KR101072282B1 - 기판 처리 장치, 기판 처리 방법, 기판 처리 프로그램 및 그 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체 - Google Patents

기판 처리 장치, 기판 처리 방법, 기판 처리 프로그램 및 그 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체 Download PDF

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Publication number
KR101072282B1
KR101072282B1 KR1020087003969A KR20087003969A KR101072282B1 KR 101072282 B1 KR101072282 B1 KR 101072282B1 KR 1020087003969 A KR1020087003969 A KR 1020087003969A KR 20087003969 A KR20087003969 A KR 20087003969A KR 101072282 B1 KR101072282 B1 KR 101072282B1
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South Korea
Prior art keywords
pattern
heat treatment
substrate
processing
state
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Korean (ko)
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KR20080049017A (ko
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구니에 오가타
히로시 도미타
미치오 다나카
료이치 우에무라
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도쿄엘렉트론가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
    • G03F7/3071—Process control means, e.g. for replenishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0474—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020087003969A 2005-09-15 2006-09-13 기판 처리 장치, 기판 처리 방법, 기판 처리 프로그램 및 그 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체 Active KR101072282B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00268192 2005-09-15
JP2005268192 2005-09-15
JP2006179726A JP4570164B2 (ja) 2005-09-15 2006-06-29 基板処理装置、基板処理方法、基板処理プログラム、及びそのプログラムを記録したコンピュータ読み取り可能な記録媒体
JPJP-P-2006-00179726 2006-06-29

Publications (2)

Publication Number Publication Date
KR20080049017A KR20080049017A (ko) 2008-06-03
KR101072282B1 true KR101072282B1 (ko) 2011-10-11

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ID=37864964

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KR1020087003969A Active KR101072282B1 (ko) 2005-09-15 2006-09-13 기판 처리 장치, 기판 처리 방법, 기판 처리 프로그램 및 그 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체

Country Status (5)

Country Link
US (1) US7867673B2 (enExample)
JP (1) JP4570164B2 (enExample)
KR (1) KR101072282B1 (enExample)
TW (1) TW200729280A (enExample)
WO (1) WO2007032372A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4891139B2 (ja) 2007-04-20 2012-03-07 東京エレクトロン株式会社 熱処理板の温度設定方法、熱処理板の温度設定装置及びコンピュータ読み取り可能な記憶媒体
JP4969304B2 (ja) * 2007-04-20 2012-07-04 東京エレクトロン株式会社 熱処理板の温度設定方法、熱処理板の温度設定装置及びコンピュータ読み取り可能な記憶媒体
US8688254B2 (en) * 2007-06-15 2014-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple tools using a single data processing unit
JP5258082B2 (ja) 2007-07-12 2013-08-07 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR20090069603A (ko) * 2007-12-26 2009-07-01 주식회사 동부하이텍 반도체 장치의 작업 파일 제어 방법
JP5160920B2 (ja) * 2008-02-22 2013-03-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法、半導体装置の製造装置、及び製造プログラム
JP5599754B2 (ja) * 2010-05-31 2014-10-01 東京エレクトロン株式会社 基板処理装置、基板処理方法、およびこの基板処理方法を実行するためのコンピュータプログラムが記録された記録媒体
JP2014003164A (ja) * 2012-06-19 2014-01-09 Tokyo Electron Ltd 半導体装置の製造方法及び半導体装置並びに半導体装置の製造システム
US10409171B2 (en) 2017-01-25 2019-09-10 Kla-Tencor Corporation Overlay control with non-zero offset prediction
JP7515323B2 (ja) * 2020-07-09 2024-07-12 東京エレクトロン株式会社 検査装置及び基板搬送方法
JP7645139B2 (ja) 2021-06-22 2025-03-13 東京エレクトロン株式会社 検査方法及び検査システム

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002190446A (ja) 2000-09-28 2002-07-05 Tokyo Electron Ltd レジストパターン形成装置及びその方法
JP2003045767A (ja) 2001-07-03 2003-02-14 Infineon Technologies Sc300 Gmbh & Co Kg レジスト処理における温度を調節する方法
JP2005026362A (ja) 2003-06-30 2005-01-27 Toshiba Corp 加熱処理装置の温度校正方法、現像処理装置の調整方法、及び半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211630A (ja) * 1994-01-26 1995-08-11 Sony Corp パターン形成方法及びその装置
JPH07311630A (ja) * 1994-05-18 1995-11-28 Fujitsu Ltd クロック切り替え回路および本回路を有するプリンタ装置
JP3644315B2 (ja) * 1999-07-30 2005-04-27 ダイキン工業株式会社 インバータ装置
JP2001143850A (ja) * 1999-09-03 2001-05-25 Tokyo Electron Ltd 基板の加熱処理装置，基板の加熱処理方法，基板処理装置及び基板処理方法
US6402509B1 (en) * 1999-09-03 2002-06-11 Tokyo Electron, Limited Substrate processing apparatus and substrate processing method
JP2002324744A (ja) * 2001-04-25 2002-11-08 Hitachi Ltd 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002190446A (ja) 2000-09-28 2002-07-05 Tokyo Electron Ltd レジストパターン形成装置及びその方法
JP2003045767A (ja) 2001-07-03 2003-02-14 Infineon Technologies Sc300 Gmbh & Co Kg レジスト処理における温度を調節する方法
JP2005026362A (ja) 2003-06-30 2005-01-27 Toshiba Corp 加熱処理装置の温度校正方法、現像処理装置の調整方法、及び半導体装置の製造方法

Also Published As

Publication number Publication date
TW200729280A (en) 2007-08-01
JP2007110079A (ja) 2007-04-26
US7867673B2 (en) 2011-01-11
JP4570164B2 (ja) 2010-10-27
TWI305932B (enExample) 2009-02-01
KR20080049017A (ko) 2008-06-03
US20090162759A1 (en) 2009-06-25
WO2007032372A1 (ja) 2007-03-22

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