SG174018A1 - Method for manufacture and coating ofnanostructured components - Google Patents
Method for manufacture and coating ofnanostructured components Download PDFInfo
- Publication number
- SG174018A1 SG174018A1 SG2011054707A SG2011054707A SG174018A1 SG 174018 A1 SG174018 A1 SG 174018A1 SG 2011054707 A SG2011054707 A SG 2011054707A SG 2011054707 A SG2011054707 A SG 2011054707A SG 174018 A1 SG174018 A1 SG 174018A1
- Authority
- SG
- Singapore
- Prior art keywords
- nanosprings
- substrate
- mat
- nanostructure
- nanowires
- Prior art date
Links
- 238000000576 coating method Methods 0.000 title claims description 13
- 239000011248 coating agent Substances 0.000 title claims description 12
- 238000000034 method Methods 0.000 title abstract description 66
- 238000004519 manufacturing process Methods 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 15
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 229910052737 gold Inorganic materials 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052723 transition metal Inorganic materials 0.000 claims 2
- 150000003624 transition metals Chemical class 0.000 claims 2
- 239000002086 nanomaterial Substances 0.000 abstract description 84
- 239000003054 catalyst Substances 0.000 abstract description 65
- 239000002070 nanowire Substances 0.000 abstract description 63
- 239000002105 nanoparticle Substances 0.000 abstract description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 47
- 239000002243 precursor Substances 0.000 abstract description 26
- 230000003197 catalytic effect Effects 0.000 abstract description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 22
- 230000015572 biosynthetic process Effects 0.000 abstract description 22
- 239000001257 hydrogen Substances 0.000 abstract description 22
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 22
- 230000008569 process Effects 0.000 abstract description 22
- 238000003786 synthesis reaction Methods 0.000 abstract description 19
- 239000007789 gas Substances 0.000 abstract description 16
- 238000003860 storage Methods 0.000 abstract description 12
- 239000010409 thin film Substances 0.000 abstract description 11
- 238000009826 distribution Methods 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 238000009835 boiling Methods 0.000 abstract description 3
- 239000010931 gold Substances 0.000 description 66
- 239000002245 particle Substances 0.000 description 47
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 38
- 239000000377 silicon dioxide Substances 0.000 description 22
- 238000000151 deposition Methods 0.000 description 20
- 230000008021 deposition Effects 0.000 description 19
- 239000010410 layer Substances 0.000 description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 239000000126 substance Substances 0.000 description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 14
- 238000001465 metallisation Methods 0.000 description 11
- 238000001878 scanning electron micrograph Methods 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 229910001092 metal group alloy Inorganic materials 0.000 description 9
- 239000002923 metal particle Substances 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 8
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 7
- 229910002091 carbon monoxide Inorganic materials 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 239000011295 pitch Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000003917 TEM image Methods 0.000 description 6
- 238000006555 catalytic reaction Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000024 high-resolution transmission electron micrograph Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical group 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000002203 pretreatment Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000002459 sustained effect Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000012512 characterization method Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 2
- 108091028043 Nucleic acid sequence Proteins 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910000905 alloy phase Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002255 enzymatic effect Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine group Chemical group NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000002122 magnetic nanoparticle Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000002277 temperature effect Effects 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 2
- 229940094989 trimethylsilane Drugs 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- KVGZZAHHUNAVKZ-UHFFFAOYSA-N 1,4-Dioxin Chemical group O1C=COC=C1 KVGZZAHHUNAVKZ-UHFFFAOYSA-N 0.000 description 1
- FBSNEJXXSJHKHX-UHFFFAOYSA-N CC1=C(C(C=C1)([Pt]C)C)C Chemical compound CC1=C(C(C=C1)([Pt]C)C)C FBSNEJXXSJHKHX-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241000282326 Felis catus Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910006253 ZrOy Inorganic materials 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- RQKPFSQDBAZFJV-UHFFFAOYSA-N cyclopenta-1,3-diene;nickel(2+) Chemical compound [Ni+2].C1C=CC=[C-]1.C1C=CC=[C-]1 RQKPFSQDBAZFJV-UHFFFAOYSA-N 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012377 drug delivery Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000013101 initial test Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 238000004375 physisorption Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000003945 visual behavior Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/48—Silver or gold
- B01J23/52—Gold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/341—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation
- B01J37/347—Ionic or cathodic spraying; Electric discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/32—Hydrogen storage
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24628—Nonplanar uniform thickness material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
- Y10T428/249928—Fiber embedded in a ceramic, glass, or carbon matrix
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Catalysts (AREA)
- Physical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Hydrogen, Water And Hydrids (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69368305P | 2005-06-24 | 2005-06-24 | |
| US74473306P | 2006-04-12 | 2006-04-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG174018A1 true SG174018A1 (en) | 2011-09-29 |
Family
ID=37595853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011054707A SG174018A1 (en) | 2005-06-24 | 2006-06-23 | Method for manufacture and coating ofnanostructured components |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20100215915A1 (enExample) |
| EP (1) | EP1917101A4 (enExample) |
| JP (1) | JP5456309B2 (enExample) |
| KR (1) | KR101015036B1 (enExample) |
| CN (2) | CN102353696B (enExample) |
| CA (1) | CA2613004C (enExample) |
| IL (1) | IL188363A0 (enExample) |
| SG (1) | SG174018A1 (enExample) |
| WO (1) | WO2007002369A2 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1917101A4 (en) * | 2005-06-24 | 2012-02-08 | Univ Washington State Res Fdn | METHOD FOR PRODUCING AND COATING NANOSTRUCTURED COMPONENTS |
| US7771512B2 (en) | 2005-06-24 | 2010-08-10 | Washington State University Research Foundation | Apparatus with high surface area nanostructures for hydrogen storage, and methods of storing hydrogen |
| KR100802182B1 (ko) * | 2006-09-27 | 2008-02-12 | 한국전자통신연구원 | 나노선 필터, 그 제조방법 및 흡착물 제거방법, 이를구비한 필터링 장치 |
| WO2009062096A1 (en) * | 2007-11-09 | 2009-05-14 | Washington State University Research Foundation | Catalysts and related methods |
| US20110043037A1 (en) * | 2008-01-22 | 2011-02-24 | Mcilroy David N | Nanostructured high surface area electrodes for energy storage devices |
| US20110076841A1 (en) * | 2009-09-30 | 2011-03-31 | Kahen Keith B | Forming catalyzed ii-vi semiconductor nanowires |
| WO2011050345A1 (en) | 2009-10-23 | 2011-04-28 | Gonano Technologies, Inc. | Catalyst materials for reforming carbon dioxide and related devices, systems, and methods |
| WO2011100638A1 (en) | 2010-02-11 | 2011-08-18 | Gonano Technologies, Inc. | Nanostructured high surface area supports for biomolecule, chemical, drug, and cell attachment applications and methods of making the same |
| CN102011192B (zh) * | 2010-09-21 | 2013-01-02 | 南京航空航天大学 | 载有功能基团的GaN纳米线阵列及其制法和用途 |
| US8728464B2 (en) | 2010-12-02 | 2014-05-20 | University Of Idaho | Method for stimulating osteogenesis |
| CN102750333B (zh) * | 2012-05-31 | 2014-05-07 | 华中科技大学 | 一种用于提取半导体纳米结构特征尺寸的方法 |
| KR101749505B1 (ko) | 2013-02-15 | 2017-06-21 | 삼성에스디아이 주식회사 | 음극 활물질 및 이를 채용한 음극과 리튬 전지 |
| US9633842B2 (en) | 2013-03-13 | 2017-04-25 | Okinawa Institute Of Science And Technology School Corporation | Metal induced nanocrystallization of amorphous semiconductor quantum dots |
| AP2017009797A0 (en) * | 2014-08-08 | 2017-03-31 | Olanrewaju W Tanimola | Methods for synthesis of graphene derivatives and functional materials from asphaltenes, graphene derivatives, 2d materials and applications of use |
| JP6367652B2 (ja) * | 2014-08-27 | 2018-08-01 | 国立研究開発法人物質・材料研究機構 | シリコン（Ｓｉ）系ナノ構造材料及びその製造方法 |
| EP3261982A1 (en) * | 2015-02-23 | 2018-01-03 | Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. | Self-processing synthesis of hybrid nanostructures |
| CN108122999B (zh) * | 2016-11-29 | 2019-10-22 | 中国科学院金属研究所 | 基于Pt纳米颗粒修饰GaN纳米线的紫外光电探测器及其制造方法 |
| CN108906078B (zh) * | 2018-07-20 | 2021-05-11 | 上海理工大学 | 一种高效Pd/Co3O4块体催化剂的制备方法 |
| JP7125229B2 (ja) * | 2018-09-20 | 2022-08-24 | トヨタ自動車株式会社 | クラスター担持触媒及びその製造方法 |
| CN109444251B (zh) * | 2018-11-23 | 2021-12-21 | 亿纳谱（浙江）生物科技有限公司 | 纳米基质在核酸检测中的应用 |
| CN109590028A (zh) * | 2018-11-28 | 2019-04-09 | 浙江工商大学 | 一种利用超声雾化等离子体反应制备纳米级催化剂的方法 |
| CN112707384A (zh) * | 2020-12-17 | 2021-04-27 | 中国科学技术大学 | 一种改性碳纳米管、其制备方法及应用 |
| CN114769089A (zh) * | 2022-04-25 | 2022-07-22 | 四川大学 | 一种采用pecvd涂层敷形保护的方法 |
| CN116593537B (zh) * | 2023-03-23 | 2026-04-21 | 宁波工程学院 | 一种ZnO/SiC纳米异质结高温乙醇气敏传感器及其制备方法 |
| CN117658143B (zh) * | 2023-12-01 | 2026-04-07 | 齐齐哈尔翔科新材料有限公司 | 一种SiC纳米弹簧的制备方法 |
| CN119680611B (zh) * | 2024-12-31 | 2025-09-26 | 中国地质大学（武汉） | 一种高产氢活性的g-C3N4/Ag@NiBx光催化材料及其制备方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4073750A (en) * | 1976-05-20 | 1978-02-14 | Exxon Research & Engineering Co. | Method for preparing a highly dispersed supported nickel catalyst |
| GB8609249D0 (en) * | 1986-04-16 | 1986-05-21 | Alcan Int Ltd | Anodic oxide membrane catalyst support |
| US5879827A (en) * | 1997-10-10 | 1999-03-09 | Minnesota Mining And Manufacturing Company | Catalyst for membrane electrode assembly and method of making |
| US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
| US6297063B1 (en) * | 1999-10-25 | 2001-10-02 | Agere Systems Guardian Corp. | In-situ nano-interconnected circuit devices and method for making the same |
| EP1129990A1 (en) * | 2000-02-25 | 2001-09-05 | Lucent Technologies Inc. | Process for controlled growth of carbon nanotubes |
| WO2002079514A1 (en) * | 2001-01-10 | 2002-10-10 | The Trustees Of Boston College | Dna-bridged carbon nanotube arrays |
| JP4705251B2 (ja) * | 2001-01-26 | 2011-06-22 | 本田技研工業株式会社 | Ｍｈタンク |
| US6672077B1 (en) * | 2001-12-11 | 2004-01-06 | Nanomix, Inc. | Hydrogen storage in nanostructure with physisorption |
| US20070092437A1 (en) * | 2001-12-11 | 2007-04-26 | Young-Kyun Kwon | Increasing hydrogen adsorption of nanostructured storage materials by modifying sp2 covalent bonds |
| EP1465836A2 (en) * | 2001-12-21 | 2004-10-13 | Battelle Memorial Institute | Structures containing carbon nanotubes and a porous support, methods of making the same, and related uses |
| US7169489B2 (en) * | 2002-03-15 | 2007-01-30 | Fuelsell Technologies, Inc. | Hydrogen storage, distribution, and recovery system |
| US6709497B2 (en) * | 2002-05-09 | 2004-03-23 | Texaco Ovonic Hydrogen Systems Llc | Honeycomb hydrogen storage structure |
| JP3821223B2 (ja) * | 2002-05-24 | 2006-09-13 | 独立行政法人科学技術振興機構 | 金属酸化物ナノチューブ及びその製法 |
| US6991773B2 (en) * | 2002-08-19 | 2006-01-31 | Nanomix, Inc. | Boron-oxide and related compounds for hydrogen storage |
| US6858521B2 (en) * | 2002-12-31 | 2005-02-22 | Samsung Electronics Co., Ltd. | Method for fabricating spaced-apart nanostructures |
| US7294417B2 (en) * | 2002-09-12 | 2007-11-13 | The Trustees Of Boston College | Metal oxide nanostructures with hierarchical morphology |
| US7051945B2 (en) * | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
| US7163659B2 (en) * | 2002-12-03 | 2007-01-16 | Hewlett-Packard Development Company, L.P. | Free-standing nanowire sensor and method for detecting an analyte in a fluid |
| US20040265212A1 (en) * | 2002-12-06 | 2004-12-30 | Vijay Varadan | Synthesis of coiled carbon nanotubes by microwave chemical vapor deposition |
| AU2003302247A1 (en) * | 2002-12-12 | 2004-07-09 | Mykrolis Corporation | Porous sintered composite materials |
| US7323043B2 (en) * | 2003-07-28 | 2008-01-29 | Deere & Company | Storage container associated with a thermal energy management system |
| JP2007504086A (ja) * | 2003-09-03 | 2007-03-01 | 本田技研工業株式会社 | 一次元炭素ナノ構造体の製造方法 |
| US8541054B2 (en) * | 2003-09-08 | 2013-09-24 | Honda Motor Co., Ltd | Methods for preparation of one-dimensional carbon nanostructures |
| JP4167607B2 (ja) * | 2004-02-27 | 2008-10-15 | 株式会社豊田自動織機 | 水素貯蔵タンク |
| US7425232B2 (en) * | 2004-04-05 | 2008-09-16 | Naturalnano Research, Inc. | Hydrogen storage apparatus comprised of halloysite |
| FR2885898B1 (fr) * | 2005-05-17 | 2007-07-06 | Commissariat Energie Atomique | Composant microfluidique comprenant au moins un canal rempli de nanotubes et procede de fabrication d'un tel composant microfluidique. |
| US7771512B2 (en) * | 2005-06-24 | 2010-08-10 | Washington State University Research Foundation | Apparatus with high surface area nanostructures for hydrogen storage, and methods of storing hydrogen |
| EP1917101A4 (en) * | 2005-06-24 | 2012-02-08 | Univ Washington State Res Fdn | METHOD FOR PRODUCING AND COATING NANOSTRUCTURED COMPONENTS |
| WO2009062096A1 (en) * | 2007-11-09 | 2009-05-14 | Washington State University Research Foundation | Catalysts and related methods |
-
2006
- 2006-06-23 EP EP06785406A patent/EP1917101A4/en not_active Withdrawn
- 2006-06-23 US US11/993,452 patent/US20100215915A1/en not_active Abandoned
- 2006-06-23 JP JP2008518419A patent/JP5456309B2/ja not_active Expired - Fee Related
- 2006-06-23 KR KR1020087001985A patent/KR101015036B1/ko not_active Expired - Fee Related
- 2006-06-23 SG SG2011054707A patent/SG174018A1/en unknown
- 2006-06-23 CN CN201110201643.9A patent/CN102353696B/zh not_active Expired - Fee Related
- 2006-06-23 CA CA 2613004 patent/CA2613004C/en not_active Expired - Fee Related
- 2006-06-23 WO PCT/US2006/024435 patent/WO2007002369A2/en not_active Ceased
- 2006-06-23 CN CN2006800228172A patent/CN101232941B/zh not_active Expired - Fee Related
-
2007
- 2007-12-24 IL IL188363A patent/IL188363A0/en unknown
-
2013
- 2013-10-23 US US14/061,577 patent/US20140093656A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CA2613004A1 (en) | 2007-01-04 |
| CN101232941B (zh) | 2011-08-31 |
| IL188363A0 (en) | 2008-04-13 |
| JP5456309B2 (ja) | 2014-03-26 |
| CA2613004C (en) | 2012-03-06 |
| WO2007002369A3 (en) | 2007-05-24 |
| KR101015036B1 (ko) | 2011-02-16 |
| US20100215915A1 (en) | 2010-08-26 |
| EP1917101A4 (en) | 2012-02-08 |
| EP1917101A2 (en) | 2008-05-07 |
| JP2009501068A (ja) | 2009-01-15 |
| WO2007002369B1 (en) | 2007-07-26 |
| US20140093656A1 (en) | 2014-04-03 |
| KR20080035581A (ko) | 2008-04-23 |
| WO2007002369A2 (en) | 2007-01-04 |
| CN102353696B (zh) | 2014-04-23 |
| CN101232941A (zh) | 2008-07-30 |
| CN102353696A (zh) | 2012-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2613004C (en) | Method for manufacture and coating of nanostructured components | |
| US8404212B2 (en) | Apparatus with high surface area nanostructures for hydrogen storage, and methods of storing hydrogen | |
| US20030042147A1 (en) | Method of forming a nano-supported catalyst on a substrate for nanotube growth | |
| Somorjai | New model catalysts (platinum nanoparticles) and new techniques (SFG and STM) for studies of reaction intermediates and surface restructuring at high pressures during catalytic reactions | |
| CN101970104B (zh) | 催化剂和相关方法 | |
| Park et al. | Catalyst support effects: gas-phase hydrogenation of phenol over palladium | |
| US7740814B2 (en) | Composite materials and method of its manufacture | |
| Rakov | Materials made of carbon nanotubes. The carbon nanotube forest | |
| Hierso et al. | Platinum and palladium films obtained by low-temperature MOCVD for the formation of small particles on divided supports as catalytic materials | |
| CN105032385A (zh) | 一种金属氧化物/铂纳米颗粒复合催化剂的制备方法 | |
| WO2008029927A1 (en) | Method for production of carbon nanotube | |
| Flaherty et al. | Growth and characterization of high surface area titanium carbide | |
| KR20160057393A (ko) | 탄소 나노구조체의 제조 방법 및 카본 나노튜브 | |
| US8236272B2 (en) | Combination catalysts based on iron for the substantial synthesis of multi-walled carbon nanotubes by chemical vapor deposition | |
| US20060067872A1 (en) | Method of preparing catalyst base for manufacturing carbon nanotubes and method of manufacturing carbon nanotubes employing the same | |
| Ramachandran et al. | Atomic layer deposition for catalysis | |
| CN1448335A (zh) | 适用于低温热化学气相沉积合成纳米碳管的负载金属触媒及使用此触媒的纳米碳管合成方法 | |
| KR100845653B1 (ko) | 카본 나노튜브 디바이스 및 그 제조방법 | |
| Kämpken et al. | Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst | |
| Kordás et al. | Room temperature chemical deposition of palladium nanoparticles in anodic aluminium oxide templates | |
| Tyczkowski et al. | Cold plasma in the nanotechnology of catalysts | |
| Aoqui et al. | Dependence of catalytic nano dots prepared Si substrate in carbon-nano tubes growth | |
| Lalonde | Growth and characterization of metal nanoparticles on nanowire substrates | |
| Rao | Noble Metal Nanoparticles for Surface/Gas-phase Reactions | |
| TW200936498A (en) | Improvements in carbon nanotube growth |