KR101109069B1 - 플라즈마처리장치 - Google Patents

플라즈마처리장치 Download PDF

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Publication number
KR101109069B1
KR101109069B1 KR1020090074674A KR20090074674A KR101109069B1 KR 101109069 B1 KR101109069 B1 KR 101109069B1 KR 1020090074674 A KR1020090074674 A KR 1020090074674A KR 20090074674 A KR20090074674 A KR 20090074674A KR 101109069 B1 KR101109069 B1 KR 101109069B1
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South Korea
Prior art keywords
plate
gas hole
shower plate
gas
shower
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KR1020090074674A
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English (en)
Korean (ko)
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KR20100138688A (ko
Inventor
겐에츠 요코가와
겐지 마에다
도모유키 다무라
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020090074674A 2009-06-23 2009-08-13 플라즈마처리장치 Active KR101109069B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-148189 2009-06-23
JP2009148189A JP5455462B2 (ja) 2009-06-23 2009-06-23 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20100138688A KR20100138688A (ko) 2010-12-31
KR101109069B1 true KR101109069B1 (ko) 2012-01-31

Family

ID=43353259

Family Applications (1)

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KR1020090074674A Active KR101109069B1 (ko) 2009-06-23 2009-08-13 플라즈마처리장치

Country Status (3)

Country Link
US (1) US20100319854A1 (https=)
JP (1) JP5455462B2 (https=)
KR (1) KR101109069B1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101495230B1 (ko) * 2012-10-17 2015-02-24 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리 장치

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
CN102797012A (zh) * 2012-07-27 2012-11-28 京东方科技集团股份有限公司 一种刻蚀设备及其上部电极
JP6368808B2 (ja) * 2017-01-31 2018-08-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2019109980A (ja) * 2017-12-15 2019-07-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP7451490B2 (ja) * 2018-07-30 2024-03-18 ノードソン コーポレーション プラズマを用いたワーク処理用のシステム
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
JP7132359B2 (ja) * 2019-01-07 2022-09-06 株式会社アルバック 真空処理装置、真空処理装置のクリーニング方法
JP7153574B2 (ja) * 2019-01-17 2022-10-14 東京エレクトロン株式会社 上部電極構造、プラズマ処理装置、及び上部電極構造を組み立てる方法
CN113802110A (zh) * 2020-06-13 2021-12-17 拓荆科技股份有限公司 一种提高清洗效率的等离子腔室

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001298015A (ja) 2000-04-18 2001-10-26 Tokyo Electron Ltd プラズマ処理装置
JP2003068718A (ja) 2001-08-28 2003-03-07 Hitachi Ltd プラズマ処理装置
JP2009117711A (ja) 2007-11-08 2009-05-28 Tokyo Electron Ltd シャワープレート及び基板処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
JP4364667B2 (ja) * 2004-02-13 2009-11-18 東京エレクトロン株式会社 溶射部材、電極、およびプラズマ処理装置
US8083853B2 (en) * 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
JP4819411B2 (ja) * 2005-06-22 2011-11-24 東京エレクトロン株式会社 プラズマ処理装置
US20060288934A1 (en) * 2005-06-22 2006-12-28 Tokyo Electron Limited Electrode assembly and plasma processing apparatus
JP4707588B2 (ja) * 2006-03-16 2011-06-22 東京エレクトロン株式会社 プラズマ処理装置及びそれに用いられる電極

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001298015A (ja) 2000-04-18 2001-10-26 Tokyo Electron Ltd プラズマ処理装置
JP2003068718A (ja) 2001-08-28 2003-03-07 Hitachi Ltd プラズマ処理装置
JP2009117711A (ja) 2007-11-08 2009-05-28 Tokyo Electron Ltd シャワープレート及び基板処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101495230B1 (ko) * 2012-10-17 2015-02-24 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리 장치
US10665448B2 (en) 2012-10-17 2020-05-26 Hitachi High-Tech Corporation Plasma processing apparatus

Also Published As

Publication number Publication date
US20100319854A1 (en) 2010-12-23
KR20100138688A (ko) 2010-12-31
JP5455462B2 (ja) 2014-03-26
JP2011009249A (ja) 2011-01-13

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