KR101054785B1 - 반도체 발광 소자 및 그 제조 방법 - Google Patents

반도체 발광 소자 및 그 제조 방법 Download PDF

Info

Publication number
KR101054785B1
KR101054785B1 KR1020060136690A KR20060136690A KR101054785B1 KR 101054785 B1 KR101054785 B1 KR 101054785B1 KR 1020060136690 A KR1020060136690 A KR 1020060136690A KR 20060136690 A KR20060136690 A KR 20060136690A KR 101054785 B1 KR101054785 B1 KR 101054785B1
Authority
KR
South Korea
Prior art keywords
barrier layer
layer
type impurity
delete delete
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020060136690A
Other languages
English (en)
Korean (ko)
Other versions
KR20070072395A (ko
Inventor
시-난 옌
쯔-쥔 치우
위-쥔 션
칭-푸 차이
Original Assignee
에피스타 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에피스타 코포레이션 filed Critical 에피스타 코포레이션
Publication of KR20070072395A publication Critical patent/KR20070072395A/ko
Application granted granted Critical
Publication of KR101054785B1 publication Critical patent/KR101054785B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

Landscapes

  • Led Devices (AREA)
KR1020060136690A 2005-12-29 2006-12-28 반도체 발광 소자 및 그 제조 방법 Active KR101054785B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW094147367A TWI282636B (en) 2005-12-29 2005-12-29 Semiconductor light-emitting device and manufacturing method thereof
TW094147367 2005-12-29

Publications (2)

Publication Number Publication Date
KR20070072395A KR20070072395A (ko) 2007-07-04
KR101054785B1 true KR101054785B1 (ko) 2011-08-05

Family

ID=38223452

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060136690A Active KR101054785B1 (ko) 2005-12-29 2006-12-28 반도체 발광 소자 및 그 제조 방법

Country Status (4)

Country Link
US (1) US7615773B2 (https=)
JP (1) JP2007184585A (https=)
KR (1) KR101054785B1 (https=)
TW (1) TWI282636B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI360891B (en) * 2007-04-09 2012-03-21 Epistar Corp Light emitting device
KR101316492B1 (ko) 2007-04-23 2013-10-10 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
KR100905877B1 (ko) * 2007-11-19 2009-07-03 삼성전기주식회사 질화물 반도체 소자
TWI371887B (en) 2008-07-11 2012-09-01 Iner Aec Executive Yuan Method for supplying fuel to fuel cell
US7953134B2 (en) 2008-12-31 2011-05-31 Epistar Corporation Semiconductor light-emitting device
CN103426985B (zh) * 2012-05-25 2016-10-12 徐亦敏 发光二极管
KR101955313B1 (ko) * 2012-11-12 2019-03-08 엘지이노텍 주식회사 발광소자
JP6679767B1 (ja) * 2019-01-07 2020-04-15 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子及び半導体発光素子の製造方法
JP7260807B2 (ja) * 2020-12-24 2023-04-19 日亜化学工業株式会社 窒化物半導体発光素子およびその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000332364A (ja) * 1999-05-17 2000-11-30 Matsushita Electric Ind Co Ltd 窒化物半導体素子
JP2001168471A (ja) 1998-12-15 2001-06-22 Nichia Chem Ind Ltd 窒化物半導体発光素子
US20020190261A1 (en) 2000-10-06 2002-12-19 Jithamithra Sarathy Method and apparatus for bit-rate and format insensitive performance monitoring of lightwave signals

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07122812A (ja) * 1993-10-27 1995-05-12 Fujitsu Ltd 半導体レーザ
JPH07263808A (ja) * 1994-03-18 1995-10-13 Fujitsu Ltd 半導体レーザ
US6542526B1 (en) * 1996-10-30 2003-04-01 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
JP2000042685A (ja) * 1998-05-19 2000-02-15 Reizu Eng:Kk 貫通孔を有するディスク部の形成方法、貫通孔を有するディスク部を備えた自動車用ホイ―ルの製造方法、熱間鍛造装置
TW425726B (en) 1999-10-08 2001-03-11 Epistar Corp A high-luminance light emitting diode with distributed contact layer
JP3711020B2 (ja) * 1999-12-27 2005-10-26 三洋電機株式会社 発光素子
CN1158714C (zh) 2000-06-20 2004-07-21 晶元光电股份有限公司 具有分布式接触层的高亮度发光二极管
JP2002270969A (ja) * 2001-03-07 2002-09-20 Sharp Corp 窒化物半導体発光素子およびそれを用いた光学装置
JP4390433B2 (ja) * 2002-06-19 2009-12-24 シャープ株式会社 窒化物半導体レーザ及びその製造方法
JP4285949B2 (ja) * 2002-06-27 2009-06-24 シャープ株式会社 窒化物半導体発光素子
TW544958B (en) 2002-07-15 2003-08-01 Epistar Corp Light emitting diode with an adhesive layer and its manufacturing method
JP2004087908A (ja) * 2002-08-28 2004-03-18 Sharp Corp 窒化物半導体発光素子、その製造方法、それを搭載した光学装置
TWI234915B (en) 2002-11-18 2005-06-21 Pioneer Corp Semiconductor light-emitting element and method of manufacturing the same
CN100573932C (zh) 2003-05-16 2009-12-23 晶元光电股份有限公司 具有粘结层的发光二极管及其制造方法
JP2005302784A (ja) * 2004-04-06 2005-10-27 Matsushita Electric Ind Co Ltd 半導体発光素子及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168471A (ja) 1998-12-15 2001-06-22 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2000332364A (ja) * 1999-05-17 2000-11-30 Matsushita Electric Ind Co Ltd 窒化物半導体素子
US20020190261A1 (en) 2000-10-06 2002-12-19 Jithamithra Sarathy Method and apparatus for bit-rate and format insensitive performance monitoring of lightwave signals

Also Published As

Publication number Publication date
JP2007184585A (ja) 2007-07-19
TW200725942A (en) 2007-07-01
US7615773B2 (en) 2009-11-10
US20070152207A1 (en) 2007-07-05
TWI282636B (en) 2007-06-11
KR20070072395A (ko) 2007-07-04

Similar Documents

Publication Publication Date Title
US7385226B2 (en) Light-emitting device
CN108365062B (zh) 半导体元件
US7132695B2 (en) Light emitting diode having a dual dopant contact layer
US20070267640A1 (en) Semiconductor light emitting diode and method of manufacturing the same
JP3839799B2 (ja) 半導体発光素子
CN109817777B (zh) 半导体元件
CN116072781B (zh) 发光元件
KR100616591B1 (ko) 질화물 반도체 발광소자 및 그 제조방법
KR101054785B1 (ko) 반도체 발광 소자 및 그 제조 방법
USRE43426E1 (en) Fabrication method of transparent electrode on visible light-emitting diode
KR100687783B1 (ko) 발광 장치
KR20090115322A (ko) 그룹 3족 질화물계 반도체 소자
US20150200342A1 (en) LIGHT EMITTING DEVICE HAVING MgO PYRAMID STRUCTURE AND METHOD FOR FABRICATING THE SAME
KR100586973B1 (ko) 돌기부가 형성된 기판을 구비한 질화물 반도체 발광소자
KR101459770B1 (ko) 그룹 3족 질화물계 반도체 소자
CN109860363B (zh) 半导体元件
KR20050032159A (ko) 질화갈륨계 반도체 발광 소자 및 그 제조방법
KR20010068552A (ko) 질화물 발광 소자
KR101824322B1 (ko) 질화갈륨계 고효율 발광다이오드 및 그의 제조방법
CN101000940A (zh) 半导体发光元件及其制造方法
KR100721160B1 (ko) 질화물 반도체 소자
KR101353577B1 (ko) 반도체 발광소자 및 그 제조방법
KR100679825B1 (ko) 질화물 발광 다이오드
KR20110060666A (ko) 질화물 반도체 발광소자 및 그의 제조방법
KR20100059324A (ko) 질화물 반도체 발광소자

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140723

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20150723

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160630

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170704

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20180628

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R11 Change to the name of applicant or owner or transfer of ownership requested

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R11-ASN-PN2301 (AS PROVIDED BY THE NATIONAL OFFICE)

R13 Change to the name of applicant or owner recorded

Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R13-ASN-PN2301 (AS PROVIDED BY THE NATIONAL OFFICE)