CN100461346C - 研磨垫和利用该研磨垫制造半导体器件的方法 - Google Patents

研磨垫和利用该研磨垫制造半导体器件的方法 Download PDF

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Publication number
CN100461346C
CN100461346C CNB2005800124200A CN200580012420A CN100461346C CN 100461346 C CN100461346 C CN 100461346C CN B2005800124200 A CNB2005800124200 A CN B2005800124200A CN 200580012420 A CN200580012420 A CN 200580012420A CN 100461346 C CN100461346 C CN 100461346C
Authority
CN
China
Prior art keywords
layer
polishing
polishing pad
grinding
abrasive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005800124200A
Other languages
English (en)
Chinese (zh)
Other versions
CN1950930A (zh
Inventor
下村哲生
中森雅彦
山田孝敏
数野淳
小川一幸
中井良之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Toyo Tire and Rubber Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Tire and Rubber Co Ltd filed Critical Toyo Tire and Rubber Co Ltd
Publication of CN1950930A publication Critical patent/CN1950930A/zh
Application granted granted Critical
Publication of CN100461346C publication Critical patent/CN100461346C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/22—Rubbers synthetic or natural
    • B24D3/24—Rubbers synthetic or natural for close-grained structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CNB2005800124200A 2004-02-23 2005-02-22 研磨垫和利用该研磨垫制造半导体器件的方法 Expired - Fee Related CN100461346C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP046411/2004 2004-02-23
JP2004046411A JP3754436B2 (ja) 2004-02-23 2004-02-23 研磨パッドおよびそれを使用する半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
CN1950930A CN1950930A (zh) 2007-04-18
CN100461346C true CN100461346C (zh) 2009-02-11

Family

ID=34879440

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800124200A Expired - Fee Related CN100461346C (zh) 2004-02-23 2005-02-22 研磨垫和利用该研磨垫制造半导体器件的方法

Country Status (6)

Country Link
US (1) US7470170B2 (enExample)
JP (1) JP3754436B2 (enExample)
KR (1) KR101107842B1 (enExample)
CN (1) CN100461346C (enExample)
TW (1) TW200534357A (enExample)
WO (1) WO2005081300A1 (enExample)

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JP4859109B2 (ja) * 2006-03-27 2012-01-25 東洋ゴム工業株式会社 研磨パッドの製造方法
JP2007329342A (ja) * 2006-06-08 2007-12-20 Toshiba Corp 化学的機械的研磨方法
JP4869017B2 (ja) * 2006-10-20 2012-02-01 東洋ゴム工業株式会社 長尺研磨パッドの製造方法
JP4822348B2 (ja) * 2006-12-11 2011-11-24 花王株式会社 磁気ディスク基板の製造方法
US7438636B2 (en) * 2006-12-21 2008-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
WO2009139401A1 (ja) * 2008-05-16 2009-11-19 東レ株式会社 研磨パッド
KR101439995B1 (ko) * 2010-04-30 2014-09-12 가부시키가이샤 사무코 실리콘 웨이퍼의 연마 방법
TWI510328B (zh) * 2010-05-03 2015-12-01 Iv Technologies Co Ltd 基底層、包括此基底層的研磨墊及研磨方法
KR101146491B1 (ko) * 2010-12-13 2012-05-16 주식회사 엘지실트론 연마 패드 및 이를 포함하는 웨이퍼 연마장치
US20140170943A1 (en) * 2011-02-15 2014-06-19 Toray Industries, Inc. Polishing pad
KR20140037891A (ko) * 2011-07-15 2014-03-27 도레이 카부시키가이샤 연마 패드
EP3024015B1 (en) * 2013-07-19 2019-08-14 Nagoya Institute Of Technology Metallic polishing pad and production method therefor
KR101763872B1 (ko) * 2013-10-04 2017-08-01 주식회사 엘지화학 폴리우레탄 지지 패드
JP6434266B2 (ja) * 2013-12-17 2018-12-05 富士紡ホールディングス株式会社 ラッピング用樹脂定盤及びそれを用いたラッピング方法
US9259820B2 (en) * 2014-03-28 2016-02-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with polishing layer and window
US9216489B2 (en) * 2014-03-28 2015-12-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with endpoint detection window
US10120363B2 (en) 2016-02-29 2018-11-06 Fanuc Corporation Numerical controller for machine tool
US11059150B2 (en) * 2017-08-10 2021-07-13 Dongguan Golden Sun Abrasives Co., Ltd. Elastic self-lubricating polishing tool
JP6434174B2 (ja) * 2018-01-29 2018-12-05 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP7277079B2 (ja) * 2018-03-30 2023-05-18 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
JP7277080B2 (ja) * 2018-03-30 2023-05-18 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
KR102173453B1 (ko) * 2019-03-29 2020-11-03 노백남 디스플레이 연마용 세정 패드 및 이의 제조방법
JP7105334B2 (ja) 2020-03-17 2022-07-22 エスケーシー ソルミックス カンパニー，リミテッド 研磨パッドおよびこれを用いた半導体素子の製造方法
KR102198769B1 (ko) 2020-03-17 2021-01-05 에스케이씨 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
KR102206485B1 (ko) 2020-03-17 2021-01-22 에스케이씨 주식회사 연마패드 및 이를 이용한 반도체 소자의 제조방법
TW202239829A (zh) * 2020-12-25 2022-10-16 日商富士紡控股股份有限公司 研磨墊、其製造方法及研磨加工物之製造方法，以及包覆墊、其製造方法及包覆加工物之製造方法
JP7748273B2 (ja) * 2020-12-25 2025-10-02 富士紡ホールディングス株式会社 ラッピングパッド、その製造方法、及びラップ加工物の製造方法
JP7748274B2 (ja) * 2020-12-25 2025-10-02 富士紡ホールディングス株式会社 ラッピングパッド、その製造方法、及びラップ加工物の製造方法
JP7749446B2 (ja) * 2020-12-25 2025-10-06 富士紡ホールディングス株式会社 研磨パッド、その製造方法、及び研磨加工物の製造方法
JP7749445B2 (ja) * 2020-12-25 2025-10-06 富士紡ホールディングス株式会社 研磨パッド、その製造方法、及び研磨加工物の製造方法
KR102712843B1 (ko) * 2022-04-18 2024-10-02 에스케이엔펄스 주식회사 젖음성 개선 연마패드 및 이의 제조방법
US20230390970A1 (en) * 2022-06-02 2023-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making low specific gravity polishing pads

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Publication number Priority date Publication date Assignee Title
JP2001105300A (ja) * 1999-10-12 2001-04-17 Toray Ind Inc 研磨パッド
JP2003124161A (ja) * 2001-10-09 2003-04-25 Toray Ind Inc 研磨パッド、研磨装置、およびそれを用いた研磨方法
JP2003218074A (ja) * 2001-11-13 2003-07-31 Toyobo Co Ltd 半導体ウエハ研磨パッド及び半導体ウエハの研磨方法
JP2003303794A (ja) * 1990-03-22 2003-10-24 Westech Systems Inc 研磨パッド
JP2004042244A (ja) * 2001-12-10 2004-02-12 Toyo Tire & Rubber Co Ltd 研磨パッド
CN1476367A (zh) * 2000-12-01 2004-02-18 �����֯��ʽ���� 研磨垫及其制造方法和研磨垫用缓冲层

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US5257478A (en) 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5564965A (en) 1993-12-14 1996-10-15 Shin-Etsu Handotai Co., Ltd. Polishing member and wafer polishing apparatus
JP2900777B2 (ja) 1993-12-14 1999-06-02 信越半導体株式会社 研磨部材およびウエーハ研磨装置
US6428388B2 (en) * 1998-11-06 2002-08-06 Beaver Creek Concepts Inc. Finishing element with finishing aids
JP2002059357A (ja) 2000-08-23 2002-02-26 Toray Ind Inc 研磨パッドおよび研磨装置ならびに研磨方法
JP2003305635A (ja) 2000-12-01 2003-10-28 Toyobo Co Ltd 研磨パッド用クッション層及びそれを用いた研磨パッド
KR100877390B1 (ko) 2001-11-13 2009-01-07 도요 고무 고교 가부시키가이샤 연마 패드 및 그 제조 방법
US6913517B2 (en) * 2002-05-23 2005-07-05 Cabot Microelectronics Corporation Microporous polishing pads
US7267607B2 (en) * 2002-10-28 2007-09-11 Cabot Microelectronics Corporation Transparent microporous materials for CMP
US6998166B2 (en) * 2003-06-17 2006-02-14 Cabot Microelectronics Corporation Polishing pad with oriented pore structure
US20050032464A1 (en) * 2003-08-07 2005-02-10 Swisher Robert G. Polishing pad having edge surface treatment
US8075372B2 (en) * 2004-09-01 2011-12-13 Cabot Microelectronics Corporation Polishing pad with microporous regions

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JP2003303794A (ja) * 1990-03-22 2003-10-24 Westech Systems Inc 研磨パッド
JP2001105300A (ja) * 1999-10-12 2001-04-17 Toray Ind Inc 研磨パッド
CN1476367A (zh) * 2000-12-01 2004-02-18 �����֯��ʽ���� 研磨垫及其制造方法和研磨垫用缓冲层
JP2003124161A (ja) * 2001-10-09 2003-04-25 Toray Ind Inc 研磨パッド、研磨装置、およびそれを用いた研磨方法
JP2003218074A (ja) * 2001-11-13 2003-07-31 Toyobo Co Ltd 半導体ウエハ研磨パッド及び半導体ウエハの研磨方法
JP2004042244A (ja) * 2001-12-10 2004-02-12 Toyo Tire & Rubber Co Ltd 研磨パッド

Also Published As

Publication number Publication date
US20070178812A1 (en) 2007-08-02
KR101107842B1 (ko) 2012-01-31
JP3754436B2 (ja) 2006-03-15
US7470170B2 (en) 2008-12-30
CN1950930A (zh) 2007-04-18
WO2005081300A1 (ja) 2005-09-01
KR20070019709A (ko) 2007-02-15
TWI358081B (enExample) 2012-02-11
JP2005236200A (ja) 2005-09-02
TW200534357A (en) 2005-10-16

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160906

Address after: Delaware

Patentee after: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, Inc.

Address before: Osaka Japan

Patentee before: TOYO TIRE & RUBBER Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090211