KR101288411B1 - 감광성 수지 조성물, 이를 이용한 포토레지스트 패턴 형성방법 및 표시 기판의 제조 방법 - Google Patents

감광성 수지 조성물, 이를 이용한 포토레지스트 패턴 형성방법 및 표시 기판의 제조 방법 Download PDF

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Publication number
KR101288411B1
KR101288411B1 KR1020050117111A KR20050117111A KR101288411B1 KR 101288411 B1 KR101288411 B1 KR 101288411B1 KR 1020050117111 A KR1020050117111 A KR 1020050117111A KR 20050117111 A KR20050117111 A KR 20050117111A KR 101288411 B1 KR101288411 B1 KR 101288411B1
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South Korea
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weight
resin composition
photosensitive resin
methacrylate
acrylate
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Expired - Fee Related
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KR1020050117111A
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English (en)
Korean (ko)
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KR20070057540A (ko
Inventor
노영태
나윤정
박은준
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삼성디스플레이 주식회사
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Priority to KR1020050117111A priority Critical patent/KR101288411B1/ko
Priority to US11/550,897 priority patent/US7371499B2/en
Priority to JP2006324270A priority patent/JP4817188B2/ja
Publication of KR20070057540A publication Critical patent/KR20070057540A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020050117111A 2005-12-02 2005-12-02 감광성 수지 조성물, 이를 이용한 포토레지스트 패턴 형성방법 및 표시 기판의 제조 방법 Expired - Fee Related KR101288411B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020050117111A KR101288411B1 (ko) 2005-12-02 2005-12-02 감광성 수지 조성물, 이를 이용한 포토레지스트 패턴 형성방법 및 표시 기판의 제조 방법
US11/550,897 US7371499B2 (en) 2005-12-02 2006-10-19 Photoresist resin composition, method of forming a photoresist pattern, and method of manufacturing a display substrate using the same
JP2006324270A JP4817188B2 (ja) 2005-12-02 2006-11-30 感光性樹脂組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050117111A KR101288411B1 (ko) 2005-12-02 2005-12-02 감광성 수지 조성물, 이를 이용한 포토레지스트 패턴 형성방법 및 표시 기판의 제조 방법

Publications (2)

Publication Number Publication Date
KR20070057540A KR20070057540A (ko) 2007-06-07
KR101288411B1 true KR101288411B1 (ko) 2013-07-22

Family

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KR1020050117111A Expired - Fee Related KR101288411B1 (ko) 2005-12-02 2005-12-02 감광성 수지 조성물, 이를 이용한 포토레지스트 패턴 형성방법 및 표시 기판의 제조 방법

Country Status (3)

Country Link
US (1) US7371499B2 (https=)
JP (1) JP4817188B2 (https=)
KR (1) KR101288411B1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102059225B1 (ko) 2015-11-27 2019-12-26 주식회사 엘지화학 경화형 조성물 및 이를 이용한 패턴의 제조방법

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KR100701641B1 (ko) * 2004-08-02 2007-03-30 도레이새한 주식회사 진공증착에 의해 구리도금층을 형성하는 연성회로기판용 적층구조체의 제조방법 및 그 장치
JP4849251B2 (ja) * 2007-01-18 2012-01-11 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法
JP4352085B2 (ja) 2007-12-18 2009-10-28 株式会社東芝 情報処理装置および切断制御方法
KR101378439B1 (ko) * 2008-08-20 2014-03-28 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101669085B1 (ko) * 2009-01-28 2016-10-25 제이에스알 가부시끼가이샤 감방사선성 수지 조성물 및, 층간 절연막 및 그의 형성 방법
KR101290057B1 (ko) * 2010-07-19 2013-07-26 주식회사 엘지화학 코팅성과 재코팅성이 우수한 열경화성 보호막 조성물
KR101229960B1 (ko) * 2011-01-28 2013-02-06 한양대학교 산학협력단 광산발생제를 포함하는 테트라 폴리머 레지스트 및 이의 제조 방법
JP5727350B2 (ja) * 2011-10-26 2015-06-03 信越化学工業株式会社 リソグラフィー用レジスト組成物の製造方法、レジスト保護膜形成用組成物の製造方法、ケイ素含有レジスト下層膜形成用組成物の製造方法、及び有機レジスト下層膜形成用組成物の製造方法
KR102025099B1 (ko) * 2011-12-13 2019-09-25 주식회사 동진쎄미켐 포토레지스트 조성물
US20140240645A1 (en) * 2013-02-27 2014-08-28 Samsung Display Co., Ltd. Photosensitive resin composition, display device using the same and method of manufacturing the display device
US9772558B2 (en) 2013-09-24 2017-09-26 International Business Machines Corporation Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
CN109422987B (zh) * 2017-08-30 2021-03-09 京东方科技集团股份有限公司 平坦层用组合物、其制备方法、平坦层材料及显示装置
JP7056320B2 (ja) * 2018-03-30 2022-04-19 住友ベークライト株式会社 感光性樹脂組成物、樹脂膜及び電子装置
JP2025110048A (ja) 2024-01-15 2025-07-28 Jsr株式会社 感放射線性組成物、硬化膜、表示素子、及び硬化膜の製造方法

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JP2003215800A (ja) 2002-01-24 2003-07-30 Kodak Polychrome Graphics Japan Ltd 感光性組成物および感光性平版印刷版
JP2005070735A (ja) 2003-08-01 2005-03-17 Jsr Corp 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法

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JPS63250311A (ja) * 1987-04-06 1988-10-18 Kao Corp 油中水型化粧料
JPH07281018A (ja) * 1994-04-06 1995-10-27 Sumitomo Chem Co Ltd ポジ型レジスト組成物
DE60137398D1 (de) * 2000-11-30 2009-03-05 Fujifilm Corp Lithographische Druckplattenvorläufer
KR100973799B1 (ko) * 2003-01-03 2010-08-03 삼성전자주식회사 Ｍｍｎ 헤드 코터용 포토레지스트 조성물
KR20050022494A (ko) * 2003-09-02 2005-03-08 삼성전자주식회사 스핀레스 코터용 액정표시소자의 포토레지스트 조성물과이를 이용한 포토레지스트 패턴 형성 방법
JP4586703B2 (ja) * 2004-10-14 2010-11-24 住友化学株式会社 感放射線性樹脂組成物
KR101112545B1 (ko) * 2004-12-16 2012-03-13 스미또모 가가꾸 가부시끼가이샤 감광성 수지 및 상기 감광성 수지로 이루어진 패턴을포함하는 박막 표시판 및 그 제조 방법
KR101209049B1 (ko) * 2004-12-24 2012-12-07 스미또모 가가꾸 가부시끼가이샤 감광성 수지 및 상기 감광성 수지로 이루어진 패턴을 포함하는 박막 표시판 및 그 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003215800A (ja) 2002-01-24 2003-07-30 Kodak Polychrome Graphics Japan Ltd 感光性組成物および感光性平版印刷版
JP2005070735A (ja) 2003-08-01 2005-03-17 Jsr Corp 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102059225B1 (ko) 2015-11-27 2019-12-26 주식회사 엘지화학 경화형 조성물 및 이를 이용한 패턴의 제조방법

Also Published As

Publication number Publication date
JP4817188B2 (ja) 2011-11-16
JP2007156471A (ja) 2007-06-21
KR20070057540A (ko) 2007-06-07
US7371499B2 (en) 2008-05-13
US20070128540A1 (en) 2007-06-07

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