KR101057605B1 - 감광성 수지 조성물 및 패턴 형성 방법 - Google Patents

감광성 수지 조성물 및 패턴 형성 방법 Download PDF

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KR101057605B1
KR101057605B1 KR1020087029891A KR20087029891A KR101057605B1 KR 101057605 B1 KR101057605 B1 KR 101057605B1 KR 1020087029891 A KR1020087029891 A KR 1020087029891A KR 20087029891 A KR20087029891 A KR 20087029891A KR 101057605 B1 KR101057605 B1 KR 101057605B1
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South Korea
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group
photosensitive resin
acid
resin composition
film
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KR20090007636A (ko
Inventor
히사노부 하라다
산린 후
다이스케 가와나
에릭 스코트 모이어
가즈후미 사토
이사무 다카기
고지 요네무라
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도오꾜오까고오교 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
KR1020087029891A 2006-06-28 2007-06-26 감광성 수지 조성물 및 패턴 형성 방법 Active KR101057605B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80609006P 2006-06-28 2006-06-28
US60/806,090 2006-06-28
PCT/JP2007/062822 WO2008001782A1 (fr) 2006-06-28 2007-06-26 Composition de résine photosensible et procédé de formation d'un motif

Publications (2)

Publication Number Publication Date
KR20090007636A KR20090007636A (ko) 2009-01-19
KR101057605B1 true KR101057605B1 (ko) 2011-08-18

Family

ID=38845546

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Application Number Title Priority Date Filing Date
KR1020087029891A Active KR101057605B1 (ko) 2006-06-28 2007-06-26 감광성 수지 조성물 및 패턴 형성 방법

Country Status (4)

Country Link
JP (1) JP4943428B2 (enrdf_load_stackoverflow)
KR (1) KR101057605B1 (enrdf_load_stackoverflow)
TW (1) TW200827934A (enrdf_load_stackoverflow)
WO (1) WO2008001782A1 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4890153B2 (ja) * 2006-08-11 2012-03-07 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
TW201118505A (en) * 2009-09-15 2011-06-01 Jsr Corp Upper layer film forming composition and method for forming photoresist pattern
JP2011170207A (ja) * 2010-02-19 2011-09-01 Jeol Ltd 微細構造物の製造方法
CN109071576B (zh) 2016-05-03 2021-12-28 美国陶氏有机硅公司 倍半硅氧烷树脂和氧杂胺组合物
JP7537368B2 (ja) * 2020-06-18 2024-08-21 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR102769114B1 (ko) * 2020-07-01 2025-02-18 도쿄 오카 고교 가부시키가이샤 화학 증폭형 감광성 조성물, 감광성 드라이 필름, 도금용 주형 부착 기판의 제조 방법, 및 도금 조형물의 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002311591A (ja) * 2001-04-18 2002-10-23 Clariant (Japan) Kk 層間絶縁膜の形成に用いられる感光性組成物
JP2006106311A (ja) 2004-10-05 2006-04-20 Shin Etsu Chem Co Ltd ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0829987A (ja) * 1994-07-19 1996-02-02 Nippon Telegr & Teleph Corp <Ntt> ポジ型シリコーンレジスト材料
JP3120402B2 (ja) * 1998-09-03 2000-12-25 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 不活性化芳香族アミン化合物を含むフォトレジスト組成物
JP4187879B2 (ja) * 1999-08-06 2008-11-26 東京応化工業株式会社 感放射線レジスト組成物
WO2004055598A1 (ja) * 2002-12-02 2004-07-01 Tokyo Ohka Kogyo Co., Ltd. 化学増幅型シリコーン系ポジ型ホトレジスト組成物
EP1660561B1 (en) * 2003-07-03 2014-02-12 Dow Corning Corporation Photosensitive silsesquioxane resin
US6939664B2 (en) * 2003-10-24 2005-09-06 International Business Machines Corporation Low-activation energy silicon-containing resist system
US20050106494A1 (en) * 2003-11-19 2005-05-19 International Business Machines Corporation Silicon-containing resist systems with cyclic ketal protecting groups
JP2007133185A (ja) * 2005-11-10 2007-05-31 Tokyo Ohka Kogyo Co Ltd 感光性樹脂組成物及びパターン形成方法
JP2007133266A (ja) * 2005-11-11 2007-05-31 Tokyo Ohka Kogyo Co Ltd 感光性樹脂組成物及びパターン形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002311591A (ja) * 2001-04-18 2002-10-23 Clariant (Japan) Kk 層間絶縁膜の形成に用いられる感光性組成物
JP2006106311A (ja) 2004-10-05 2006-04-20 Shin Etsu Chem Co Ltd ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法

Also Published As

Publication number Publication date
TWI361955B (enrdf_load_stackoverflow) 2012-04-11
JP4943428B2 (ja) 2012-05-30
KR20090007636A (ko) 2009-01-19
JPWO2008001782A1 (ja) 2009-11-26
WO2008001782A1 (fr) 2008-01-03
TW200827934A (en) 2008-07-01

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