JP5222660B2 - マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法 - Google Patents

マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法 Download PDF

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JP5222660B2
JP5222660B2 JP2008204164A JP2008204164A JP5222660B2 JP 5222660 B2 JP5222660 B2 JP 5222660B2 JP 2008204164 A JP2008204164 A JP 2008204164A JP 2008204164 A JP2008204164 A JP 2008204164A JP 5222660 B2 JP5222660 B2 JP 5222660B2
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Japan
Prior art keywords
substrate
main surface
mask blank
manufacturing
photomask
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JP2008204164A
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English (en)
Japanese (ja)
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JP2010039352A (ja
JP2010039352A5 (enExample
Inventor
勝 田辺
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Hoya Corp
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Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to JP2008204164A priority Critical patent/JP5222660B2/ja
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to KR1020090072454A priority patent/KR101240279B1/ko
Priority to TW102122421A priority patent/TWI461840B/zh
Priority to TW098126855A priority patent/TWI402615B/zh
Priority to US12/536,966 priority patent/US8048593B2/en
Priority to DE102009036618.0A priority patent/DE102009036618B4/de
Publication of JP2010039352A publication Critical patent/JP2010039352A/ja
Priority to KR1020110049063A priority patent/KR20110074835A/ko
Publication of JP2010039352A5 publication Critical patent/JP2010039352A5/ja
Priority to US13/241,691 priority patent/US8440373B2/en
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Publication of JP5222660B2 publication Critical patent/JP5222660B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2008204164A 2008-08-07 2008-08-07 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法 Active JP5222660B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2008204164A JP5222660B2 (ja) 2008-08-07 2008-08-07 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法
TW102122421A TWI461840B (zh) 2008-08-07 2009-08-06 光罩基底用基板、光罩基底與光罩及其等之製造方法
TW098126855A TWI402615B (zh) 2008-08-07 2009-08-06 光罩基底用基板、光罩基底與光罩及其等之製造方法
US12/536,966 US8048593B2 (en) 2008-08-07 2009-08-06 Mask blank substrate, mask blank, photomask, and methods of manufacturing the same
KR1020090072454A KR101240279B1 (ko) 2008-08-07 2009-08-06 마스크블랭크용 기판, 마스크블랭크 및 포토마스크 그리고 그것들의 제조방법
DE102009036618.0A DE102009036618B4 (de) 2008-08-07 2009-08-07 Herstellungsverfahren für ein Maskenrohlingsubstrat, für einen Maskenrohling, für eine Photomaske und für ein Halbleiterbauelement
KR1020110049063A KR20110074835A (ko) 2008-08-07 2011-05-24 마스크블랭크용 기판, 마스크블랭크, 포토마스크 및 반도체 디바이스 그리고 그것들의 제조방법
US13/241,691 US8440373B2 (en) 2008-08-07 2011-09-23 Mask blank substrate, mask blank, photomask, and methods of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008204164A JP5222660B2 (ja) 2008-08-07 2008-08-07 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法

Related Child Applications (1)

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JP2012134648A Division JP5323966B2 (ja) 2012-06-14 2012-06-14 マスクブランク用基板、マスクブランク、フォトマスク及び半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2010039352A JP2010039352A (ja) 2010-02-18
JP2010039352A5 JP2010039352A5 (enExample) 2011-07-21
JP5222660B2 true JP5222660B2 (ja) 2013-06-26

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JP2008204164A Active JP5222660B2 (ja) 2008-08-07 2008-08-07 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法

Country Status (5)

Country Link
US (2) US8048593B2 (enExample)
JP (1) JP5222660B2 (enExample)
KR (2) KR101240279B1 (enExample)
DE (1) DE102009036618B4 (enExample)
TW (2) TWI461840B (enExample)

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JP5222660B2 (ja) * 2008-08-07 2013-06-26 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、フォトマスクの製造方法及び半導体デバイスの製造方法
JP4971278B2 (ja) * 2008-09-25 2012-07-11 信越化学工業株式会社 フォトマスクブランクスの選択方法及び製造方法並びにフォトマスクの製造方法
JP5231918B2 (ja) 2008-09-26 2013-07-10 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、及び両面研磨装置
JP5335351B2 (ja) * 2008-10-01 2013-11-06 Ｈｏｙａ株式会社 マスクブランク用基板セット、マスクブランクセット、フォトマスクセット、及び半導体デバイスの製造方法
KR20130007570A (ko) * 2010-03-16 2013-01-18 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피 광학 부재용 기재, 및 그의 제조 방법
JP5637062B2 (ja) * 2010-05-24 2014-12-10 信越化学工業株式会社 合成石英ガラス基板及びその製造方法
CN101923292B (zh) * 2010-08-03 2012-10-17 深圳市路维电子有限公司 光罩边缘铬残留去除方法
JP5858623B2 (ja) * 2011-02-10 2016-02-10 信越化学工業株式会社 金型用基板
KR101343292B1 (ko) * 2011-04-12 2013-12-18 호야 가부시키가이샤 포토마스크용 기판, 포토마스크 및 패턴 전사 방법
JP6055732B2 (ja) * 2013-07-26 2016-12-27 Hoya株式会社 マスクブランク用基板、マスクブランク、およびそれらの製造方法、並びにインプリントモールドの製造方法
JP5658331B2 (ja) * 2013-07-31 2015-01-21 Hoya株式会社 マスクブランク用基板セットの製造方法、マスクブランクセットの製造方法、フォトマスクセットの製造方法、及び半導体デバイスの製造方法
US9798050B2 (en) * 2013-09-27 2017-10-24 Hoya Corporation Substrate with multilayer reflective film, mask blank, transfer mask and method of manufacturing semiconductor device
JP6094708B1 (ja) * 2015-09-28 2017-03-15 旭硝子株式会社 マスクブランク
US10948814B2 (en) * 2016-03-23 2021-03-16 AGC Inc. Substrate for use as mask blank, and mask blank
CN109313385A (zh) * 2016-06-28 2019-02-05 三井化学株式会社 防护膜、防护膜组件框体、防护膜组件及其制造方法
JP6293986B1 (ja) 2016-07-27 2018-03-14 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、半導体デバイスの製造方法、マスクブランク用基板、マスクブランク及び転写用マスク
JP6862859B2 (ja) * 2017-01-30 2021-04-21 Ａｇｃ株式会社 マスクブランク用のガラス基板、マスクブランクおよびフォトマスク

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JP5335351B2 (ja) * 2008-10-01 2013-11-06 Ｈｏｙａ株式会社 マスクブランク用基板セット、マスクブランクセット、フォトマスクセット、及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
JP2010039352A (ja) 2010-02-18
US20120015286A1 (en) 2012-01-19
TWI461840B (zh) 2014-11-21
TW201007349A (en) 2010-02-16
US20100035028A1 (en) 2010-02-11
KR20110074835A (ko) 2011-07-04
KR20100019373A (ko) 2010-02-18
US8048593B2 (en) 2011-11-01
US8440373B2 (en) 2013-05-14
KR101240279B1 (ko) 2013-03-07
TW201341946A (zh) 2013-10-16
DE102009036618A1 (de) 2010-03-25
DE102009036618B4 (de) 2016-08-04
TWI402615B (zh) 2013-07-21

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