CN102353696B - 用于纳米结构的组分的制备和涂覆的方法 - Google Patents

用于纳米结构的组分的制备和涂覆的方法 Download PDF

Info

Publication number
CN102353696B
CN102353696B CN201110201643.9A CN201110201643A CN102353696B CN 102353696 B CN102353696 B CN 102353696B CN 201110201643 A CN201110201643 A CN 201110201643A CN 102353696 B CN102353696 B CN 102353696B
Authority
CN
China
Prior art keywords
nanoparticles
nanostructures
nanostructured
nanosprings
nanowires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110201643.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN102353696A (zh
Inventor
格兰特·诺顿
戴维·麦基尔罗伊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idaho Research Foundation Inc
Washington State University Research Foundation
Original Assignee
Idaho Research Foundation Inc
Washington State University Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idaho Research Foundation Inc, Washington State University Research Foundation filed Critical Idaho Research Foundation Inc
Publication of CN102353696A publication Critical patent/CN102353696A/zh
Application granted granted Critical
Publication of CN102353696B publication Critical patent/CN102353696B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
    • B01J23/48—Silver or gold
    • B01J23/52—Gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02—Impregnation, coating or precipitation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
    • B01J37/341—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation
    • B01J37/347—Ionic or cathodic spraying; Electric discharge
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/32—Hydrogen storage
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24628—Nonplanar uniform thickness material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
    • Y10T428/249928—Fiber embedded in a ceramic, glass, or carbon matrix

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Composite Materials (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Catalysts (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Hydrogen, Water And Hydrids (AREA)
  • Silicon Compounds (AREA)
CN201110201643.9A 2005-06-24 2006-06-23 用于纳米结构的组分的制备和涂覆的方法 Expired - Fee Related CN102353696B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US69368305P 2005-06-24 2005-06-24
US60/693,683 2005-06-24
US74473306P 2006-04-12 2006-04-12
US60/744,733 2006-04-12

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2006800228172A Division CN101232941B (zh) 2005-06-24 2006-06-23 用于纳米结构的组分的制备和涂覆的方法

Publications (2)

Publication Number Publication Date
CN102353696A CN102353696A (zh) 2012-02-15
CN102353696B true CN102353696B (zh) 2014-04-23

Family

ID=37595853

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201110201643.9A Expired - Fee Related CN102353696B (zh) 2005-06-24 2006-06-23 用于纳米结构的组分的制备和涂覆的方法
CN2006800228172A Expired - Fee Related CN101232941B (zh) 2005-06-24 2006-06-23 用于纳米结构的组分的制备和涂覆的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2006800228172A Expired - Fee Related CN101232941B (zh) 2005-06-24 2006-06-23 用于纳米结构的组分的制备和涂覆的方法

Country Status (9)

Country Link
US (2) US20100215915A1 (enExample)
EP (1) EP1917101A4 (enExample)
JP (1) JP5456309B2 (enExample)
KR (1) KR101015036B1 (enExample)
CN (2) CN102353696B (enExample)
CA (1) CA2613004C (enExample)
IL (1) IL188363A0 (enExample)
SG (1) SG174018A1 (enExample)
WO (1) WO2007002369A2 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1917101A4 (en) * 2005-06-24 2012-02-08 Univ Washington State Res Fdn METHOD FOR PRODUCING AND COATING NANOSTRUCTURED COMPONENTS
US7771512B2 (en) 2005-06-24 2010-08-10 Washington State University Research Foundation Apparatus with high surface area nanostructures for hydrogen storage, and methods of storing hydrogen
KR100802182B1 (ko) * 2006-09-27 2008-02-12 한국전자통신연구원 나노선 필터, 그 제조방법 및 흡착물 제거방법, 이를구비한 필터링 장치
CN101970104B (zh) * 2007-11-09 2013-11-06 华盛顿州立大学研究基金会 催化剂和相关方法
WO2009094479A1 (en) * 2008-01-22 2009-07-30 Gonano Technologies, Inc. Nanostructured high surface area electrodes for energy storage devices
US20110076841A1 (en) * 2009-09-30 2011-03-31 Kahen Keith B Forming catalyzed ii-vi semiconductor nanowires
WO2011050345A1 (en) 2009-10-23 2011-04-28 Gonano Technologies, Inc. Catalyst materials for reforming carbon dioxide and related devices, systems, and methods
WO2011100638A1 (en) 2010-02-11 2011-08-18 Gonano Technologies, Inc. Nanostructured high surface area supports for biomolecule, chemical, drug, and cell attachment applications and methods of making the same
CN102011192B (zh) * 2010-09-21 2013-01-02 南京航空航天大学 载有功能基团的GaN纳米线阵列及其制法和用途
US8728464B2 (en) 2010-12-02 2014-05-20 University Of Idaho Method for stimulating osteogenesis
CN102750333B (zh) * 2012-05-31 2014-05-07 华中科技大学 一种用于提取半导体纳米结构特征尺寸的方法
KR101749505B1 (ko) 2013-02-15 2017-06-21 삼성에스디아이 주식회사 음극 활물질 및 이를 채용한 음극과 리튬 전지
EP2973660B1 (en) * 2013-03-13 2017-11-01 Okinawa Institute of Science and Technology School Corporation Metal induced nanocrystallization of amorphous semiconductor quantum dots
SG10201901082VA (en) * 2014-08-08 2019-03-28 Olanrewaju Tanimola Methods for synthesis of graphene derivatives and functional materials from asphaltenes, graphene derivatives, 2d materials and applications of use
JP6367652B2 (ja) * 2014-08-27 2018-08-01 国立研究開発法人物質・材料研究機構 シリコン（Ｓｉ）系ナノ構造材料及びその製造方法
EP3261982A1 (en) * 2015-02-23 2018-01-03 Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. Self-processing synthesis of hybrid nanostructures
CN108122999B (zh) * 2016-11-29 2019-10-22 中国科学院金属研究所 基于Pt纳米颗粒修饰GaN纳米线的紫外光电探测器及其制造方法
CN108906078B (zh) * 2018-07-20 2021-05-11 上海理工大学 一种高效Pd/Co3O4块体催化剂的制备方法
JP7125229B2 (ja) * 2018-09-20 2022-08-24 トヨタ自動車株式会社 クラスター担持触媒及びその製造方法
CN109444251B (zh) * 2018-11-23 2021-12-21 亿纳谱（浙江）生物科技有限公司 纳米基质在核酸检测中的应用
CN109590028A (zh) * 2018-11-28 2019-04-09 浙江工商大学 一种利用超声雾化等离子体反应制备纳米级催化剂的方法
CN112707384A (zh) * 2020-12-17 2021-04-27 中国科学技术大学 一种改性碳纳米管、其制备方法及应用
CN114769089A (zh) * 2022-04-25 2022-07-22 四川大学 一种采用pecvd涂层敷形保护的方法
CN116593537B (zh) * 2023-03-23 2026-04-21 宁波工程学院 一种ZnO/SiC纳米异质结高温乙醇气敏传感器及其制备方法
CN117658143B (zh) * 2023-12-01 2026-04-07 齐齐哈尔翔科新材料有限公司 一种SiC纳米弹簧的制备方法
CN119680611B (zh) * 2024-12-31 2025-09-26 中国地质大学（武汉） 一种高产氢活性的g-C3N4/Ag@NiBx光催化材料及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1426756A1 (en) * 2002-12-03 2004-06-09 Hewlett-Packard Development Company, L.P. Free-standing nanowire sensor and method for detecting an analyte in a fluid

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4073750A (en) * 1976-05-20 1978-02-14 Exxon Research & Engineering Co. Method for preparing a highly dispersed supported nickel catalyst
GB8609249D0 (en) * 1986-04-16 1986-05-21 Alcan Int Ltd Anodic oxide membrane catalyst support
US5879827A (en) * 1997-10-10 1999-03-09 Minnesota Mining And Manufacturing Company Catalyst for membrane electrode assembly and method of making
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US6297063B1 (en) * 1999-10-25 2001-10-02 Agere Systems Guardian Corp. In-situ nano-interconnected circuit devices and method for making the same
EP1129990A1 (en) * 2000-02-25 2001-09-05 Lucent Technologies Inc. Process for controlled growth of carbon nanotubes
WO2002079514A1 (en) * 2001-01-10 2002-10-10 The Trustees Of Boston College Dna-bridged carbon nanotube arrays
JP4705251B2 (ja) * 2001-01-26 2011-06-22 本田技研工業株式会社 Ｍｈタンク
US20070092437A1 (en) * 2001-12-11 2007-04-26 Young-Kyun Kwon Increasing hydrogen adsorption of nanostructured storage materials by modifying sp2 covalent bonds
US6672077B1 (en) * 2001-12-11 2004-01-06 Nanomix, Inc. Hydrogen storage in nanostructure with physisorption
AU2002367020B2 (en) * 2001-12-21 2008-11-20 Battelle Memorial Institute Structures containing carbon nanotubes and a porous support, methods of making the same, and related uses
US7169489B2 (en) * 2002-03-15 2007-01-30 Fuelsell Technologies, Inc. Hydrogen storage, distribution, and recovery system
US6709497B2 (en) * 2002-05-09 2004-03-23 Texaco Ovonic Hydrogen Systems Llc Honeycomb hydrogen storage structure
JP3821223B2 (ja) * 2002-05-24 2006-09-13 独立行政法人科学技術振興機構 金属酸化物ナノチューブ及びその製法
US6991773B2 (en) * 2002-08-19 2006-01-31 Nanomix, Inc. Boron-oxide and related compounds for hydrogen storage
US6858521B2 (en) * 2002-12-31 2005-02-22 Samsung Electronics Co., Ltd. Method for fabricating spaced-apart nanostructures
WO2004050547A2 (en) * 2002-09-12 2004-06-17 The Trustees Of Boston College Metal oxide nanostructures with hierarchical morphology
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US20040265212A1 (en) * 2002-12-06 2004-12-30 Vijay Varadan Synthesis of coiled carbon nanotubes by microwave chemical vapor deposition
US7112237B2 (en) * 2002-12-12 2006-09-26 Entegris, Inc. Porous sintered composite materials
US7323043B2 (en) * 2003-07-28 2008-01-29 Deere & Company Storage container associated with a thermal energy management system
US8541054B2 (en) * 2003-09-08 2013-09-24 Honda Motor Co., Ltd Methods for preparation of one-dimensional carbon nanostructures
JP2007504086A (ja) * 2003-09-03 2007-03-01 本田技研工業株式会社 一次元炭素ナノ構造体の製造方法
JP4167607B2 (ja) * 2004-02-27 2008-10-15 株式会社豊田自動織機 水素貯蔵タンク
US7425232B2 (en) * 2004-04-05 2008-09-16 Naturalnano Research, Inc. Hydrogen storage apparatus comprised of halloysite
FR2885898B1 (fr) * 2005-05-17 2007-07-06 Commissariat Energie Atomique Composant microfluidique comprenant au moins un canal rempli de nanotubes et procede de fabrication d'un tel composant microfluidique.
US7771512B2 (en) * 2005-06-24 2010-08-10 Washington State University Research Foundation Apparatus with high surface area nanostructures for hydrogen storage, and methods of storing hydrogen
EP1917101A4 (en) * 2005-06-24 2012-02-08 Univ Washington State Res Fdn METHOD FOR PRODUCING AND COATING NANOSTRUCTURED COMPONENTS
CN101970104B (zh) * 2007-11-09 2013-11-06 华盛顿州立大学研究基金会 催化剂和相关方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1426756A1 (en) * 2002-12-03 2004-06-09 Hewlett-Packard Development Company, L.P. Free-standing nanowire sensor and method for detecting an analyte in a fluid

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
D N McIlroy et. al..Nanospring formation—unexpected catalyst mediated growth.《Journal of Physics: Condensed Matter》.2004,第16卷(第12期),R415-R440，尤其是R422页2.1.3部分，R423页2.2部分，R428页第4部分.
Direct Ultrasensitive Electrical Detection of DNA and DNA Sequence Variations Using Nanowire Nanosensors;J. Hahm et. al.;《Nano Letters》;20031209;第4卷(第1期);51-54页，尤其是第52页左栏第2段、图2 *
J. Hahm et. al..Direct Ultrasensitive Electrical Detection of DNA and DNA Sequence Variations Using Nanowire Nanosensors.《Nano Letters》.2003,第4卷(第1期),51-54页，尤其是第52页左栏第2段、图2.
Nanospring formation—unexpected catalyst mediated growth;D N McIlroy et. al.;《Journal of Physics: Condensed Matter》;20040312;第16卷(第12期);R415-R440页，尤其是R422页2.1.3部分，R423页2.2部分，R428页第4部分 *
掺杂硅纳米线的研究进展;裴立宅等;《功能材料与器件学报》;20041231;第10卷(第04期);399-406页 *
硅纳米线制成的纳米传感器;陈扬文等;《传感器技术》;20041231;第23卷(第12期);1-3，9页 *
裴立宅等.掺杂硅纳米线的研究进展.《功能材料与器件学报》.2004,第10卷(第04期),399-406页.
陈扬文等.硅纳米线制成的纳米传感器.《传感器技术》.2004,第23卷(第12期),1-3，9页.

Also Published As

Publication number Publication date
JP2009501068A (ja) 2009-01-15
JP5456309B2 (ja) 2014-03-26
EP1917101A2 (en) 2008-05-07
EP1917101A4 (en) 2012-02-08
WO2007002369A2 (en) 2007-01-04
CN102353696A (zh) 2012-02-15
KR101015036B1 (ko) 2011-02-16
US20140093656A1 (en) 2014-04-03
CA2613004C (en) 2012-03-06
CA2613004A1 (en) 2007-01-04
KR20080035581A (ko) 2008-04-23
CN101232941B (zh) 2011-08-31
IL188363A0 (en) 2008-04-13
WO2007002369B1 (en) 2007-07-26
SG174018A1 (en) 2011-09-29
WO2007002369A3 (en) 2007-05-24
US20100215915A1 (en) 2010-08-26
CN101232941A (zh) 2008-07-30

Similar Documents

Publication Publication Date Title
CN101232941B (zh) 用于纳米结构的组分的制备和涂覆的方法
US8404212B2 (en) Apparatus with high surface area nanostructures for hydrogen storage, and methods of storing hydrogen
CN101970104B (zh) 催化剂和相关方法
US20040129570A1 (en) Method of forming a nano-supported catalyst on a substrate for nanotube growth
JP5027167B2 (ja) カーボンナノチューブ構造体及びその製造方法
EP2077251A1 (en) Method for production of carbon nanotube
KR20120126087A (ko) 카본 나노튜브 배향 집합체의 제조 방법
JP2010518644A (ja) 原子層堆積法によりサイズ制御され空間的に分散されるナノ構造の製造方法
KR20160057393A (ko) 탄소 나노구조체의 제조 방법 및 카본 나노튜브
WO2006133949A2 (en) Formation of metal-containing nanoparticles for use as catalysts in carbon nanotube synthysis
Flaherty et al. Growth and characterization of high surface area titanium carbide
WO2003082738A1 (en) Method for preparing monolayer carbon nanotube
US7635503B2 (en) Composite metal films and carbon nanotube fabrication
US20060067872A1 (en) Method of preparing catalyst base for manufacturing carbon nanotubes and method of manufacturing carbon nanotubes employing the same
JP2012526720A (ja) 調整可能な新種のガス貯蔵材料及びガス感知材料
CN101027742B (zh) 碳纳米管装置及其制造方法
Kämpken et al. Directed deposition of silicon nanowires using neopentasilane as precursor and gold as catalyst
Kordás et al. Room temperature chemical deposition of palladium nanoparticles in anodic aluminium oxide templates
JP4983042B2 (ja) カーボンナノ構造体の製造方法、および触媒反応容器
WO2005009900A2 (fr) Procede de fabrication de nanocomposes de carbone graphitique et en particulier de nanoperles, en vrac ou de façon individualisee
KR101030434B1 (ko) 탄소용융환원반응을 이용한 나노 홀 형성 방법
JP2005336043A (ja) カーボンナノチューブおよびカーボンファイバーの製造方法
TW200936498A (en) Improvements in carbon nanotube growth
JP2007203180A (ja) カーボンナノ構造体の製造方法、触媒金属粒子複合材料およびその製造方法
Lalonde Growth and characterization of metal nanoparticles on nanowire substrates

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140423

Termination date: 20160623