KR101059811B1 - 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법 - Google Patents

마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법 Download PDF

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KR101059811B1
KR101059811B1 KR1020100042384A KR20100042384A KR101059811B1 KR 101059811 B1 KR101059811 B1 KR 101059811B1 KR 1020100042384 A KR1020100042384 A KR 1020100042384A KR 20100042384 A KR20100042384 A KR 20100042384A KR 101059811 B1 KR101059811 B1 KR 101059811B1
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South Korea
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layer
alignment
mark
substrate
virtual
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Korean (ko)
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안성민
최호석
장상돈
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삼성전자주식회사
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Priority to KR1020100042384A priority Critical patent/KR101059811B1/ko
Priority to US13/064,558 priority patent/US8675180B2/en
Priority to JP2011085329A priority patent/JP2011237781A/ja
Priority to EP11162007.6A priority patent/EP2385426A3/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020100042384A 2010-05-06 2010-05-06 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법 Active KR101059811B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020100042384A KR101059811B1 (ko) 2010-05-06 2010-05-06 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법
US13/064,558 US8675180B2 (en) 2010-05-06 2011-03-31 Maskless exposure apparatus and method of alignment for overlay in maskless exposure
JP2011085329A JP2011237781A (ja) 2010-05-06 2011-04-07 マスクレス露光装置とマスクレス露光でのオーバーレイのための整列方法
EP11162007.6A EP2385426A3 (en) 2010-05-06 2011-04-12 Maskless exposure apparatus and method of alignment for overlay in maskless exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100042384A KR101059811B1 (ko) 2010-05-06 2010-05-06 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법

Publications (1)

Publication Number Publication Date
KR101059811B1 true KR101059811B1 (ko) 2011-08-26

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KR1020100042384A Active KR101059811B1 (ko) 2010-05-06 2010-05-06 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법

Country Status (4)

Country Link
US (1) US8675180B2 (enExample)
EP (1) EP2385426A3 (enExample)
JP (1) JP2011237781A (enExample)
KR (1) KR101059811B1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140074124A (ko) * 2012-12-07 2014-06-17 엘지디스플레이 주식회사 마스크리스 노광 장치의 얼라인 방법
KR101854521B1 (ko) 2016-06-08 2018-05-03 인하대학교 산학협력단 Dmd를 이용한 노광시스템
KR20190032015A (ko) * 2017-09-19 2019-03-27 주식회사 리텍 Dmd에 입사하는 조사광 방향을 제어할 수 있는 노광 광학계 및 이를 구성하는 광 조사 광학계
KR20190035066A (ko) * 2017-09-26 2019-04-03 주식회사 리텍 고속 노광과 저속 노광이 가능한 ｄｍｄ 기반의 노광 장치

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI607291B (zh) * 2013-04-17 2017-12-01 Orc Manufacturing Co Ltd Exposure device
US10996573B2 (en) 2017-01-31 2021-05-04 Asml Netherlands B.V. Method and system for increasing accuracy of pattern positioning
US10859924B2 (en) 2017-11-15 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device and system for performing the same
CN114556217A (zh) * 2019-10-08 2022-05-27 应用材料公司 用于无掩模光刻系统的通用计量文档、协议及处理
CN114442436B (zh) * 2020-10-30 2024-08-13 京东方科技集团股份有限公司 一种数字曝光设备和曝光方法
CN117882014A (zh) * 2021-09-03 2024-04-12 三荣技研股份有限公司 直接描绘装置及其控制方法
CN114200797B (zh) * 2021-12-14 2022-11-22 南京大学 一种用于纳米压印金属光栅拼接对齐的掩模及金属光栅拼接方法
CN119805879A (zh) * 2025-02-11 2025-04-11 合肥芯碁微电子装备股份有限公司 应用于直写光刻机的纠偏对位方法及装置、介质和光刻机

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10186683A (ja) 1996-12-20 1998-07-14 Hitachi Ltd セラミックス多層配線基板と薄膜パターンのアライメント方法
JP2009210726A (ja) 2008-03-03 2009-09-17 Hitachi Via Mechanics Ltd マスクレス露光装置
US20100060874A1 (en) 2008-09-11 2010-03-11 Samsung Electronics Co., Ltd. Maskless lithographic apparatus and methods of compensation for rotational alignment error using the same

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JP4273030B2 (ja) * 2004-03-29 2009-06-03 富士フイルム株式会社 露光装置の校正方法及び露光装置
US7368207B2 (en) * 2006-03-31 2008-05-06 Eastman Kodak Company Dynamic compensation system for maskless lithography
JP5211487B2 (ja) * 2007-01-25 2013-06-12 株式会社ニコン 露光方法及び露光装置並びにマイクロデバイスの製造方法
JP2009223262A (ja) * 2008-03-19 2009-10-01 Orc Mfg Co Ltd 露光システムおよび露光方法
US8670106B2 (en) * 2008-09-23 2014-03-11 Pinebrook Imaging, Inc. Optical imaging writer system
JP5355245B2 (ja) * 2009-06-25 2013-11-27 株式会社日立ハイテクノロジーズ 露光装置、露光方法、及び表示用パネル基板の製造方法
KR101678050B1 (ko) * 2009-11-16 2016-12-07 삼성전자 주식회사 오프 액시스 정렬을 이용한 마스크리스 노광 장치 및 방법
KR101678039B1 (ko) * 2010-10-01 2016-11-21 삼성전자 주식회사 마스크리스 노광 장치, 마스크리스 노광에서 노광 시작 위치와 자세를 결정하는 방법
KR101764169B1 (ko) * 2011-08-19 2017-08-02 삼성전자 주식회사 마스크리스 노광 장치와 이를 이용한 빔 위치 계측 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10186683A (ja) 1996-12-20 1998-07-14 Hitachi Ltd セラミックス多層配線基板と薄膜パターンのアライメント方法
JP2009210726A (ja) 2008-03-03 2009-09-17 Hitachi Via Mechanics Ltd マスクレス露光装置
US20100060874A1 (en) 2008-09-11 2010-03-11 Samsung Electronics Co., Ltd. Maskless lithographic apparatus and methods of compensation for rotational alignment error using the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140074124A (ko) * 2012-12-07 2014-06-17 엘지디스플레이 주식회사 마스크리스 노광 장치의 얼라인 방법
KR102020934B1 (ko) 2012-12-07 2019-09-11 엘지디스플레이 주식회사 마스크리스 노광 장치의 얼라인 방법
KR101854521B1 (ko) 2016-06-08 2018-05-03 인하대학교 산학협력단 Dmd를 이용한 노광시스템
KR20190032015A (ko) * 2017-09-19 2019-03-27 주식회사 리텍 Dmd에 입사하는 조사광 방향을 제어할 수 있는 노광 광학계 및 이를 구성하는 광 조사 광학계
KR102013194B1 (ko) 2017-09-19 2019-08-22 주식회사 리텍 Dmd에 입사하는 조사광 방향을 제어할 수 있는 노광 광학계 및 이를 구성하는 광 조사 광학계
KR20190035066A (ko) * 2017-09-26 2019-04-03 주식회사 리텍 고속 노광과 저속 노광이 가능한 ｄｍｄ 기반의 노광 장치
KR102042012B1 (ko) 2017-09-26 2019-11-08 주식회사 리텍 고속 노광과 저속 노광이 가능한 ｄｍｄ 기반의 노광 장치

Also Published As

Publication number Publication date
US8675180B2 (en) 2014-03-18
EP2385426A2 (en) 2011-11-09
EP2385426A3 (en) 2015-10-21
US20110273690A1 (en) 2011-11-10
JP2011237781A (ja) 2011-11-24

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