SG174018A1 - Method for manufacture and coating ofnanostructured components - Google Patents
Method for manufacture and coating ofnanostructured components Download PDFInfo
- Publication number
- SG174018A1 SG174018A1 SG2011054707A SG2011054707A SG174018A1 SG 174018 A1 SG174018 A1 SG 174018A1 SG 2011054707 A SG2011054707 A SG 2011054707A SG 2011054707 A SG2011054707 A SG 2011054707A SG 174018 A1 SG174018 A1 SG 174018A1
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- SG
- Singapore
- Prior art keywords
- nanosprings
- substrate
- mat
- nanostructure
- nanowires
- Prior art date
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- 238000000576 coating method Methods 0.000 title claims description 13
- 239000011248 coating agent Substances 0.000 title claims description 12
- 238000000034 method Methods 0.000 title abstract description 66
- 238000004519 manufacturing process Methods 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 15
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 6
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 54
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- 239000002184 metal Substances 0.000 claims description 20
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- 230000008859 change Effects 0.000 claims description 6
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- 239000000956 alloy Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052723 transition metal Inorganic materials 0.000 claims 2
- 150000003624 transition metals Chemical class 0.000 claims 2
- 239000002086 nanomaterial Substances 0.000 abstract description 84
- 239000003054 catalyst Substances 0.000 abstract description 65
- 239000002070 nanowire Substances 0.000 abstract description 63
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 47
- 239000002243 precursor Substances 0.000 abstract description 26
- 230000003197 catalytic effect Effects 0.000 abstract description 24
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- 238000009835 boiling Methods 0.000 abstract description 3
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- 238000000151 deposition Methods 0.000 description 20
- 230000008021 deposition Effects 0.000 description 19
- 239000010410 layer Substances 0.000 description 17
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- 239000000126 substance Substances 0.000 description 15
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- 238000001465 metallisation Methods 0.000 description 11
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- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 7
- 229910002091 carbon monoxide Inorganic materials 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
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- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 2
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- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/48—Silver or gold
- B01J23/52—Gold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/341—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation
- B01J37/347—Ionic or cathodic spraying; Electric discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/32—Hydrogen storage
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24628—Nonplanar uniform thickness material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Catalysts (AREA)
- Physical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Hydrogen, Water And Hydrids (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
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| KR101015036B1 (ko) * | 2005-06-24 | 2011-02-16 | 아이다호 리서치 파운데이션, 아이엔씨. | 나노구조화된 부재의 제조방법 및 피복방법 |
| US7771512B2 (en) | 2005-06-24 | 2010-08-10 | Washington State University Research Foundation | Apparatus with high surface area nanostructures for hydrogen storage, and methods of storing hydrogen |
| KR100802182B1 (ko) * | 2006-09-27 | 2008-02-12 | 한국전자통신연구원 | 나노선 필터, 그 제조방법 및 흡착물 제거방법, 이를구비한 필터링 장치 |
| CN101970104B (zh) * | 2007-11-09 | 2013-11-06 | 华盛顿州立大学研究基金会 | 催化剂和相关方法 |
| US20110043037A1 (en) * | 2008-01-22 | 2011-02-24 | Mcilroy David N | Nanostructured high surface area electrodes for energy storage devices |
| US20110076841A1 (en) * | 2009-09-30 | 2011-03-31 | Kahen Keith B | Forming catalyzed ii-vi semiconductor nanowires |
| WO2011050345A1 (en) | 2009-10-23 | 2011-04-28 | Gonano Technologies, Inc. | Catalyst materials for reforming carbon dioxide and related devices, systems, and methods |
| WO2011100638A1 (en) | 2010-02-11 | 2011-08-18 | Gonano Technologies, Inc. | Nanostructured high surface area supports for biomolecule, chemical, drug, and cell attachment applications and methods of making the same |
| CN102011192B (zh) * | 2010-09-21 | 2013-01-02 | 南京航空航天大学 | 载有功能基团的GaN纳米线阵列及其制法和用途 |
| US8728464B2 (en) | 2010-12-02 | 2014-05-20 | University Of Idaho | Method for stimulating osteogenesis |
| CN102750333B (zh) * | 2012-05-31 | 2014-05-07 | 华中科技大学 | 一种用于提取半导体纳米结构特征尺寸的方法 |
| KR101749505B1 (ko) | 2013-02-15 | 2017-06-21 | 삼성에스디아이 주식회사 | 음극 활물질 및 이를 채용한 음극과 리튬 전지 |
| EP2973660B1 (en) | 2013-03-13 | 2017-11-01 | Okinawa Institute of Science and Technology School Corporation | Metal induced nanocrystallization of amorphous semiconductor quantum dots |
| CA2960807A1 (en) * | 2014-08-08 | 2016-02-11 | Olanrewaju W. Tanimola | Methods for synthesis of graphene derivatives and functional materials from asphaltenes, graphene derivatives, 2d materials and applications of use |
| JP6367652B2 (ja) * | 2014-08-27 | 2018-08-01 | 国立研究開発法人物質・材料研究機構 | シリコン（Ｓｉ）系ナノ構造材料及びその製造方法 |
| WO2016135713A1 (en) * | 2015-02-23 | 2016-09-01 | Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd | Self-processing synthesis of hybrid nanostructures |
| CN108122999B (zh) * | 2016-11-29 | 2019-10-22 | 中国科学院金属研究所 | 基于Pt纳米颗粒修饰GaN纳米线的紫外光电探测器及其制造方法 |
| CN108906078B (zh) * | 2018-07-20 | 2021-05-11 | 上海理工大学 | 一种高效Pd/Co3O4块体催化剂的制备方法 |
| JP7125229B2 (ja) * | 2018-09-20 | 2022-08-24 | トヨタ自動車株式会社 | クラスター担持触媒及びその製造方法 |
| CN109444251B (zh) * | 2018-11-23 | 2021-12-21 | 亿纳谱（浙江）生物科技有限公司 | 纳米基质在核酸检测中的应用 |
| CN109590028A (zh) * | 2018-11-28 | 2019-04-09 | 浙江工商大学 | 一种利用超声雾化等离子体反应制备纳米级催化剂的方法 |
| CN112707384A (zh) * | 2020-12-17 | 2021-04-27 | 中国科学技术大学 | 一种改性碳纳米管、其制备方法及应用 |
| CN114769089A (zh) * | 2022-04-25 | 2022-07-22 | 四川大学 | 一种采用pecvd涂层敷形保护的方法 |
| CN117658143A (zh) * | 2023-12-01 | 2024-03-08 | 齐齐哈尔翔科新材料有限公司 | 一种SiC纳米弹簧的制备方法 |
| CN119680611B (zh) * | 2024-12-31 | 2025-09-26 | 中国地质大学（武汉） | 一种高产氢活性的g-C3N4/Ag@NiBx光催化材料及其制备方法 |
Family Cites Families (30)
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|---|---|---|---|---|
| US4073750A (en) * | 1976-05-20 | 1978-02-14 | Exxon Research & Engineering Co. | Method for preparing a highly dispersed supported nickel catalyst |
| GB8609249D0 (en) * | 1986-04-16 | 1986-05-21 | Alcan Int Ltd | Anodic oxide membrane catalyst support |
| US5879827A (en) * | 1997-10-10 | 1999-03-09 | Minnesota Mining And Manufacturing Company | Catalyst for membrane electrode assembly and method of making |
| US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
| US6297063B1 (en) * | 1999-10-25 | 2001-10-02 | Agere Systems Guardian Corp. | In-situ nano-interconnected circuit devices and method for making the same |
| EP1129990A1 (en) * | 2000-02-25 | 2001-09-05 | Lucent Technologies Inc. | Process for controlled growth of carbon nanotubes |
| US6958216B2 (en) * | 2001-01-10 | 2005-10-25 | The Trustees Of Boston College | DNA-bridged carbon nanotube arrays |
| JP4705251B2 (ja) * | 2001-01-26 | 2011-06-22 | 本田技研工業株式会社 | Ｍｈタンク |
| US20070092437A1 (en) * | 2001-12-11 | 2007-04-26 | Young-Kyun Kwon | Increasing hydrogen adsorption of nanostructured storage materials by modifying sp2 covalent bonds |
| US6672077B1 (en) * | 2001-12-11 | 2004-01-06 | Nanomix, Inc. | Hydrogen storage in nanostructure with physisorption |
| WO2003059813A2 (en) * | 2001-12-21 | 2003-07-24 | Battelle Memorial Institute | Structures containing carbon nanotubes and a porous support, methods of making the same, and related uses |
| US7169489B2 (en) * | 2002-03-15 | 2007-01-30 | Fuelsell Technologies, Inc. | Hydrogen storage, distribution, and recovery system |
| US6709497B2 (en) * | 2002-05-09 | 2004-03-23 | Texaco Ovonic Hydrogen Systems Llc | Honeycomb hydrogen storage structure |
| JP3821223B2 (ja) * | 2002-05-24 | 2006-09-13 | 独立行政法人科学技術振興機構 | 金属酸化物ナノチューブ及びその製法 |
| US6991773B2 (en) * | 2002-08-19 | 2006-01-31 | Nanomix, Inc. | Boron-oxide and related compounds for hydrogen storage |
| US6858521B2 (en) * | 2002-12-31 | 2005-02-22 | Samsung Electronics Co., Ltd. | Method for fabricating spaced-apart nanostructures |
| WO2004050547A2 (en) * | 2002-09-12 | 2004-06-17 | The Trustees Of Boston College | Metal oxide nanostructures with hierarchical morphology |
| US7051945B2 (en) * | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
| US7163659B2 (en) * | 2002-12-03 | 2007-01-16 | Hewlett-Packard Development Company, L.P. | Free-standing nanowire sensor and method for detecting an analyte in a fluid |
| AU2003300816A1 (en) * | 2002-12-06 | 2004-06-30 | The Penn State Research Foundation | Synthesis of coiled carbon nanotubes by microwave chemical vapor deposition |
| AU2003302247A1 (en) * | 2002-12-12 | 2004-07-09 | Mykrolis Corporation | Porous sintered composite materials |
| US7323043B2 (en) * | 2003-07-28 | 2008-01-29 | Deere & Company | Storage container associated with a thermal energy management system |
| US8541054B2 (en) * | 2003-09-08 | 2013-09-24 | Honda Motor Co., Ltd | Methods for preparation of one-dimensional carbon nanostructures |
| WO2005033001A2 (en) * | 2003-09-03 | 2005-04-14 | Honda Motor Co., Ltd. | Methods for preparation of one-dimensional carbon nanostructures |
| JP4167607B2 (ja) * | 2004-02-27 | 2008-10-15 | 株式会社豊田自動織機 | 水素貯蔵タンク |
| US7425232B2 (en) * | 2004-04-05 | 2008-09-16 | Naturalnano Research, Inc. | Hydrogen storage apparatus comprised of halloysite |
| FR2885898B1 (fr) * | 2005-05-17 | 2007-07-06 | Commissariat Energie Atomique | Composant microfluidique comprenant au moins un canal rempli de nanotubes et procede de fabrication d'un tel composant microfluidique. |
| US7771512B2 (en) * | 2005-06-24 | 2010-08-10 | Washington State University Research Foundation | Apparatus with high surface area nanostructures for hydrogen storage, and methods of storing hydrogen |
| KR101015036B1 (ko) * | 2005-06-24 | 2011-02-16 | 아이다호 리서치 파운데이션, 아이엔씨. | 나노구조화된 부재의 제조방법 및 피복방법 |
| CN101970104B (zh) * | 2007-11-09 | 2013-11-06 | 华盛顿州立大学研究基金会 | 催化剂和相关方法 |
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| US20100215915A1 (en) | 2010-08-26 |
| EP1917101A2 (en) | 2008-05-07 |
| CA2613004C (en) | 2012-03-06 |
| WO2007002369A2 (en) | 2007-01-04 |
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