KR101142412B1 - 플라즈마처리장치 - Google Patents

플라즈마처리장치 Download PDF

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Publication number
KR101142412B1
KR101142412B1 KR1020100069324A KR20100069324A KR101142412B1 KR 101142412 B1 KR101142412 B1 KR 101142412B1 KR 1020100069324 A KR1020100069324 A KR 1020100069324A KR 20100069324 A KR20100069324 A KR 20100069324A KR 101142412 B1 KR101142412 B1 KR 101142412B1
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South Korea
Prior art keywords
faraday shield
high frequency
processing chamber
induction antenna
vacuum processing
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English (en)
Korean (ko)
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KR20110132508A (ko
Inventor
유사쿠 삿카
료지 니시오
겐 요시오카
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/463—Microwave discharges using antennas or applicators

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020100069324A 2010-06-02 2010-07-19 플라즈마처리장치 Active KR101142412B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-126411 2010-06-02
JP2010126411A JP5656458B2 (ja) 2010-06-02 2010-06-02 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20110132508A KR20110132508A (ko) 2011-12-08
KR101142412B1 true KR101142412B1 (ko) 2012-05-11

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KR1020100069324A Active KR101142412B1 (ko) 2010-06-02 2010-07-19 플라즈마처리장치

Country Status (3)

Country Link
US (1) US8940128B2 (https=)
JP (1) JP5656458B2 (https=)
KR (1) KR101142412B1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5711953B2 (ja) * 2010-12-13 2015-05-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9490106B2 (en) 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
US9293353B2 (en) * 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
WO2013099372A1 (ja) * 2011-12-27 2013-07-04 キヤノンアネルバ株式会社 放電容器及びプラズマ処理装置
SG2013075437A (en) * 2012-10-23 2014-05-29 Lam Res Corp Faraday shield having plasma density decouplingstructure between tcp coil zones
US9029267B2 (en) 2013-05-16 2015-05-12 Lam Research Corporation Controlling temperature of a faraday shield
US9885493B2 (en) 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same
JP6282128B2 (ja) * 2014-02-05 2018-02-21 株式会社日立ハイテクノロジーズ プラズマ処理装置及びｆｓｖの制御方法
JP6277055B2 (ja) * 2014-04-25 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10896806B2 (en) * 2016-11-03 2021-01-19 En2Core Technology, Inc. Inductive coil structure and inductively coupled plasma generation system
US20180358206A1 (en) * 2017-06-09 2018-12-13 Mattson Technology, Inc. Plasma Processing Apparatus
US11521828B2 (en) * 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source
US10264663B1 (en) * 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
JP7080786B2 (ja) * 2018-09-28 2022-06-06 株式会社ダイヘン プラズマ発生装置
US11056321B2 (en) * 2019-01-03 2021-07-06 Lam Research Corporation Metal contamination reduction in substrate processing systems with transformer coupled plasma
CN110491760B (zh) * 2019-08-23 2020-09-15 江苏鲁汶仪器有限公司 一种法拉第清洗装置及等离子体处理系统
US12374530B2 (en) * 2019-08-28 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing apparatus for generating plasma
CN111799197B (zh) * 2020-07-27 2025-11-25 上海邦芯半导体科技有限公司 感性耦合反应器及其工作方法
US12597588B2 (en) * 2023-05-17 2026-04-07 Applied Materials, Inc. Inductively coupled plasma apparatus with novel faraday shield

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243362A (ja) * 2002-02-15 2003-08-29 Hitachi High-Technologies Corp プラズマ処理方法及び処理装置
KR20100041103A (ko) * 2008-10-13 2010-04-22 김남진 플라즈마 처리장치

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JPH0864394A (ja) * 1994-08-24 1996-03-08 Nissin Electric Co Ltd プラズマ処理装置
US5907221A (en) * 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
US6388382B1 (en) * 1999-03-09 2002-05-14 Hitachi, Ltd. Plasma processing apparatus and method
JP2005175503A (ja) * 1999-04-28 2005-06-30 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP4585648B2 (ja) * 1999-09-03 2010-11-24 株式会社アルバック プラズマ処理装置
JP3621900B2 (ja) * 2000-09-12 2005-02-16 株式会社日立製作所 プラズマ処理装置および方法
US20030160024A1 (en) 2002-02-27 2003-08-28 Tadayashi Kawaguchi Plasma processing method and apparatus
JP3935850B2 (ja) 2003-01-31 2007-06-27 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20040173314A1 (en) * 2003-03-05 2004-09-09 Ryoji Nishio Plasma processing apparatus and method
JP3816081B2 (ja) 2004-03-10 2006-08-30 松下電器産業株式会社 プラズマエッチング装置及びプラズマエッチング方法
US7342361B2 (en) * 2005-05-11 2008-03-11 Dublin City University Plasma source
JP2008060258A (ja) * 2006-08-30 2008-03-13 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ処理方法
US8438990B2 (en) * 2008-09-30 2013-05-14 Applied Materials, Inc. Multi-electrode PECVD source

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243362A (ja) * 2002-02-15 2003-08-29 Hitachi High-Technologies Corp プラズマ処理方法及び処理装置
KR20100041103A (ko) * 2008-10-13 2010-04-22 김남진 플라즈마 처리장치

Also Published As

Publication number Publication date
US8940128B2 (en) 2015-01-27
JP2011253916A (ja) 2011-12-15
JP5656458B2 (ja) 2015-01-21
KR20110132508A (ko) 2011-12-08
US20110297320A1 (en) 2011-12-08

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