CN102353696B - 用于纳米结构的组分的制备和涂覆的方法 - Google Patents

用于纳米结构的组分的制备和涂覆的方法 Download PDF

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CN102353696B
CN102353696B CN201110201643.9A CN201110201643A CN102353696B CN 102353696 B CN102353696 B CN 102353696B CN 201110201643 A CN201110201643 A CN 201110201643A CN 102353696 B CN102353696 B CN 102353696B
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nanostructured
felt
nanometer
nano particle
nanometer spring
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CN102353696A (zh
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格兰特·诺顿
戴维·麦基尔罗伊
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Idaho Research Foundation Inc
Washington State University Research Foundation
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    • B01J37/34Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
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CN201110201643.9A 2005-06-24 2006-06-23 用于纳米结构的组分的制备和涂覆的方法 Expired - Fee Related CN102353696B (zh)

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US69368305P 2005-06-24 2005-06-24
US60/693,683 2005-06-24
US74473306P 2006-04-12 2006-04-12
US60/744,733 2006-04-12

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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101015036B1 (ko) * 2005-06-24 2011-02-16 아이다호 리서치 파운데이션, 아이엔씨. 나노구조화된 부재의 제조방법 및 피복방법
US7771512B2 (en) 2005-06-24 2010-08-10 Washington State University Research Foundation Apparatus with high surface area nanostructures for hydrogen storage, and methods of storing hydrogen
KR100802182B1 (ko) * 2006-09-27 2008-02-12 한국전자통신연구원 나노선 필터, 그 제조방법 및 흡착물 제거방법, 이를구비한 필터링 장치
CN101970104B (zh) * 2007-11-09 2013-11-06 华盛顿州立大学研究基金会 催化剂和相关方法
US20110043037A1 (en) * 2008-01-22 2011-02-24 Mcilroy David N Nanostructured high surface area electrodes for energy storage devices
US20110076841A1 (en) * 2009-09-30 2011-03-31 Kahen Keith B Forming catalyzed ii-vi semiconductor nanowires
WO2011050345A1 (en) 2009-10-23 2011-04-28 Gonano Technologies, Inc. Catalyst materials for reforming carbon dioxide and related devices, systems, and methods
WO2011100638A1 (en) 2010-02-11 2011-08-18 Gonano Technologies, Inc. Nanostructured high surface area supports for biomolecule, chemical, drug, and cell attachment applications and methods of making the same
CN102011192B (zh) * 2010-09-21 2013-01-02 南京航空航天大学 载有功能基团的GaN纳米线阵列及其制法和用途
US8728464B2 (en) 2010-12-02 2014-05-20 University Of Idaho Method for stimulating osteogenesis
CN102750333B (zh) * 2012-05-31 2014-05-07 华中科技大学 一种用于提取半导体纳米结构特征尺寸的方法
KR101749505B1 (ko) 2013-02-15 2017-06-21 삼성에스디아이 주식회사 음극 활물질 및 이를 채용한 음극과 리튬 전지
EP2973660B1 (en) 2013-03-13 2017-11-01 Okinawa Institute of Science and Technology School Corporation Metal induced nanocrystallization of amorphous semiconductor quantum dots
CA2960807A1 (en) * 2014-08-08 2016-02-11 Olanrewaju W. Tanimola Methods for synthesis of graphene derivatives and functional materials from asphaltenes, graphene derivatives, 2d materials and applications of use
JP6367652B2 (ja) * 2014-08-27 2018-08-01 国立研究開発法人物質・材料研究機構 シリコン(Si)系ナノ構造材料及びその製造方法
WO2016135713A1 (en) * 2015-02-23 2016-09-01 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd Self-processing synthesis of hybrid nanostructures
CN108122999B (zh) * 2016-11-29 2019-10-22 中国科学院金属研究所 基于Pt纳米颗粒修饰GaN纳米线的紫外光电探测器及其制造方法
CN108906078B (zh) * 2018-07-20 2021-05-11 上海理工大学 一种高效Pd/Co3O4块体催化剂的制备方法
JP7125229B2 (ja) * 2018-09-20 2022-08-24 トヨタ自動車株式会社 クラスター担持触媒及びその製造方法
CN109444251B (zh) * 2018-11-23 2021-12-21 亿纳谱(浙江)生物科技有限公司 纳米基质在核酸检测中的应用
CN109590028A (zh) * 2018-11-28 2019-04-09 浙江工商大学 一种利用超声雾化等离子体反应制备纳米级催化剂的方法
CN112707384A (zh) * 2020-12-17 2021-04-27 中国科学技术大学 一种改性碳纳米管、其制备方法及应用
CN114769089A (zh) * 2022-04-25 2022-07-22 四川大学 一种采用pecvd涂层敷形保护的方法
CN117658143A (zh) * 2023-12-01 2024-03-08 齐齐哈尔翔科新材料有限公司 一种SiC纳米弹簧的制备方法
CN119680611B (zh) * 2024-12-31 2025-09-26 中国地质大学(武汉) 一种高产氢活性的g-C3N4/Ag@NiBx光催化材料及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1426756A1 (en) * 2002-12-03 2004-06-09 Hewlett-Packard Development Company, L.P. Free-standing nanowire sensor and method for detecting an analyte in a fluid

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4073750A (en) * 1976-05-20 1978-02-14 Exxon Research & Engineering Co. Method for preparing a highly dispersed supported nickel catalyst
GB8609249D0 (en) * 1986-04-16 1986-05-21 Alcan Int Ltd Anodic oxide membrane catalyst support
US5879827A (en) * 1997-10-10 1999-03-09 Minnesota Mining And Manufacturing Company Catalyst for membrane electrode assembly and method of making
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US6297063B1 (en) * 1999-10-25 2001-10-02 Agere Systems Guardian Corp. In-situ nano-interconnected circuit devices and method for making the same
EP1129990A1 (en) * 2000-02-25 2001-09-05 Lucent Technologies Inc. Process for controlled growth of carbon nanotubes
US6958216B2 (en) * 2001-01-10 2005-10-25 The Trustees Of Boston College DNA-bridged carbon nanotube arrays
JP4705251B2 (ja) * 2001-01-26 2011-06-22 本田技研工業株式会社 Mhタンク
US20070092437A1 (en) * 2001-12-11 2007-04-26 Young-Kyun Kwon Increasing hydrogen adsorption of nanostructured storage materials by modifying sp2 covalent bonds
US6672077B1 (en) * 2001-12-11 2004-01-06 Nanomix, Inc. Hydrogen storage in nanostructure with physisorption
WO2003059813A2 (en) * 2001-12-21 2003-07-24 Battelle Memorial Institute Structures containing carbon nanotubes and a porous support, methods of making the same, and related uses
US7169489B2 (en) * 2002-03-15 2007-01-30 Fuelsell Technologies, Inc. Hydrogen storage, distribution, and recovery system
US6709497B2 (en) * 2002-05-09 2004-03-23 Texaco Ovonic Hydrogen Systems Llc Honeycomb hydrogen storage structure
JP3821223B2 (ja) * 2002-05-24 2006-09-13 独立行政法人科学技術振興機構 金属酸化物ナノチューブ及びその製法
US6991773B2 (en) * 2002-08-19 2006-01-31 Nanomix, Inc. Boron-oxide and related compounds for hydrogen storage
US6858521B2 (en) * 2002-12-31 2005-02-22 Samsung Electronics Co., Ltd. Method for fabricating spaced-apart nanostructures
WO2004050547A2 (en) * 2002-09-12 2004-06-17 The Trustees Of Boston College Metal oxide nanostructures with hierarchical morphology
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
AU2003300816A1 (en) * 2002-12-06 2004-06-30 The Penn State Research Foundation Synthesis of coiled carbon nanotubes by microwave chemical vapor deposition
AU2003302247A1 (en) * 2002-12-12 2004-07-09 Mykrolis Corporation Porous sintered composite materials
US7323043B2 (en) * 2003-07-28 2008-01-29 Deere & Company Storage container associated with a thermal energy management system
US8541054B2 (en) * 2003-09-08 2013-09-24 Honda Motor Co., Ltd Methods for preparation of one-dimensional carbon nanostructures
WO2005033001A2 (en) * 2003-09-03 2005-04-14 Honda Motor Co., Ltd. Methods for preparation of one-dimensional carbon nanostructures
JP4167607B2 (ja) * 2004-02-27 2008-10-15 株式会社豊田自動織機 水素貯蔵タンク
US7425232B2 (en) * 2004-04-05 2008-09-16 Naturalnano Research, Inc. Hydrogen storage apparatus comprised of halloysite
FR2885898B1 (fr) * 2005-05-17 2007-07-06 Commissariat Energie Atomique Composant microfluidique comprenant au moins un canal rempli de nanotubes et procede de fabrication d'un tel composant microfluidique.
US7771512B2 (en) * 2005-06-24 2010-08-10 Washington State University Research Foundation Apparatus with high surface area nanostructures for hydrogen storage, and methods of storing hydrogen
KR101015036B1 (ko) * 2005-06-24 2011-02-16 아이다호 리서치 파운데이션, 아이엔씨. 나노구조화된 부재의 제조방법 및 피복방법
CN101970104B (zh) * 2007-11-09 2013-11-06 华盛顿州立大学研究基金会 催化剂和相关方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1426756A1 (en) * 2002-12-03 2004-06-09 Hewlett-Packard Development Company, L.P. Free-standing nanowire sensor and method for detecting an analyte in a fluid

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
D N McIlroy et. al..Nanospring formation—unexpected catalyst mediated growth.《Journal of Physics: Condensed Matter》.2004,第16卷(第12期),R415-R440,尤其是R422页2.1.3部分,R423页2.2部分,R428页第4部分.
Direct Ultrasensitive Electrical Detection of DNA and DNA Sequence Variations Using Nanowire Nanosensors;J. Hahm et. al.;《Nano Letters》;20031209;第4卷(第1期);51-54页,尤其是第52页左栏第2段、图2 *
J. Hahm et. al..Direct Ultrasensitive Electrical Detection of DNA and DNA Sequence Variations Using Nanowire Nanosensors.《Nano Letters》.2003,第4卷(第1期),51-54页,尤其是第52页左栏第2段、图2.
Nanospring formation—unexpected catalyst mediated growth;D N McIlroy et. al.;《Journal of Physics: Condensed Matter》;20040312;第16卷(第12期);R415-R440页,尤其是R422页2.1.3部分,R423页2.2部分,R428页第4部分 *
掺杂硅纳米线的研究进展;裴立宅等;《功能材料与器件学报》;20041231;第10卷(第04期);399-406页 *
硅纳米线制成的纳米传感器;陈扬文等;《传感器技术》;20041231;第23卷(第12期);1-3,9页 *
裴立宅等.掺杂硅纳米线的研究进展.《功能材料与器件学报》.2004,第10卷(第04期),399-406页.
陈扬文等.硅纳米线制成的纳米传感器.《传感器技术》.2004,第23卷(第12期),1-3,9页.

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