JP5610393B2 - 自己組織化されたナノ構造薄膜の製造方法、ナノ構造薄膜 - Google Patents

自己組織化されたナノ構造薄膜の製造方法、ナノ構造薄膜 Download PDF

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Publication number
JP5610393B2
JP5610393B2 JP2010283138A JP2010283138A JP5610393B2 JP 5610393 B2 JP5610393 B2 JP 5610393B2 JP 2010283138 A JP2010283138 A JP 2010283138A JP 2010283138 A JP2010283138 A JP 2010283138A JP 5610393 B2 JP5610393 B2 JP 5610393B2
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Japan
Prior art keywords
thin film
self
thickness
nanostructured thin
producing
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JP2010283138A
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Japanese (ja)
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JP2011137230A (ja
JP2011137230A5 (https=
Inventor
在根 河
在根 河
公男 神子
公男 神子
正祐 具
正祐 具
在▲ミン▼ 金
在▲ミン▼ 金
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University of Tokyo NUC
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University of Tokyo NUC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2010283138A 2009-12-29 2010-12-20 自己組織化されたナノ構造薄膜の製造方法、ナノ構造薄膜 Expired - Fee Related JP5610393B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20090132423 2009-12-29
KR10-2009-0132423 2009-12-29

Publications (3)

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JP2011137230A JP2011137230A (ja) 2011-07-14
JP2011137230A5 JP2011137230A5 (https=) 2014-01-30
JP5610393B2 true JP5610393B2 (ja) 2014-10-22

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JP2010283138A Expired - Fee Related JP5610393B2 (ja) 2009-12-29 2010-12-20 自己組織化されたナノ構造薄膜の製造方法、ナノ構造薄膜

Country Status (2)

Country Link
JP (1) JP5610393B2 (https=)
KR (1) KR101174321B1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3178067B2 (ja) 1991-02-26 2001-06-18 ぺんてる株式会社 スズ−ニッケル二元合金電気めっき液組成物
CN109207949A (zh) * 2018-10-23 2019-01-15 宁波工程学院 一种镀制非均匀多层薄膜的方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140036403A (ko) * 2012-09-13 2014-03-26 포항공과대학교 산학협력단 발광 다이오드의 패턴 형성 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0585773A (ja) * 1991-09-26 1993-04-06 Central Glass Co Ltd 基材表面への微細凹凸被膜の形成法
JPH0786282A (ja) * 1993-09-20 1995-03-31 Oki Electric Ind Co Ltd 配線形成方法
JP2007242880A (ja) 2006-03-08 2007-09-20 Tdk Corp 成膜方法
KR100813243B1 (ko) 2006-07-04 2008-03-13 삼성에스디아이 주식회사 탄소나노튜브를 이용한 반도체 소자의 층간 배선 및 그제조 방법
JP2008108924A (ja) * 2006-10-26 2008-05-08 Matsushita Electric Works Ltd 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体発光素子の製造方法
WO2009113195A1 (ja) * 2008-03-13 2009-09-17 大陽日酸株式会社 ブラシ状カーボンナノ構造物製造用触媒体、触媒体製造方法、ブラシ状カーボンナノ構造物及びその製法
WO2009068756A1 (fr) 2007-11-28 2009-06-04 Commissariat A L'energie Atomique Procede de cristallisation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3178067B2 (ja) 1991-02-26 2001-06-18 ぺんてる株式会社 スズ−ニッケル二元合金電気めっき液組成物
CN109207949A (zh) * 2018-10-23 2019-01-15 宁波工程学院 一种镀制非均匀多层薄膜的方法
CN109207949B (zh) * 2018-10-23 2020-06-16 宁波工程学院 一种镀制非均匀多层薄膜的方法

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JP2011137230A (ja) 2011-07-14
KR20110076809A (ko) 2011-07-06
KR101174321B1 (ko) 2012-08-16

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