KR101107842B1 - 연마패드 및 이를 사용하는 반도체 디바이스의 제조방법 - Google Patents

연마패드 및 이를 사용하는 반도체 디바이스의 제조방법 Download PDF

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Publication number
KR101107842B1
KR101107842B1 KR1020067019680A KR20067019680A KR101107842B1 KR 101107842 B1 KR101107842 B1 KR 101107842B1 KR 1020067019680 A KR1020067019680 A KR 1020067019680A KR 20067019680 A KR20067019680 A KR 20067019680A KR 101107842 B1 KR101107842 B1 KR 101107842B1
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KR
South Korea
Prior art keywords
polishing
layer
polishing pad
cushion layer
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020067019680A
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English (en)
Korean (ko)
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KR20070019709A (ko
Inventor
데쓰오 시모무라
마사히코 나카모리
다카토시 야마다
아쓰시 가즈노
가즈유키 오가와
요시유키 나카이
Original Assignee
도요 고무 고교 가부시키가이샤
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Publication of KR20070019709A publication Critical patent/KR20070019709A/ko
Application granted granted Critical
Publication of KR101107842B1 publication Critical patent/KR101107842B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/22—Rubbers synthetic or natural
    • B24D3/24—Rubbers synthetic or natural for close-grained structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020067019680A 2004-02-23 2005-02-22 연마패드 및 이를 사용하는 반도체 디바이스의 제조방법 Expired - Fee Related KR101107842B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004046411A JP3754436B2 (ja) 2004-02-23 2004-02-23 研磨パッドおよびそれを使用する半導体デバイスの製造方法
JPJP-P-2004-00046411 2004-02-23
PCT/JP2005/002785 WO2005081300A1 (ja) 2004-02-23 2005-02-22 研磨パッドおよびそれを使用する半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
KR20070019709A KR20070019709A (ko) 2007-02-15
KR101107842B1 true KR101107842B1 (ko) 2012-01-31

Family

ID=34879440

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067019680A Expired - Fee Related KR101107842B1 (ko) 2004-02-23 2005-02-22 연마패드 및 이를 사용하는 반도체 디바이스의 제조방법

Country Status (6)

Country Link
US (1) US7470170B2 (enExample)
JP (1) JP3754436B2 (enExample)
KR (1) KR101107842B1 (enExample)
CN (1) CN100461346C (enExample)
TW (1) TW200534357A (enExample)
WO (1) WO2005081300A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102198769B1 (ko) 2020-03-17 2021-01-05 에스케이씨 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
KR102206485B1 (ko) 2020-03-17 2021-01-22 에스케이씨 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
US11534887B2 (en) 2020-03-17 2022-12-27 Skc Solmics Co., Ltd. Polishing pad and method for preparing semiconductor device using same

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KR101290490B1 (ko) * 2005-09-22 2013-07-26 가부시키가이샤 구라레 고분자 재료, 그것으로부터 얻어지는 발포체 및 이들을사용한 연마 패드
JP4859109B2 (ja) * 2006-03-27 2012-01-25 東洋ゴム工業株式会社 研磨パッドの製造方法
JP2007329342A (ja) * 2006-06-08 2007-12-20 Toshiba Corp 化学的機械的研磨方法
JP4869017B2 (ja) * 2006-10-20 2012-02-01 東洋ゴム工業株式会社 長尺研磨パッドの製造方法
JP4822348B2 (ja) * 2006-12-11 2011-11-24 花王株式会社 磁気ディスク基板の製造方法
US7438636B2 (en) * 2006-12-21 2008-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US20110045753A1 (en) * 2008-05-16 2011-02-24 Toray Industries, Inc. Polishing pad
SG185085A1 (en) * 2010-04-30 2012-12-28 Sumco Corp Method for polishing silicon wafer and polishing liquid therefor
TWI510328B (zh) * 2010-05-03 2015-12-01 Iv Technologies Co Ltd 基底層、包括此基底層的研磨墊及研磨方法
KR101146491B1 (ko) * 2010-12-13 2012-05-16 주식회사 엘지실트론 연마 패드 및 이를 포함하는 웨이퍼 연마장치
KR20140034128A (ko) * 2011-02-15 2014-03-19 도레이 카부시키가이샤 연마 패드
KR20140037891A (ko) * 2011-07-15 2014-03-27 도레이 카부시키가이샤 연마 패드
WO2015008572A1 (ja) * 2013-07-19 2015-01-22 国立大学法人名古屋工業大学 金属製研磨パッドおよびその製造方法
KR101763872B1 (ko) * 2013-10-04 2017-08-01 주식회사 엘지화학 폴리우레탄 지지 패드
JP6434266B2 (ja) * 2013-12-17 2018-12-05 富士紡ホールディングス株式会社 ラッピング用樹脂定盤及びそれを用いたラッピング方法
US9259820B2 (en) * 2014-03-28 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with polishing layer and window
US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US10120363B2 (en) 2016-02-29 2018-11-06 Fanuc Corporation Numerical controller for machine tool
US11059150B2 (en) * 2017-08-10 2021-07-13 Dongguan Golden Sun Abrasives Co., Ltd. Elastic self-lubricating polishing tool
JP6434174B2 (ja) * 2018-01-29 2018-12-05 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP7277080B2 (ja) * 2018-03-30 2023-05-18 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP7277079B2 (ja) * 2018-03-30 2023-05-18 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
KR102173453B1 (ko) * 2019-03-29 2020-11-03 노백남 디스플레이 연마용 세정 패드 및 이의 제조방법
JP7749446B2 (ja) * 2020-12-25 2025-10-06 富士紡ホールディングス株式会社 研磨パッド、その製造方法、及び研磨加工物の製造方法
TW202239829A (zh) * 2020-12-25 2022-10-16 日商富士紡控股股份有限公司 研磨墊、其製造方法及研磨加工物之製造方法，以及包覆墊、其製造方法及包覆加工物之製造方法
JP7748274B2 (ja) * 2020-12-25 2025-10-02 富士紡ホールディングス株式会社 ラッピングパッド、その製造方法、及びラップ加工物の製造方法
JP7748273B2 (ja) * 2020-12-25 2025-10-02 富士紡ホールディングス株式会社 ラッピングパッド、その製造方法、及びラップ加工物の製造方法
JP7749445B2 (ja) * 2020-12-25 2025-10-06 富士紡ホールディングス株式会社 研磨パッド、その製造方法、及び研磨加工物の製造方法
KR102712843B1 (ko) * 2022-04-18 2024-10-02 에스케이엔펄스 주식회사 젖음성 개선 연마패드 및 이의 제조방법
US20230390970A1 (en) * 2022-06-02 2023-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making low specific gravity polishing pads

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JP2003218074A (ja) 2001-11-13 2003-07-31 Toyobo Co Ltd 半導体ウエハ研磨パッド及び半導体ウエハの研磨方法

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EP0521102B1 (en) * 1990-03-22 1995-06-14 Westech Systems, Inc. Apparatus for interlayer planarization of semiconductor material
US5257478A (en) 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
JP2900777B2 (ja) 1993-12-14 1999-06-02 信越半導体株式会社 研磨部材およびウエーハ研磨装置
US5564965A (en) 1993-12-14 1996-10-15 Shin-Etsu Handotai Co., Ltd. Polishing member and wafer polishing apparatus
US6428388B2 (en) * 1998-11-06 2002-08-06 Beaver Creek Concepts Inc. Finishing element with finishing aids
JP4296655B2 (ja) * 1999-10-12 2009-07-15 東レ株式会社 半導体基板用研磨パッド
JP2002059357A (ja) 2000-08-23 2002-02-26 Toray Ind Inc 研磨パッドおよび研磨装置ならびに研磨方法
KR100905266B1 (ko) * 2000-12-01 2009-06-29 도요 고무 고교 가부시키가이샤 연마 패드
JP2003305635A (ja) 2000-12-01 2003-10-28 Toyobo Co Ltd 研磨パッド用クッション層及びそれを用いた研磨パッド
JP2003124161A (ja) * 2001-10-09 2003-04-25 Toray Ind Inc 研磨パッド、研磨装置、およびそれを用いた研磨方法
KR100877383B1 (ko) 2001-11-13 2009-01-07 도요 고무 고교 가부시키가이샤 연마 패드 및 그 제조 방법
JP3570681B2 (ja) * 2001-12-10 2004-09-29 東洋ゴム工業株式会社 研磨パッド
US6913517B2 (en) * 2002-05-23 2005-07-05 Cabot Microelectronics Corporation Microporous polishing pads
US7267607B2 (en) * 2002-10-28 2007-09-11 Cabot Microelectronics Corporation Transparent microporous materials for CMP
US6998166B2 (en) * 2003-06-17 2006-02-14 Cabot Microelectronics Corporation Polishing pad with oriented pore structure
US20050032464A1 (en) * 2003-08-07 2005-02-10 Swisher Robert G. Polishing pad having edge surface treatment
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102198769B1 (ko) 2020-03-17 2021-01-05 에스케이씨 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
KR102206485B1 (ko) 2020-03-17 2021-01-22 에스케이씨 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
KR20210116209A (ko) 2020-03-17 2021-09-27 에스케이씨솔믹스 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
US11534887B2 (en) 2020-03-17 2022-12-27 Skc Solmics Co., Ltd. Polishing pad and method for preparing semiconductor device using same

Also Published As

Publication number Publication date
JP2005236200A (ja) 2005-09-02
US20070178812A1 (en) 2007-08-02
TWI358081B (enExample) 2012-02-11
CN100461346C (zh) 2009-02-11
CN1950930A (zh) 2007-04-18
WO2005081300A1 (ja) 2005-09-01
JP3754436B2 (ja) 2006-03-15
US7470170B2 (en) 2008-12-30
TW200534357A (en) 2005-10-16
KR20070019709A (ko) 2007-02-15

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