KR101015036B1 - 나노구조화된 부재의 제조방법 및 피복방법 - Google Patents

나노구조화된 부재의 제조방법 및 피복방법 Download PDF

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KR101015036B1
KR101015036B1 KR1020087001985A KR20087001985A KR101015036B1 KR 101015036 B1 KR101015036 B1 KR 101015036B1 KR 1020087001985 A KR1020087001985 A KR 1020087001985A KR 20087001985 A KR20087001985 A KR 20087001985A KR 101015036 B1 KR101015036 B1 KR 101015036B1
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nanosprings
substrate
mat
nanostructured
catalyst
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Korean (ko)
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KR20080035581A (ko
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그랜트 노튼
데이빗 멕일로이
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아이다호 리서치 파운데이션, 아이엔씨.
워싱톤 스테이트 유니버시티 리서치 파운데이션
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56After-treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/38Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
    • B01J23/48Silver or gold
    • B01J23/52Gold
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02Impregnation, coating or precipitation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/34Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
    • B01J37/341Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation
    • B01J37/347Ionic or cathodic spraying; Electric discharge
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0272Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks
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    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate
    • C30B25/105Heating of the reaction chamber or the substrate by irradiation or electric discharge
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    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605Products containing multiple oriented crystallites, e.g. columnar crystallites
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30Hydrogen technology
    • Y02E60/32Hydrogen storage
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24628Nonplanar uniform thickness material
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    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/00Stock material or miscellaneous articles
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    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component
    • Y10T428/249924Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
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    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/249921Web or sheet containing structurally defined element or component
    • Y10T428/249924Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
    • Y10T428/249928Fiber embedded in a ceramic, glass, or carbon matrix

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  • Chemical & Material Sciences (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
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  • Plasma & Fusion (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Catalysts (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Hydrogen, Water And Hydrids (AREA)
KR1020087001985A 2005-06-24 2006-06-23 나노구조화된 부재의 제조방법 및 피복방법 Expired - Fee Related KR101015036B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US69368305P 2005-06-24 2005-06-24
US60/693,683 2005-06-24
US74473306P 2006-04-12 2006-04-12
US60/744,733 2006-04-12

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KR20080035581A KR20080035581A (ko) 2008-04-23
KR101015036B1 true KR101015036B1 (ko) 2011-02-16

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US (2) US20100215915A1 (enExample)
EP (1) EP1917101A4 (enExample)
JP (1) JP5456309B2 (enExample)
KR (1) KR101015036B1 (enExample)
CN (2) CN102353696B (enExample)
CA (1) CA2613004C (enExample)
IL (1) IL188363A0 (enExample)
SG (1) SG174018A1 (enExample)
WO (1) WO2007002369A2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007002369A2 (en) * 2005-06-24 2007-01-04 Washington State University Research Foundation Method for manufacture and coating of nanostructured components
US7771512B2 (en) * 2005-06-24 2010-08-10 Washington State University Research Foundation Apparatus with high surface area nanostructures for hydrogen storage, and methods of storing hydrogen
KR100802182B1 (ko) * 2006-09-27 2008-02-12 한국전자통신연구원 나노선 필터, 그 제조방법 및 흡착물 제거방법, 이를구비한 필터링 장치
US20110053020A1 (en) * 2007-11-09 2011-03-03 Washington State University Research Foundation Catalysts and related methods
WO2009094479A1 (en) * 2008-01-22 2009-07-30 Gonano Technologies, Inc. Nanostructured high surface area electrodes for energy storage devices
US20110076841A1 (en) * 2009-09-30 2011-03-31 Kahen Keith B Forming catalyzed ii-vi semiconductor nanowires
WO2011050345A1 (en) 2009-10-23 2011-04-28 Gonano Technologies, Inc. Catalyst materials for reforming carbon dioxide and related devices, systems, and methods
WO2011100638A1 (en) 2010-02-11 2011-08-18 Gonano Technologies, Inc. Nanostructured high surface area supports for biomolecule, chemical, drug, and cell attachment applications and methods of making the same
CN102011192B (zh) * 2010-09-21 2013-01-02 南京航空航天大学 载有功能基团的GaN纳米线阵列及其制法和用途
US8728464B2 (en) 2010-12-02 2014-05-20 University Of Idaho Method for stimulating osteogenesis
CN102750333B (zh) * 2012-05-31 2014-05-07 华中科技大学 一种用于提取半导体纳米结构特征尺寸的方法
KR101749505B1 (ko) 2013-02-15 2017-06-21 삼성에스디아이 주식회사 음극 활물질 및 이를 채용한 음극과 리튬 전지
JP6101977B2 (ja) 2013-03-13 2017-03-29 学校法人沖縄科学技術大学院大学学園 アモルファス半導体量子ドットの金属誘起ナノ結晶化
AU2015300742A1 (en) * 2014-08-08 2017-03-30 Olanrewaju W. Tanimola Methods for synthesis of graphene derivatives and functional materials from asphaltenes, graphene derivatives, 2d materials and applications of use
JP6367652B2 (ja) * 2014-08-27 2018-08-01 国立研究開発法人物質・材料研究機構 シリコン(Si)系ナノ構造材料及びその製造方法
WO2016135713A1 (en) * 2015-02-23 2016-09-01 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd Self-processing synthesis of hybrid nanostructures
CN108122999B (zh) * 2016-11-29 2019-10-22 中国科学院金属研究所 基于Pt纳米颗粒修饰GaN纳米线的紫外光电探测器及其制造方法
CN108906078B (zh) * 2018-07-20 2021-05-11 上海理工大学 一种高效Pd/Co3O4块体催化剂的制备方法
JP7125229B2 (ja) * 2018-09-20 2022-08-24 トヨタ自動車株式会社 クラスター担持触媒及びその製造方法
CN109444251B (zh) * 2018-11-23 2021-12-21 亿纳谱(浙江)生物科技有限公司 纳米基质在核酸检测中的应用
CN109590028A (zh) * 2018-11-28 2019-04-09 浙江工商大学 一种利用超声雾化等离子体反应制备纳米级催化剂的方法
CN112707384A (zh) * 2020-12-17 2021-04-27 中国科学技术大学 一种改性碳纳米管、其制备方法及应用
CN114769089A (zh) * 2022-04-25 2022-07-22 四川大学 一种采用pecvd涂层敷形保护的方法
CN117658143A (zh) * 2023-12-01 2024-03-08 齐齐哈尔翔科新材料有限公司 一种SiC纳米弹簧的制备方法
CN119680611B (zh) * 2024-12-31 2025-09-26 中国地质大学(武汉) 一种高产氢活性的g-C3N4/Ag@NiBx光催化材料及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040112964A1 (en) * 2002-09-30 2004-06-17 Nanosys, Inc. Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4073750A (en) * 1976-05-20 1978-02-14 Exxon Research & Engineering Co. Method for preparing a highly dispersed supported nickel catalyst
GB8609249D0 (en) * 1986-04-16 1986-05-21 Alcan Int Ltd Anodic oxide membrane catalyst support
US5879827A (en) * 1997-10-10 1999-03-09 Minnesota Mining And Manufacturing Company Catalyst for membrane electrode assembly and method of making
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US6297063B1 (en) * 1999-10-25 2001-10-02 Agere Systems Guardian Corp. In-situ nano-interconnected circuit devices and method for making the same
EP1129990A1 (en) * 2000-02-25 2001-09-05 Lucent Technologies Inc. Process for controlled growth of carbon nanotubes
WO2002079514A1 (en) * 2001-01-10 2002-10-10 The Trustees Of Boston College Dna-bridged carbon nanotube arrays
JP4705251B2 (ja) * 2001-01-26 2011-06-22 本田技研工業株式会社 Mhタンク
US20070092437A1 (en) * 2001-12-11 2007-04-26 Young-Kyun Kwon Increasing hydrogen adsorption of nanostructured storage materials by modifying sp2 covalent bonds
US6672077B1 (en) * 2001-12-11 2004-01-06 Nanomix, Inc. Hydrogen storage in nanostructure with physisorption
CA2470025C (en) * 2001-12-21 2012-02-21 Battelle Memorial Institute Carbon nanotube-containing structures, methods of making, and processes using same
US7169489B2 (en) * 2002-03-15 2007-01-30 Fuelsell Technologies, Inc. Hydrogen storage, distribution, and recovery system
US6709497B2 (en) * 2002-05-09 2004-03-23 Texaco Ovonic Hydrogen Systems Llc Honeycomb hydrogen storage structure
JP3821223B2 (ja) * 2002-05-24 2006-09-13 独立行政法人科学技術振興機構 金属酸化物ナノチューブ及びその製法
US6991773B2 (en) * 2002-08-19 2006-01-31 Nanomix, Inc. Boron-oxide and related compounds for hydrogen storage
US6858521B2 (en) * 2002-12-31 2005-02-22 Samsung Electronics Co., Ltd. Method for fabricating spaced-apart nanostructures
WO2004050547A2 (en) * 2002-09-12 2004-06-17 The Trustees Of Boston College Metal oxide nanostructures with hierarchical morphology
US7163659B2 (en) * 2002-12-03 2007-01-16 Hewlett-Packard Development Company, L.P. Free-standing nanowire sensor and method for detecting an analyte in a fluid
AU2003300816A1 (en) * 2002-12-06 2004-06-30 The Penn State Research Foundation Synthesis of coiled carbon nanotubes by microwave chemical vapor deposition
EP1569790A4 (en) * 2002-12-12 2006-09-20 Entegris Inc POROUS SINTERED COMPOSITE MATERIALS
US7323043B2 (en) * 2003-07-28 2008-01-29 Deere & Company Storage container associated with a thermal energy management system
US8541054B2 (en) * 2003-09-08 2013-09-24 Honda Motor Co., Ltd Methods for preparation of one-dimensional carbon nanostructures
JP2007504086A (ja) * 2003-09-03 2007-03-01 本田技研工業株式会社 一次元炭素ナノ構造体の製造方法
JP4167607B2 (ja) * 2004-02-27 2008-10-15 株式会社豊田自動織機 水素貯蔵タンク
US7425232B2 (en) * 2004-04-05 2008-09-16 Naturalnano Research, Inc. Hydrogen storage apparatus comprised of halloysite
FR2885898B1 (fr) * 2005-05-17 2007-07-06 Commissariat Energie Atomique Composant microfluidique comprenant au moins un canal rempli de nanotubes et procede de fabrication d'un tel composant microfluidique.
WO2007002369A2 (en) * 2005-06-24 2007-01-04 Washington State University Research Foundation Method for manufacture and coating of nanostructured components
US7771512B2 (en) * 2005-06-24 2010-08-10 Washington State University Research Foundation Apparatus with high surface area nanostructures for hydrogen storage, and methods of storing hydrogen
US20110053020A1 (en) * 2007-11-09 2011-03-03 Washington State University Research Foundation Catalysts and related methods

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040112964A1 (en) * 2002-09-30 2004-06-17 Nanosys, Inc. Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites

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