JP2011237781A - マスクレス露光装置とマスクレス露光でのオーバーレイのための整列方法 - Google Patents

マスクレス露光装置とマスクレス露光でのオーバーレイのための整列方法 Download PDF

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Publication number
JP2011237781A
JP2011237781A JP2011085329A JP2011085329A JP2011237781A JP 2011237781 A JP2011237781 A JP 2011237781A JP 2011085329 A JP2011085329 A JP 2011085329A JP 2011085329 A JP2011085329 A JP 2011085329A JP 2011237781 A JP2011237781 A JP 2011237781A
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JP
Japan
Prior art keywords
layer
alignment
substrate
mark
maskless exposure
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2011085329A
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English (en)
Japanese (ja)
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JP2011237781A5 (enExample
Inventor
Seong Min An
成 敏 安
Ho Suk Choi
▲ほ▼ 碩 崔
Sang Don Jang
尚 敦 張
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2011237781A publication Critical patent/JP2011237781A/ja
Publication of JP2011237781A5 publication Critical patent/JP2011237781A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011085329A 2010-05-06 2011-04-07 マスクレス露光装置とマスクレス露光でのオーバーレイのための整列方法 Pending JP2011237781A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0042384 2010-05-06
KR1020100042384A KR101059811B1 (ko) 2010-05-06 2010-05-06 마스크리스 노광 장치와 마스크리스 노광에서 오버레이를 위한 정렬 방법

Publications (2)

Publication Number Publication Date
JP2011237781A true JP2011237781A (ja) 2011-11-24
JP2011237781A5 JP2011237781A5 (enExample) 2014-05-22

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ID=44534739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011085329A Pending JP2011237781A (ja) 2010-05-06 2011-04-07 マスクレス露光装置とマスクレス露光でのオーバーレイのための整列方法

Country Status (4)

Country Link
US (1) US8675180B2 (enExample)
EP (1) EP2385426A3 (enExample)
JP (1) JP2011237781A (enExample)
KR (1) KR101059811B1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023504979A (ja) * 2019-10-08 2023-02-08 アプライド マテリアルズ インコーポレイテッド マスクレスリソグラフィシステム用ユニバーサル計測ファイル、プロトコル、及びプロセス
JPWO2023032962A1 (enExample) * 2021-09-03 2023-03-09

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KR102020934B1 (ko) * 2012-12-07 2019-09-11 엘지디스플레이 주식회사 마스크리스 노광 장치의 얼라인 방법
TWI607291B (zh) * 2013-04-17 2017-12-01 Orc Manufacturing Co Ltd Exposure device
KR101854521B1 (ko) 2016-06-08 2018-05-03 인하대학교 산학협력단 Dmd를 이용한 노광시스템
KR102271283B1 (ko) 2017-01-31 2021-07-02 에이에스엠엘 네델란즈 비.브이. 패턴 위치설정 정확도 증가 방법 및 시스템
KR102013194B1 (ko) * 2017-09-19 2019-08-22 주식회사 리텍 Dmd에 입사하는 조사광 방향을 제어할 수 있는 노광 광학계 및 이를 구성하는 광 조사 광학계
KR102042012B1 (ko) * 2017-09-26 2019-11-08 주식회사 리텍 고속 노광과 저속 노광이 가능한 ｄｍｄ 기반의 노광 장치
US10859924B2 (en) 2017-11-15 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device and system for performing the same
CN114442436B (zh) * 2020-10-30 2024-08-13 京东方科技集团股份有限公司 一种数字曝光设备和曝光方法
CN114200797B (zh) * 2021-12-14 2022-11-22 南京大学 一种用于纳米压印金属光栅拼接对齐的掩模及金属光栅拼接方法
CN119805879A (zh) * 2025-02-11 2025-04-11 合肥芯碁微电子装备股份有限公司 应用于直写光刻机的纠偏对位方法及装置、介质和光刻机

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JP2005283893A (ja) * 2004-03-29 2005-10-13 Fuji Photo Film Co Ltd 露光装置の校正方法及び露光装置
JP2009223262A (ja) * 2008-03-19 2009-10-01 Orc Mfg Co Ltd 露光システムおよび露光方法
JP2011007975A (ja) * 2009-06-25 2011-01-13 Hitachi High-Technologies Corp 露光装置、露光方法、及び表示用パネル基板の製造方法

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JP3309747B2 (ja) 1996-12-20 2002-07-29 株式会社日立製作所 セラミックス多層配線基板と薄膜パターンのアライメント方法
US7368207B2 (en) * 2006-03-31 2008-05-06 Eastman Kodak Company Dynamic compensation system for maskless lithography
JP5211487B2 (ja) * 2007-01-25 2013-06-12 株式会社ニコン 露光方法及び露光装置並びにマイクロデバイスの製造方法
JP2009210726A (ja) 2008-03-03 2009-09-17 Hitachi Via Mechanics Ltd マスクレス露光装置
KR20100030999A (ko) 2008-09-11 2010-03-19 삼성전자주식회사 마스크리스 노광 장치 및 이를 이용한 정렬 오차의 보상 방법
US8670106B2 (en) * 2008-09-23 2014-03-11 Pinebrook Imaging, Inc. Optical imaging writer system
KR101678050B1 (ko) * 2009-11-16 2016-12-07 삼성전자 주식회사 오프 액시스 정렬을 이용한 마스크리스 노광 장치 및 방법
KR101678039B1 (ko) * 2010-10-01 2016-11-21 삼성전자 주식회사 마스크리스 노광 장치, 마스크리스 노광에서 노광 시작 위치와 자세를 결정하는 방법
KR101764169B1 (ko) * 2011-08-19 2017-08-02 삼성전자 주식회사 마스크리스 노광 장치와 이를 이용한 빔 위치 계측 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005283893A (ja) * 2004-03-29 2005-10-13 Fuji Photo Film Co Ltd 露光装置の校正方法及び露光装置
JP2009223262A (ja) * 2008-03-19 2009-10-01 Orc Mfg Co Ltd 露光システムおよび露光方法
JP2011007975A (ja) * 2009-06-25 2011-01-13 Hitachi High-Technologies Corp 露光装置、露光方法、及び表示用パネル基板の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023504979A (ja) * 2019-10-08 2023-02-08 アプライド マテリアルズ インコーポレイテッド マスクレスリソグラフィシステム用ユニバーサル計測ファイル、プロトコル、及びプロセス
JP7356585B2 (ja) 2019-10-08 2023-10-04 アプライド マテリアルズ インコーポレイテッド マスクレスリソグラフィシステム用ユニバーサル計測ファイル、プロトコル、及びプロセス
JPWO2023032962A1 (enExample) * 2021-09-03 2023-03-09
WO2023032962A1 (ja) * 2021-09-03 2023-03-09 サンエー技研株式会社 直接描画装置及びその制御方法

Also Published As

Publication number Publication date
EP2385426A2 (en) 2011-11-09
US20110273690A1 (en) 2011-11-10
US8675180B2 (en) 2014-03-18
KR101059811B1 (ko) 2011-08-26
EP2385426A3 (en) 2015-10-21

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