KR101045251B1 - 포지티브 레지스트 조성물 및 상기 레지스트 조성물을 사용한 패턴 형성방법 - Google Patents

포지티브 레지스트 조성물 및 상기 레지스트 조성물을 사용한 패턴 형성방법 Download PDF

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Publication number
KR101045251B1
KR101045251B1 KR1020040040758A KR20040040758A KR101045251B1 KR 101045251 B1 KR101045251 B1 KR 101045251B1 KR 1020040040758 A KR1020040040758 A KR 1020040040758A KR 20040040758 A KR20040040758 A KR 20040040758A KR 101045251 B1 KR101045251 B1 KR 101045251B1
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South Korea
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alkyl group
general formula
repeating unit
acid
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KR1020040040758A
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Korean (ko)
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KR20040104934A (ko
Inventor
사토겐이치로
니시야마후미유키
간나신이치
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후지필름 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020040040758A 2003-06-04 2004-06-04 포지티브 레지스트 조성물 및 상기 레지스트 조성물을 사용한 패턴 형성방법 Expired - Fee Related KR101045251B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00159550 2003-06-04
JP2003159550A JP4360836B2 (ja) 2003-06-04 2003-06-04 ポジ型レジスト組成物

Publications (2)

Publication Number Publication Date
KR20040104934A KR20040104934A (ko) 2004-12-13
KR101045251B1 true KR101045251B1 (ko) 2011-06-29

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Application Number Title Priority Date Filing Date
KR1020040040758A Expired - Fee Related KR101045251B1 (ko) 2003-06-04 2004-06-04 포지티브 레지스트 조성물 및 상기 레지스트 조성물을 사용한 패턴 형성방법

Country Status (2)

Country Link
JP (1) JP4360836B2 (enrdf_load_stackoverflow)
KR (1) KR101045251B1 (enrdf_load_stackoverflow)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005300998A (ja) 2004-04-13 2005-10-27 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP2006349800A (ja) * 2005-06-14 2006-12-28 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターン形成方法
JP4679990B2 (ja) * 2005-07-22 2011-05-11 東京応化工業株式会社 ポジ型レジスト組成物の製造方法、ポジ型レジスト組成物およびレジストパターン形成方法
JP4668048B2 (ja) * 2005-12-02 2011-04-13 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
TWI477909B (zh) 2006-01-24 2015-03-21 Fujifilm Corp 正型感光性組成物及使用它之圖案形成方法
TWI358613B (en) * 2006-03-10 2012-02-21 Rohm & Haas Elect Mat Compositions and processes for photolithography
JP5165227B2 (ja) 2006-10-31 2013-03-21 東京応化工業株式会社 化合物および高分子化合物
JP4818882B2 (ja) * 2006-10-31 2011-11-16 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
KR101401755B1 (ko) 2006-10-31 2014-05-30 도쿄 오카 고교 가부시키가이샤 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
JP4982288B2 (ja) * 2007-04-13 2012-07-25 富士フイルム株式会社 パターン形成方法
EP2189845B1 (en) * 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
JP6054608B2 (ja) * 2011-02-15 2016-12-27 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5775772B2 (ja) * 2011-09-22 2015-09-09 富士フイルム株式会社 有機溶剤現像用の感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法
JP5965733B2 (ja) 2012-06-12 2016-08-10 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
JP6060012B2 (ja) 2013-03-15 2017-01-11 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
KR102366344B1 (ko) * 2017-12-18 2022-02-23 가부시키가이샤 닛폰 쇼쿠바이 중합체, 경화성 수지 조성물, 및 그 용도

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000035130A (ko) * 1998-11-02 2000-06-26 카나가와 치히로 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법
JP2000338674A (ja) 1999-05-26 2000-12-08 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
JP2002303978A (ja) 2001-04-05 2002-10-18 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2003107710A (ja) 2001-09-28 2003-04-09 Fuji Photo Film Co Ltd ポジ型レジスト組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000035130A (ko) * 1998-11-02 2000-06-26 카나가와 치히로 신규한 에스테르 화합물, 고분자 화합물, 레지스트 재료및 패턴 형성 방법
JP2000338674A (ja) 1999-05-26 2000-12-08 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
JP2002303978A (ja) 2001-04-05 2002-10-18 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2003107710A (ja) 2001-09-28 2003-04-09 Fuji Photo Film Co Ltd ポジ型レジスト組成物

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Publication number Publication date
JP4360836B2 (ja) 2009-11-11
KR20040104934A (ko) 2004-12-13
JP2004361629A (ja) 2004-12-24

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