KR101289516B1 - Ｃｍｏｓ 촬상 센서 및 촬상 디바이스 - Google Patents

Ｃｍｏｓ 촬상 센서 및 촬상 디바이스 Download PDF

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KR101289516B1
KR101289516B1 KR1020087009790A KR20087009790A KR101289516B1 KR 101289516 B1 KR101289516 B1 KR 101289516B1 KR 1020087009790 A KR1020087009790 A KR 1020087009790A KR 20087009790 A KR20087009790 A KR 20087009790A KR 101289516 B1 KR101289516 B1 KR 101289516B1
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column
circuit
pixel
signal level
reset signal
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KR20080063361A (ko
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크리스티나 팬
마르코 카자니가
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옴니비전 테크놀러지즈 인코포레이티드
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/627—Detection or reduction of inverted contrast or eclipsing effects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020087009790A 2005-10-26 2006-10-12 Ｃｍｏｓ 촬상 센서 및 촬상 디바이스 Active KR101289516B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/258,812 US7573519B2 (en) 2005-10-26 2005-10-26 Method for correcting eclipse or darkle
US11/258,812 2005-10-26
PCT/US2006/039786 WO2007050298A1 (en) 2005-10-26 2006-10-12 Method for correcting eclipse or darkle

Publications (2)

Publication Number Publication Date
KR20080063361A KR20080063361A (ko) 2008-07-03
KR101289516B1 true KR101289516B1 (ko) 2013-07-24

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KR1020087009790A Active KR101289516B1 (ko) 2005-10-26 2006-10-12 Ｃｍｏｓ 촬상 센서 및 촬상 디바이스

Country Status (6)

Country Link
US (1) US7573519B2 (enExample)
EP (1) EP1941716B1 (enExample)
JP (1) JP2009514352A (enExample)
KR (1) KR101289516B1 (enExample)
CN (1) CN101305593B (enExample)
WO (1) WO2007050298A1 (enExample)

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US7916186B2 (en) 2005-04-07 2011-03-29 Micron Technology, Inc. Anti-eclipse circuitry with tracking of floating diffusion reset level
KR100834763B1 (ko) * 2006-11-14 2008-06-05 삼성전자주식회사 동적 촬영 대역의 확장을 위한 이미지 센서 및 화소에수광된 광량을 측정하는 방법
JP5304410B2 (ja) * 2009-04-17 2013-10-02 ソニー株式会社 Ａｄ変換装置、固体撮像素子、およびカメラシステム
US8310580B2 (en) * 2009-07-27 2012-11-13 Sony Corporation Solid-state imaging device and camera system for suppressing occurrence of quantization vertical streaks
US9516239B2 (en) 2012-07-26 2016-12-06 DePuy Synthes Products, Inc. YCBCR pulsed illumination scheme in a light deficient environment
US10568496B2 (en) 2012-07-26 2020-02-25 DePuy Synthes Products, Inc. Continuous video in a light deficient environment
US10206561B2 (en) 2013-02-28 2019-02-19 DePuy Synthes Products, Inc. Videostroboscopy of vocal cords with CMOS sensors
CA2906798A1 (en) 2013-03-15 2014-09-18 Olive Medical Corporation Super resolution and color motion artifact correction in a pulsed color imaging system
WO2014144986A1 (en) 2013-03-15 2014-09-18 Olive Medical Corporation Scope sensing in a light controlled environment
US9777913B2 (en) 2013-03-15 2017-10-03 DePuy Synthes Products, Inc. Controlling the integral light energy of a laser pulse
US9380232B2 (en) 2014-02-20 2016-06-28 Semiconductor Components Industries, Llc Image sensors with anti-eclipse circuitry
EP3119265B1 (en) 2014-03-21 2019-09-11 DePuy Synthes Products, Inc. Card edge connector for an imaging sensor
JP6748622B2 (ja) * 2017-02-16 2020-09-02 ソニーセミコンダクタソリューションズ株式会社 撮像システムおよび撮像装置
US10582138B2 (en) * 2017-09-22 2020-03-03 Semiconductor Components Industries, Llc Image sensors with dual conversion gain pixels and anti-eclipse circuitry
US10477126B1 (en) 2018-09-05 2019-11-12 Smartsens Technology (Cayman) Co., Limited Dual eclipse circuit for reduced image sensor shading
US10873716B2 (en) 2018-11-05 2020-12-22 SmartSens Technology (HK) Co., Ltd. Dual row control signal circuit for reduced image sensor shading
US10727268B1 (en) 2019-01-25 2020-07-28 Smartsens Technology (Cayman) Co., Ltd CMOS image sensor with compact pixel layout
US10652492B1 (en) 2019-02-12 2020-05-12 Smartsens Technology (Cayman) Co., Ltd. CMOS image sensor with improved column data shift readout
CN110896082A (zh) 2019-05-28 2020-03-20 思特威(上海)电子科技有限公司 具有新型布局的图像传感器

Citations (2)

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US6469740B1 (en) * 1997-02-04 2002-10-22 Matsushita Electric Industrial Co., Ltd. Physical quantity distribution sensor and method for driving the same
US20040036783A1 (en) * 2002-08-22 2004-02-26 Barna Sandor L. Asymmetric comparator for use in pixel oversaturation detection

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JP3517614B2 (ja) * 1998-12-25 2004-04-12 株式会社東芝 固体撮像装置
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US6803958B1 (en) * 1999-03-09 2004-10-12 Micron Technology, Inc. Apparatus and method for eliminating artifacts in active pixel sensor (APS) imagers
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US6888572B1 (en) * 2000-10-26 2005-05-03 Rockwell Science Center, Llc Compact active pixel with low-noise image formation
US6822679B1 (en) * 2000-10-31 2004-11-23 Texas Instruments Incorporated Offset correction to the output of a charge coupled device
JP2003023570A (ja) * 2001-07-06 2003-01-24 Sanyo Electric Co Ltd 画像データの修正方法及び画像信号処理装置
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KR100574891B1 (ko) 2003-01-13 2006-04-27 매그나칩 반도체 유한회사 클램프 회로를 갖는 이미지센서
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JP4517660B2 (ja) * 2004-02-09 2010-08-04 ソニー株式会社 固体撮像装置、画像入力装置および固体撮像素子の駆動方法
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US7477298B2 (en) * 2004-08-30 2009-01-13 Micron Technology, Inc. Anti-eclipsing circuit for image sensors
US7659928B2 (en) * 2005-04-21 2010-02-09 Aptina Imaging Corporation Apparatus and method for providing anti-eclipse operation for imaging sensors

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6469740B1 (en) * 1997-02-04 2002-10-22 Matsushita Electric Industrial Co., Ltd. Physical quantity distribution sensor and method for driving the same
US20040036783A1 (en) * 2002-08-22 2004-02-26 Barna Sandor L. Asymmetric comparator for use in pixel oversaturation detection

Also Published As

Publication number Publication date
US7573519B2 (en) 2009-08-11
US20070091193A1 (en) 2007-04-26
JP2009514352A (ja) 2009-04-02
CN101305593A (zh) 2008-11-12
WO2007050298A1 (en) 2007-05-03
KR20080063361A (ko) 2008-07-03
EP1941716B1 (en) 2018-07-04
CN101305593B (zh) 2010-12-08
EP1941716A1 (en) 2008-07-09

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