KR101110086B1 - 치밀화층들로 형성된 능동 채널들을 갖는 유기 전계-효과 트랜지스터들 - Google Patents

치밀화층들로 형성된 능동 채널들을 갖는 유기 전계-효과 트랜지스터들 Download PDF

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KR101110086B1
KR101110086B1 KR1020040097395A KR20040097395A KR101110086B1 KR 101110086 B1 KR101110086 B1 KR 101110086B1 KR 1020040097395 A KR1020040097395 A KR 1020040097395A KR 20040097395 A KR20040097395 A KR 20040097395A KR 101110086 B1 KR101110086 B1 KR 101110086B1
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substrate
organic molecules
channel
organic
layer
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KR20050054441A (ko
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제난 바오
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알카텔-루센트 유에스에이 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H10K10/482—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors the IGFET comprising multiple separately-addressable gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1020040097395A 2003-12-04 2004-11-25 치밀화층들로 형성된 능동 채널들을 갖는 유기 전계-효과 트랜지스터들 Expired - Fee Related KR101110086B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/727,709 2003-12-04
US10/727,709 US7767998B2 (en) 2003-12-04 2003-12-04 OFETs with active channels formed of densified layers

Publications (2)

Publication Number Publication Date
KR20050054441A KR20050054441A (ko) 2005-06-10
KR101110086B1 true KR101110086B1 (ko) 2012-02-24

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Country Status (4)

Country Link
US (2) US7767998B2 (https=)
EP (1) EP1538685A1 (https=)
JP (1) JP5042452B2 (https=)
KR (1) KR101110086B1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050211973A1 (en) * 2004-03-23 2005-09-29 Kiyotaka Mori Stressed organic semiconductor
KR100766318B1 (ko) * 2005-11-29 2007-10-11 엘지.필립스 엘시디 주식회사 유기 반도체 물질을 이용한 박막트랜지스터와 이를 구비한액정표시장치용 어레이 기판 및 그 제조방법
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
ATE470957T1 (de) * 2006-03-24 2010-06-15 Merck Patent Gmbh Organische halbleiterformulierung
KR100845004B1 (ko) * 2007-04-30 2008-07-09 삼성전자주식회사 나노 갭을 갖는 금속막 패턴의 형성 방법 및 이를 이용한분자크기의 소자 제조 방법
US8043978B2 (en) * 2007-10-11 2011-10-25 Riken Electronic device and method for producing electronic device
KR100906144B1 (ko) * 2007-12-05 2009-07-07 한국전자통신연구원 검출 소자 및 검출 소자의 제조 방법
US11786036B2 (en) 2008-06-27 2023-10-17 Ssw Advanced Technologies, Llc Spill containing refrigerator shelf assembly
US8286561B2 (en) 2008-06-27 2012-10-16 Ssw Holding Company, Inc. Spill containing refrigerator shelf assembly
AU2009302806B9 (en) 2008-10-07 2015-10-01 Ross Technology Corporation Highly durable superhydrophobic, oleophobic and anti-icing coatings and methods and compositions for their preparation
EP2496886B1 (en) 2009-11-04 2016-12-21 SSW Holding Company, Inc. Cooking appliance surfaces having spill containment pattern and methods of making the same
CA2796305A1 (en) 2010-03-15 2011-09-22 Ross Technology Corporation Plunger and methods of producing hydrophobic surfaces
US20120112830A1 (en) * 2010-11-04 2012-05-10 Ludwig Lester F Towards the very smallest electronic circuits and systems: transduction, signal processing, and digital logic in molecular fused-rings via mesh ring-currents
WO2012115986A1 (en) 2011-02-21 2012-08-30 Ross Technology Corporation Superhydrophobic and oleophobic coatings with low voc binder systems
DE102011085428A1 (de) 2011-10-28 2013-05-02 Schott Ag Einlegeboden
WO2013090939A1 (en) 2011-12-15 2013-06-20 Ross Technology Corporation Composition and coating for superhydrophobic performance
KR20150013633A (ko) * 2012-05-02 2015-02-05 바스프 에스이 유기 물질의 증착 방법
MX2015000119A (es) 2012-06-25 2015-04-14 Ross Technology Corp Recubrimientos elastoméricos con propiedades hidrofóbicas y/u oleofóbicas.
WO2014008971A1 (en) * 2012-07-13 2014-01-16 Merck Patent Gmbh Organic electronic device comprising an organic semiconductor formulation
KR101980198B1 (ko) * 2012-11-12 2019-05-21 삼성전자주식회사 신축성 트랜지스터용 채널층
KR102089347B1 (ko) * 2013-10-08 2020-03-16 경북대학교 산학협력단 비휘발성 메모리 소자 및 이의 제조 방법
US20220045274A1 (en) * 2020-08-06 2022-02-10 Facebook Technologies Llc Ofets having organic semiconductor layer with high carrier mobility and in situ isolation

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206525A (en) 1989-12-27 1993-04-27 Nippon Petrochemicals Co., Ltd. Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials
US5556706A (en) * 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
US5574291A (en) * 1994-12-09 1996-11-12 Lucent Technologies Inc. Article comprising a thin film transistor with low conductivity organic layer
DE69840914D1 (de) * 1997-10-14 2009-07-30 Patterning Technologies Ltd Methode zur Herstellung eines elektrischen Kondensators
AU781584B2 (en) 1999-12-21 2005-06-02 Flexenable Limited Solution processed devices
TW555790B (en) 2000-12-26 2003-10-01 Matsushita Electric Industrial Co Ltd Conductive organic thin film, process for producing the same, and organic photoelectronic device, electric wire, and electrode aech employing the same
US6946676B2 (en) 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
US6555411B1 (en) 2001-12-18 2003-04-29 Lucent Technologies Inc. Thin film transistors
GB0130485D0 (en) 2001-12-21 2002-02-06 Plastic Logic Ltd Self-aligned printing
US6777529B2 (en) * 2002-01-11 2004-08-17 Xerox Corporation Polythiophenes and devices thereof
CN100459164C (zh) * 2002-02-08 2009-02-04 大日本印刷株式会社 有机半导体结构物、其制造方法和有机半导体装置
US6596569B1 (en) 2002-03-15 2003-07-22 Lucent Technologies Inc. Thin film transistors
US6770549B2 (en) 2002-05-08 2004-08-03 Lucent Technologies Inc. Forming patterned thin film metal layers
US6661024B1 (en) 2002-07-02 2003-12-09 Motorola, Inc. Integrated circuit including field effect transistor and method of manufacture
US7132680B2 (en) 2003-06-09 2006-11-07 International Business Machines Corporation Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Organic thin-film transistors: A review of recent advances, VOL.45, NO.1, IBM J. RES. & DEV.(2001년 1월 공개)*

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US7338835B2 (en) 2008-03-04
JP5042452B2 (ja) 2012-10-03
JP2005167256A (ja) 2005-06-23
US7767998B2 (en) 2010-08-03
US20050121728A1 (en) 2005-06-09
US20050242345A1 (en) 2005-11-03
KR20050054441A (ko) 2005-06-10
EP1538685A1 (en) 2005-06-08

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