WO2004088745A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2004088745A1
WO2004088745A1 PCT/JP2003/004049 JP0304049W WO2004088745A1 WO 2004088745 A1 WO2004088745 A1 WO 2004088745A1 JP 0304049 W JP0304049 W JP 0304049W WO 2004088745 A1 WO2004088745 A1 WO 2004088745A1
Authority
WO
WIPO (PCT)
Prior art keywords
hollow part
semiconductor device
barrier metal
metal layer
insulation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2003/004049
Other languages
English (en)
French (fr)
Inventor
Kenichi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2004570148A priority Critical patent/JP4272168B2/ja
Priority to EP03715631.2A priority patent/EP1610376B1/en
Priority to PCT/JP2003/004049 priority patent/WO2004088745A1/ja
Priority to AU2003220989A priority patent/AU2003220989A1/en
Priority to CNB038258927A priority patent/CN100341135C/zh
Publication of WO2004088745A1 publication Critical patent/WO2004088745A1/ja
Priority to US11/084,014 priority patent/US7923806B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76847—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned within the main fill metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

　銅配線におけるボイドの成長を抑制することのできる半導体装置を提供する。　半導体装置は、半導体基板と、前記半導体基板の上方に形成された絶縁層と、前記絶縁層に埋め込まれた第１ダマシン配線であって、底面および側面を画定し、内側に第１中空部を画定するバリアメタル層と、該第１中空部内に配置され､内側に第２中空部を画定する､銅配線層と､該第２中空部内に配置され､前記バリアメタル層とは分離されている補助バリアメタル層とを含む第１ダマシン配線と、前記第１ダマシン配線と絶縁層との上に配置された絶縁性銅拡散防止膜と、を有するを含む。
PCT/JP2003/004049 2003-03-28 2003-03-28 半導体装置 Ceased WO2004088745A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004570148A JP4272168B2 (ja) 2003-03-28 2003-03-28 半導体装置及び半導体集積回路装置
EP03715631.2A EP1610376B1 (en) 2003-03-28 2003-03-28 Semiconductor device
PCT/JP2003/004049 WO2004088745A1 (ja) 2003-03-28 2003-03-28 半導体装置
AU2003220989A AU2003220989A1 (en) 2003-03-28 2003-03-28 Semiconductor device
CNB038258927A CN100341135C (zh) 2003-03-28 2003-03-28 半导体装置
US11/084,014 US7923806B2 (en) 2003-03-28 2005-03-21 Embedded wiring in copper damascene with void suppressing structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2003/004049 WO2004088745A1 (ja) 2003-03-28 2003-03-28 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/084,014 Continuation US7923806B2 (en) 2003-03-28 2005-03-21 Embedded wiring in copper damascene with void suppressing structure

Publications (1)

Publication Number Publication Date
WO2004088745A1 true WO2004088745A1 (ja) 2004-10-14

Family

ID=33105330

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2003/004049 Ceased WO2004088745A1 (ja) 2003-03-28 2003-03-28 半導体装置

Country Status (6)

Country Link
US (1) US7923806B2 (ja)
EP (1) EP1610376B1 (ja)
JP (1) JP4272168B2 (ja)
CN (1) CN100341135C (ja)
AU (1) AU2003220989A1 (ja)
WO (1) WO2004088745A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005057277A (ja) * 2003-08-04 2005-03-03 Samsung Electronics Co Ltd ボイド発生が防止される金属配線構造及び金属配線方法
JP2013089736A (ja) * 2011-10-17 2013-05-13 Fujitsu Ltd 電子装置およびその製造方法
US8836122B2 (en) 2008-06-18 2014-09-16 Fujitsu Limited Semiconductor device having copper wiring with increased migration resistance

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8004087B2 (en) * 2004-08-12 2011-08-23 Nec Corporation Semiconductor device with dual damascene wirings and method for manufacturing same
JP4535845B2 (ja) * 2004-10-29 2010-09-01 富士通セミコンダクター株式会社 半導体装置
US7602068B2 (en) * 2006-01-19 2009-10-13 International Machines Corporation Dual-damascene process to fabricate thick wire structure
US7569475B2 (en) * 2006-11-15 2009-08-04 International Business Machines Corporation Interconnect structure having enhanced electromigration reliability and a method of fabricating same
JP5147249B2 (ja) * 2007-01-31 2013-02-20 オンセミコンダクター・トレーディング・リミテッド 半導体装置の製造方法
FR2979751A1 (fr) * 2011-09-02 2013-03-08 St Microelectronics Crolles 2 Element metallique d'interconnexion dans une puce de circuit integre et procede de realisation
US9030013B2 (en) 2012-09-21 2015-05-12 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structures comprising flexible buffer layers
US9496173B2 (en) * 2013-12-20 2016-11-15 Intel Corporation Thickened stress relief and power distribution layer
US10438909B2 (en) * 2016-02-12 2019-10-08 Globalfoundries Singapore Pte. Ltd. Reliable passivation for integrated circuits
US10840185B2 (en) * 2019-03-05 2020-11-17 Texas Instruments Incorporated Semiconductor device with vias having a zinc-second metal-copper composite layer

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275612A (ja) 1993-03-19 1994-09-30 Fujitsu Ltd 集積回路装置の製造方法
EP0881673A2 (en) 1997-05-30 1998-12-02 International Business Machines Corporation Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity
US5850120A (en) * 1995-07-07 1998-12-15 Nec Corporation Electron gun with a gamma correct field emission cathode
JPH11102911A (ja) 1997-07-31 1999-04-13 Matsushita Electron Corp 半導体装置及びその製造方法
JP2001110809A (ja) 1999-10-04 2001-04-20 Toshiba Corp 半導体装置
US20010038147A1 (en) 1998-01-13 2001-11-08 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method and semiconductor device
US20020036348A1 (en) * 2000-09-26 2002-03-28 Kabushiki Kaisha Toshiba Semiconductor device having multi-layered wiring structure
JP2003031574A (ja) * 2001-07-13 2003-01-31 Toshiba Corp 半導体装置およびその製造方法

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US5380546A (en) * 1993-06-09 1995-01-10 Microelectronics And Computer Technology Corporation Multilevel metallization process for electronic components
JP3323055B2 (ja) 1996-04-03 2002-09-09 株式会社東芝 半導体装置およびその製造方法
JP3304754B2 (ja) * 1996-04-11 2002-07-22 三菱電機株式会社 集積回路の多段埋め込み配線構造
US6130161A (en) 1997-05-30 2000-10-10 International Business Machines Corporation Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity
US6010960A (en) * 1997-10-29 2000-01-04 Advanced Micro Devices, Inc. Method and system for providing an interconnect having reduced failure rates due to voids
US6017803A (en) * 1998-06-24 2000-01-25 Chartered Semiconductor Manufacturing, Ltd. Method to prevent dishing in chemical mechanical polishing
US6218302B1 (en) * 1998-07-21 2001-04-17 Motorola Inc. Method for forming a semiconductor device
US6083835A (en) * 1998-07-24 2000-07-04 Taiwan Semiconductor Manufacturing Company Self-passivation of copper damascene
JP2943805B1 (ja) * 1998-09-17 1999-08-30 日本電気株式会社 半導体装置及びその製造方法
US6245663B1 (en) * 1998-09-30 2001-06-12 Conexant Systems, Inc. IC interconnect structures and methods for making same
JP2000183003A (ja) * 1998-10-07 2000-06-30 Toshiba Corp 銅系金属用研磨組成物および半導体装置の製造方法
JP4044236B2 (ja) 1999-03-11 2008-02-06 株式会社東芝 半導体装置の製造方法
US6319825B1 (en) * 1999-05-12 2001-11-20 Dongbu Electronics Co., Ltd. Metallization process of semiconductor device
US6147404A (en) * 1999-05-24 2000-11-14 Advanced Micro Devices, Inc. Dual barrier and conductor deposition in a dual damascene process for semiconductors
JP2001060589A (ja) 1999-08-20 2001-03-06 Matsushita Electronics Industry Corp 半導体装置の製造方法
US6433429B1 (en) * 1999-09-01 2002-08-13 International Business Machines Corporation Copper conductive line with redundant liner and method of making
US6114243A (en) * 1999-11-15 2000-09-05 Chartered Semiconductor Manufacturing Ltd Method to avoid copper contamination on the sidewall of a via or a dual damascene structure
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Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275612A (ja) 1993-03-19 1994-09-30 Fujitsu Ltd 集積回路装置の製造方法
US5850120A (en) * 1995-07-07 1998-12-15 Nec Corporation Electron gun with a gamma correct field emission cathode
EP0881673A2 (en) 1997-05-30 1998-12-02 International Business Machines Corporation Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity
JPH11102911A (ja) 1997-07-31 1999-04-13 Matsushita Electron Corp 半導体装置及びその製造方法
US20010038147A1 (en) 1998-01-13 2001-11-08 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method and semiconductor device
JP2001110809A (ja) 1999-10-04 2001-04-20 Toshiba Corp 半導体装置
US20020036348A1 (en) * 2000-09-26 2002-03-28 Kabushiki Kaisha Toshiba Semiconductor device having multi-layered wiring structure
JP2003031574A (ja) * 2001-07-13 2003-01-31 Toshiba Corp 半導体装置およびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1610376A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005057277A (ja) * 2003-08-04 2005-03-03 Samsung Electronics Co Ltd ボイド発生が防止される金属配線構造及び金属配線方法
US8836122B2 (en) 2008-06-18 2014-09-16 Fujitsu Limited Semiconductor device having copper wiring with increased migration resistance
JP2013089736A (ja) * 2011-10-17 2013-05-13 Fujitsu Ltd 電子装置およびその製造方法

Also Published As

Publication number Publication date
CN100341135C (zh) 2007-10-03
EP1610376A1 (en) 2005-12-28
JPWO2004088745A1 (ja) 2006-07-06
EP1610376A4 (en) 2009-04-29
US7923806B2 (en) 2011-04-12
CN1735964A (zh) 2006-02-15
US20050161825A1 (en) 2005-07-28
JP4272168B2 (ja) 2009-06-03
AU2003220989A1 (en) 2004-10-25
EP1610376B1 (en) 2014-10-15

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