KR101240279B1 - 마스크블랭크용 기판, 마스크블랭크 및 포토마스크 그리고 그것들의 제조방법 - Google Patents

마스크블랭크용 기판, 마스크블랭크 및 포토마스크 그리고 그것들의 제조방법 Download PDF

Info

Publication number
KR101240279B1
KR101240279B1 KR1020090072454A KR20090072454A KR101240279B1 KR 101240279 B1 KR101240279 B1 KR 101240279B1 KR 1020090072454 A KR1020090072454 A KR 1020090072454A KR 20090072454 A KR20090072454 A KR 20090072454A KR 101240279 B1 KR101240279 B1 KR 101240279B1
Authority
KR
South Korea
Prior art keywords
substrate
main surface
mask blank
photomask
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020090072454A
Other languages
English (en)
Korean (ko)
Other versions
KR20100019373A (ko
Inventor
타나베 마사루
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20100019373A publication Critical patent/KR20100019373A/ko
Application granted granted Critical
Publication of KR101240279B1 publication Critical patent/KR101240279B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020090072454A 2008-08-07 2009-08-06 마스크블랭크용 기판, 마스크블랭크 및 포토마스크 그리고 그것들의 제조방법 Active KR101240279B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-204164 2008-08-07
JP2008204164A JP5222660B2 (ja) 2008-08-07 2008-08-07 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110049063A Division KR20110074835A (ko) 2008-08-07 2011-05-24 마스크블랭크용 기판, 마스크블랭크, 포토마스크 및 반도체 디바이스 그리고 그것들의 제조방법

Publications (2)

Publication Number Publication Date
KR20100019373A KR20100019373A (ko) 2010-02-18
KR101240279B1 true KR101240279B1 (ko) 2013-03-07

Family

ID=41653203

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020090072454A Active KR101240279B1 (ko) 2008-08-07 2009-08-06 마스크블랭크용 기판, 마스크블랭크 및 포토마스크 그리고 그것들의 제조방법
KR1020110049063A Ceased KR20110074835A (ko) 2008-08-07 2011-05-24 마스크블랭크용 기판, 마스크블랭크, 포토마스크 및 반도체 디바이스 그리고 그것들의 제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020110049063A Ceased KR20110074835A (ko) 2008-08-07 2011-05-24 마스크블랭크용 기판, 마스크블랭크, 포토마스크 및 반도체 디바이스 그리고 그것들의 제조방법

Country Status (5)

Country Link
US (2) US8048593B2 (enExample)
JP (1) JP5222660B2 (enExample)
KR (2) KR101240279B1 (enExample)
DE (1) DE102009036618B4 (enExample)
TW (2) TWI461840B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5222660B2 (ja) * 2008-08-07 2013-06-26 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法
JP4971278B2 (ja) * 2008-09-25 2012-07-11 信越化学工業株式会社 フォトマスクブランクスの選択方法及び製造方法並びにフォトマスクの製造方法
JP5231918B2 (ja) 2008-09-26 2013-07-10 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、及び両面研磨装置
JP5335351B2 (ja) * 2008-10-01 2013-11-06 Ｈｏｙａ株式会社 マスクブランク用基板セット、マスクブランクセット、フォトマスクセット、及び半導体デバイスの製造方法
SG184104A1 (en) * 2010-03-16 2012-10-30 Asahi Glass Co Ltd Optical member base material for euv lithography, and method for producing same
JP5637062B2 (ja) * 2010-05-24 2014-12-10 信越化学工業株式会社 合成石英ガラス基板及びその製造方法
CN101923292B (zh) * 2010-08-03 2012-10-17 深圳市路维电子有限公司 光罩边缘铬残留去除方法
JP5858623B2 (ja) * 2011-02-10 2016-02-10 信越化学工業株式会社 金型用基板
JP5823339B2 (ja) * 2011-04-12 2015-11-25 Hoya株式会社 フォトマスク用基板、フォトマスク及びパターン転写方法
JP6055732B2 (ja) * 2013-07-26 2016-12-27 Hoya株式会社 マスクブランク用基板、マスクブランク、およびそれらの製造方法、並びにインプリントモールドの製造方法
JP5658331B2 (ja) * 2013-07-31 2015-01-21 Hoya株式会社 マスクブランク用基板セットの製造方法、マスクブランクセットの製造方法、フォトマスクセットの製造方法、及び半導体デバイスの製造方法
US9798050B2 (en) * 2013-09-27 2017-10-24 Hoya Corporation Substrate with multilayer reflective film, mask blank, transfer mask and method of manufacturing semiconductor device
JP6094708B1 (ja) * 2015-09-28 2017-03-15 旭硝子株式会社 マスクブランク
US10948814B2 (en) * 2016-03-23 2021-03-16 AGC Inc. Substrate for use as mask blank, and mask blank
CN109313385A (zh) * 2016-06-28 2019-02-05 三井化学株式会社 防护膜、防护膜组件框体、防护膜组件及其制造方法
CN109463000B (zh) 2016-07-27 2022-03-29 Hoya株式会社 掩模坯料用基板、掩模坯料、转印用掩模以及它们的制造方法、半导体器件的制造方法
JP6862859B2 (ja) * 2017-01-30 2021-04-21 Ａｇｃ株式会社 マスクブランク用のガラス基板、マスクブランクおよびフォトマスク

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050012687A (ko) * 2003-07-25 2005-02-02 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크 블랭크용 기판의 선정방법
KR20050109984A (ko) * 2003-03-20 2005-11-22 호야 가부시키가이샤 레티클용 기판 및 그 제조방법과, 마스크 블랭크 및 그제조방법
KR20060051685A (ko) * 2004-09-29 2006-05-19 호야 가부시키가이샤 마스크 블랭크용 기판, 마스크 블랭크, 노광용 마스크,마스크 블랭크용 기판의 제조방법 및 반도체 제조방법
KR20060094888A (ko) * 2005-02-25 2006-08-30 호야 가부시키가이샤 마스크 블랭크용 투명 기판의 제조방법, 마스크 블랭크의제조방법, 및 노광용 마스크의 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3377006B2 (ja) * 1992-02-28 2003-02-17 Ｈｏｙａ株式会社 フォトマスクブランクの検査方法、フォトマスクの製造方法、フォトマスクブランク及びフォトマスクブランク用ガラス基板
AU4291099A (en) * 1998-09-30 2000-04-17 Nikon Corporation Photomask and exposure method
JP3572053B2 (ja) * 2001-05-31 2004-09-29 株式会社東芝 露光マスクの製造方法、マスク基板情報生成方法、半導体装置の製造方法およびサーバー
EP1617287A4 (en) * 2003-03-28 2010-01-27 Hoya Corp METHOD FOR PRODUCING A MASK ROLL
JP4340859B2 (ja) * 2003-07-25 2009-10-07 信越化学工業株式会社 フォトマスクブランク用基板の選定方法
TWI329779B (en) * 2003-07-25 2010-09-01 Shinetsu Chemical Co Photomask blank substrate, photomask blank and photomask
JP4761901B2 (ja) * 2004-09-22 2011-08-31 Ｈｏｙａ株式会社 マスクブランクス用基板の製造方法、マスクブランクスの製造方法、露光用マスクの製造方法、反射型マスクの製造方法及び半導体装置の製造方法
JP4803576B2 (ja) * 2004-09-29 2011-10-26 Ｈｏｙａ株式会社 マスクブランク用基板、マスクブランク、露光用マスク、半導体デバイスの製造方法、及びマスクブランク用基板の製造方法
JP4683416B2 (ja) * 2005-06-10 2011-05-18 Ｈｏｙａ株式会社 マスクブランク用ガラス基板の欠陥検査方法、マスクブランク用ガラス基板、マスクブランク、露光用マスク、マスクブランク用ガラス基板の製造方法、マスクブランクの製造方法、及び露光用マスクの製造方法
JP2008204164A (ja) 2007-02-20 2008-09-04 Mitsubishi Electric Corp 侵入検知装置
JP5222660B2 (ja) * 2008-08-07 2013-06-26 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法
JP5335351B2 (ja) * 2008-10-01 2013-11-06 Ｈｏｙａ株式会社 マスクブランク用基板セット、マスクブランクセット、フォトマスクセット、及び半導体デバイスの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050109984A (ko) * 2003-03-20 2005-11-22 호야 가부시키가이샤 레티클용 기판 및 그 제조방법과, 마스크 블랭크 및 그제조방법
KR20050012687A (ko) * 2003-07-25 2005-02-02 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크 블랭크용 기판의 선정방법
KR20060051685A (ko) * 2004-09-29 2006-05-19 호야 가부시키가이샤 마스크 블랭크용 기판, 마스크 블랭크, 노광용 마스크,마스크 블랭크용 기판의 제조방법 및 반도체 제조방법
KR20060094888A (ko) * 2005-02-25 2006-08-30 호야 가부시키가이샤 마스크 블랭크용 투명 기판의 제조방법, 마스크 블랭크의제조방법, 및 노광용 마스크의 제조방법

Also Published As

Publication number Publication date
US20100035028A1 (en) 2010-02-11
US20120015286A1 (en) 2012-01-19
KR20110074835A (ko) 2011-07-04
JP2010039352A (ja) 2010-02-18
JP5222660B2 (ja) 2013-06-26
US8440373B2 (en) 2013-05-14
KR20100019373A (ko) 2010-02-18
US8048593B2 (en) 2011-11-01
TWI461840B (zh) 2014-11-21
TWI402615B (zh) 2013-07-21
DE102009036618B4 (de) 2016-08-04
TW201341946A (zh) 2013-10-16
DE102009036618A1 (de) 2010-03-25
TW201007349A (en) 2010-02-16

Similar Documents

Publication Publication Date Title
KR101240279B1 (ko) 마스크블랭크용 기판, 마스크블랭크 및 포토마스크 그리고 그것들의 제조방법
KR101161349B1 (ko) 포토마스크 세트 및 반도체 디바이스의 제조방법
JP5073835B2 (ja) マスクブランク用基板
JP5714672B2 (ja) マスクブランク用基板、マスクブランク、露光用マスク、半導体デバイスの製造方法、及びマスクブランク用基板の製造方法
JP4728414B2 (ja) マスクブランク用基板、マスクブランク、フォトマスクおよび半導体デバイスの製造方法
JP4803576B2 (ja) マスクブランク用基板、マスクブランク、露光用マスク、半導体デバイスの製造方法、及びマスクブランク用基板の製造方法
JP4819191B2 (ja) マスクブランク用基板、マスクブランク、フォトマスクおよび半導体デバイスの製造方法
JP5323966B2 (ja) マスクブランク用基板、マスクブランク、フォトマスク及び半導体デバイスの製造方法
JP5658331B2 (ja) マスクブランク用基板セットの製造方法、マスクブランクセットの製造方法、フォトマスクセットの製造方法、及び半導体デバイスの製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20090806

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20110331

Patent event code: PE09021S01D

A107 Divisional application of patent
AMND Amendment
PA0107 Divisional application

Comment text: Divisional Application of Patent

Patent event date: 20110524

Patent event code: PA01071R01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20120924

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20111129

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

Patent event date: 20110331

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20120924

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20120524

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20110524

Comment text: Amendment to Specification, etc.

PX0701 Decision of registration after re-examination

Patent event date: 20130118

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20121221

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20120924

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20120524

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20110524

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20130228

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20130304

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20160127

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20160127

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20170202

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20170202

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20180220

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20180220

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20190219

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20190219

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20240117

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20250108

Start annual number: 13

End annual number: 13