TWI461840B - 光罩基底用基板、光罩基底與光罩及其等之製造方法 - Google Patents
光罩基底用基板、光罩基底與光罩及其等之製造方法 Download PDFInfo
- Publication number
- TWI461840B TWI461840B TW102122421A TW102122421A TWI461840B TW I461840 B TWI461840 B TW I461840B TW 102122421 A TW102122421 A TW 102122421A TW 102122421 A TW102122421 A TW 102122421A TW I461840 B TWI461840 B TW I461840B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- main surface
- reticle
- virtual reference
- film
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 319
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000012546 transfer Methods 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 17
- 238000000227 grinding Methods 0.000 claims description 15
- 239000011651 chromium Substances 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 3
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 claims description 2
- ZGHDMISTQPRNRG-UHFFFAOYSA-N dimolybdenum Chemical compound [Mo]#[Mo] ZGHDMISTQPRNRG-UHFFFAOYSA-N 0.000 claims description 2
- 238000005498 polishing Methods 0.000 description 64
- 239000011521 glass Substances 0.000 description 55
- 239000007789 gas Substances 0.000 description 30
- 238000012545 processing Methods 0.000 description 25
- 238000004544 sputter deposition Methods 0.000 description 13
- 239000002245 particle Substances 0.000 description 9
- 238000003672 processing method Methods 0.000 description 9
- 238000005477 sputtering target Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000010363 phase shift Effects 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 238000012795 verification Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 239000011553 magnetic fluid Substances 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 229910000420 cerium oxide Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910016006 MoSi Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 230000036555 skin type Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 208000032544 Cicatrix Diseases 0.000 description 1
- 240000004282 Grewia occidentalis Species 0.000 description 1
- 101100485303 Magnaporthe oryzae (strain 70-15 / ATCC MYA-4617 / FGSC 8958) XYR1 gene Proteins 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 230000037387 scars Effects 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008204164A JP5222660B2 (ja) | 2008-08-07 | 2008-08-07 | マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201341946A TW201341946A (zh) | 2013-10-16 |
| TWI461840B true TWI461840B (zh) | 2014-11-21 |
Family
ID=41653203
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102122421A TWI461840B (zh) | 2008-08-07 | 2009-08-06 | 光罩基底用基板、光罩基底與光罩及其等之製造方法 |
| TW098126855A TWI402615B (zh) | 2008-08-07 | 2009-08-06 | 光罩基底用基板、光罩基底與光罩及其等之製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098126855A TWI402615B (zh) | 2008-08-07 | 2009-08-06 | 光罩基底用基板、光罩基底與光罩及其等之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8048593B2 (enExample) |
| JP (1) | JP5222660B2 (enExample) |
| KR (2) | KR101240279B1 (enExample) |
| DE (1) | DE102009036618B4 (enExample) |
| TW (2) | TWI461840B (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5222660B2 (ja) * | 2008-08-07 | 2013-06-26 | Hoya株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法 |
| JP4971278B2 (ja) * | 2008-09-25 | 2012-07-11 | 信越化学工業株式会社 | フォトマスクブランクスの選択方法及び製造方法並びにフォトマスクの製造方法 |
| JP5231918B2 (ja) | 2008-09-26 | 2013-07-10 | Hoya株式会社 | マスクブランク用基板の製造方法、及び両面研磨装置 |
| JP5335351B2 (ja) * | 2008-10-01 | 2013-11-06 | Hoya株式会社 | マスクブランク用基板セット、マスクブランクセット、フォトマスクセット、及び半導体デバイスの製造方法 |
| WO2011115131A1 (ja) * | 2010-03-16 | 2011-09-22 | 旭硝子株式会社 | Euvリソグラフィ光学部材用基材およびその製造方法 |
| JP5637062B2 (ja) * | 2010-05-24 | 2014-12-10 | 信越化学工業株式会社 | 合成石英ガラス基板及びその製造方法 |
| CN101923292B (zh) * | 2010-08-03 | 2012-10-17 | 深圳市路维电子有限公司 | 光罩边缘铬残留去除方法 |
| JP5858623B2 (ja) * | 2011-02-10 | 2016-02-10 | 信越化学工業株式会社 | 金型用基板 |
| JP5823339B2 (ja) * | 2011-04-12 | 2015-11-25 | Hoya株式会社 | フォトマスク用基板、フォトマスク及びパターン転写方法 |
| JP6055732B2 (ja) * | 2013-07-26 | 2016-12-27 | Hoya株式会社 | マスクブランク用基板、マスクブランク、およびそれらの製造方法、並びにインプリントモールドの製造方法 |
| JP5658331B2 (ja) * | 2013-07-31 | 2015-01-21 | Hoya株式会社 | マスクブランク用基板セットの製造方法、マスクブランクセットの製造方法、フォトマスクセットの製造方法、及び半導体デバイスの製造方法 |
| KR102253519B1 (ko) * | 2013-09-27 | 2021-05-18 | 호야 가부시키가이샤 | 다층 반사막 부착 기판, 마스크 블랭크, 전사용 마스크 및 반도체 장치의 제조방법 |
| JP6094708B1 (ja) * | 2015-09-28 | 2017-03-15 | 旭硝子株式会社 | マスクブランク |
| US10948814B2 (en) * | 2016-03-23 | 2021-03-16 | AGC Inc. | Substrate for use as mask blank, and mask blank |
| CN109313385A (zh) * | 2016-06-28 | 2019-02-05 | 三井化学株式会社 | 防护膜、防护膜组件框体、防护膜组件及其制造方法 |
| US10983427B2 (en) | 2016-07-27 | 2021-04-20 | Hoya Corporation | Method for manufacturing a mask blank substrate, method for manufacturing a mask blank, method for manufacturing a transfer mask, method for manufacturing a semiconductor device, a mask blank substrate, a mask blank, and a transfer mask |
| JP6862859B2 (ja) * | 2017-01-30 | 2021-04-21 | Agc株式会社 | マスクブランク用のガラス基板、マスクブランクおよびフォトマスク |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI244120B (en) * | 2003-03-28 | 2005-11-21 | Hoya Corp | Method of manufacturing a mask blank |
| JP2006126816A (ja) * | 2004-09-29 | 2006-05-18 | Hoya Corp | マスクブランク用基板、マスクブランク、露光用マスク、半導体デバイスの製造方法、及びマスクブランク用基板の製造方法 |
| US20070003843A1 (en) * | 2005-06-10 | 2007-01-04 | Hoya Corporation | Defect inspection method for a glass substrate for a mask blank, glass substrate for a mask blank, mask blank, exposure mask, method of producing a glass substrate for a mask blank, method of producing a mask blank, and method of producing an exposure mask |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3377006B2 (ja) * | 1992-02-28 | 2003-02-17 | Hoya株式会社 | フォトマスクブランクの検査方法、フォトマスクの製造方法、フォトマスクブランク及びフォトマスクブランク用ガラス基板 |
| AU4291099A (en) * | 1998-09-30 | 2000-04-17 | Nikon Corporation | Photomask and exposure method |
| JP3572053B2 (ja) * | 2001-05-31 | 2004-09-29 | 株式会社東芝 | 露光マスクの製造方法、マスク基板情報生成方法、半導体装置の製造方法およびサーバー |
| JPWO2004083961A1 (ja) | 2003-03-20 | 2006-06-22 | Hoya株式会社 | レチクル用基板およびその製造方法、並びにマスクブランクおよびその製造方法 |
| JP2005043836A (ja) * | 2003-07-25 | 2005-02-17 | Shin Etsu Chem Co Ltd | フォトマスクブランク用基板の選定方法 |
| JP4340859B2 (ja) * | 2003-07-25 | 2009-10-07 | 信越化学工業株式会社 | フォトマスクブランク用基板の選定方法 |
| TWI329779B (en) * | 2003-07-25 | 2010-09-01 | Shinetsu Chemical Co | Photomask blank substrate, photomask blank and photomask |
| JP4761901B2 (ja) * | 2004-09-22 | 2011-08-31 | Hoya株式会社 | マスクブランクス用基板の製造方法、マスクブランクスの製造方法、露光用マスクの製造方法、反射型マスクの製造方法及び半導体装置の製造方法 |
| KR100710960B1 (ko) | 2004-09-29 | 2007-04-24 | 호야 가부시키가이샤 | 마스크 블랭크용 기판, 마스크 블랭크, 노광용 마스크,마스크 블랭크용 기판의 제조방법 및 반도체 제조방법 |
| JP5153998B2 (ja) * | 2005-02-25 | 2013-02-27 | Hoya株式会社 | マスクブランク用透明基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、及び半導体デバイスの製造方法 |
| JP2008204164A (ja) | 2007-02-20 | 2008-09-04 | Mitsubishi Electric Corp | 侵入検知装置 |
| JP5222660B2 (ja) * | 2008-08-07 | 2013-06-26 | Hoya株式会社 | マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法 |
| JP5335351B2 (ja) * | 2008-10-01 | 2013-11-06 | Hoya株式会社 | マスクブランク用基板セット、マスクブランクセット、フォトマスクセット、及び半導体デバイスの製造方法 |
-
2008
- 2008-08-07 JP JP2008204164A patent/JP5222660B2/ja active Active
-
2009
- 2009-08-06 KR KR1020090072454A patent/KR101240279B1/ko active Active
- 2009-08-06 TW TW102122421A patent/TWI461840B/zh active
- 2009-08-06 US US12/536,966 patent/US8048593B2/en active Active
- 2009-08-06 TW TW098126855A patent/TWI402615B/zh active
- 2009-08-07 DE DE102009036618.0A patent/DE102009036618B4/de not_active Expired - Fee Related
-
2011
- 2011-05-24 KR KR1020110049063A patent/KR20110074835A/ko not_active Ceased
- 2011-09-23 US US13/241,691 patent/US8440373B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI244120B (en) * | 2003-03-28 | 2005-11-21 | Hoya Corp | Method of manufacturing a mask blank |
| JP2006126816A (ja) * | 2004-09-29 | 2006-05-18 | Hoya Corp | マスクブランク用基板、マスクブランク、露光用マスク、半導体デバイスの製造方法、及びマスクブランク用基板の製造方法 |
| US20070003843A1 (en) * | 2005-06-10 | 2007-01-04 | Hoya Corporation | Defect inspection method for a glass substrate for a mask blank, glass substrate for a mask blank, mask blank, exposure mask, method of producing a glass substrate for a mask blank, method of producing a mask blank, and method of producing an exposure mask |
Also Published As
| Publication number | Publication date |
|---|---|
| US8440373B2 (en) | 2013-05-14 |
| US20120015286A1 (en) | 2012-01-19 |
| JP2010039352A (ja) | 2010-02-18 |
| DE102009036618A1 (de) | 2010-03-25 |
| US20100035028A1 (en) | 2010-02-11 |
| KR20100019373A (ko) | 2010-02-18 |
| US8048593B2 (en) | 2011-11-01 |
| TW201007349A (en) | 2010-02-16 |
| TW201341946A (zh) | 2013-10-16 |
| KR101240279B1 (ko) | 2013-03-07 |
| TWI402615B (zh) | 2013-07-21 |
| KR20110074835A (ko) | 2011-07-04 |
| JP5222660B2 (ja) | 2013-06-26 |
| DE102009036618B4 (de) | 2016-08-04 |
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