KR101157668B1 - Method of and system for manufacturing organic el devices - Google Patents

Abstract

The color shift due to the film formation defect of the organic layer of the organic EL element is eliminated, and the yield is improved.

A pretreatment step (S1) for forming a lower electrode or the like on a substrate; a film formation step (S2) for forming an organic layer having at least an organic light emitting functional layer and an upper electrode on the lower electrode after the pretreatment step (S1); In the manufacturing method of the organic electroluminescent element which has the sealing process (S3) which seals and closes an organic layer and an upper electrode after S2), the inspection process (SS) is performed after the pretreatment process (S1) and before forming an upper electrode.

Organic EL device, pretreatment process, organic light emitting functional layer, chromaticity

Description

The manufacturing method and manufacturing apparatus of organic EL element TECHNICAL FIELD

BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing explaining the manufacturing method of the organic electroluminescent element which concerns on embodiment of this invention.

It is explanatory drawing explaining the manufacturing method of the organic electroluminescent element which concerns on embodiment of this invention.

It is explanatory drawing explaining the manufacturing method of the organic electroluminescent element which concerns on embodiment of this invention.

It is explanatory drawing explaining the manufacturing method of the organic electroluminescent element which concerns on embodiment of this invention.

It is explanatory drawing explaining the manufacturing method of the organic electroluminescent element which concerns on embodiment of this invention.

It is explanatory drawing explaining the manufacturing method of the organic electroluminescent element which concerns on embodiment of this invention.

It is explanatory drawing explaining the manufacturing method of the organic electroluminescent element which concerns on embodiment of this invention.

8 is an explanatory diagram for explaining the method for manufacturing an organic EL device according to the embodiment of the present invention.

It is explanatory drawing explaining the manufacturing method of the organic electroluminescent element which concerns on embodiment of this invention.

It is explanatory drawing explaining the manufacturing method of the organic electroluminescent element which concerns on embodiment of this invention.

It is explanatory drawing explaining the manufacturing method of the organic electroluminescent element which concerns on embodiment of this invention.

It is explanatory drawing explaining the manufacturing apparatus of the organic electroluminescent element which concerns on embodiment of this invention.

It is explanatory drawing explaining the manufacturing apparatus of the organic electroluminescent element which concerns on embodiment of this invention.

<Description of the symbols for the main parts of the drawings>

S1: pretreatment process

S2: film forming process

S3: sealing process

SS: Inspection Process

10, 10A, 20, 20A: film forming apparatus

11, 12, 13, 22, 23, 24: deposition chamber (cluster type)

12A, 13A, 14A, 22A, 23A, 24A, 25A: Deposition Chamber (Inline Type)

35A: Predeposition Chamber

15, 15A, 25: laboratory

30: sealing device

41: Board carrying room

42, 42A, 43, 43A: exchange room

44, 44A: discharge chamber

G: vacuum gate

P, PA: data transmission means

This invention relates to the manufacturing method and manufacturing apparatus of organic electroluminescent element.

The organic EL device has a basic structure in which an organic layer including an lower electrode and an organic light emitting functional layer and an upper electrode are laminated on a substrate, and an upper electrode and a lower electrode are applied by applying a voltage between the upper electrode and the lower electrode. On the cathode side formed on one side of the electrons, electrons are injected into the organic layer, and holes on the anode side formed on the other side of the upper electrode and the lower electrode are injected into the organic layer, and they emit light by recombining in the organic light emitting functional layer in the organic layer. to be.

The method for producing such an organic EL device has a step including a pretreatment step, a film formation step, and a sealing step. In general, in the pretreatment step, after forming and patterning the lower electrode and the drawing electrode on the substrate, an insulating film is formed to pattern the opening of the light emitting region on the lower electrode. In the film forming step, an organic layer (for example, a hole transport layer, a light emitting layer, an electron transport layer) and an upper electrode including an organic light emitting functional layer on the lower electrode are sequentially formed in the opening of the above-described light emitting region, thereby forming an organic EL element on the substrate. To form. In a sealing process, in order to block the formed organic electroluminescent element from external air, an organic electroluminescent element is sealed and sealed using a sealing member or a sealing film.

In the manufacturing method of such an organic electroluminescent element, an inspection process is performed in order to find the defective product which an organic electroluminescent element does not show favorable light emission characteristic by film-forming defect etc .. In general, this inspection step is performed after the sealing step in order to avoid exposure of the formed organic EL element to the outside air during the inspection, but in Patent Document 1 below, an inspection chamber in which a room is maintained in a vacuum or a dry atmosphere is provided to form an upper electrode. After that (after the film forming step), a test step of inspecting the light emission characteristics of the organic EL element is performed, and a method of not performing a subsequent sealing step has been proposed for the defect.

The inspection content in this inspection step is to investigate the light emission characteristics by applying a voltage between the lower electrode and the upper electrode. The chromaticity shift check is performed on the organic EL element which is desired to obtain a specific emission color for color display. . This color shift is caused by a reflection interference phenomenon of light emitted by multiple reflections between the upper electrode and the lower electrode sandwiching the organic layer, and the peak wavelength of the emitted light is shifted with respect to a desired emission color. It is a problem that occurs when the film thickness of the organic layer is not formed at a predetermined film thickness regardless of the emission method or the top emission method.

As for this color shift, conventionally, for example, as described in Patent Document 2 below, a film thickness sensor using a crystal oscillator or the like is used, or the fluorescence intensity obtained when ultraviolet rays are irradiated to evaporation molecules at the time of vapor deposition is measured and desired. This is addressed by forming a film so as to obtain a film thickness.

Patent Document 1: Japanese Patent Application Laid-Open No. 2001-291585

Patent Document 2: Japanese Patent Laid-Open No. 2000-294372

According to the prior art described in Patent Literature 1, an inspection process is performed after the upper electrode is formed, so that the organic EL element having a light emission defect or chromaticity deviation is judged to be defective, so that the defective organic EL element is excluded before the sealing process. The subsequent steps can be omitted. Thereby, process loss can be reduced and production efficiency can be improved. However, since the inspection after the formation of the upper electrode, even when the film thickness is out of the set film thickness and color shift occurs, there is no room for correcting this, and it is necessary to exclude that it is determined to be defective in the inspection process. Therefore, the yield of the product directly affects the film forming precision in the film forming process. When the film forming defects increase, the yield deteriorates. When the high film forming precision is required, the productivity deteriorates.

In the film forming step, as shown in Patent Document 2 described above, film formation is performed while the film thickness is measured, but neither measurement method directly measures the film thickness of the organic layer laminated on the lower electrode. Since only thickness measurement is carried out, there is a problem that variations easily occur in the film thickness of the organic layer actually formed according to various conditions, and this causes a color shift.

This invention makes it an example of a subject to cope with such a problem. That is, in the manufacturing method and manufacturing apparatus of the lower electrode on a board | substrate, the organic layer which has an organic light emitting functional layer, and the upper electrode, into a film, improving product yield by reducing the generation of defective goods by a film-forming defect, It is an object of the present invention to form an organic EL device which does not cause chromaticity deviation by forming a film thickness of an organic layer with a precisely set film thickness.

In order to achieve such an object, the manufacturing method and manufacturing apparatus of the organic EL element according to the present invention have at least the configuration according to each of the following independent claims.

Claim 1 A pretreatment step of forming at least a lower electrode on a substrate, a film formation step of forming an organic layer having at least an organic light emitting functional layer and an upper electrode on the bottom electrode after the pretreatment step, and the organic layer after the film formation step And a sealing step of sealing and sealing the upper electrode, wherein the inspection step is performed from the pretreatment step until the formation of the upper electrode.

12. An apparatus for producing an organic EL device, comprising a film forming apparatus for forming an organic layer having at least an organic light emitting functional layer and an upper electrode on the lower electrode after a pretreatment step of forming at least a lower electrode on a substrate. The film forming apparatus includes a film forming chamber having carry-in means for carrying the substrate after the pretreatment step into a film forming process, a film forming means for forming an organic layer on the substrate, a conveying means for conveying the substrate between the film forming chambers; And an inspection chamber provided with a film thickness measuring means for measuring the film thickness of the layer formed on the substrate in the film formation chamber.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings. BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing explaining the outline | summary of the manufacturing method of the organic electroluminescent element which concerns on embodiment of this invention. According to this manufacturing method, embodiment of this invention is the film-forming process which forms an organic layer and an upper electrode which have an organic light emitting functional layer at least on this lower electrode after the preprocessing process (S1) which forms a lower electrode etc. on a board | substrate ( S2) and a sealing step (S3) for sealing and sealing the organic layer and the upper electrode after the film forming step (S2), and performing the inspection step (SS) from the pretreatment step (S1) to the formation of the upper electrode in the film forming step (S2). will be.

According to this, the inspection step (SS) is performed after the pretreatment step (S1) and before the upper electrode, which is the final step of the film formation step (S2), is formed. If the inspection result is poor film formation, repair this to obtain an appropriate film thickness state. Can be. In addition, in the multi-layer film formation, it is easy to find out what kind of defect has occurred during film formation by inserting the inspection step (SS) in the middle thereof, and it is reflected in the film formation in the next lot to prevent the occurrence of a defect from the next lot. You can stop it.

In addition, the inspection process (SS) shown in FIG. 1 is performed by measuring the film thickness of a lower electrode or an organic layer, For example, an inspection process (SS) can be performed using an optical film thickness measuring method. However, in embodiment of this invention, when measuring the film thickness of the lower electrode mentioned above, it is not limited to the case where the film thickness of only a lower electrode is measured, and base layers, such as a planarization film under a lower electrode, and a board | substrate are included. This includes the case where these total film thicknesses are measured. Moreover, even when measuring the film thickness of an organic layer, it is not limited to the case where the film thickness of only the organic layer formed into a film was measured, and also including the film thickness of the lower electrode, a base layer, etc. under it, is also included.

According to this, since the film thickness of the laminated lower electrode etc. and an organic layer are measured, subsequent film-forming can be set based on this measured film thickness, and the film thickness of the final organic layer can be formed with high precision. In addition, by employing the optical film thickness measurement method as the film thickness measurement, optical properties such as refractive index can be simultaneously measured, and the film thickness can be set in consideration of the optical properties for subsequent film formation. As the optical film thickness measuring method, an optical interference type film thickness meter, spectroscopic ellipsometry, light absorption method, or the like can be adopted. In addition, since the laminated film thickness is measured during film formation, the film thickness of the final organic layer or the like can be matched to the set film thickness with high accuracy even if the film formation itself is not performed with high accuracy.

(A)-(c) of FIG. 2 classify embodiment of this invention about FIG. 1 about the time to perform an inspection process (SS), and an inspection process (SS) is formed into a film forming process after a pretreatment process (S1). Example performed before (S2) (FIG. 2 (a)), the example where the inspection process (SS) was performed twice after the pretreatment process (S1) and during the film forming process (S2) (inspection process (SS1, SS2)) It is explanatory drawing which shows the example (FIG. 2 (c)) which performed FIG.2 (b) and test | inspection process SS in the film-forming process S2, respectively. 3 to 5 are diagrams illustrating in detail the respective film forming steps S2 of FIGS. 2A to 2C. Hereinafter, these are demonstrated one by one.

FIG. 2 (a) shows the inspection step SS for inspecting the film thickness of the lower electrode formed in the pretreatment step S1 before the film formation step S2. In addition, although the film | membrane examined here is mainly a lower electrode, when there exist a planarization film, an insulating film, a protective film, etc. which are a base layer, you may measure the total film thickness of these and a lower electrode. Moreover, the case where a thin film is used for the ITO substrate of a bottom emission also includes the case where the total film thickness of the board | substrate containing this ITO substrate, a base layer, and the whole lower electrode was measured. On the other hand, the base layer refers to a film formed between the substrate and the lower electrode, specifically, a planarization film for embedding the irregularities generated in the functional elements, such as a thin film transistor (TFT), a color conversion filter, a color filter formed on the substrate; Means an insulating film or a protective film formed on the flattening film in order to block the release of gas (water vapor or the like) from the flattening film. In addition to the insulating film of the base layer formed on the planarization film mentioned above, the insulating film also has the insulating film which partitions each organic element. Hereinafter, a base layer shall have the same component as the above-mentioned content. However, these base layers are not necessarily required components in the present invention.

FIG. 3 is an explanatory diagram illustrating the process of FIG. 2A in more detail, and as shown in FIG. 3, after the pretreatment step S1, the thickness of the lower electrode is measured in the inspection step SS. Based on the result of the inspection process (SS), after forming at least one 1st organic layer of the film-forming process S2, the film thickness of the organic layer laminated | stacked on this 1st organic layer can be adjusted. That is, as shown in FIG. 3, in the film forming step S2, the film forming of the layer 1 (S2 ₁ ). Based on the inspection result of the inspection process (SS) after the film formation (S2 _n ) of the layer n is made, the film thickness adjustment of the layer n + 1 formed afterwards based on the result of the film thickness measurement of the lower electrode or the like ( St) takes place. Then, the film forming the upper electrode (film formation by another layer, if necessary) the film thickness adjusting layer on the n + 1 (St) is formed (S2 _e). The film thickness adjustment (St) is made by simulating luminescence properties from the measurement results of the optical film thickness measurement method and predicting chromaticity deviation. The chromaticity shift can be prevented beforehand by making layer n + 1 into a chromaticity correction layer formed by the film-forming process after an inspection process.

Thus, according to the manufacturing method of the organic electroluminescent element shown to FIG.2 (a), FIG.3, since the film thickness of a lower electrode etc. can be measured before carrying in to the vacuum vapor deposition apparatus by film-forming process S2, The lower electrode may be formed without being restricted by the pretreatment step S1. In this case, therefore, in the pretreatment step S1, the equipment and the like for maintaining the vacuum state are unnecessary as before, and the equipment cost can be reduced.

In addition, as shown in Fig. 2 (a) and Fig. 3, an inspection step (SS) for measuring the film thickness of the lower electrode is performed before the film formation step (S2), and these data are simulated and calculated to be formed thereafter. By optimally calculating the film thicknesses of the hole transport layer, the light emitting functional layer, and the electron transport layer, it becomes possible to perform correction in the feedforward format at the time of deposition of each layer.

Subsequently, FIG.2 (b) performs the inspection process SS1 which examines the film thickness of the lower electrode etc. which were formed in the pretreatment process S1 before film-forming process S2, and also examines during film-forming process S2. The process (SS2) is performed. Here, the film to be inspected in the inspection step (SS1) is mainly a lower electrode as in Figs. 2 (a) and 3, but the total film thickness of the lower electrode and the base layer including the planarization film or the like in addition to the lower electrode may be used. In particular, the case where the thin film is adopted as the substrate includes the case where the total film thicknesses of the entire substrate, the base layer and the lower electrode are measured as described above.

In the inspection step SS2 performed in the film formation step S2, the inspection step SS2 is performed after the formation of at least one first organic layer, and the inspection step SS1 and the inspection step after the pretreatment step S1 are performed. The film thickness adjustment of the organic layer laminated | stacked on a 1st organic layer can be performed based on the test result of (SS2).

That is, as shown in FIG. 4, test | inspection process SS1 is performed between preprocessing process S1 and before film-forming process S2, and the film thickness of a lower electrode etc. is measured. And to the film-forming step (S2), the deposition of the layer ₁ (S2 1) ... After the formation of the layer n (S2 _n ) of the layer n is carried out, the inspection step (SS2) is performed to measure the thickness of the organic layer laminated up to the layer n, and the result of the measurement of the thickness of these two inspection steps (SS1, SS2). Based on this, the film thickness adjustment St of the layer n + 1 to be formed after is made. Then, the film forming the upper electrode (film formation by another layer, if necessary) the film thickness adjusting layer on the n + 1 (St) is formed (S2 _e). The film thickness adjustment (St) is made by simulating luminescence properties from the measurement results of the optical film thickness measurement method and predicting chromaticity deviation.

Thus, based on both results of the two inspection processes SS1 and SS2 shown to FIG.2 (b) and FIG.4, the layer n + 1 as a chromaticity correction layer by film thickness adjustment (St) has few errors. It can calculate as an optimal film thickness. That is, the thickness of the lower electrode or the like formed in the pretreatment step S1 can be accurately determined in the inspection step SS1, and the thickness of the organic layer formed in the deposition step S2 can be accurately determined in the inspection step SS2. Therefore, the film thickness of layer n + 1 of the chromaticity correction layer by film thickness adjustment St can be calculated as an optimal value with few errors with a set film thickness. As a result, since the film thickness of the layer n + 1 formed into a film is an optimal film thickness in order to suppress chromaticity shift, color shift can be prevented beforehand.

Subsequently, FIG.2 (c) performs an inspection process (SS) during the film-forming process S2 which forms an organic layer containing an organic light emitting functional layer after a pretreatment process (S1). At this time, as shown in FIG. 5, in the inspection step SS, the inspection step SS is performed after the formation of the at least one first organic layer, and the first inspection is performed based on the inspection result of the inspection step SS. The film thickness of the organic layer laminated on the organic layer can be adjusted. That is, as shown in FIG. 5, in the film formation step S2, the film formation S2 ₁ of layer 1. After the formation of the layer n (S2 _n ), the inspection step (SS) is performed to measure the thickness of the organic layer laminated up to the layer n in the inspection step (SS). On the basis of this, the film thickness adjustment St of the layer n + 1 deposited after is made. Then, the film forming the upper electrode (film formation by another layer, if necessary) the film thickness adjusting layer on the n + 1 (St) is formed (S2 _e). The film thickness adjustment (St) is made by simulating luminescence properties from the measurement results of the optical film thickness measurement method and predicting chromaticity deviation. The chromaticity shift can be prevented beforehand by making the layer n + 1 formed after an inspection process into a chromaticity correction layer.

Thus, as shown in FIG.2 (c), FIG.5, the layer n + 1 formed later by performing an inspection process (SS) in the film-forming process S2 which forms an organic layer containing an organic light emitting functional layer. By setting this as a chromaticity correction layer, chromaticity shift can be prevented beforehand.

As described above with reference to Figs. 2A to 2C and Figs. 3 to 5, the inspection steps SS, SS1, and SS2 are performed after the pretreatment step S1, and then the upper part of the film formation step S2. It is carried out before electrode formation and based on these inspection results, the organic layer formed later is formed as a chromaticity correction layer, and chromaticity shift is eliminated.

In addition, these inspection process (SS, SS2) shown to FIG.2 (b), (c) and FIG.4, FIG.5 may adjust the film thickness of the 1st organic layer mentioned above based on each inspection result. That is, the film thickness of the first organic layer formed into a film is measured, and a chromaticity correction layer which performs chromaticity adjustment by forming a same first organic layer on the first organic layer as a chromaticity correction layer may be formed. In addition, these specific examples are demonstrated in detail using FIGS. 7-10 mentioned later.

Next, an example of the method of measuring the film thickness formed into a film in FIGS. 1-5 is demonstrated using FIG. Usually, there is a method of directly measuring the film thickness of the lower electrode or the like laminated on the substrate as an inspection method for measuring the film thickness of the lower electrode, the base layer, the light emitting layer, and the like. The film | membrane of the same material is formed into a film different from a film-forming place (for example, using the empty space of a mother glass substrate), and the method of measuring the film thickness of this single film directly is mentioned.

For example, as shown in FIG. 6, the organic EL panel 3 which has many organic EL elements 2 is arrange | positioned on the mother glass substrate 1 of a multi-sided phase (other multiple phase), and these organic The EL panel 3 has the lead-out wiring part 4 in the adjacent edge part. The mother glass substrate 1 is equipped with a single film area A for measuring the film thickness of each layer in a part of the plane (for example, the edge of the side of the mother glass substrate 1). In this single film region A, the lower electrode single film 5, the base layer planarization film single film 6, the insulating film single film 7, the hole injection layer single film 8, and the light emitting layer R single film ( 9), the light emitting layer (G) single film 10, the light emitting layer (B) single film 11, and the electron transporting layer single film 12 are separately formed, and the film thickness of each of the single films is directly measured to obtain an organic EL panel ( When forming 3), the film thickness of each layer laminated | stacked can be obtained correctly. On the other hand, in the embodiment of the present invention, each single film formed in the single film region A is not limited to the number of the single films described above, but is smaller than the number of the single films described above or a larger number of single films (for example, holes). One having a transport layer single film or the like).

Hereinafter, more specific embodiment of this invention is described. In the embodiment shown in Figs. 7 to 9 (corresponding to Figs. 2A to 2C and Figs. 3 to 5, respectively), three layers of a hole transporting layer, a light emitting layer, and an electron transporting layer are formed by evaporation as an organic layer. This is an example.

In the embodiment shown in FIG. 7, the inspection step SS is performed on the lower electrode or the like formed on the substrate via the pretreatment step S1 as in FIGS. 2A and 3.

Specifically, first, after the pretreatment step (S1), the substrate is loaded (S101), and the cleaning is performed (S102), and then the inspection step (SS) by optical film thickness measurement is performed, whereby the film thickness of the lower electrode or the like. Measure After that, the film forming step S2 is performed. In the film forming step (S2), the hole transport layer is deposited on the lower electrode (S201), and then the light emitting layer is deposited (S202), and the electron transport layer is deposited (S203).

In this inspection step (SS), for example, the spectroscopic ellipsometry is employed to measure the thickness of the laminated film of the lower electrode and the like, and when the thickness of the laminated film in that state is measured, the optical properties and the film of each layer determined at the time of the measurement are measured. Based on the results of the measurement of the thickness, simulation calculations of the luminescence properties are carried out, and then the film thickness of the chromaticity correction layer formed is adjusted so that the peak wavelength of the emitted light determined by the film thickness of the organic layer matches the desired chromaticity. Then, a chromaticity correction layer composed of the electron transport layer is deposited on the electron transport layer at the film thickness set by this adjustment (S204).

Thereafter, the upper electrode is deposited (S205), inspection (SSA) is carried out by actual measurement of the light emission characteristics as in the prior art, and it is confirmed that there is no color shift, and the organic EL element is sealed in the sealing step (S3). ).

In the embodiment shown in FIG. 8, the inspection process SS1 by optical film thickness measurement is performed through the pretreatment process S1 in the same manner as FIG. The film thicknesses of the lower electrode and the like are measured, and before the upper electrode of the film forming step S2 is formed, the inspection step SS2 is performed to measure the film thickness of the formed organic layer. Specifically, first, after the pretreatment step (S1), the substrate is loaded (S101), and after the cleaning is performed (S102), by the inspection step (SS1), for example, a spectroscopic ellipsometry is adopted to provide a lower electrode or the like. Measure it. Next, in the film formation step (S2), the hole transport layer is deposited on the lower electrode (S201), then the light emitting layer is deposited (S202), and the electron transport layer is deposited (S203). At this stage, inspection by optical film thickness measurement is performed (inspection process (SS2)). In the inspection step SS2, similarly to the inspection step SS1, for example, spectroscopic ellipsometry is adopted to measure the thickness of the laminated film of the hole transport layer, the light emitting layer, and the electron transport layer laminated on the lower electrode.

When the film thicknesses of the lower electrode and the organic layer laminated by the two inspection steps (SS1 and SS2) are measured, simulation calculations of the luminescence properties are performed based on the measurement results of the optical properties and the film thicknesses of the respective layers determined at the time of the measurement. The film thickness of the chromaticity correction layer formed after that is formed so that the peak wavelength of the emitted light determined by the film thickness of the organic layer may match the desired chromaticity. Then, the chromaticity correction layer which consists of an electron carrying layer is deposited similarly on the electron carrying layer before an inspection process (SS2) by the film thickness set by this adjustment (S204).

After that, the upper electrode is deposited (S205), and inspection (SSA) is carried out by the actual measurement of the luminescence properties in the same manner as in the prior art to confirm that there is no color shift, and the organic EL element is sealed in the sealing step. (S3).

In the embodiment shown in FIG. 9, similarly to FIGS. 2C and 5, first, a substrate on which a lower electrode or the like is formed is loaded through a pretreatment step (S101), followed by cleaning (S102), and then a film forming step ( S2) is made. In the film forming step (S2), the hole transport layer is deposited on the lower electrode (S201), then the light emitting layer is deposited (S202), and the electron transport layer is deposited (S203). In this step, inspection by optical film thickness measurement is performed (inspection process (SS)). In this inspection step (SS), for example, spectral ellipsometry is adopted to measure the thickness of the laminated film of the hole transport layer, the light emitting layer, the electron transport layer, and the like laminated on the lower electrode.

When the laminated film thickness in the state is measured in the inspection step (SS), simulation calculations of the luminescence properties are made based on the optical properties of the respective layers determined at the time of the measurement and the measurement result of the film thickness, and the film thickness of the organic layer is used. The film thickness of the chromaticity correction layer formed after that is formed so that the peak wavelength of the determined emission light may correspond with a desired chromaticity. Then, the chromaticity correction layer which consists of an electron carrying layer is deposited similarly on the electron carrying layer before an inspection process (SS) by the film thickness set by this adjustment (S204).

After that, the upper electrode is deposited (S205), an inspection (SSA) is carried out by the actual measurement of the luminescence properties in the same manner as in the prior art, and it is confirmed that there is no color shift, and the organic EL element is sealed in the sealing step. (S3).

On the other hand, in the film forming step (S2) shown in Figs. 7 to 9, the film forming set value of each organic layer or electron transport layer to be formed is set so as to obtain the desired film thickness of the desired organic layer including the chromaticity correction layer after the inspection step ( That is, the film thickness setting at the time of film-forming is made so that the laminated film thickness measured in each inspection process may become thinner than the film thickness of a desired organic layer).

Thus, according to the embodiment shown in FIGS. 7-9, the inspection process (SS, SS1, SS2) which measured the film thickness after the pretreatment process or during film-forming about the thing which shifted in color by the film-forming defect at the time of film-forming is completed. By adjusting) by the chromaticity correction layer, the film-forming defect can be prevented in advance. Here, the inspection steps (SS, SS2) were inserted after the film formation to the electron transport layer, but not limited to this, the inspection step (SS) or the like is inserted into the front end layer (e.g., at the end of film formation of the light emitting layer), and then the film formation thereafter. The layer to be used may be a chromaticity correction layer.

Next, as shown in FIG. 10, embodiment of this invention performs the inspection process SS from the pretreatment process S1 of a specific lot (the nth lot) to the upper electrode formation of the film forming process S2, and the Based on the inspection result, the film thickness adjustment (St) is performed at the time of film formation of the layer n in the film formation step (S2) in the next lot (n + 1th lot). When these are explained in detail, it is possible to detect a defect in forming a lot and to use it in setting the film thickness at the next lot forming. Therefore, it is possible to prevent the same film forming defect from occurring in the same layer forming process. Can be.

By the film thickness adjustment St mentioned above, chromaticity adjustment of the light emission color in the said organic electroluminescent element can be performed. That is, by adjusting the film thickness St, the film thickness of the final organic layer is adjusted to show the peak wavelength that matches the chromaticity of the emission color of the organic EL device, whereby a good organic EL device without chromaticity can be obtained.

That is, in the embodiment of the present invention, the lot (hereinafter referred to as N lot) is formed by performing each inspection step (SS, SS1, SS2) from the pretreatment step (S1) to the formation of the upper electrode of the film formation step (S2). ) And the next lot (hereinafter referred to as N + 1 lot), the chromaticity shift is adjusted by performing the following correction.

1) In the same deposition chamber, the film forming process of the N + 1 lot is adjusted (feedback).

For example, when the thickness of the light emitting layer of N lot was measured, when the film thickness of the hole injection layer was formed thick (or thin), the film thickness of the hole injection layer was also adjusted for the lot after N + 1 lot. The film is formed to have an appropriate film thickness.

2) In another vapor deposition chamber, the film formation process of N + 1 lots is adjusted (feedforward).

For example, when the film thickness of the light emitting layer of N lot was measured, when the film thickness of the lower electrode was formed into a thin film, the lot after the N lot was brought into the preliminary deposition chamber, and a chromaticity correction layer (for example, an electron transport layer) was set. It forms suitably so that it may become thickness. This adjustment is effective for the film formation failure before the film formation step S2 of the lower electrode, the base layer, the insulating film layer, and the like.

3) In another vapor deposition chamber, the film formation process of N + 1 lots is adjusted (feedback).

For example, when the thickness of the hole injection layer was formed to be thick (or thin) when the film thickness of the light emitting layer of N lots was measured, the film thickness of the hole transporting layer and the light emitting layer of the lot after N + 1 lot was appropriate. The film is formed to be thick.

4) Adjust the film formation process of N lots.

For example, when the film thickness of the N lot was measured, when the film thickness of the hole injection layer was thinly formed, the N lot was fed back, brought back into the deposition chamber of the hole injection layer, and formed into an appropriate film thickness. Alternatively, the feedforward is carried into the preliminary deposition chamber to form a chromaticity correction layer.

Hereinafter, the example which implements each inspection process (SS, SS1, SS2) in order to feedback to the next lot is shown using FIG. FIG. 11: is an example which performs the inspection process SS1 after the pretreatment process S1 of FIG. 2 (b) and FIG. 4, and the inspection process SS2 in the film-forming process S2.

In FIG. 11, the inspection process (SS1, SS2) of the same formula is performed after the pretreatment process (S1) or after each layer film-forming. According to this embodiment, for example, after the pretreatment step S1, the inspection step SS1 for measuring the film thickness of the lower electrode or the like is performed to feed back to the pretreatment step S1 for forming the lower electrode formed in the next lot. And the set film thickness of the lower electrode. In addition, for example, it is compared with a hole transport layer deposition (S201) after the inspection step comprising (SS2 _1), where it is set when the film thickness of this deposition is measured by a laminated film thickness of the hole transport layer. When the measured laminated film thickness is different from the set film thickness and the allowable range or more, the difference is fed back to the setting at the time of film formation of the lower electrode or the deposition of the hole transport layer formed in the next lot. In the illustrated example, the inspection step (SS2 ₁ ~ SS2 ₃₎ a Despite an example performed for each organic layer is not limited thereto, by selecting the easy specific layer to occur variation of the magnetic film such inspection step (SS1, SS2 ₁ to SS2 ₃ ) may be used.

According to this embodiment, in addition to the operation of the above-described embodiment, the subsequent lot can be returned to the desired film thickness, and it is possible to prevent the formation of a film formation defect of the same type in a continuous lot in advance.

As a manufacturing apparatus which implement | achieves the manufacturing method of such embodiment, after the pretreatment process which forms at least a lower electrode on a board | substrate, it is organic provided with the film-forming apparatus which forms the organic layer which has an organic light emitting functional layer on the said lower electrode, and an upper electrode. In the apparatus for manufacturing an EL element, the film forming apparatus includes a film forming room including carry-in means for carrying the substrate after the pretreatment step into a film forming step, a film forming means for forming an organic layer on the substrate, and the film forming chamber. It is comprised so that the test chamber may be equipped with the conveying means which conveys a board | substrate, and the film thickness measuring means which measures the film thickness of the layer formed on the said board | substrate in the said film-forming chamber. Moreover, a film thickness measuring means can be comprised by an optical film thickness measuring apparatus. Moreover, at least one said vapor deposition chamber and the said laboratory may be comprised so that it may be connected by the data transmission means which transmits the film thickness measurement result in the said laboratory.

FIG. 12 shows an example of a cluster type (sheet type) manufacturing apparatus for realizing a method for manufacturing an organic EL element according to this embodiment. This manufacturing apparatus is comprised so that the double film-forming apparatuses 10 and 20 and the sealing apparatus 30 may be provided, The board | substrate conveyance chamber 41 is provided in succession in the film-forming apparatus 10 of the carrying-in side, and the film-forming apparatus 10 , 20) and the exchange chambers 42 and 43 are successively provided between the sealing apparatus 30, and the discharge chamber 44 is successively provided in the carrying-out side of the sealing apparatus 30, respectively. In the film forming apparatuses 10 and 20, the vacuum transfer robots 11 and 21 are disposed in the center, and a plurality of deposition chambers 12, 13, 14, 22, 23, and 24 are disposed around the vacuum transfer robots 11 and 21. In addition, test chambers (film thickness measurement) 15 and 25 are arrange | positioned in each film-forming apparatus 10 and 20, respectively.

Moreover, the vacuum conveyance robot 31 is arrange | positioned also in the sealing apparatus 30 in the center, The sealing substrate conveyance chamber 32, the test chamber (light emission characteristic measurement) 33, the sealing chamber 34, and the preliminary | surroundings of the surroundings are arrange | positioned. The vacuum chamber 35 is arrange | positioned. The entrances and exits of the vapor deposition chambers 12, 13, 14, 22, 23, and 24, the substrate transfer chamber 41, the exchange chambers 42 and 43, the sealed substrate transfer chamber 32, and the discharge chamber 44, respectively. Is equipped with a vacuum gate (G).

Here, in the film forming apparatuses 10 and 20, the deposition chambers 12, 13, 14, 22, 23, and 24 are formed of organic layers (hole transport layers, light emitting layers (R, G, B), electron transport layers) and an upper electrode, respectively. In order to form into a film, the vacuum vapor deposition apparatus, such as resistance heating type, which has a vapor deposition source which heats and evaporates the vapor deposition material of each layer, is arrange | positioned. Moreover, the optical film thickness measuring apparatus for measuring the laminated film thickness is arrange | positioned in the test room 15 and 25. As shown in FIG. Then, the inspection chamber 15, the deposition chambers 12 to 14 or the inspection chamber 25, and each deposition chamber 22 so that the film thickness setting adjustment of the deposition chamber can be made based on the inspection results in the inspection chambers 15 and 25. 24 are connected by data transmission means (including a transmission line and a transmission and reception apparatus) P. As shown in FIG.

According to such a manufacturing apparatus, the preprocessing process and the wash | cleaned board | substrate (ITO board | substrate) are carried in to the board | substrate conveyance chamber 41, are handed to the vacuum conveyance robot 11 of the film-forming apparatus 10, and this vacuum conveyance robot By the operation of (11), the deposition in the deposition chambers 12, 13, 14 is performed sequentially, and the film thickness measurement of the stacked layers is performed in the inspection chamber 15. In the exchange chamber 42, the vacuum transfer robot 11 on the film forming apparatus 10 side is replaced with the vacuum transfer robot 21 on the film forming apparatus 20 side, and the vacuum transfer is performed on the film forming apparatus 20. By the operation of the robot 21, the deposition in the deposition chambers 22, 23, and 24 are sequentially performed, and the film thickness measurement of the stacked layers is performed in the inspection chamber 25.

Specifically, an example of a film forming process by the manufacturing apparatus will be described. For example, in the film forming apparatus 10, film formation of the first color is performed, and the hole transport layer and the vapor deposition chamber 13 having common colors in the deposition chamber 12 are formed. In the light emitting layer (B), the electron transport layer (B) is deposited in the deposition chamber 14, respectively. And the film-forming adjustment of a chromaticity correction layer is performed by simulation of the luminescence characteristic based on the measurement result (The measurement result in the inspection room 15 is transmitted to the deposition chamber 14, and the film thickness setting in the deposition chamber 14 is carried out. This is done). Thereafter, the substrate is again transported into the deposition chamber 14 or into another deposition chamber (not shown) to form a chromaticity correction layer composed of an electron transport layer according to the adjusted set film thickness.

After that, it is passed to the film forming apparatus 20 to form a second color film. The vapor deposition layer G is deposited in the deposition chamber 22, and the electron transport layer G is subsequently deposited in the deposition chamber 23. It is conveyed to the test chamber 25 after that, and the measurement of a laminated film thickness is performed. And film-forming adjustment of a chromaticity correction layer is performed by simulation of the luminescence characteristic based on the measurement result. Then, it is conveyed back to the vapor deposition chamber 23 or another vapor deposition chamber (not shown), and the chromaticity correction layer which consists of an electron carrying layer is formed according to the adjusted setting film thickness.

And finally, after vapor deposition of the upper electrode is carried out in the vapor deposition chamber 24, it is conveyed to the sealing apparatus 30 via the exchange chamber 43. As shown in FIG. In the sealing apparatus 30, it is conveyed to the test chamber 33 first, and the light emission characteristic is measured there, and it is confirmed that there is no color shift. And the board | substrate with which the organic layer and the upper electrode were formed into a film, and the sealing board carried in from the sealing board | substrate conveyance chamber 32 are conveyed together to the sealing chamber 34, and bonding of both is performed through an adhesive agent. The bonded organic EL panel is carried out of the device through the discharge chamber 44.

In addition, in the above-mentioned example, although the inspection process in the film-forming apparatuses 10 and 20 is performed during the vapor deposition of an electron carrying layer, it is not limited to this, It conveys to the inspection chamber 15 or 25 for each deposition of each layer, and each layer is carried out. The film thickness measured value can be obtained and compared with the set value at the time of film formation to feed back to the setting at the time of vapor deposition at the subsequent lot. At this time, the measurement result in the examination room 15 or 25 is transmitted to each vapor deposition chamber by the data transmission means P. FIG.

Next, the manufacturing apparatus shown in FIG. 13 will be described in detail. FIG. 13 shows an example of an inline type production apparatus for realizing a method for manufacturing an organic EL device according to another embodiment of the present invention. Such an inline type production apparatus deposits a substrate surface while continuously processing and rotating a rotating mechanism such as a roller while moving the substrate in conjunction with these rotating mechanisms. As a result, it is superior to the cluster type manufacturing apparatus of FIG. 12 in that a substrate surface can be formed uniformly and the high throughput of film formation can be obtained.

This manufacturing apparatus is comprised so that it may be equipped with two film-forming apparatuses 10A and 20A and the sealing apparatus 30A provided in parallel (only vapor deposition chamber 25A is provided in connection with the sealing apparatus 30), and these are vacuum The atmosphere (for example, 10 ^{-4-10 -6} Pa) is maintained. Subsequently, 41 A of board | substrate conveyance chambers are provided in succession in the film-forming apparatus 10A of the carry-in side, and exchange chambers 42A and 43A are provided in series between film-forming apparatuses 10A and 20A and 30A, respectively, and are sealed. On the discharge side of the device 30A, a discharge chamber 44A is provided successively. And 15 A of test chambers are arrange | positioned in the side of the exchange chamber 42A in order to measure the film thickness of each film-forming, and 35 A of preliminary deposition chambers are vapor deposition chambers for forming a chromaticity correction layer (electron transport layer), and an exchange chamber It is arrange | positioned to the side part of 43A.

In the film forming apparatuses 10A and 20A, a plurality of deposition chambers 12A, 13A, 14A, and 22A, 23A, 24A are arranged in succession, and the deposition source as a linear source for uniformly depositing the substrate surface in each deposition chamber. (S1 to S6) are arranged at the center, respectively. Similarly, 25 A of test chambers in which film-forming source S7 is arrange | positioned in the center are provided in connection with 30 A of sealing devices. In addition, in the sealing apparatus 30A, 33 A of test chambers and 34 A of sealing chambers are arrange | positioned in succession, the board | substrate is inserted from the side of the sealing chamber 34A, and the board | substrate is bonded by 34 A of sealing chambers.

Here, in the film forming apparatuses 10A and 20A, the vapor deposition chambers 12A, 13A, 14A, 22A, 23A, and 24A are used for forming organic layers (hole transport layers, light emitting layers R, G, B, and electron transport layers), respectively. The vapor deposition chamber 25A is for forming an upper electrode. In each of these vapor deposition chambers, a vacuum vapor deposition apparatus such as a resistance heating type having vapor deposition sources S1 to S7 for heating and evaporating the vapor deposition material of each layer is disposed. Moreover, the optical film thickness measuring apparatus for measuring the laminated | stacked film thickness is arrange | positioned in 15 A of test rooms. Then, the inspection chamber 15A, the deposition chambers 12A, 13A, 14A, 22A, 23A, 24A, 25A, and the preliminary deposition chamber so that the film thickness setting adjustment of the deposition chamber can be made based on the inspection result in the inspection chamber 15A. 35A is connected to data transmission means (including a transmission line and a transmission and reception apparatus) PA.

According to such a manufacturing apparatus, the board | substrate (ITO board | substrate) which the pretreatment process and the washing | cleaning completed is carried in to 41 A of board | substrate conveyance chambers, and the wire (not shown) interlocked with the rotating mechanism (not shown) of film-forming apparatus 10A. The substrate is disposed on the substrate, and the vapor deposition in the deposition chambers 12A, 13A, and 14A is sequentially performed by the operation of the rotary mechanism. After that, the rotary mechanism is reversely operated to convey the substrate to the inspection chamber 15A. The film thickness measurement of the layer laminated | stacked in this inspection room 15A is performed (refer the solid lines 10 and 11 of the same figure).

Subsequently, the substrate is conveyed into the film forming apparatus 20A through the exchange chamber 42A, and the substrate is disposed on a wire (not shown) interlocked with a rotating mechanism (not shown) of the film forming apparatus 20A. By operation of the rotating mechanism, vapor deposition is performed in the vapor deposition chambers 22A, 23A, and 24A sequentially. Subsequently, the rotating mechanism reverses operation, conveys the substrate to the inspection chamber 15A, and measures the film thickness of the layer laminated in the inspection chamber 15A (see the solid line 12 in the figure). In addition, when inspection is unnecessary after vapor deposition in vapor deposition chamber 22A, 23A, 24A, a board | substrate is conveyed to 43 A of exchange chambers (refer the solid line 13 of the figure).

And after the upper electrode is formed into a film, the board | substrate conveyed into the vapor deposition chamber 25A through 43 A of exchange chambers is conveyed into 30 A of sealing devices, and light emission characteristic is examined by the test chamber 33A. Then, it seals through the sealing board inserted from the side in the sealing chamber 34A, and the adhesive agent, and discharges from the discharge chamber 44A as an organic EL panel (refer the solid lines 14 and 15 of the figure). .

Next, the example of the film-forming process by this manufacturing apparatus is demonstrated concretely. Most of the general board | substrates go through the film-forming process and the sealing process by the procedure mentioned above (it refers to the route shown by the solid line 10-15. Hereinafter, these are called a "normal route").

For example, a substrate on which a base layer (flattening film or insulating film) and a lower electrode are formed on a substrate such as ITO by a pretreatment step is carried into the substrate transfer chamber 41A and proceeds to the film forming step by the film forming apparatus 10A. In the deposition chambers 12A, 13A, and 14A of the film forming apparatus 10A, the hole injection layer, the hole transport layer, and the light emitting layer B are respectively formed by the film forming sources S1 to S3.

Then, the board | substrate is conveyed to 15 A of test chambers, the film thickness of the laminated film formed on the lower electrode is measured, and when the film thickness is an appropriate value, it is conveyed to film-forming apparatus 20A through 42 A of exchange chambers. Subsequently, in the deposition chambers 22A, 23A, and 24A of the film forming apparatus 20A, the light emitting layer G, the light emitting layer R, and the electron transporting layer are respectively formed by the film forming sources S4 to S6.

 Subsequently, the substrate is conveyed to the deposition chamber 25A through the exchange chamber 43A, the upper electrode is formed by the film forming source S7, and then conveyed to the test chamber 33A to inspect the light emission characteristics, and the sealing chamber. It seals by bonding with the sealing substrate inserted from the side of 34A. Then, the substrate is discharged out of the apparatus from the discharge chamber 44A.

Thus, the board | substrate which passed through the pretreatment process S1 carries out the inspection process at least once before forming the upper electrode of a film-forming process by the normal route shown by the solid lines 10-15. On the other hand, in the said normal route, although the example in which the inspection process is performed after forming the light emitting layer B of the vapor deposition chamber 14A was shown, the inspection process is not limited to this, but it is many times (for example, every inspection | inspection). Film formation).

Next, the film thickness adjustment by feedback FB is demonstrated using FIG. Since the same thing as the normal route mentioned above is overlapped, the description is abbreviate | omitted. Usually, the board | substrate with which the hole injection layer was formed in 12 A of vapor deposition chambers by the route is conveyed to 15 A of test chambers, and the film thickness of the laminated film formed into a film is measured. When it is judged that the film thickness is not in the proper film thickness state, the film is returned to the deposition chamber 12A again, and the hole injection layer is formed again on the film-formed hole injection layer so as to be in the proper film thickness state (dashed line 20 ) Reference). Then, the deposition chambers 13A to 14A and 22A to 24A are then similarly formed in each deposition chamber and then returned to the inspection chamber 15A to determine whether the film thickness of each deposition is appropriate or not. If not, it is conveyed to the same vapor deposition chamber again and redeposited so that it may become an appropriate film thickness (refer to broken line 21). For each film formation, when an optimum film thickness state is formed, these substrates usually form an upper electrode in the same way as the root, go through a sealing process, and are discharged out of the apparatus.

Thus, since the inspection process is performed for every film formation or as needed, the film thickness which was formed is vapor-deposited again, and it can form into a suitable film thickness state (feedback FB). In addition, even after the next lot, the deposition amount can be adjusted so as to be in a suitable film thickness state by the first deposition.

Next, the film thickness adjustment by feedforward FF is demonstrated using FIG. Since the same thing as the above-mentioned normal route is overlapped, the description is abbreviate | omitted. Usually, the board | substrate formed into the electron carrying layer by the route (normal solid line 10-12 of a route) is conveyed to 15 A of test chambers, and the total film thickness of the laminated film is measured. As a result, when it is judged that it is formed thinner than the appropriate film thickness state, a board | substrate is conveyed to 35 A of preliminary deposition chambers through 43 A of exchange chambers. In the preliminary vapor deposition chamber 35A, the electron transport layer deposits a substantial amount of the film thickness so as to be in an appropriate film thickness state (see the broken line 30).

Subsequently, the substrate is conveyed to the deposition chamber 25A through the exchange chamber 43A, and the upper electrode is formed, proceeds to the sealing process (see the broken line 31), and after being sealed, usually the same as the root 15 In this way, it is discharged out of the apparatus.

As described above, in the film forming step, the test step is performed in the test chamber 15A before the upper electrode is formed, and the appropriate film is formed by depositing the chromaticity correction layer of the electron transport layer in the preliminary deposition chamber 35A (feed forward FF). It may be in a thickness state.

In addition, the inspection process of the above-mentioned example is not limited to the said content, It conveys to 15 A of test | inspection chambers (if necessary, you may provide a some test chamber) for every deposition of each layer, and obtains the film thickness measured value of each layer, By comparing this with the set value at the time of film formation, the feedback (FB) and the feed forward (FF) can also be performed at the setting at the time of deposition in the subsequent lot. At this time, the measurement result in the inspection chamber 15A is transmitted to each deposition chamber by the data transmission means PA.

And as a manufacturing apparatus of the organic electroluminescent element of embodiment of this invention, although the cluster type manufacturing apparatus (FIG. 12) and the inline type manufacturing apparatus (FIG. 13) were demonstrated, in this invention, it is not limited to these, It is a cluster type | mold. The complex type manufacturing apparatus which connected the manufacturing apparatus and the inline type manufacturing apparatus may be sufficient. Specifically, the sealing apparatus 30A of the inline type manufacturing apparatus shown in FIG. 13 is provided through the exchange chamber 43 so that it may be provided in series with the film-forming apparatuses 10 and 20 of the cluster type manufacturing apparatus shown in FIG. Etc. can be mentioned. In the case of such a composite type manufacturing apparatus, not only the sealing apparatus is limited to the inline type, but how to arrange the cluster type and the inline type is appropriately determined according to various conditions such as the film thickness to be formed and the installation location.

Hereinafter, the example of the sealing process of the above-mentioned sealing apparatus 30, 30A is demonstrated concretely.

In the case of airtight sealing with a sealing member, an appropriate amount (about 0.1 to 0.5% by weight) of a spacer having a particle diameter of 1 to 300 μm (preferably a spacer of glass or plastic) is mixed with an adhesive made of an ultraviolet curable epoxy resin, and the organic EL It is apply | coated using the dispenser etc. to the place corresponding to the side wall of the sealing substrate on an element formation substrate. Subsequently, the inside of the sealing chamber 34 is made into inert gas atmosphere, such as argon gas, and the sealing substrate is made to contact an organic electroluminescent element formation board | substrate through an adhesive agent. Subsequently, ultraviolet rays are irradiated to the adhesive from the organic EL element formation substrate side (or the sealing substrate side) and cured. In this way, the organic EL element is sealed and sealed in a state in which an inert gas such as argon gas is trapped in the sealing space between the sealing substrate and the organic EL element formation substrate.

In the case of filling sealing with a sealing member, a thermosetting resin, a photocurable resin, an elastomer, or the like is applied on a sealing substrate with a dispenser or the like, or a sheet-type thermosetting resin, a photocurable resin, an elastomer or the like is laminated on the sealing substrate. . Thereafter, the sealing substrate and the organic EL element formation substrate are bonded together under conditions such as heating in a vacuum to be hardened and bonded. In this way, a sealing member made of resin or sheet resin is filled in the sealing space between the sealing substrate and the organic EL element formation substrate to seal and prevent the organic EL element. At this time, not only the sealing substrate side but also the organic EL element formation substrate side may be apply | coated resin or laminating sheet-like resin.

Furthermore, in the case of sealing and sealing with a sealing film, an organic material such as a photocurable resin is applied as a buffer layer by spin coating to an organic EL element formation substrate on which an upper electrode is formed after the inspection step, and irradiated with ultraviolet rays to cure it. Let's do it. Subsequently, an inorganic material of SiO ₂ is formed as a barrier layer by sputtering. Thereafter, the buffer layer of the photocurable resin and the barrier layer of SiO ₂ are alternately laminated and sealed. At this time, the sealing film may be formed by laminating a single layer film or a plurality of protective films. The material to be used may be either inorganic or organic. Specifically, inorganic materials include nitrides such as SiN, AlN and GaN, oxides such as SiO ₂ , Al ₂ O ₃ , Ta ₂ O ₅ , ZnO, GeO, and SiON. Oxynitrides such as oxynitrides, carbides such as SiCN, metal fluorine compounds, metal films and the like. Examples of the organic substance include fluorine-based polymers such as epoxy resins, acrylic resins, polyparaxylenes, perfluoroolefins, and perfluoroethers, metal alkoxides such as CH ₃ OM and C ₂ H ₅ OM, polyimide precursors, and perylene-based compounds. Can be mentioned. In the embodiment of the present invention, in addition to the above, the selection of lamination and materials can be appropriately selected depending on the design of the organic EL device.

On the other hand, the film forming process according to the embodiment of the present invention is not limited to the above-described deposition, and if the film forming method is capable of adjusting the film thickness, in addition to the coating method such as the spin coating method and the dipping method, printing such as the screen printing method and the ink jet method, etc. Wet processes, such as a law, may be sufficient.

Next, the organic layer of embodiment of this invention is demonstrated in detail. As described above, the organic layer is generally a combination of a hole transport layer, a light emitting layer, and an electron transport layer. However, the hole transport layer, the light emitting layer, and the electron transport layer may be laminated not only in one layer but also in several layers. In addition, one or both of the hole transport layer and the electron transport layer may be omitted, and furthermore, an organic layer such as a carrier block layer and the like may be inserted in addition to the hole injection layer and the electron injection layer. For the above design change, the increase and decrease of the deposition chamber is appropriately made.

In addition, each layer mentioned above can select suitably the material (regardless of a high molecular material and a low molecular material) conventionally used. In the light emitting material, there are light emission (fluorescence) when returning to the ground state from the singlet excited state and light emission (phosphorescence) when returning to the ground state from the triplet excited state, but in which embodiment of the present invention, It is also possible to use a light emitting material.

And embodiment of this invention does not specifically limit the form of organic electroluminescent element. For example, the bottom emission method which extracts light from the board | substrate side, the top emission system which extracts light from the board | substrate, and the reverse side may be sufficient, and as a panel drive system, active drive or passive drive may be sufficient as it. On the other hand, the bottom emission method corrects the organic layer, and in the top emission method, in addition to the organic layer, a chromaticity correction layer for correcting the transparent upper electrode is formed.

According to embodiment or Example of this invention demonstrated above, in the manufacturing process of organic electroluminescent element, the inspection process is performed from the pretreatment process until the upper electrode formation of a film-forming process, the film thickness of a lower electrode, an organic layer, etc. are measured, By performing simulation calculation from the measurement result and performing film thickness correction by subsequent film formation, the organic EL element which does not produce chromaticity shift can be formed. As a result, in the prior art, it is judged that the color shift due to film formation is also defective, and the organic EL device that has been excluded can be manufactured as a good product, thereby eliminating the process loss seen in the prior art and at the same time yielding a product. Can improve.

In addition, in the manufacturing method or the manufacturing apparatus of the organic electroluminescent element which concerns on embodiment of this invention, since the film thickness of a lower electrode etc. is measured directly after a pretreatment process, or the film thickness of the formed organic layer is directly taken in the middle of film-forming. Since it is measuring, even if film-forming itself is not made with high precision, the film thickness of the final organic layer can be matched with a set film thickness with high precision, and the organic electroluminescent element which does not have a chromaticity shift can be obtained.

Furthermore, by directly measuring the lower electrode or the organic layer using optical film thickness measurement, not only the film thickness but also the refractive index and the light absorption characteristic can be obtained, and the color shift can be predicted by the simulation calculation in consideration of the inspection process. Chromaticity shift can be effectively eliminated by film formation of a later chromaticity correction layer.

In addition, since the measured value data of each layer can be fed back as a setting for the formation of each layer in the next lot, even if a film formation failure occurs in one lot, it is not possible to form a film formation failure of the same lot in a subsequent lot. To prevent it.

Furthermore, by connecting the laboratory and the deposition chamber for measuring the film thickness with data transmission means, the film thickness measurement result can be fed back or feedforward as the film thickness setting in the deposition chamber, and the film thickness setting can be automated. .

Claims (18)

A pretreatment step of forming at least a lower electrode on a substrate, a film formation step of forming an organic layer and an upper electrode having at least an organic light emitting functional layer on the lower electrode after the pretreatment step, and the organic layer and the upper electrode after the film formation step In the manufacturing method of the organic electroluminescent element containing the sealing process which seals | seals, The film forming step includes an inspection step of inspecting a film thickness of the lower electrode or a film thickness of a layer formed on the lower electrode, and a process of forming a layer of adjusting the chromaticity of the emission color of the organic EL element after the inspection step. Including, The film thickness of the layer which adjusts chromaticity of the light emission color of the said organic electroluminescent element adjusts the peak wavelength of the light emission color of the said organic electroluminescent element, The manufacturing method of the organic electroluminescent element characterized by the above-mentioned. delete The chromaticity of the light emission color of the organic EL device including the layer for adjusting the chromaticity of the light emission color of the organic EL device is the lower electrode, the organic layer and the upper electrode having a set film thickness. The organic electroluminescent element manufacturing method characterized by matching the chromaticity of the light emission color of organic electroluminescent element. The film thickness of the layer which adjusts chromaticity of the light emission color of the said organic electroluminescent element is said lower part which has a set film thickness in simulation of the light emission characteristic of the said organic electroluminescent element based on the test result of the said inspection process. A method for manufacturing an organic EL device, characterized in that it is set to a film thickness that matches the chromaticity of the emission color of the organic EL device including an electrode, the organic layer, and the upper electrode. The method of claim 4, wherein the organic layer comprises a plurality of layers, In the film forming step, the inspection step of inspecting the first layer after forming the first layer among the plurality of layers of the organic layer is performed, The film thickness of the layer which adjusts the chromaticity of the emission color of the said organic electroluminescent element laminated | stacked on the said 1st layer based on the test result of the said inspection process is set, The manufacturing method of the organic electroluminescent element characterized by the above-mentioned. The said inspection process is a 1st inspection process, The film forming step includes a second inspection step, In the second inspection step, the film thickness of the lower electrode is inspected before the film formation of the organic layer. The method for manufacturing an organic EL device according to claim 6, wherein the inspection step is performed by using an optical film thickness measurement method. delete delete delete delete In the manufacturing apparatus of the organic electroluminescent element provided with the film-forming apparatus which forms the upper electrode and the organic layer which has an organic light emitting functional layer at least on the said lower electrode after the preprocessing process which forms at least a lower electrode on a board | substrate, The film forming apparatus includes a film forming chamber including carrying-in means for carrying in the substrate after the pretreatment step during the film forming process, a film forming means for forming an organic layer on the substrate, and a conveying means for carrying the substrate between the film forming chambers; A laboratory having film thickness measuring means for measuring a film thickness of a layer deposited on the substrate in the film deposition chamber, The film forming chamber and the test chamber are connected to data transmitting means for transmitting the film thickness measurement result in the test chamber to the film forming chamber. In the film formation chamber, a layer for adjusting the chromaticity of the emission color of the organic EL element is formed at the film thickness set based on the measurement result by the film thickness measurement means, The film thickness of the layer which adjusts chromaticity of the light emission color of the said organic electroluminescent element adjusts the peak wavelength of the light emission color of the said organic electroluminescent element, The manufacturing apparatus of the organic electroluminescent element characterized by the above-mentioned. delete The chromaticity of the emission color of the organic EL element having the layer for adjusting the chromaticity of the emission color of the organic EL element is the organic including the lower electrode, the organic layer and the upper electrode having a set film thickness. The manufacturing apparatus of the organic electroluminescent element characterized by the chromaticity of the emission color of an electroluminescent element. 15. The lower electrode according to claim 14, wherein the film thickness of the layer for adjusting the chromaticity of the light emission color of the organic EL device is a lower film having a set film thickness in simulation of the light emission characteristics of the organic EL device based on a test result of the laboratory. And a film thickness suitable for chromaticity of the emission color of the organic EL element including the organic layer and the upper electrode. The apparatus for manufacturing an organic EL device according to claim 15, wherein the test chamber measures the film thickness of at least one of the lower electrode and the organic layer by the film thickness measuring means. 17. The apparatus for producing an organic EL element according to claim 16, wherein the film thickness measuring means includes an optical film thickness measuring device. The manufacturing apparatus of the organic electroluminescent element of Claim 12 is cluster type, an inline type, or these composite types, The manufacturing apparatus of the organic electroluminescent element characterized by the above-mentioned.

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