KR101279951B1 - Apparatus for contact film and method for manufacturing the same - Google Patents

Abstract

PURPOSE: Contact film and manufacturing method thereof are provided to perform accurate inspection by improving a contact area between contact film and device. CONSTITUTION: A contact film (100) includes a base layer (110) including a plurality of via holes, a via hole in which a conductor (131) is filled, a bump (132) made of the same material with the conductor by being connected to the conductor and protruded from the top surface, a secondary bump made of a different material with the conductor and bump and prepared on the top surface of the bump, and a via hole connection line (140) connected to the conductor exposed to the bottom surface of the base layer.

Description

Contact film and its manufacturing method {Apparatus for contact film and method for manufacturing the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact film used in a device for inspecting various devices and a method for manufacturing the same, and to a contact film and a manufacturing method for improving the contact area between the contact film and the device so that accurate inspection can be performed.

LCD (Liquid Crystal Display) production process is a cell process for manufacturing display panels, and a module for assembling drivers, backlights, light guide plates, and polarizers with display panels produced in cell processes to make finished products. It is roughly referred to as a module assembly process.

Here, the display panel is an image display device in which the surfaces on which the source electrode and the gate electrode are formed are disposed to face each other on a substrate. The display panel injects a liquid crystal material between the substrates, and then generates an electric field by applying a voltage to the two electrodes. The liquid crystal molecules are moved by the generated electric field to change the transmittance of light to express an image.

In this case, the display inspection probe unit (hereinafter, referred to as a “probe unit”) performs an inspection on the display panel produced through a cell process to check whether there is a defect that may occur in the manufacturing process.

For example, the probe unit may be a display such as thin film transistor (TFT), twisted nematic (TN), super twisted nematic (STN), color super twisted nematic (CSTN), double super twisted nematic (DSTN), organic electroluminescent (EL), or the like. A test electrical signal is applied to the electrodes (or pads) of the panel to check whether the corresponding display panel is operating normally without pixel error.

1 is an overall configuration diagram of a probe unit for inspecting a conventional display panel.

The probe unit 1 is positioned on the display panel 2 to check for abnormalities of the cells. In this case, the probe unit 1 applies an electrical signal to the electrode of the display panel 2 and receives the output signal according to the output signal to the inspection system. Through this process, it is possible to inspect the presence of defects such as point defects, predecessors, and stain defects of the display panel 2 that may occur in the manufacturing process. The probe unit includes a PCB portion, a head block, and a contact film. The PCB unit generates an electrical signal for inspecting each cell of the display panel and transmits the electrical signal to the contact film. The head block moves the contact film up and down or fixes it in a position such that the probe of the contact film contacts the electrode of the display panel at a suitable physical pressure. The contact film contacts an electrode of a display panel to apply an electrical signal and detects an output signal accordingly.

2 is a perspective view illustrating an example of a contact film in a conventional probe unit.

The conventional contact film 10 includes a base film 11 including a plurality of via holes, a bump 12 protruding from one surface of the base film as a conductor filled in the via holes of the base film, and exposed to the other surface of the base film. The via hole connecting wiring 13 is electrically connected to the conductor. The bump 12 is part of the conductor filled in the via hole. The contact film 10 contacts the bumps 12 to the electrodes of the display panel 2 to apply an electrical signal, and detects an output signal according to the test process.

In order to protrude the bump from the via hole, a process of etching the area of the remaining base layer leaving the area of the via hole is performed. When the base layer is etched using the etchant to protrude the bumps, the top surface of the bumps becomes rough due to the etchant. The roughness of such bumps usually has roughness of several tens of micrometers to several hundred micrometers. Due to the roughness of these bumps, there is a problem that the accuracy of inspection decreases when inspecting an object to be inspected.

That is, referring to FIG. 3, when the electrode P of the display panel, which is the object to be inspected, and the bump 12 of the contact film contact each other, the contact area decreases due to the roughness of the bump 12, and the voltage drops. There is a problem that the resistance increases, and as a result, the measured value is not accurate. In addition, a gap between the electrode P and the bump 12 may cause a micro arc, which may cause a problem in that the contact portion burns out. In particular, in the case of the display panel as the object to be inspected, the roughness of the bumps is more problematic because the electrodes have a thin thickness of 100 mW to 1000 mW.

Patent Publication No. 10-2000-0060008

An object of the present invention is to provide a contact film and a method of manufacturing the same that can accurately inspect a test subject, such as an LCD panel. In addition, the technical problem of the present invention is to provide a bump of the contact film that can be in maximum contact with the electrode of the test subject. In addition, the technical problem of the present invention is to minimize the contact resistance between the electrode of the inspected object and the bump of the contact film.

An embodiment of the present invention provides a base layer including a plurality of via holes, a via hole filled with a conductor, a bump connected to the conductor and protruding from an upper surface of the base layer, and having a mirror-polished upper surface; And via hole connection wiring connected to the conductor exposed on the bottom surface of the layer.

It also includes a cover layer covering the bottom surface of the base layer and the via hole connection wiring.

In addition, the upper surface of the bump is characterized by having a roughness in the range of 1 kPa to 100 kPa by mirror polishing.

In addition, the embodiment of the present invention is a base layer including a plurality of via holes, via holes filled with conductors, bumps protruding from the upper surface of the base layer made of the same material as the conductors connected to the conductors, the conductors and bumps And a second bump formed on an upper surface of the bump and a via hole connecting wiring connected to a conductor exposed on the bottom surface of the base layer.

In addition, the conductors and the bumps may be formed of any one of nickel (Ni), cobalt (Co), nickel-cobalt (Ni-Co), copper (Cu), and alloys thereof. (Au), rhodium (Rh), palladium (Pd), platinum (Pt), ruthenium (Ru), and alloys thereof.

In another aspect, the present invention provides a process of forming a base layer, which is an insulator, and forming a plurality of via holes penetrating the base layer, and filling the via holes with a conductor, respectively, so that one end of the filled conductor is formed on the upper surface of the base layer. Exposing the other end of the conductor to the bottom surface of the base layer; forming a via hole connecting wiring connecting the other end of the conductor filled in the via hole to the bottom surface of the base layer; Covering the bottom surface and the via hole connection wiring with a cover layer, which is an insulator, and forming a bump having a top surface polished by protruding the other end of the conductor from the upper surface of the base layer.

The bump forming process may include polishing the upper surface of the base layer and one end of the conductor, forming an overcoating obtained by plating only one end of the conductor, and protruding one end of the conductor from the upper surface of the base layer. And forming a bump, and removing the overplating.

In addition, protruding from the upper surface of the base layer, the region of the base layer except for one end of the over-plated conductor is etched away, and half of the thickness of the base layer is etched away. In addition, the overcoating is plated with a copper (Cu) material.

In addition, the embodiment of the present invention is to provide a base layer which is an insulator and to form a plurality of via holes penetrating the base layer, and sequentially filled with a conductor and a secondary bump in the via holes, so that the filled secondary bump is filled with the base Exposing to the top surface of the layer and exposing the conductor to the bottom surface of the base layer; forming via hole connecting wiring connecting the conductor filled in the via hole to the bottom surface of the base layer; And covering the via hole connection wiring with a cover layer, which is an insulator, and protruding a part of the conductor and a second bump from an upper surface of the base layer.

In addition, the step of protruding a part of the conductor and the secondary bumps on the upper surface of the base layer, the process of polishing the upper surface of the base layer and one end of the secondary bumps, and the plating of only one end of the secondary bumps Forming a plating, protruding a portion of the conductor and one end of the secondary bumps from the upper surface of the base layer, and removing the overcoating.

According to embodiment of this invention, the surface of the bump of a contact film can be grind | polished and the contact area with the electrode of a test subject can be maximized. In addition, the voltage drop can be achieved by minimizing the contact resistance by maximizing the contact area with the object under test. This makes it possible to accurately test the subject under test.

1 is an overall configuration diagram of a probe unit for inspecting a conventional display panel.
2 is a perspective view illustrating an example of a contact film in a conventional probe unit.
3 is a diagram illustrating a state in which bumps having roughness are in contact with electrodes in the related art.
4 is a block diagram of a probe unit according to an exemplary embodiment of the present invention.
5 is a view showing a perspective view of a contact film according to an embodiment of the present invention.
6 is a view showing a cross-sectional view of the contact film according to the embodiment of the present invention in the Y direction.
7 is a view illustrating a state in which a bump polished according to an embodiment of the present invention contacts an electrode of an object to be inspected.
8 is a view illustrating a process of manufacturing a contact film according to an embodiment of the present invention.
9 is an enlarged photograph of an upper surface of a bump that has not been polished and an upper surface of a bump that has been polished according to an embodiment of the present invention.
10 is a diagram illustrating an example of a contact film in which secondary bumps are formed according to an embodiment of the present invention.
FIG. 11 is a view illustrating a process of manufacturing a contact film having secondary bumps according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Wherein like reference numerals refer to like elements throughout.

4 is a block diagram of a probe unit according to an exemplary embodiment of the present invention.

The probe unit 1 inspects an abnormality of each cell or the like in a test subject such as a display panel. That is, the probe unit 1 applies an electrical signal to the electrodes of the display panel and receives an output signal from the electrodes of the display panel. To this end, the probe unit 1 includes a PCB unit 300, a head block 200, and a contact film 100.

The PCB unit 300 generates an electrical signal for inspecting each cell of the object under test, such as a display panel, and provides the electrical signal to the contact film 100 of the present invention. That is, the PCB unit 300 generates a transmission signal for inspection of the object to be inspected and transmits the signal to the bump through the via hole connection wiring of the contact film 100, or, conversely, receives the received signal from the bump of the contact film 100. .

The head block 200 moves the contact film up and down or fixes it at a predetermined position so that the bumps of the contact film 100 come into contact with the electrodes of the display panel at an appropriate physical pressure. If the contact film is mounted in a separate block housing, the head block moves the block housing up, down, left and right so that bumps of the contact film may contact the electrodes of the display panel.

The contact film mounted on the head block 200 has bumps in contact with the electrodes of the display panel. Embodiments of the present invention remove the roughness of the upper surfaces by polishing the upper surfaces of the bumps.

5 is a view showing a perspective view of a contact film according to an embodiment of the present invention, Figure 6 is a view showing a cross-sectional view of the contact film according to an embodiment of the present invention in the Y direction, Figure 7 is a view of the present invention According to the exemplary embodiment, the bump polished according to the embodiment is in contact with the electrode of the object under test.

In the following description, the layer structure of the contact film will be described as two layers, a base layer and a cover layer, but the polished bumps of the present invention may also be applied to more composite layer structures. In the following description, bumps formed in via holes penetrating a single layer will be described as examples, but bumps formed in via holes penetrating a plurality of layers in addition to a single layer may correspond to polished bumps.

The contact film 100 includes a base layer 110 and a cover layer 120 which are insulators.

The base layer 110 and the cover layer 120 may be any material that is a base for manufacturing a contact film such as polyimide or silicon. For example, a polymer polymer flexible film which is one of polyethylene terephathalate (PET), liquid crystal polymer (LCP), and polyimide (PI) may be applied.

Each of the base layer 110 and the cover layer 120 has a horizontal length in the X direction and a vertical length in the Y direction, and has an area XY area multiplied by X and Y. Also, considering the Z direction of the thickness of the composite layer, the composite layer has an XYZ volume. Hereinafter, the X direction, the Y direction, and the Z direction will be described using examples of directions perpendicular to each other.

A plurality of via holes B may be formed through the base layer 110, and a conductor 131 may be filled in the via holes B. Although the via hole B is illustrated in a circular shape, the via hole B may be embodied as various types of holes, such as a quadrangle and a rhombus, and the shape of the via hole B is not limited. The via holes B are arranged in a row in a plurality in the Y direction, and a plurality of bump groups existing on different lines in the Y direction may be spaced apart from each other.

Meanwhile, the conductors 131 and the protruding bumps 132 filled in the via holes B are nickel, nickel, cobalt, and nickel-cobalt having the same material as those having good electrical conductivity and stiffness and wear resistance. -Co) and copper (Cu) is preferably implemented in any one material. In addition, since the conductor 131 is formed by filling the via hole B, the conductor 131 may be precisely formed with an elongated shape. In addition, the conductor 131 is in close contact with the contact surface inside the via hole B, and thus has the same height as the inner shape of the via hole B, and a sufficient bonding force and supporting force are ensured, and the conductor 131 is formed on the base layer by the pressure applied to the bump. It is possible to prevent the departure or collapse from the 110.

The conductor 131 filling the via hole has one end and the other end, and one end of the conductor 131 is an end exposed from the top surface of the base layer 110, and the other end of the conductor 131 is exposed to the bottom surface of the base layer. Says sweet dan. Exposed here does not mean that the conductor is actually exposed to the outside after the completion of the product manufacturing, it means that the exposed through the base layer 110 from the top and bottom of the base layer.

The bump 132 is connected to the conductor 131 and protrudes from the upper surface of the base layer 131, and the upper surface of the protruding bump is mirror polished. That is, the bump 132 is formed by extending one end of the conductor 131 filling the via hole B from the top surface of the base layer 110. Therefore, the bump 132 may be referred to as a part of the conductor 131 filled in the via hole (B). The bump 132 protruding from the upper surface of the base layer 110 is in direct contact with an electrode of a display panel, which is an object under test, and transmits a transmission signal received from the PCB to the via hole connection wiring 140 and the conductor 131. After passing through to the electrode of the display panel. In addition, the bump may receive a signal from the electrode of the display panel and transmit the signal through the conductor 131 and the via hole connection wiring 140 in order to be transferred to the external PCB. The bump 132 may be formed of the same material as the conductor 131 as part of the conductor. Alternatively, in another embodiment, when bumps are formed in addition to a conductor, a metal having a different conductivity from that of the conductor 131 may be used.

The via hole connection wiring 140 electrically connects the other end of the conductor exposed to the bottom surface of the base layer 110 and the external PCB. The via hole connecting line 140 connects each conductor of the via holes located in the same line in the Y direction to each other, that is, the other end of each conductor of the via holes B in which the bumps 132 which are group members belonging to the same bump group G are formed. Are connected to each other on the bottom surface of the base layer (110). Accordingly, since the via hole connection wiring 140 is positioned on the bottom surface of the base layer, the via hole connection wiring 140 is embedded in the cover layer 120 stacked below the base layer 110. The via hole connection wiring 160 may be made of the same material as the bump and the conductor or may be made of a metal having a different conductivity.

The upper surface 132a of the bump has a state in which roughness is removed by polishing. Therefore, as shown in FIG. 7, the upper surface 132a of the bump 132 may have a flat state such that the roughness is completely removed or has a small roughness within a range of 1 mm to 100 mm, and thus, the electrode P of the object to be inspected. The contact area with can be maximized. Accordingly, the voltage drop may be prevented by reducing the resistance between the electrode P of the object under test and the bump 132 of the contact film. Therefore, by inspecting the object by polishing the bumps without roughness by contacting the electrodes, accurate inspection measurement can be made.

Meanwhile, the top surface 132a of the bump may be polished in various ways, and a bright polishing method may be used. Mirror polishing refers to forming a surface of a material as a smooth, non-directional, high mirror reflective smooth surface, and includes a mechanical polishing method and a chemical polishing method. Therefore, by making the upper surface G which is the upper surface of the bump 132 into the mirror surface by which the roughness was removed by mirror polishing, it can be set as a thin and favorable reflectivity surface.

8 is a view illustrating a process of manufacturing a contact film according to an embodiment of the present invention.

In the following description, a process of forming a via hole connecting wiring by forming one via hole will be described. However, a process of forming a plurality of via holes and forming a plurality of via hole connecting wirings connecting them will also be performed.

First, as shown in Fig. 8A, a base layer 110 that is an insulator is provided. The material of the base layer, which is an insulator, may be any material that is a base for manufacturing a contact film such as polyimide or silicon.

Thereafter, as illustrated in FIG. 8B, via holes B penetrating both surfaces of the base layer 110 are formed. The via hole B may be formed by first applying and developing a photoresist on the base layer to form a via hole pattern in the photoresist. Then, the base layer is plasma-etched to form a via hole having the same cross-section as the via hole pattern generated in the photoresist. The base layer is created and the remaining photoresist is removed. In addition, other methods may be applied to the generation of the via holes. Via holes may be formed by etching the base layer itself without photoresist patterning.

The conductor 131 is filled in the via hole B, as shown in FIG. 8C. Accordingly, one end 131a of the filled conductor 131 is exposed to the top surface of the base layer 110, and the other end 131b of the conductor 131 is exposed to the bottom surface of the base layer. The conductor 131 may be made of any one of nickel-cobalt (Ni-Co), nickel (Ni), copper (Cu), and alloys thereof having good electrical conductivity and stiffness and wear resistance. In addition, other conductive materials may be used.

After filling the via hole with the conductor 131, as shown in FIG. 8 (d), the via hole connecting wire 140 connecting the other end 131 of the conductor in the via hole B is connected to the bottom surface of the base layer 110. It has a process of forming via hole connecting wirings formed in the process. The process of forming the via hole connection wirings may be formed in various ways although not shown in the detailed step drawings. For example, the bottom surface of the base layer 110 having a via hole filled with a conductor is coated with a conductive material, and a photoresist is applied to the bottom surface coated with the conductive material. The photoresist is masked to pattern the via hole connection wiring region and the via hole region to connect the via holes. Thereafter, the via hole connecting wiring having conductivity can be formed on the bottom surface of the base layer by leaving the via hole connecting wiring region and the via hole region and removing the remaining conductive material.

After the via hole connecting wiring is formed, a cover layer forming process is performed to cover the bottom surface of the base layer 110 and the via hole connecting wiring with the cover layer 120 which is an insulator, as shown in FIG. The material of the cover layer 120 may be any material that is a base for manufacturing a contact film such as polyimide or silicon. For example, a polymer polymer flexible film which is one of polyethylene terephathalate (PET), liquid crystal polymer (LCP), and polyimide (PI) may be applied. In addition, the cover layer 120 may be formed by applying and drying the bottom surface of the base layer, not in the form of a film. A liquid photosensitive polymer or a liquid non-photosensitive polymer such as PBO (piperonyl butoxide) and siloxane may be formed on the bottom surface of the base layer and dried.

After the cover layer 120 is formed on the bottom surface of the base layer 110, a bump forming process of forming a bump having an upper surface polished by protruding one end 131a from the upper surface of the base layer is performed. A conductor is formed on the top surface of the base layer 110 to form bumps. The top surface of the bumps is polished to have a roughness. By having the upper surface removed from the roughness, contact between the upper surfaces of the bumps in contact with the electrodes of the display panel as the object to be inspected can be completely made to maximize the contact area.

As a method of polishing, a bump may be formed by protruding a conductor from the base layer 110 first, and then the upper surface of the protruding bump may be polished. However, there is a process difficulty because only the upper surface of the bump must be partially polished in the entire base layer area. In addition, when mechanically polishing the upper surface of the bump after protruding a conductor from the base layer to form a bump, other regions of the upper surface of the base layer on which no via holes are formed may also undergo a polishing process, which may damage other regions. .

In order to solve this problem, an embodiment of the present invention is to polish the entire upper surface of the base layer and one end of the conductor together before protruding the conductor from the base layer, and then polish the conductor to protrude the conductor to form a bump. do. By forming the bumps after polishing the entire upper surface of the base layer, the inconvenience of partial polishing can be eliminated and the damage to the upper surface of the base layer can be prevented.

The bump forming process of forming the bump after polishing will be described in detail with reference to FIGS. 8 (f) to 8 (i).

In detail, after the cover layer 120 is formed on the bottom surface of the base layer 110, as shown in FIG. 8F, the entire upper surface of the base layer 110 may be polished. At this time, since the entire upper surface of the base layer 110 is polished, one end 131a of the conductor filled in the via hole of the base layer and exposed on the upper surface is also polished simultaneously with the upper surface of the base layer. Due to the polishing of the entire upper surface of the base layer 131, one end 131a of the conductor 131 is also polished to remove the roughness of the surface of one end of the conductor. One end of the conductor thus polished corresponds to the upper surface of the bump later.

In the above polishing, various methods may be applied, and a bright polishing method may be used. Mirror polishing refers to forming a surface of a material as a smooth, non-directional, high mirror reflective smooth surface, and includes a mechanical polishing method and a chemical polishing method. Therefore, by making the upper surface of the bump into a mirror surface whose roughness has been removed by mirror polishing, a thin and good reflectance surface can be obtained.

After polishing of the entire upper surface of the base layer, as shown in FIG. 8 (g), only one end 131a of the conductor filled in the via hole is plated to coat the one end 131a of the conductor. To form. Overplating acts as a protective layer. This has one end 131a of the polished conductor having a mirror surface from which roughness is removed, and the overcoating 150 may protect one end of the conductor having such a mirror shape. The overcoat 150 is plated using a metal component such as copper (Cu) to serve as a protective layer.

After the over-plating is formed, a part of the conductor 131 is protruded from the upper surface of the base layer 110 as shown in FIG. 8 (h) to form a bump 132.

That is, in the formation of the conductive bumps protruding from the conductors of the via holes, the bumps 132 may be formed by etching the base layer 110 except the conductors to a predetermined depth. The etching depth etches a half (1/2) of the thickness of the base layer 110 in the total thickness in the Z direction, so that the conductor 131 protrudes from the base layer 110 to function as the bump 132. .

After the bumps 132 are formed to protrude, the overcoat 150 formed on the upper surface of the bumps is removed as shown in FIG. 8 (i). By removing the overcoat 150, the upper surface of the bump has a mirror surface with roughness removed, so that an accurate measurement can be made by maximizing a contact area with the electrode of the object under test.

9 is an enlarged photograph of an upper surface of a bump that has not been polished and an upper surface of a bump that has been polished according to an embodiment of the present invention. As shown in Figure 9 (a) is a photograph showing the upper surface of the bump that has not been polished, Figure 9 (b) is a photograph showing a state having a flat surface is roughened by polishing the upper surface of the bump.

Meanwhile, in the conventional probe unit as shown in FIG. 2, the bumps are made of the same material as the conductor, and among nickel (Ni), cobalt (Co), nickel-cobalt (Ni-Co), copper (Cu), and alloys thereof. It is implemented with either material. However, in the case of a bump having such a material, accurate measurement cannot be made due to the contact resistance of the roughened surface. In order to improve this, the bump surface was mirror polished as shown in FIG. 8 (f).

However, another embodiment of the present invention may be implemented to reduce contact resistance by adding a secondary bump made of a material having better conductivity to the upper surface of the bump without mirror polishing. That is, as shown in FIG. 10, the contact resistance may be reduced by adding the secondary bumps 160 having higher conductivity to the upper surface of the protruding bumps 132. The conductive secondary bumps 160 that are different from the materials of the conductors 131 and the bumps 132 may be added to conduct conductivity. For example, the conductor 131 and the bump 132 may be formed of any one of nickel (Ni), cobalt (Co), nickel-cobalt (Ni-Co), copper (Cu), and alloys thereof. The secondary bumps 160 may be formed of any one of gold (Au), rhodium (Rh), palladium (Pd), platinum (Pt), ruthenium (Ru), and alloys thereof to reduce contact resistance. have.

FIG. 11 is a view illustrating a process of manufacturing a contact film having secondary bumps according to an embodiment of the present invention.

First, as shown in Fig. 11A, a base layer 110 that is an insulator is provided. The material of the base layer, which is an insulator, may be any material that is a base for manufacturing a contact film such as polyimide or silicon.

Thereafter, as shown in FIG. 11B, a via hole B penetrating both surfaces of the base layer 110 is formed. The via hole B may be formed by first applying and developing a photoresist on the base layer to form a via hole pattern in the photoresist. Then, the base layer is plasma-etched to form a via hole having the same cross-section as the via hole pattern generated in the photoresist. It is created in the base layer and the remaining photoresist is removed. In addition, other methods may be applied to the generation of the via holes. Via holes may be formed by etching the base layer itself without photoresist patterning.

Inside the via hole B, as illustrated in FIG. 11C, the conductor 131 and the secondary bumps 160 are sequentially filled. After filling the conductor 131 to a predetermined height of the via hole B, the second bump 160 is filled in the remaining via hole space to sequentially fill the entire via hole B. Accordingly, one end 160a of the filled secondary bumps 160 is exposed to the top surface of the base layer 110, and the other end 131b of the conductor 131 is exposed to the bottom surface of the base layer. The conductor 131 may be made of any one of nickel-cobalt (Ni-Co), nickel (Ni), copper (Cu), and alloys thereof having good electrical conductivity and stiffness and wear resistance. In addition, other conductive materials may be used. In addition, the secondary bumps 160 may be formed of any one material of gold (Au), rhodium (Rh), palladium (Pd), platinum (Pt), ruthenium (Ru), and alloys thereof.

After the via hole is sequentially filled with the conductor 131 and the secondary bumps 160, the via hole connecting wiring 140 connecting the other end 131 of the conductor in the via hole B is shown in FIG. 11 (d). The via hole connecting wiring is formed on the bottom surface of the base layer 110. The process of forming the via hole connection wirings may be formed in various ways although not shown in the detailed step drawings.

After the via hole connection wiring is formed, as shown in FIG. 11E, the bottom layer of the base layer 110 and the via hole connection wiring are covered with the cover layer 120 which is an insulator. The material of the cover layer 120 may be any material that is a base for manufacturing a contact film such as polyimide or silicon.

After the cover layer 120 is formed on the bottom surface of the base layer 110, as illustrated in FIG. 11F, a part of the conductor 131 is protruded from the top surface of the base layer to form the bump 132. And, it has a process of protruding the secondary bumps 160 from the upper surface of the base layer.

The formation of the conductive bumps and the secondary bumps protruding from the base layer 110 may be performed by etching the base layer 110 except the conductors 131 and the secondary bumps 160 to a predetermined depth, thereby forming the bumps 132 and the second bumps. The bumps 160 may protrude. The etching depth etches a half (1/2) of the thickness of the base layer 110 in the total thickness in the Z direction, whereby the conductor 131 and the secondary bumps 160 protrude from the base layer 110 to bump 132. ) And secondary bumps 160.

In the embodiment of the present invention, the bump 132 and the secondary bumps 160 are protruded from the base layer 110. However, only the portions of the secondary bumps 160 or the secondary bumps 160 are needed as needed. It is also possible to protrude from the base layer (110).

In addition, the contact resistance may be further reduced by adding a mirror polishing process to the upper surface of the secondary bumps 160 in the embodiment of the present invention. To this end, the process of protruding the bumps 132 and the secondary bumps 160, which are part of the conductor 131, to the upper surface of the base layer 110, as shown in FIG. 11 (f), is the upper surface and the secondary of the base layer 110. Grinding one end of the bump, forming an overcoated plated with only one end of the secondary bump, protruding part of the conductor and one end of the secondary bump from the upper surface of the base layer, and removing the overplating To have a process. Since this embodiment described above is the same as the mirror polishing process of the bump 132 of FIG. 8, a detailed description thereof will be omitted.

Although the present invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the present invention is not limited thereto but is limited by the following claims. Accordingly, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit of the following claims.

100: contact film 110: base layer
120: cover layer 131: conductor
132: bump 140: via hole connecting wiring

Claims (16)

delete delete delete A base layer including a plurality of via holes;
Via holes filled with conductors;
A bump connected to the conductor and made of the same material as the conductor to protrude from an upper surface of the base layer;
A secondary bump made of a material different from the conductor and the bump and provided on an upper surface of the bump;
A via hole connecting wiring connected to the conductor exposed on the bottom surface of the base layer;
Contact film comprising a. The material of claim 4, wherein the conductor and the bump are made of one of nickel (Ni), cobalt (Co), nickel-cobalt (Ni-Co), copper (Cu), and alloys thereof. The secondary bumps are contact films made of any one of gold (Au), rhodium (Rh), palladium (Pd), platinum (Pt), ruthenium (Ru), and alloys thereof. The contact film of claim 5, wherein the secondary bumps have a mirror polished top surface. The contact film according to claim 6, wherein the upper surface of the secondary bumps has a roughness in the range of 1 Pa to 100 Pa by mirror polishing. A probe unit to which the contact film according to any one of claims 4 to 7 is mounted to inspect an abnormality of an object under test. The contact film of any one of Claims 4-7;
A head block for moving the contact film up and down or fixing it at a predetermined position such that the bump of the contact film contacts the electrode of the object under test;
A PCB unit generating a transmission signal for inspecting an object to be inspected and transmitting the signal to the bump of the contact film or receiving a received signal from the bump of the contact film;
Probe unit comprising a. Providing a base layer that is an insulator and forming a plurality of via holes penetrating the base layer;
Filling each of the via holes with a conductor so that one end of the filled conductor is exposed to the top surface of the base layer and the other end of the conductor is exposed to the bottom surface of the base layer;
Forming a via hole connecting wiring connecting the other end of the conductor filled in the via hole on the bottom surface of the base layer;
Covering the bottom surface of the base layer and the via hole connection wiring with a cover layer which is an insulator;
A bump forming process of forming a bump by protruding the other end of the conductor from an upper surface of the base layer, and forming a bump having a polished upper surface;
To include, the bump forming process,
Polishing an upper surface of the base layer and one end of the conductor;
Forming an overcoating obtained by plating only one end of the conductor;
Protruding one end of the conductor from an upper surface of the base layer to form a bump;
Removing the overcoat;
Method for producing a contact film comprising a. delete The method of claim 10, wherein protruding from the upper surface of the base layer,
And removing an area of the base layer except one end of the over-plated conductor by etching and removing half of the thickness of the base layer by etching. The method of claim 12, wherein the overcoat is plated with a copper (Cu) material. The method according to any one of claims 10, 12, 13, wherein the polishing is mirror polishing. Providing a base layer that is an insulator and forming a plurality of via holes penetrating the base layer;
Filling the via hole sequentially with a conductor and a secondary bump so that the filled secondary bump is exposed to the top surface of the base layer and the conductor is exposed to the bottom surface of the base layer;
Forming a via hole connecting wiring connecting the conductor filled in the via hole on the bottom surface of the base layer;
Covering the bottom surface of the base layer and the via hole connection wiring with a cover layer which is an insulator;
Protruding a portion of the conductor and the secondary bumps from the upper surface of the base layer;
Method for producing a contact film comprising a. The process of claim 15, wherein the protruding part of the conductor and the secondary bumps on the upper surface of the base layer is performed.
Polishing an upper surface of the base layer and one end of the secondary bumps;
Forming an overcoating obtained by plating only one end of the secondary bumps;
Protruding a portion of the conductor and one end of the secondary bump from the top surface of the base layer;
Removing the overcoat;
Method for producing a contact film comprising a.

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