KR101135242B1 - 정전기 척 조립체 - Google Patents

정전기 척 조립체 Download PDF

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Publication number
KR101135242B1
KR101135242B1 KR1020080100152A KR20080100152A KR101135242B1 KR 101135242 B1 KR101135242 B1 KR 101135242B1 KR 1020080100152 A KR1020080100152 A KR 1020080100152A KR 20080100152 A KR20080100152 A KR 20080100152A KR 101135242 B1 KR101135242 B1 KR 101135242B1
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KR
South Korea
Prior art keywords
electrostatic chuck
grooves
puck
cooling channel
chuck assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080100152A
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English (en)
Korean (ko)
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KR20090037839A (ko
Inventor
더글라스 에이. 주니어 부치베르거
폴 브릴하르트
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20090037839A publication Critical patent/KR20090037839A/ko
Application granted granted Critical
Publication of KR101135242B1 publication Critical patent/KR101135242B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020080100152A 2007-10-12 2008-10-13 정전기 척 조립체 Expired - Fee Related KR101135242B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/871,807 2007-10-12
US11/871,807 US7649729B2 (en) 2007-10-12 2007-10-12 Electrostatic chuck assembly

Publications (2)

Publication Number Publication Date
KR20090037839A KR20090037839A (ko) 2009-04-16
KR101135242B1 true KR101135242B1 (ko) 2012-04-12

Family

ID=40533966

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080100152A Expired - Fee Related KR101135242B1 (ko) 2007-10-12 2008-10-13 정전기 척 조립체

Country Status (5)

Country Link
US (1) US7649729B2 (https=)
JP (1) JP5523326B2 (https=)
KR (1) KR101135242B1 (https=)
TW (1) TWI399825B (https=)
WO (1) WO2009049054A1 (https=)

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US9358702B2 (en) 2013-01-18 2016-06-07 Applied Materials, Inc. Temperature management of aluminium nitride electrostatic chuck
US9669653B2 (en) 2013-03-14 2017-06-06 Applied Materials, Inc. Electrostatic chuck refurbishment
US10389278B2 (en) 2013-03-29 2019-08-20 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device with multiple fine protrusions or multiple fine recesses
US9887121B2 (en) 2013-04-26 2018-02-06 Applied Materials, Inc. Protective cover for electrostatic chuck
US9666466B2 (en) 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US10079165B2 (en) * 2014-05-20 2018-09-18 Applied Materials, Inc. Electrostatic chuck with independent zone cooling and reduced crosstalk
US10186444B2 (en) 2015-03-20 2019-01-22 Applied Materials, Inc. Gas flow for condensation reduction with a substrate processing chuck
TWI616976B (zh) * 2015-06-05 2018-03-01 瓦特洛威電子製造公司 高熱傳導晶圓支撐臺座裝置
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
US11837479B2 (en) 2016-05-05 2023-12-05 Applied Materials, Inc. Advanced temperature control for wafer carrier in plasma processing chamber
US20180148835A1 (en) * 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
WO2021168027A1 (en) * 2020-02-20 2021-08-26 Lam Research Corporation Coolant channel with internal fins for substrate processing pedestals
KR102654628B1 (ko) * 2020-05-25 2024-04-03 엔지케이 인슐레이터 엘티디 정전 척
US11495483B2 (en) * 2020-10-15 2022-11-08 Applied Materials, Inc. Backside gas leakby for bevel deposition reduction
WO2022146667A1 (en) 2020-12-29 2022-07-07 Mattson Technology, Inc. Electrostatic chuck assembly for plasma processing apparatus
TWI772005B (zh) * 2021-04-28 2022-07-21 錼創顯示科技股份有限公司 半導體晶圓承載結構及有機金屬化學氣相沉積裝置
KR102697860B1 (ko) * 2022-02-08 2024-08-22 (주)아이씨디 정전 장치 및 그 동작 방법
WO2026044003A1 (en) * 2024-08-23 2026-02-26 Lam Research Corporation Improved wafer temperature uniformity via localized increase in substrate contact surface area density

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US20050045106A1 (en) * 2002-09-19 2005-03-03 Boyd Wendell G. Electrostatic chuck having a low level of particle generation and method of fabricating same

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US20020076939A1 (en) * 2000-10-05 2002-06-20 Applied Materials, Inc. High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers
US20050045106A1 (en) * 2002-09-19 2005-03-03 Boyd Wendell G. Electrostatic chuck having a low level of particle generation and method of fabricating same

Also Published As

Publication number Publication date
KR20090037839A (ko) 2009-04-16
US7649729B2 (en) 2010-01-19
JP2011501418A (ja) 2011-01-06
TW200926349A (en) 2009-06-16
WO2009049054A1 (en) 2009-04-16
JP5523326B2 (ja) 2014-06-18
US20090097184A1 (en) 2009-04-16
TWI399825B (zh) 2013-06-21

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