KR101174321B1 - 응집 현상에 의해 자기 조직화된 나노 구조 박막의 제조 방법 - Google Patents

응집 현상에 의해 자기 조직화된 나노 구조 박막의 제조 방법 Download PDF

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KR101174321B1
KR101174321B1 KR1020100135802A KR20100135802A KR101174321B1 KR 101174321 B1 KR101174321 B1 KR 101174321B1 KR 1020100135802 A KR1020100135802 A KR 1020100135802A KR 20100135802 A KR20100135802 A KR 20100135802A KR 101174321 B1 KR101174321 B1 KR 101174321B1
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South Korea
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thin film
self
thickness
layer
organized
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Korean (ko)
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KR20110076809A (ko
Inventor
재근 하
마사오 가미코
정우 구
재민 김
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고쿠리츠다이가쿠호우진 도쿄다이가쿠
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020100135802A 2009-12-29 2010-12-27 응집 현상에 의해 자기 조직화된 나노 구조 박막의 제조 방법 Expired - Fee Related KR101174321B1 (ko)

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KR20090132423 2009-12-29
KR1020090132423 2009-12-29

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KR20110076809A KR20110076809A (ko) 2011-07-06
KR101174321B1 true KR101174321B1 (ko) 2012-08-16

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KR1020100135802A Expired - Fee Related KR101174321B1 (ko) 2009-12-29 2010-12-27 응집 현상에 의해 자기 조직화된 나노 구조 박막의 제조 방법

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JP (1) JP5610393B2 (https=)
KR (1) KR101174321B1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3178067B2 (ja) 1991-02-26 2001-06-18 ぺんてる株式会社 スズ−ニッケル二元合金電気めっき液組成物
KR20140036403A (ko) * 2012-09-13 2014-03-26 포항공과대학교 산학협력단 발광 다이오드의 패턴 형성 방법
CN109207949B (zh) * 2018-10-23 2020-06-16 宁波工程学院 一种镀制非均匀多层薄膜的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242880A (ja) 2006-03-08 2007-09-20 Tdk Corp 成膜方法
KR100813243B1 (ko) 2006-07-04 2008-03-13 삼성에스디아이 주식회사 탄소나노튜브를 이용한 반도체 소자의 층간 배선 및 그제조 방법
JP2009135501A (ja) 2007-11-28 2009-06-18 Commissariat A L'energie Atomique 結晶化方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0585773A (ja) * 1991-09-26 1993-04-06 Central Glass Co Ltd 基材表面への微細凹凸被膜の形成法
JPH0786282A (ja) * 1993-09-20 1995-03-31 Oki Electric Ind Co Ltd 配線形成方法
JP2008108924A (ja) * 2006-10-26 2008-05-08 Matsushita Electric Works Ltd 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体発光素子の製造方法
WO2009113195A1 (ja) * 2008-03-13 2009-09-17 大陽日酸株式会社 ブラシ状カーボンナノ構造物製造用触媒体、触媒体製造方法、ブラシ状カーボンナノ構造物及びその製法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242880A (ja) 2006-03-08 2007-09-20 Tdk Corp 成膜方法
KR100813243B1 (ko) 2006-07-04 2008-03-13 삼성에스디아이 주식회사 탄소나노튜브를 이용한 반도체 소자의 층간 배선 및 그제조 방법
JP2009135501A (ja) 2007-11-28 2009-06-18 Commissariat A L'energie Atomique 結晶化方法

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JP2011137230A (ja) 2011-07-14
KR20110076809A (ko) 2011-07-06

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