KR101154748B1 - 향상된 전자이동 신뢰성을 가지는 상호접속 구조체 및 그 제조 방법 - Google Patents

향상된 전자이동 신뢰성을 가지는 상호접속 구조체 및 그 제조 방법 Download PDF

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KR101154748B1
KR101154748B1 KR1020097009408A KR20097009408A KR101154748B1 KR 101154748 B1 KR101154748 B1 KR 101154748B1 KR 1020097009408 A KR1020097009408 A KR 1020097009408A KR 20097009408 A KR20097009408 A KR 20097009408A KR 101154748 B1 KR101154748 B1 KR 101154748B1
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dielectric material
liner
conductive
interconnect structure
diffusion boundary
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KR20090080514A (ko
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치차오 양
핑추안 왕
윤유 왕
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인터내셔널 비지네스 머신즈 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76847—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned within the main fill metal
    • H10D64/011—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020097009408A 2006-11-15 2007-09-10 향상된 전자이동 신뢰성을 가지는 상호접속 구조체 및 그 제조 방법 Expired - Fee Related KR101154748B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/560,044 US7569475B2 (en) 2006-11-15 2006-11-15 Interconnect structure having enhanced electromigration reliability and a method of fabricating same
US11/560,044 2006-11-15

Publications (2)

Publication Number Publication Date
KR20090080514A KR20090080514A (ko) 2009-07-24
KR101154748B1 true KR101154748B1 (ko) 2012-06-08

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Country Status (6)

Country Link
US (2) US7569475B2 (enExample)
EP (1) EP2095409A4 (enExample)
JP (1) JP5274475B2 (enExample)
KR (1) KR101154748B1 (enExample)
CN (1) CN101536170A (enExample)
WO (1) WO2008060745A1 (enExample)

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US8772156B2 (en) * 2008-05-09 2014-07-08 International Business Machines Corporation Methods of fabricating interconnect structures containing various capping materials for electrical fuse and other related applications
US9024431B2 (en) 2009-10-29 2015-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor die contact structure and method
US8487447B2 (en) 2011-05-19 2013-07-16 International Business Machines Corporation Semiconductor structure having offset passivation to reduce electromigration
US9029260B2 (en) * 2011-06-16 2015-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling method for dual damascene process
FR2979751A1 (fr) * 2011-09-02 2013-03-08 St Microelectronics Crolles 2 Element metallique d'interconnexion dans une puce de circuit integre et procede de realisation
US8796853B2 (en) 2012-02-24 2014-08-05 International Business Machines Corporation Metallic capped interconnect structure with high electromigration resistance and low resistivity
US9190348B2 (en) 2012-05-30 2015-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Scheme for connector site spacing and resulting structures
KR101985937B1 (ko) 2012-07-11 2019-06-05 삼성전자주식회사 반도체 장치 및 그 제조방법
US8835305B2 (en) 2012-07-31 2014-09-16 International Business Machines Corporation Method of fabricating a profile control in interconnect structures
US9659869B2 (en) * 2012-09-28 2017-05-23 Intel Corporation Forming barrier walls, capping, or alloys /compounds within metal lines
KR102057067B1 (ko) 2013-01-29 2019-12-18 삼성전자주식회사 반도체 장치의 배선 구조체 및 그 형성 방법
JP2015060918A (ja) * 2013-09-18 2015-03-30 株式会社東芝 半導体装置
US9362239B2 (en) * 2014-10-21 2016-06-07 Globalfoundries Inc. Vertical breakdown protection layer
US9431343B1 (en) * 2015-03-11 2016-08-30 Samsung Electronics Co., Ltd. Stacked damascene structures for microelectronic devices
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US9754883B1 (en) 2016-03-04 2017-09-05 International Business Machines Corporation Hybrid metal interconnects with a bamboo grain microstructure
US9865538B2 (en) 2016-03-09 2018-01-09 International Business Machines Corporation Metallic blocking layer for reliable interconnects and contacts
US9837350B2 (en) 2016-04-12 2017-12-05 International Business Machines Corporation Semiconductor interconnect structure with double conductors
KR102654482B1 (ko) * 2016-12-06 2024-04-03 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US10453749B2 (en) * 2017-02-14 2019-10-22 Tokyo Electron Limited Method of forming a self-aligned contact using selective SiO2 deposition
WO2018163020A1 (ja) * 2017-03-10 2018-09-13 株式会社半導体エネルギー研究所 導電体、導電体の作製方法、半導体装置、および半導体装置の作製方法
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US10515903B2 (en) * 2018-05-18 2019-12-24 International Business Machines Corporation Selective CVD alignment-mark topography assist for non-volatile memory
US11004794B2 (en) * 2018-06-27 2021-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereof
US10910307B2 (en) * 2018-11-02 2021-02-02 International Business Machines Corporation Back end of line metallization structure
US10840185B2 (en) * 2019-03-05 2020-11-17 Texas Instruments Incorporated Semiconductor device with vias having a zinc-second metal-copper composite layer
US11004791B2 (en) * 2019-04-12 2021-05-11 Advanced Micro Devices, Inc. Semiconductor chip with stacked conductor lines and air gaps
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Publication number Publication date
EP2095409A1 (en) 2009-09-02
US20080111239A1 (en) 2008-05-15
CN101536170A (zh) 2009-09-16
EP2095409A4 (en) 2014-05-21
KR20090080514A (ko) 2009-07-24
JP5274475B2 (ja) 2013-08-28
US20090289368A1 (en) 2009-11-26
JP2010519723A (ja) 2010-06-03
WO2008060745A1 (en) 2008-05-22
US8138083B2 (en) 2012-03-20
US7569475B2 (en) 2009-08-04

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