pressure reaches a pressure P3 higher than the pressure P2 outside the processing chamber 100, the sensor 630 detects and transmits the pressure information to the pressure controller 600, and the pressure controller 600 controls the flow rate of the gas. The pressure P3 is maintained by controlling 620.

When the pressure inside the processing chamber 100 is higher than the pressure P2 outside the processing chamber 100, the processing chamber 100 is opened to become the same as the pressure P2 outside the processing chamber 100, such as the sections T7 to T8.

At this time, due to the pressure difference between the pressures P3 and P2, the gas inside the processing chamber 100 is discharged to the outside to prevent foreign substances from flowing into the processing chamber 100.

The substrate bonding apparatus and the substrate bonding method according to the present invention as described above, by increasing the pressure than the outside of the chamber by the continuous injection of gas into the chamber to prevent impurities that can be introduced from the outside due to the pressure difference when the chamber is opened. It is effective in producing a high quality bonded substrate.

Claims (4)

A first chamber having a first chuck to which the first substrate is attached; A second chamber having a second chuck to which the second substrate is attached; A driving unit which closely contacts the first chamber and the second chamber to form a processing chamber; And And a pressure control unit for injecting gas into the first substrate to separate the first substrate from the first chuck and continuously injecting the gas to control the pressure inside the processing chamber to be higher than the pressure outside the processing chamber. Substrate bonding apparatus, characterized in that. The substrate bonding method of claim 1, wherein the pressure control unit is connected to a sensor for measuring a pressure in the processing chamber to receive pressure information and to instruct the flow controller to adjust the flow rate of the gas according to the pressure information. Device. The method of claim 1, wherein the pressure controller injects gas by setting a gas injection time at which the pressure inside the processing chamber is raised above a pressure outside the processing chamber, and adjusts a flow rate of the gas according to the set gas injection time. Substrate bonding device. Attaching a first substrate to a first chuck provided in the first chamber, and attaching a second substrate to a second chuck provided in the second chamber; Forming a process chamber by closely contacting the first chamber to which the first substrate is attached and the second chamber to which the second substrate is attached; Vacuuming the process chamber formed by the first chamber and the second chamber; Bonding the first substrate and the second substrate to each other in the vacuum processing chamber; Increasing the pressure inside the process chamber after the bonding of the first substrate and the second substrate to a pressure outside the process chamber; And A substrate bonding method comprising the step of opening the processing chamber.

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