KR101057605B1 - 감광성 수지 조성물 및 패턴 형성 방법 - Google Patents
감광성 수지 조성물 및 패턴 형성 방법 Download PDFInfo
- Publication number
- KR101057605B1 KR101057605B1 KR1020087029891A KR20087029891A KR101057605B1 KR 101057605 B1 KR101057605 B1 KR 101057605B1 KR 1020087029891 A KR1020087029891 A KR 1020087029891A KR 20087029891 A KR20087029891 A KR 20087029891A KR 101057605 B1 KR101057605 B1 KR 101057605B1
- Authority
- KR
- South Korea
- Prior art keywords
- group
- photosensitive resin
- acid
- resin composition
- film
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80609006P | 2006-06-28 | 2006-06-28 | |
US60/806,090 | 2006-06-28 | ||
PCT/JP2007/062822 WO2008001782A1 (fr) | 2006-06-28 | 2007-06-26 | Composition de résine photosensible et procédé de formation d'un motif |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090007636A KR20090007636A (ko) | 2009-01-19 |
KR101057605B1 true KR101057605B1 (ko) | 2011-08-18 |
Family
ID=38845546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020087029891A KR101057605B1 (ko) | 2006-06-28 | 2007-06-26 | 감광성 수지 조성물 및 패턴 형성 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4943428B2 (ja) |
KR (1) | KR101057605B1 (ja) |
TW (1) | TW200827934A (ja) |
WO (1) | WO2008001782A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4890153B2 (ja) * | 2006-08-11 | 2012-03-07 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
JP5196025B2 (ja) * | 2009-09-15 | 2013-05-15 | Jsr株式会社 | 上層膜形成組成物及びフォトレジストパターンの形成方法 |
JP2011170207A (ja) * | 2010-02-19 | 2011-09-01 | Jeol Ltd | 微細構造物の製造方法 |
CN109071576B (zh) | 2016-05-03 | 2021-12-28 | 美国陶氏有机硅公司 | 倍半硅氧烷树脂和氧杂胺组合物 |
JP2022000688A (ja) * | 2020-06-18 | 2022-01-04 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002311591A (ja) * | 2001-04-18 | 2002-10-23 | Clariant (Japan) Kk | 層間絶縁膜の形成に用いられる感光性組成物 |
JP2006106311A (ja) | 2004-10-05 | 2006-04-20 | Shin Etsu Chem Co Ltd | ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0829987A (ja) * | 1994-07-19 | 1996-02-02 | Nippon Telegr & Teleph Corp <Ntt> | ポジ型シリコーンレジスト材料 |
JP3120402B2 (ja) * | 1998-09-03 | 2000-12-25 | インターナショナル・ビジネス・マシーンズ・コーポレ−ション | 不活性化芳香族アミン化合物を含むフォトレジスト組成物 |
JP4187879B2 (ja) * | 1999-08-06 | 2008-11-26 | 東京応化工業株式会社 | 感放射線レジスト組成物 |
AU2003302990A1 (en) * | 2002-12-02 | 2004-07-09 | Tokyo Ohka Kogyo Co., Ltd. | Chemical amplification type silicone base positive photoresist composition |
WO2005007747A2 (en) * | 2003-07-03 | 2005-01-27 | Dow Corning Corporation | Photosensitive silsesquioxane resin |
US6939664B2 (en) * | 2003-10-24 | 2005-09-06 | International Business Machines Corporation | Low-activation energy silicon-containing resist system |
US20050106494A1 (en) * | 2003-11-19 | 2005-05-19 | International Business Machines Corporation | Silicon-containing resist systems with cyclic ketal protecting groups |
JP2007133185A (ja) * | 2005-11-10 | 2007-05-31 | Tokyo Ohka Kogyo Co Ltd | 感光性樹脂組成物及びパターン形成方法 |
JP2007133266A (ja) * | 2005-11-11 | 2007-05-31 | Tokyo Ohka Kogyo Co Ltd | 感光性樹脂組成物及びパターン形成方法 |
-
2007
- 2007-06-26 KR KR1020087029891A patent/KR101057605B1/ko active IP Right Grant
- 2007-06-26 WO PCT/JP2007/062822 patent/WO2008001782A1/ja active Application Filing
- 2007-06-26 JP JP2008522594A patent/JP4943428B2/ja active Active
- 2007-06-27 TW TW96123370A patent/TW200827934A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002311591A (ja) * | 2001-04-18 | 2002-10-23 | Clariant (Japan) Kk | 層間絶縁膜の形成に用いられる感光性組成物 |
JP2006106311A (ja) | 2004-10-05 | 2006-04-20 | Shin Etsu Chem Co Ltd | ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4943428B2 (ja) | 2012-05-30 |
TWI361955B (ja) | 2012-04-11 |
KR20090007636A (ko) | 2009-01-19 |
TW200827934A (en) | 2008-07-01 |
WO2008001782A1 (fr) | 2008-01-03 |
JPWO2008001782A1 (ja) | 2009-11-26 |
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