KR101209536B1 - 플라즈마의 한정을 전기적으로 강화시키는 방법 - Google Patents

플라즈마의 한정을 전기적으로 강화시키는 방법 Download PDF

Info

Publication number
KR101209536B1
KR101209536B1 KR1020077015129A KR20077015129A KR101209536B1 KR 101209536 B1 KR101209536 B1 KR 101209536B1 KR 1020077015129 A KR1020077015129 A KR 1020077015129A KR 20077015129 A KR20077015129 A KR 20077015129A KR 101209536 B1 KR101209536 B1 KR 101209536B1
Authority
KR
South Korea
Prior art keywords
plasma
region
confinement structure
electrical conductors
power source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020077015129A
Other languages
English (en)
Korean (ko)
Other versions
KR20070089838A (ko
Inventor
안드라스 쿠티
김지수
에릭 렌즈
라진다르 딘드사
루민 리
레자 사드자디
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20070089838A publication Critical patent/KR20070089838A/ko
Application granted granted Critical
Publication of KR101209536B1 publication Critical patent/KR101209536B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020077015129A 2004-12-30 2005-12-29 플라즈마의 한정을 전기적으로 강화시키는 방법 Expired - Fee Related KR101209536B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/024,978 US7632375B2 (en) 2004-12-30 2004-12-30 Electrically enhancing the confinement of plasma
US11/024,978 2004-12-30

Publications (2)

Publication Number Publication Date
KR20070089838A KR20070089838A (ko) 2007-09-03
KR101209536B1 true KR101209536B1 (ko) 2012-12-07

Family

ID=36088342

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077015129A Expired - Fee Related KR101209536B1 (ko) 2004-12-30 2005-12-29 플라즈마의 한정을 전기적으로 강화시키는 방법

Country Status (6)

Country Link
US (1) US7632375B2 (enExample)
JP (1) JP5183213B2 (enExample)
KR (1) KR101209536B1 (enExample)
CN (1) CN101088139B (enExample)
TW (1) TWI390584B (enExample)
WO (1) WO2006074050A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210012073A (ko) * 2019-07-09 2021-02-03 한양대학교 산학협력단 기판 처리 장치

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3992018B2 (ja) * 2003-07-23 2007-10-17 松下電器産業株式会社 プラズマ処理装置
US8253057B1 (en) * 2004-09-03 2012-08-28 Jack Hunt System and method for plasma generation
US8268116B2 (en) 2007-06-14 2012-09-18 Lam Research Corporation Methods of and apparatus for protecting a region of process exclusion adjacent to a region of process performance in a process chamber
US8450635B2 (en) * 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
JP5197036B2 (ja) * 2008-01-23 2013-05-15 株式会社ピュアロンジャパン プラズマ発生装置
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
JP5496568B2 (ja) 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5597463B2 (ja) 2010-07-05 2014-10-01 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US10388493B2 (en) * 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
KR101971312B1 (ko) * 2011-11-23 2019-04-22 램 리써치 코포레이션 다중 존 가스 주입 상부 전극 시스템
CN103187234B (zh) * 2011-12-30 2016-03-16 中微半导体设备(上海)有限公司 一种用于等离子体处理装置的可调节约束装置
JP6078419B2 (ja) * 2013-02-12 2017-02-08 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法、プラズマ処理方法及びプラズマ処理装置
JP6539113B2 (ja) * 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
CN108242380B (zh) * 2016-12-27 2019-09-06 中微半导体设备(上海)股份有限公司 一种均匀抽真空的双工位真空处理器
EP3550678B1 (en) 2018-04-04 2020-02-26 Kern Technologies, LLC Folded slab waveguide laser
KR102098002B1 (ko) * 2018-10-19 2020-04-07 세메스 주식회사 기판 처리 장치
KR102097984B1 (ko) * 2018-10-19 2020-05-26 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102256216B1 (ko) * 2019-06-27 2021-05-26 세메스 주식회사 플라즈마 처리 장치 및 플라즈마 제어 방법
JP2022044209A (ja) * 2020-09-07 2022-03-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN114566415A (zh) * 2020-11-27 2022-05-31 中微半导体设备(上海)股份有限公司 等离子体处理装置
EP4280987A4 (en) * 2021-01-23 2025-01-01 Sheperak, Thomas J. PLASMA GAS GENERATOR
JP7534235B2 (ja) * 2021-02-01 2024-08-14 東京エレクトロン株式会社 フィルタ回路及びプラズマ処理装置
CN116614926A (zh) * 2022-02-09 2023-08-18 中微半导体设备(上海)股份有限公司 等离子体约束系统及方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000082702A (ja) 1999-08-20 2000-03-21 Semiconductor Energy Lab Co Ltd プラズマ反応方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4483737A (en) * 1983-01-31 1984-11-20 University Of Cincinnati Method and apparatus for plasma etching a substrate
JP2732281B2 (ja) * 1989-02-20 1998-03-25 三洋電機株式会社 薄膜形成方法
JPH03291374A (ja) * 1990-04-05 1991-12-20 Matsushita Electric Ind Co Ltd イオン源および連続蒸着媒体の製造方法
US5316645A (en) * 1990-08-07 1994-05-31 Canon Kabushiki Kaisha Plasma processing apparatus
JP2859721B2 (ja) * 1990-08-07 1999-02-24 キヤノン株式会社 プラズマ処理装置
JPH0645094A (ja) * 1992-03-31 1994-02-18 Matsushita Electric Ind Co Ltd プラズマ発生方法およびその装置
JPH0645096A (ja) * 1992-03-31 1994-02-18 Matsushita Electric Ind Co Ltd プラズマ発生方法およびその装置
US5252178A (en) 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
JPH06124794A (ja) * 1992-10-14 1994-05-06 Kobe Steel Ltd プラズマ発生装置
US6375860B1 (en) 1995-03-10 2002-04-23 General Atomics Controlled potential plasma source
US5534751A (en) 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
JP3151596B2 (ja) * 1995-07-20 2001-04-03 東京エレクトロン株式会社 プラズマ処理方法およびその装置
US5846883A (en) * 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US5981899A (en) * 1997-01-17 1999-11-09 Balzers Aktiengesellschaft Capacitively coupled RF-plasma reactor
US5904800A (en) 1997-02-03 1999-05-18 Motorola, Inc. Semiconductor wafer processing chamber for reducing particles deposited onto the semiconductor wafer
US6599399B2 (en) * 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
US20010037770A1 (en) * 2000-04-27 2001-11-08 Toru Otsubo Plasma processing apparatus and processing method
US6184489B1 (en) 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6019060A (en) 1998-06-24 2000-02-01 Lam Research Corporation Cam-based arrangement for positioning confinement rings in a plasma processing chamber
US5998932A (en) 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US6178919B1 (en) 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
JP2000331993A (ja) * 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
US6872281B1 (en) 2000-09-28 2005-03-29 Lam Research Corporation Chamber configuration for confining a plasma
US6492774B1 (en) * 2000-10-04 2002-12-10 Lam Research Corporation Wafer area pressure control for plasma confinement
US20020067133A1 (en) * 2000-12-06 2002-06-06 Brown Jeffrey J. Method for lighting an inductively coupled plasma at low pressure
US6911779B2 (en) * 2001-04-20 2005-06-28 John Madocks Magnetic mirror plasma source
US6602381B1 (en) * 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
KR100403630B1 (ko) * 2001-07-07 2003-10-30 삼성전자주식회사 고밀도 플라즈마를 이용한 반도체 장치의 층간 절연막 형성방법
US6579425B2 (en) * 2001-07-16 2003-06-17 Sharp Laboratories Of America, Inc. System and method for forming base coat and thin film layers by sequential sputter depositing
US6984288B2 (en) * 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
US6841943B2 (en) * 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US20050016684A1 (en) * 2003-07-25 2005-01-27 Applied Materials, Inc. Process kit for erosion resistance enhancement

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000082702A (ja) 1999-08-20 2000-03-21 Semiconductor Energy Lab Co Ltd プラズマ反応方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210012073A (ko) * 2019-07-09 2021-02-03 한양대학교 산학협력단 기판 처리 장치
KR102279639B1 (ko) * 2019-07-09 2021-07-20 한양대학교 산학협력단 기판 처리 장치

Also Published As

Publication number Publication date
CN101088139A (zh) 2007-12-12
WO2006074050A3 (en) 2007-04-19
CN101088139B (zh) 2012-06-27
WO2006074050A2 (en) 2006-07-13
KR20070089838A (ko) 2007-09-03
TWI390584B (zh) 2013-03-21
US20090165954A1 (en) 2009-07-02
US7632375B2 (en) 2009-12-15
JP5183213B2 (ja) 2013-04-17
TW200703410A (en) 2007-01-16
JP2008527634A (ja) 2008-07-24

Similar Documents

Publication Publication Date Title
KR101209536B1 (ko) 플라즈마의 한정을 전기적으로 강화시키는 방법
KR100936647B1 (ko) 독립적인 플라즈마 밀도／화학 및 이온에너지 제어를 갖춘이중 주파수 플라즈마 에칭 반응기
JP4597367B2 (ja) プラズマ発生装置及びプラズマ発生方法
JP4758046B2 (ja) 均一なプロセス速度を生成するためのプラズマ処理装置及びアンテナ構成
CN101506950B (zh) 使用多频率rf功率的混合rf电容和电感耦合等离子源及其使用方法
KR100557273B1 (ko) 플라즈마에 튜닝되는 샤워헤드 ｒｆ 전극을 갖는 아킹 억제된 ｍｅｒｉｅ 플라즈마 반응기
JP5116806B2 (ja) 複数の周波数に同時に応答する電極を備えたプラズマ処理装置の動作方法
KR101480738B1 (ko) 환형 배플
US20090223926A1 (en) Plasma processing apparatus and impedance adjustment method
US20070044915A1 (en) Vacuum plasma processor having a chamber with electrodes and a coil for plasma excitation and method of operating same
TW200302682A (en) Plasma processing apparatus capable of performing uniform plasma treatment by preventing drift in plasma discharge current
JP6785377B2 (ja) プラズマ処理装置
CN104025279B (zh) 一种用于等离子体处理的卡盘组件和用于给静电卡盘组件供电的方法
JP4030766B2 (ja) プラズマ処理装置
WO2022108753A1 (en) Plasma uniformity control using a static magnetic field
KR101475502B1 (ko) 다중방전관을 갖는 플라즈마 반응기
KR101314670B1 (ko) 하이브리드 플라즈마 반응기
WO2025164456A1 (ja) プラズマ処理装置
KR20250134622A (ko) 지지체, 기판 지지기 및 플라즈마 처리 장치

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R15-X000 Change to inventor requested

St.27 status event code: A-3-3-R10-R15-oth-X000

R16-X000 Change to inventor recorded

St.27 status event code: A-3-3-R10-R16-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20151123

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20161123

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20171204

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20171204

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000