KR101107653B1 - 단결정의 제조방법 및 단결정 - Google Patents

단결정의 제조방법 및 단결정 Download PDF

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Publication number
KR101107653B1
KR101107653B1 KR1020057021320A KR20057021320A KR101107653B1 KR 101107653 B1 KR101107653 B1 KR 101107653B1 KR 1020057021320 A KR1020057021320 A KR 1020057021320A KR 20057021320 A KR20057021320 A KR 20057021320A KR 101107653 B1 KR101107653 B1 KR 101107653B1
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South Korea
Prior art keywords
single crystal
max
value
region
crucible
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KR1020057021320A
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English (en)
Korean (ko)
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KR20060003084A (ko
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마코토 이이다
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신에쯔 한도타이 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020057021320A 2003-05-13 2004-04-26 단결정의 제조방법 및 단결정 Expired - Fee Related KR101107653B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00135085 2003-05-13
JP2003135085A JP4151474B2 (ja) 2003-05-13 2003-05-13 単結晶の製造方法及び単結晶
PCT/JP2004/006003 WO2004101868A1 (ja) 2003-05-13 2004-04-26 単結晶の製造方法及び単結晶

Publications (2)

Publication Number Publication Date
KR20060003084A KR20060003084A (ko) 2006-01-09
KR101107653B1 true KR101107653B1 (ko) 2012-01-20

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ID=33447168

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KR1020057021320A Expired - Fee Related KR101107653B1 (ko) 2003-05-13 2004-04-26 단결정의 제조방법 및 단결정

Country Status (6)

Country Link
US (1) US7582159B2 (https=)
EP (1) EP1624094B1 (https=)
JP (1) JP4151474B2 (https=)
KR (1) KR101107653B1 (https=)
TW (1) TW200500509A (https=)
WO (1) WO2004101868A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
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JP4710247B2 (ja) * 2004-05-19 2011-06-29 株式会社Sumco 単結晶製造装置及び方法
JP2006069841A (ja) * 2004-09-02 2006-03-16 Sumco Corp 磁場印加式シリコン単結晶の引上げ方法
JP4513798B2 (ja) 2006-10-24 2010-07-28 信越半導体株式会社 単結晶製造装置及び単結晶の製造方法
JP5029184B2 (ja) * 2007-07-19 2012-09-19 日立電線株式会社 半導体結晶の製造方法及びその製造装置
JP5151628B2 (ja) * 2008-04-02 2013-02-27 信越半導体株式会社 シリコン単結晶ウエーハ、シリコン単結晶の製造方法および半導体デバイス
JP2012142455A (ja) 2010-12-29 2012-07-26 Siltronic Ag アニールウエハの製造方法
CN102644104A (zh) * 2011-06-15 2012-08-22 安阳市凤凰光伏科技有限公司 铸造法生产类似单晶硅锭热场梯度改进装置
JP6107308B2 (ja) * 2013-03-28 2017-04-05 信越半導体株式会社 シリコン単結晶製造方法
TWI771007B (zh) * 2020-05-19 2022-07-11 環球晶圓股份有限公司 矽單晶錠的製造方法、矽單晶錠及其製造裝置

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US5685907A (en) * 1994-06-02 1997-11-11 Kabushiki Kaisha Kobe Seiko Sho Apparatus for preparing compound single crystals
US6334896B1 (en) * 1998-11-19 2002-01-01 Shin-Etsu Handotai Co., Ltd. Single-crystal silicon wafer having few crystal defects and method for manufacturing the same

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JPH11349394A (ja) 1998-06-04 1999-12-21 Shin Etsu Handotai Co Ltd 窒素ドープした低欠陥シリコン単結晶ウエーハおよびその製造方法
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US5685907A (en) * 1994-06-02 1997-11-11 Kabushiki Kaisha Kobe Seiko Sho Apparatus for preparing compound single crystals
US6334896B1 (en) * 1998-11-19 2002-01-01 Shin-Etsu Handotai Co., Ltd. Single-crystal silicon wafer having few crystal defects and method for manufacturing the same

Also Published As

Publication number Publication date
WO2004101868A1 (ja) 2004-11-25
US7582159B2 (en) 2009-09-01
EP1624094A4 (en) 2011-04-13
TWI352136B (https=) 2011-11-11
JP2004338979A (ja) 2004-12-02
EP1624094B1 (en) 2013-10-02
EP1624094A1 (en) 2006-02-08
KR20060003084A (ko) 2006-01-09
JP4151474B2 (ja) 2008-09-17
US20070000429A1 (en) 2007-01-04
TW200500509A (en) 2005-01-01

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