KR101178984B1 - Ｒｕ 금속 층을 기판에 증착하는 방법 및 전구체 이송 방법 - Google Patents

Ｒｕ 금속 층을 기판에 증착하는 방법 및 전구체 이송 방법 Download PDF

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KR101178984B1
KR101178984B1 KR1020077009822A KR20077009822A KR101178984B1 KR 101178984 B1 KR101178984 B1 KR 101178984B1 KR 1020077009822 A KR1020077009822 A KR 1020077009822A KR 20077009822 A KR20077009822 A KR 20077009822A KR 101178984 B1 KR101178984 B1 KR 101178984B1
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South Korea
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gas
precursor
metal
carbonyl
substrate
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Expired - Lifetime
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Korean (ko)
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KR20070083871A (ko
Inventor
켄지 스즈키
앙마뉘엘 기돗띠
거트 제이 루싱크
펜톤 알 멕필리
Original Assignee
인터내셔널 비지네스 머신즈 코포레이션
도쿄엘렉트론가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020077009822A 2004-11-23 2005-10-03 Ｒｕ 금속 층을 기판에 증착하는 방법 및 전구체 이송 방법 Expired - Lifetime KR101178984B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/996,145 2004-11-23
US10/996,145 US7270848B2 (en) 2004-11-23 2004-11-23 Method for increasing deposition rates of metal layers from metal-carbonyl precursors
PCT/US2005/035582 WO2006057709A2 (en) 2004-11-23 2005-10-03 Method for deposition of metal layers from metal carbonyl precursors

Publications (2)

Publication Number Publication Date
KR20070083871A KR20070083871A (ko) 2007-08-24
KR101178984B1 true KR101178984B1 (ko) 2012-08-31

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Family Applications (1)

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KR1020077009822A Expired - Lifetime KR101178984B1 (ko) 2004-11-23 2005-10-03 Ｒｕ 금속 층을 기판에 증착하는 방법 및 전구체 이송 방법

Country Status (8)

Country Link
US (2) US7270848B2 (https=)
EP (1) EP1828430B1 (https=)
JP (1) JP4980235B2 (https=)
KR (1) KR101178984B1 (https=)
CN (1) CN100572591C (https=)
AT (1) ATE519870T1 (https=)
TW (1) TWI300098B (https=)
WO (1) WO2006057709A2 (https=)

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US7651570B2 (en) * 2005-03-31 2010-01-26 Tokyo Electron Limited Solid precursor vaporization system for use in chemical vapor deposition
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US20070218200A1 (en) * 2006-03-16 2007-09-20 Kenji Suzuki Method and apparatus for reducing particle formation in a vapor distribution system
US8268078B2 (en) * 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
US7892358B2 (en) * 2006-03-29 2011-02-22 Tokyo Electron Limited System for introducing a precursor gas to a vapor deposition system
US20070231489A1 (en) * 2006-03-29 2007-10-04 Tokyo Electron Limited Method for introducing a precursor gas to a vapor deposition system
US8034406B2 (en) * 2006-09-26 2011-10-11 Tokyo Electron Limited Integrated substrate processing in a vacuum processing tool
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JP5236197B2 (ja) * 2007-03-28 2013-07-17 東京エレクトロン株式会社 成膜方法および成膜装置
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US7829454B2 (en) * 2007-09-11 2010-11-09 Tokyo Electron Limited Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
US7704879B2 (en) * 2007-09-27 2010-04-27 Tokyo Electron Limited Method of forming low-resistivity recessed features in copper metallization
US7772110B2 (en) * 2007-09-28 2010-08-10 Tokyo Electron Limited Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing
US7884012B2 (en) * 2007-09-28 2011-02-08 Tokyo Electron Limited Void-free copper filling of recessed features for semiconductor devices
US7776740B2 (en) * 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
US8247030B2 (en) * 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
JP4731580B2 (ja) * 2008-03-27 2011-07-27 東京エレクトロン株式会社 成膜方法および成膜装置
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US7799681B2 (en) * 2008-07-15 2010-09-21 Tokyo Electron Limited Method for forming a ruthenium metal cap layer
CN102112649A (zh) * 2008-08-05 2011-06-29 东京毅力科创株式会社 载置台构造
US20100081274A1 (en) * 2008-09-29 2010-04-01 Tokyo Electron Limited Method for forming ruthenium metal cap layers
US7977235B2 (en) * 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
US8716132B2 (en) * 2009-02-13 2014-05-06 Tokyo Electron Limited Radiation-assisted selective deposition of metal-containing cap layers
US8242019B2 (en) * 2009-03-31 2012-08-14 Tokyo Electron Limited Selective deposition of metal-containing cap layers for semiconductor devices
JP2011063850A (ja) * 2009-09-17 2011-03-31 Tokyo Electron Ltd 成膜装置、成膜方法および記憶媒体
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US8178439B2 (en) 2010-03-30 2012-05-15 Tokyo Electron Limited Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices
CN102173447B (zh) * 2010-12-20 2012-11-14 钢铁研究总院 一种由氧化钨或钼直接合成钨或钼羰基金属络合物的方法
CN102140625B (zh) * 2011-01-05 2013-07-17 景德镇陶瓷学院 一种采用羰基钨为前驱体制备用于聚变堆中面向等离子体钨涂层的方法
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CN102717066A (zh) * 2012-06-05 2012-10-10 金川集团股份有限公司 一种制备铁包覆粉的方法
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Also Published As

Publication number Publication date
WO2006057709A3 (en) 2006-09-28
TWI300098B (en) 2008-08-21
WO2006057709A2 (en) 2006-06-01
CN100572591C (zh) 2009-12-23
US7270848B2 (en) 2007-09-18
TW200628629A (en) 2006-08-16
WO2006057709A8 (en) 2007-05-31
CN101124352A (zh) 2008-02-13
JP2008520835A (ja) 2008-06-19
US7678421B2 (en) 2010-03-16
EP1828430B1 (en) 2011-08-10
JP4980235B2 (ja) 2012-07-18
EP1828430A2 (en) 2007-09-05
KR20070083871A (ko) 2007-08-24
US20060110530A1 (en) 2006-05-25
ATE519870T1 (de) 2011-08-15
US20080003360A1 (en) 2008-01-03

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