KR101158208B1 - Method for forming hole and plating of substrates using plasma - Google Patents

Abstract

The present invention relates to a hole processing and plating method of a substrate using a plasma, in the hole processing and plating method of a substrate using a plasma having two chambers integrally, exposing and etching the substrate, Etching the resin layer and the polyimide layer left in the substrate using plasma in a first chamber to form holes in the substrate, after forming holes in the substrate in the first chamber, Desmear step of removing the residue remaining on the wall using a plasma, After the desmear of the substrate, moving the substrate to the second chamber through a substrate movement passage and plating the substrate in the second chamber It is achieved by providing a hole processing and plating method of the substrate using a plasma containing.

Description

Hole processing and plating method of substrate using plasma {METHOD FOR FORMING HOLE AND PLATING OF SUBSTRATES USING PLASMA}

The present invention relates to a hole processing and plating method of a substrate using a plasma, and more particularly, plasma plating on a desmear and a substrate to remove residues remaining in holes in the substrate after the etching process and the etching process for processing holes in the substrate. The present invention relates to a hole processing and plating method of a substrate using a plasma that can be performed continuously.

Due to the high prevalence and versatility of electronic devices, the size of a substrate on which a plurality of electronic components are mounted increases in size, and the number of holes using a laser in the substrate increases as the layer of the substrate increases.

Plasma etching is widely used in semiconductor processes and has been continuously developed. On the other hand, the use of plasma etching in substrate processing is relatively slower than the semiconductor process. After machining the hole in the substrate using a lot has been used only to aid the desmear for removing the residue remaining in the hole of the substrate or to modify the surface to improve the plating of the substrate.

 However, as the number of laser hole processing increases recently, the cost of laser hole processing is increasing. Recently, due to the reduction of the hole size of the substrate and the limitation of the desmear, the interest of the plasma etching method in the substrate processing gradually started to develop. .

In order to solve this problem, instead of using a laser to process the hole in the substrate to process the hole using a plasma etching method, the residue in the substrate hole generated by the hole processing can be removed, and the plating process using plasma There is increasing interest in the hole processing and plating method of the substrate using the plasma to proceed continuously.

Accordingly, an object of the present invention is to provide a process of hole processing and plating of a substrate using plasma, and a process of plating a substrate using plasma and a desmear to remove residues remaining in the hole after the hole processing. have.

The above object of the present invention, in the hole processing and plating method of a substrate using a plasma having two chambers integrally, exposing and etching the substrate, the substrate in the first chamber using a plasma to the substrate Etching the remaining resin layer and the polyimide layer to form a hole in the substrate, and forming a hole in the substrate in the first chamber, and then removing the residues remaining on the hole bottom and the wall of the substrate using plasma And a desmearing step, after the desmearing of the substrate, moving the substrate to a second chamber through a substrate movement passage, and plating the substrate in the second chamber. This is accomplished by providing a plating method.

In addition, the gas used to etch the resin layer and the polyimide layer left on the substrate in the first chamber may be N2, O2, Ar / H2 and CF4 or SiF4.

In addition, the gas used to etch the resin layer and the polyimide layer remaining on the substrate may be supplied by a gas supply unit connected to one side of the first chamber.

In addition, in the etching of the resin layer and the polyimide layer remaining on the substrate in the first chamber, the substrate movement passage may be closed.

In addition, in the desmear step of forming a hole in the substrate in the first chamber and removing residues remaining on the hole bottom and the wall of the substrate by using plasma, the material of the substrate is CCL (Copper Clad Laminate). The glass fiber can be etched.

In addition, in the desmear step of forming a hole in the substrate in the first chamber and removing residues remaining on the hole bottom and wall of the substrate using plasma, the material of the substrate may be a resin coated copper (RCC). The resin can be etched.

In addition, after forming holes in the substrate in the first chamber, the gas used in the desmear step of removing residues remaining on the hole bottom and wall of the substrate by using plasma is N2, O2, Ar / H2, CF4. In addition, a Cl system can be used.

In addition, in the desmear step of removing the residues remaining on the hole bottom and the wall surface of the substrate using plasma after forming holes in the substrate in the first chamber, the substrate movement passage may be closed.

In addition, after the substrate is desmeared, the substrate movement passage may be opened when the substrate moves to the second chamber through the substrate movement passage.

In addition, in the plating of the substrate in the second chamber, a target material sputtered from a target metal by plasma may be plated on the substrate.

In addition, in the plating of the substrate in the second chamber, the substrate movement passage may be closed.

According to the present invention, in the hole processing and plating method of a substrate using plasma having two chambers integrally, hole processing, desmear processing, and sputter plating can be performed using two chambers using plasma, thereby reducing defects caused by foreign substances. And there is an advantage that can reduce the time reduction due to process movement.

1 to 3 are flowcharts of exposure and etching of a substrate according to an embodiment of the present invention.
4 to 5 is a flow chart of the hole processing and plating method of the substrate using a plasma.
6 to 8 is a flow chart of the hole processing and plating method of the substrate using the plasma of the present invention.

The situation regarding the operational effects including the technical configuration of the hole processing and plating method of the substrate using the plasma according to the present invention will be clearly understood by the following detailed description with reference to the drawings in which preferred embodiments of the present invention are shown.

The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. The embodiments may be provided to make the disclosure of the present invention complete, and to fully inform the scope of the invention to those skilled in the art.

With reference to Figures 1 and 6 will be described in detail the hole processing and plating method of the substrate using a plasma according to an embodiment of the present invention.

In the hole processing and plating method of a substrate using a plasma according to an embodiment of the present invention, two chambers are integrally formed, exposing and etching a substrate, and using the plasma in a first chamber. Forming a hole in the substrate by etching the resin layer and the polyimide layer remaining in the substrate; removing the residues remaining on the hole bottom and wall of the substrate by using plasma after forming the hole in the substrate in the first chamber; And desmearing, moving the substrate to a second chamber through a substrate moving passage after desmearing the substrate, and plating the substrate in the second chamber.

1 to 3, by exposing and etching the substrate 10, a dry film 11 is applied to the substrate, and a mask (not shown) is used to form a circuit required by a user. The exposure is performed. That is, as the shutter is opened when taking a picture, an image is formed on the dry film 11 as the image is formed on the dry film 11 through exposure, and the parts to be a circuit, that is, the parts exposed to light (ultraviolet) are cured. )do.

In the development process, portions in which the circuit is to be formed, that is, portions not exposed to light, are dissolved and removed in a developer (sodium carbonate), and the copper copper foil layer 10a is exposed to the removed portions.

In the etching process, the copper copper foil layer 10a is removed using a corrosion solution, and a copper chloride solution or an iron chloride solution is mainly used as the corrosion solution.

In the stripping process, the dry film 11 temporarily used to form a circuit is peeled off using a sodium hydroxide solution.

4 and 8, after the exposing and etching the substrate, the substrate is inserted into the first chamber 100 (not shown), and left in the substrate 10 in the first chamber 100. The resin layer 10b and the polyimide layer 10c are removed using plasma to form holes 10d in the substrate.

The resin layer 10b and the polyimide layer 10c left on the substrate 10 are epoxy resin 10b impregnated with glass fibers, an epoxy resin 10b layer or a polyimide layer 10c without glass fibers. This can be

When the material of the substrate 10 is CCL (Copper Clad Laminate), the glass fiber is etched, and when the material of the substrate 10 is RCC (resin coated copper), the resin is etched and removed by plasma.

In detail, holes 10d of the substrate are formed by the plasma environment 120 for etching using plasma in the first chamber 100, and the holes of the substrate are used in the first chamber 100. Plasma environment for etching 120 is N ₂ , O ₂ , Ar / H ₂ , CF ₄ , or SiF ₄ You can use either.

The gas (N ₂ , O ₂ , Ar / H ₂ , CF ₄ , or SiF _{4 )} is _formed by the gas supply unit 180 connected to the gas pipe 180 and the gas pipe 180 positioned at one end of the first chamber 100. The gas is selectively injected into the first chamber 100.

At this time, a current is applied to the support 110 holding the substrate 10 so that a larger current flows toward the substrate 10, so that plasma ions generated by the plasma etch the substrate 10. .

In this step, the substrate movement passage 170 is not opened to prevent the generated plasma ions from passing from the first chamber 100 to the second chamber 200.

In the desmear step of forming a hole in the substrate 10 in the first chamber 100 and removing residues remaining on the bottom and wall of the hole of the substrate 10 using plasma, the first chamber 100 Gas is injected into the first chamber 100 by the gas supply unit 190 connected to the), the gas used here includes N ₂ , In addition to O ₂ , Ar / H ₂ , CF ₄ , CI-based gases can be used.

The gas (N ₂ , O ₂ , Ar / H ₂ , CF ₄ , other CI-based gas) is the gas supply unit 190 connected to the gas pipe 180 and the gas pipe 180 located at one end of the first chamber 100. By the gas is selectively injected into the first chamber (100).

In this step, the substrate movement passage 170 is not opened to prevent the plasma ions generated in the first chamber 100 from being transferred to the second chamber.

In the step of moving the substrate 10 to the second chamber through the substrate movement passage 170 after the desmearing of the substrate 10, the substrate 10 is coupled by the support 110. The clamp may be fixed (not shown), and other methods may be used.

The substrate 10 coupled to the support 110 moves from the first chamber 100 to the second chamber 200 by a mechanical operation such as a conveyor belt (not shown). After the substrate 10 is moved from the first chamber 100 to the second chamber 200 after the movement passage 170 is opened, the substrate movement passage 170 is closed.

In the step of plating the substrate 10 in the second chamber 200 after the hole processing process and the desmear to the substrate with a plasma in the first chamber 100 is sputtered from the target metal 140 by the plasma A target material (ion) 141 is plated on the substrate 10.

As a method of plating the substrate 10, a conventional sputtering plating method may be used. In detail, the current input portion of the second chamber 200 in a direction opposite to the current of the first chamber 100 may be used. Applying a current to the 150, and also by applying a higher current to the target metal 140 portion so that sputtering occurs on the target metal 140 side, the target material 141 is sputtered from the target metal 140 Ions are deposited on the surface of the substrate and plated, whereby the substrate movement path is closed.

Although the hole processing and plating method of the substrate using the plasma of the present invention has been described above with reference to a preferred embodiment of the present invention, modifications, changes, and various modifications can be made without departing from the spirit of the present invention. It is obvious to

100: first chamber 110: support
120: plasma environment for substrate etching 130: shutter
140: target metal 141: target material
150: current input portion 160: ground
170: substrate movement path 180: gas piping
190: gas supply unit 200: second chamber
10: substrate 10a: copper copper foil layer
10b: resin 10c: polyimide
10d: hall

Claims (11)

In the hole processing and plating method of the substrate using a plasma having a first chamber and a second chamber integrally,
(A) forming a circuit formation region on the upper surface of the substrate by exposure, and etching a copper copper foil layer in a region other than the circuit formation region on the upper surface of the substrate to form a circuit
(B) etching the resin layer and the polyimide layer below the copper copper foil layer by plasma in the first chamber on the substrate on which the circuit is formed by etching to form holes;
(C) a desmear step of forming a hole in the substrate in the first chamber and then removing residues remaining on the hole bottom and the wall of the substrate using plasma;
(D) after the desmear of the hole, the substrate is moved to a second chamber through a substrate movement passage; and
(E) plating the substrate in the second chamber;
Hole processing and plating method of the substrate using a plasma comprising a.
The method of claim 1,
And the gas used to etch the resin layer and the polyimide layer left on the substrate in the first chamber is N2, O2, Ar / H2 and CF4 or SiF4.
The method of claim 1,
And a gas used to etch the resin layer and the polyimide layer remaining on the substrate is supplied by a gas supply connected to one side of the first chamber.
The method of claim 1,
And etching the resin layer and the polyimide layer remaining on the substrate in the first chamber, using a plasma in which a substrate movement path is closed.
The method of claim 1,
In the step (C), if the substrate material is CCL (Copper Clad Laminate), the hole processing and plating method of the substrate using a plasma etching the glass fiber.
The method of claim 1,
In the step (C), if the material of the substrate is RCC (Resin coated Copper), hole processing and plating method of the substrate using a plasma etching the resin.
The method of claim 1,
The gas used in the step (C) is N2, O2, Ar / H2, CF4 hole processing and plating method of the substrate using a plasma further using a Cl-based.
The method of claim 1,
In the step (C), the hole processing and plating method of the substrate using a plasma in which the substrate movement passage is closed.
The method of claim 1,
In the step (D), the hole processing and plating method of the substrate using the plasma that the substrate movement passage is open.
The method of claim 1,
In the step (E), the hole processing and plating method of the substrate using a plasma in which the target material ions sputtered from the target metal by the plasma is deposited on the surface of the substrate to be plated.
The method of claim 1,
In the step (E), the hole processing and plating method of the substrate using the plasma is closed.

Images