TWI461840B - 光罩基底用基板、光罩基底與光罩及其等之製造方法 - Google Patents

光罩基底用基板、光罩基底與光罩及其等之製造方法 Download PDF

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Publication number
TWI461840B
TWI461840B TW102122421A TW102122421A TWI461840B TW I461840 B TWI461840 B TW I461840B TW 102122421 A TW102122421 A TW 102122421A TW 102122421 A TW102122421 A TW 102122421A TW I461840 B TWI461840 B TW I461840B
Authority
TW
Taiwan
Prior art keywords
substrate
main surface
reticle
virtual reference
film
Prior art date
Application number
TW102122421A
Other languages
English (en)
Chinese (zh)
Other versions
TW201341946A (zh
Inventor
田邊勝
Original Assignee
Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｈｏｙａ股份有限公司 filed Critical Ｈｏｙａ股份有限公司
Publication of TW201341946A publication Critical patent/TW201341946A/zh
Application granted granted Critical
Publication of TWI461840B publication Critical patent/TWI461840B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW102122421A 2008-08-07 2009-08-06 光罩基底用基板、光罩基底與光罩及其等之製造方法 TWI461840B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008204164A JP5222660B2 (ja) 2008-08-07 2008-08-07 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
TW201341946A TW201341946A (zh) 2013-10-16
TWI461840B true TWI461840B (zh) 2014-11-21

Family

ID=41653203

Family Applications (2)

Application Number Title Priority Date Filing Date
TW102122421A TWI461840B (zh) 2008-08-07 2009-08-06 光罩基底用基板、光罩基底與光罩及其等之製造方法
TW098126855A TWI402615B (zh) 2008-08-07 2009-08-06 光罩基底用基板、光罩基底與光罩及其等之製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW098126855A TWI402615B (zh) 2008-08-07 2009-08-06 光罩基底用基板、光罩基底與光罩及其等之製造方法

Country Status (5)

Country Link
US (2) US8048593B2 (enExample)
JP (1) JP5222660B2 (enExample)
KR (2) KR101240279B1 (enExample)
DE (1) DE102009036618B4 (enExample)
TW (2) TWI461840B (enExample)

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JP5222660B2 (ja) * 2008-08-07 2013-06-26 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法
JP4971278B2 (ja) * 2008-09-25 2012-07-11 信越化学工業株式会社 フォトマスクブランクスの選択方法及び製造方法並びにフォトマスクの製造方法
JP5231918B2 (ja) 2008-09-26 2013-07-10 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、及び両面研磨装置
JP5335351B2 (ja) * 2008-10-01 2013-11-06 Ｈｏｙａ株式会社 マスクブランク用基板セット、マスクブランクセット、フォトマスクセット、及び半導体デバイスの製造方法
KR20130007570A (ko) * 2010-03-16 2013-01-18 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피 광학 부재용 기재, 및 그의 제조 방법
JP5637062B2 (ja) * 2010-05-24 2014-12-10 信越化学工業株式会社 合成石英ガラス基板及びその製造方法
CN101923292B (zh) * 2010-08-03 2012-10-17 深圳市路维电子有限公司 光罩边缘铬残留去除方法
JP5858623B2 (ja) * 2011-02-10 2016-02-10 信越化学工業株式会社 金型用基板
KR101343292B1 (ko) * 2011-04-12 2013-12-18 호야 가부시키가이샤 포토마스크용 기판, 포토마스크 및 패턴 전사 방법
JP6055732B2 (ja) * 2013-07-26 2016-12-27 Hoya株式会社 マスクブランク用基板、マスクブランク、およびそれらの製造方法、並びにインプリントモールドの製造方法
JP5658331B2 (ja) * 2013-07-31 2015-01-21 Hoya株式会社 マスクブランク用基板セットの製造方法、マスクブランクセットの製造方法、フォトマスクセットの製造方法、及び半導体デバイスの製造方法
US9798050B2 (en) * 2013-09-27 2017-10-24 Hoya Corporation Substrate with multilayer reflective film, mask blank, transfer mask and method of manufacturing semiconductor device
JP6094708B1 (ja) * 2015-09-28 2017-03-15 旭硝子株式会社 マスクブランク
US10948814B2 (en) * 2016-03-23 2021-03-16 AGC Inc. Substrate for use as mask blank, and mask blank
CN109313385A (zh) * 2016-06-28 2019-02-05 三井化学株式会社 防护膜、防护膜组件框体、防护膜组件及其制造方法
JP6293986B1 (ja) 2016-07-27 2018-03-14 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、半導体デバイスの製造方法、マスクブランク用基板、マスクブランク及び転写用マスク
JP6862859B2 (ja) * 2017-01-30 2021-04-21 Ａｇｃ株式会社 マスクブランク用のガラス基板、マスクブランクおよびフォトマスク

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TWI244120B (en) * 2003-03-28 2005-11-21 Hoya Corp Method of manufacturing a mask blank
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Also Published As

Publication number Publication date
JP5222660B2 (ja) 2013-06-26
JP2010039352A (ja) 2010-02-18
US20120015286A1 (en) 2012-01-19
TW201007349A (en) 2010-02-16
US20100035028A1 (en) 2010-02-11
KR20110074835A (ko) 2011-07-04
KR20100019373A (ko) 2010-02-18
US8048593B2 (en) 2011-11-01
US8440373B2 (en) 2013-05-14
KR101240279B1 (ko) 2013-03-07
TW201341946A (zh) 2013-10-16
DE102009036618A1 (de) 2010-03-25
DE102009036618B4 (de) 2016-08-04
TWI402615B (zh) 2013-07-21

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